Fairchild HGTG12N60A4D 600v, smps series n-channel igbt with anti-parallel hyperfast diode Datasheet

HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 oC and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
Formerly Developmental Type TA49337.
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG12N60A4D
TO-247
12N60A4D
HGTP12N60A4D
TO-220AB
12N60A4D
HGT1S12N60A4DS
TO-263AB
12N60A4D
E
G
C
JEDEC TO-263AB
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
COLLECTOR
(FLANGE)
G
Symbol
E
C
JEDEC STYLE TO-247
E
G
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
UNITS
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
54
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
23
A
96
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
167
W
1.33
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified
PARAMETER
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
2.0
2.7
V
-
1.6
2.0
V
IC = 250µA, VCE = 600V
-
5.6
-
V
VGE = ±20V
-
-
±250
nA
60
-
-
A
IC = 250µA, VGE = 0V
VCE = 600V
IC = 12A,
VGE = 15V
TJ = 25oC
TJ = 125oC
TJ = 25oC
TJ = 125oC
SSOA
TJ = 150oC, RG = 10Ω, VGE = 15V,
L = 100µH, VCE = 600V
VGEP
IC = 12A, VCE = 300V
-
8
-
V
On-State Gate Charge
Qg(ON)
IC = 12A,
VCE = 300V
VGE = 15V
-
78
96
nC
VGE = 20V
-
97
120
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC,
ICE = 12A,
VCE = 390V,
VGE = 15V,
RG = 10Ω,
L = 500µH,
Test Circuit (Figure 24)
-
17
-
ns
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
trI
td(OFF)I
tfI
-
8
-
ns
-
96
-
ns
-
18
-
ns
-
55
-
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
160
-
µJ
Turn-Off Energy (Note 2)
EOFF
-
50
-
µJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
td(ON)I
trI
td(OFF)I
tfI
IGBT and Diode at TJ = 125oC,
ICE = 12A,
VCE = 390V, VGE = 15V,
RG = 10Ω,
-
17
-
ns
-
16
-
ns
-
110
170
ns
L = 500µH,
Test Circuit (Figure 24)
-
70
95
ns
Turn-On Energy (Note3)
EON1
-
55
-
µJ
Turn-On Energy (Note 3)
EON2
-
250
350
µJ
Turn-Off Energy (Note 2)
EOFF
-
175
285
µJ
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications
TJ = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IEC = 12A
-
2.2
-
V
IEC = 12A, dIEC/dt = 200A/µs
-
30
-
ns
IEC = 1A, dIEC/dt = 200A/µs
-
18
-
ns
IGBT
-
-
0.75
oC/W
Diode
-
-
2.0
oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E ON1 is the turn-on loss of the IGBT only. E ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 24.
Unless Otherwise Specified
VGE = 15V,
50
40
30
20
10
0
25
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 200µH
60
50
40
30
20
10
0
0
TC , CASE TEMPERATURE (oC)
75oC
VGE
15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
1
3
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
30
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
TC
TJ = 125oC, RG = 10Ω, L = 500µH, V CE = 390V
10
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
100
200
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
300
100
20
300
VCE = 390V, RG = 10Ω, TJ = 125oC
18
275
250
16
14
225
ISC
12
200
10
175
8
150
6
125
tSC
4
100
2
75
0
9
10
11
12
13
14
15
50
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Unless Otherwise Specified (Continued)
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
4
0
TJ = 25oC
0
0.5
1.5
1.0
2
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
24
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
TJ = 25oC
4
0
0
0.5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
600
TJ = 125oC, VGE = 12V, VGE = 15V
400
300
200
0
TJ = 25oC, VGE = 12V, VGE = 15V
4
6
8
10
12
14
RG = 10Ω, L = 500µH, VCE = 390V
300
16
18
20
22
TJ = 125oC, VGE = 12V OR 15V
250
200
150
100
50
24
TJ = 25oC, VGE = 12V OR 15V
2
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
32
RG = 10Ω, L = 500µH, VCE = 390V
17
RG = 10Ω, L = 500µH, VCE = 390V
28
16
TJ = 25oC, TJ = 125oC, VGE = 12V
15
14
13
12
TJ = 25oC, TJ = 125oC, VGE = 15V
11
trI , RISE TIME (ns)
td(ON)I, TURN-ON DELAY TIME (ns)
2.5
350
0
2
2
400
RG = 10Ω, L = 500µH, VCE = 390V
100
1.5
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
500
1.0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
24
TJ = 125oC OR TJ = 25oC, VGE = 12V
20
16
12
8
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
10
2
4
6
8
10
12
14
16
18
20
22
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
24
0
2
4
6
8
10
12
14
16
18
20
22
24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
Unless Otherwise Specified (Continued)
90
RG = 10Ω, L = 500µH, VCE = 390V
RG = 10Ω, L = 500µH, VCE = 390V
80
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
115
105
100
95
VGE = 12V, VGE = 15V, TJ = 25oC
TJ = 125oC, VGE = 12V OR 15V
60
50
40
30
90
85
70
TJ = 25oC, VGE = 12V OR 15V
20
10
2
4
6
8
10
12
14
16
18
20
22
24
2
4
6
ICE , COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
TJ = 25oC
TJ = -55oC
150
TJ = 125oC
100
50
0
6
7
8
9
10
11
12
13
14
15
16
12
VCE = 600V
0.4
ICE = 12A
0.2
ICE = 6A
0
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
©2001 Fairchild Semiconductor Corporation
125
24
8
VCE = 200V
6
4
2
0
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING
ENERGY LOSS (mJ)
0.6
100
22
VCE = 400V
10
0
10
10
ICE = 24A
75
20
20
30
50
40
60
70
80
FIGURE 14. GATE CHARGE WAVEFORMS
0.8
50
18
QG , GATE CHARGE (nC)
RG = 10Ω, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
25
16
IG(REF) = 1mA, RL = 25Ω, TC = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
1.0
14
14
VGE , GATE TO EMITTER VOLTAGE (V)
1.2
12
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
200
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
8
150
TJ = 125oC, L = 500µH,
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 24A
1
ICE = 12A
ICE = 6A
0.1
5
10
100
1000
RG , GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Unless Otherwise Specified (Continued)
3.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
2.5
2.0
CIES
1.5
1.0
COES
0.5
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
2.4
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs, TJ = 25oC
2.3
2.2
ICE = 18A
2.1
ICE = 12A
2.0
ICE = 6A
1.9
8
9
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
15
16
90
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
12
dIEC/dt = 200A/µs
80
125oC
25oC
trr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
14
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
14
10
8
6
4
2
125oC trr
70
125oC tb
60
50
40
125oC ta
30
25oC trr
20
25oC ta
10
0.5
0
1.0
1.5
0
2.5
2.0
25oC tb
1
2
3
4
VEC , FORWARD VOLTAGE (V)
Qrr , REVERSE RECOVERY CHARGE (nc)
55
IEC = 12A, VCE = 390V
125oC tb
50
45
40
35
125oC ta
30
25
20
25oC ta
15
25oC tb
10
5
200
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
©2001 Fairchild Semiconductor Corporation
6
7
8
9
10
11
12
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
65
60
5
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
trr , RECOVERY TIMES (ns)
13
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
0
12
11
400
VCE = 390V
350
125oC IEC = 12A
300
125oC IEC = 6A
250
200
25oC IEC = 12A
150
100
25oC IEC = 6A
50
0
200
300
400
500
600
700
800
900
1000
diEC/dt, RATE OF CHANGE OF CURRENT (A/µs)
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.50
0.20
10-1
t1
0.10
PD
0.05
t2
0.02
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTP12N60A4D
DIODE TA49371
90%
10%
VGE
EON2
EOFF
L = 500µH
VCE
RG = 10Ω
90%
DUT
+
-
ICE
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 25.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 25. E ON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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