Intersil HGTP10N40E1 10a, 12a, 400v and 500v n-channel igbt Datasheet

HGTP10N40C1, 40E1, 50C1, 50E1,
HGTH12N40C1, 40E1, 50C1, 50E1
10A, 12A,
400V and 500V N-Channel IGBTs
April 1995
Features
Packages
HGTH-TYPES JEDEC TO-218AC
• 10A and 12A, 400V and 500V
EMITTER
• VCE(ON): 2.5V Max.
COLLECTOR
• TFI: 1µs, 0.5µs
GATE
COLLECTOR
(FLANGE)
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode
Applications
HGTP-TYPES JEDEC TO-220AB
• Power Supplies
• Motor Drives
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
• Protection Circuits
Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1,
HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1
are n-channel enhancement-mode insulated gate bipolar transistors
(IGBTs) designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH12N40C1
TO-218AC
G12N40C1
HGTH12N40E1
TO-218AC
G12N40E1
HGTH12N50C1
TO-218AC
G12N50C1
HGTH12N50E1
TO-218AC
G12N50E1
HGTP10N40C1
TO-220AB
G10N40C1
HGTP10N40E1
TO-220AB
G10N40E1
HGTP10N50C1
TO-220AB
G10N50C1
HGTP10N50E1
TO-220AB
G10N50E1
G
E
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
HGTH12N40C1
HGTH12N40E1
HGTH12N50C1
HGTH12N50E1
HGTP10N40C1
HGTP10N40E1
Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . .VCES
400
500
400
500
V
Collector-Gate Voltage RGE = 1MΩ. . . . . . . . . . . . . . . . VCGR
Reverse Collector-Emitter Voltage . . . . . . . . . . . . VECS(rev.)
400
500
400
500
V
15
15
-5
-5
V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . IC
±20
±20
±20
±20
V
12
12
10
10
A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
17.5
17.5
17.5
17.5
A
Power Dissipation at TC =
+25oC
HGTP10N50C1
HGTP10N50E1 UNITS
. . . . . . . . . . . . . . . . . . . PD
75
75
60
60
W
Power Dissipation Derating Above TC > +25oC . . . . . . . . . . .
0.6
0.6
0.48
0.48
W/oC
Operating and Storage Junction Temperature Range . . . TJ, TSTG
-55 to +150
-55 to +150
-55 to +150
-55 to +150
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-15
File Number
1697.3
Specifications HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
HGTH12N40C1, E1,
HGTP10N40C1, E1
PARAMETERS
SYMBOL
TEST CONDITIONS
HGTH12N50C1, E1,
HGTP10N50C1, E1
MIN
MAX
MIN
MAX
UNITS
Collector-Emitter Breakdown
Voltage
BVCES
IC = 1mA, VGE = 0
400
-
500
-
V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2.0
4.5
3 (Typ)
2.0
4.5
3 (Typ)
V
VCE = 400V, TC = +25oC
-
250
-
-
µA
VCE = 500V, TC = +25oC
-
-
-
250
µA
VCE = 400V, TC = +125oC
-
1000
-
-
µA
+125oC
-
-
-
1000
µA
Zero Gate Voltage Collector
Current
ICES
VCE = 500V, TC =
IGES
VGE = ±20V, VCE = 0
-
100
-
100
nA
VCE(ON)
IC = 10A, VGE = 10V
-
2.5
-
2.5
V
IC = 17.5A, VGE = 20V
-
3.2
-
3.2
V
VGEP
IC = 5A, VCE = 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 5A, VCE = 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
tD(ON)I
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
-
50
-
50
ns
-
50
-
50
ns
-
400
-
400
ns
40E1, 50E1
680 (Typ)
1000
680 (Typ)
1000
ns
40C1, 50C1
400
500
400
500
ns
Gate-Emitter Leakage Current
Collector-Emitter on Voltage
Gate-Emitter Plateau Voltage
Rise Time
tRI
Turn-Off Delay Time
tD(OFF)I
Fall Time
tFI
Turn-Off Energy Loss per Cycle
(Off Switching Dissipation =
WOFF x Frequency)
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
40E1, 50E1
680 (Typ)
µJ
40C1, 50C1
400 (Typ)
µJ
Thermal Resistance
Junction-to-Case
RθJC
HGTH, HGTM
-
1.67
-
1.67
oC/W
HGTP
-
2.083
-
2.083
oC/W
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
3-16
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves
20.0
VGE = 10V, RGEN = RGE = 100Ω
RATED POWER DISSIPATION (%)
ICE, COLLECTOR CURRENT (A)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
-75
-50
-25
0
+25
100
80
60
40
20
+50 +75 +100 +125 +150 +175
0
+25
TD , JUNCTION TEMPERATURE (oC)
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
+50
+100
+100
+125
+150
ZθJC(t) = r(t)RθJC,
D CURVES APPLY FOR POWER PULSE,
TRAIN SHOWN READ TIME AT t1,
TJ(PEAK) - TC = P(PEAK)ZθJC(t)
10
1.0
0.1
D = 0.05
SINGLE PULSE
0.01
0.01
+150
D = 0.2
D = 0.5
0.1
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE
1.0
10
t, TIME (ms)
100
1000
FIGURE 4. NORMALIZED THERMAL RESPONSE CHARACTERISTICS
TC = +25oC
17.5
17.5
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
15.0 DUTY CYCLE = 0.5% MAX.
VGE = 20V
ICE, COLLECTOR CURRENT (A)
ICE, ON-STATE COLLECTOR CURRENT (A)
+75
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE
r(t), EFFECTIVE TRANSIENT THERMAL
IMPEDANCE (NORMALIZED)
NORMALIZED GATE THRESHOLD VOLTAGE
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
-50
+50
TC , CASE TEMPERATURE (oC)
12.5
10.0
7.5
5.0
+25oC
-40oC
2.5
15.0
VGE = 8V
10.0
7.5
VGE = 5V
5.0
2.5
2.5
5.0
7.5
10.0
VGE = 4V
0
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL TRANSFER CHARACTERISTICS
VGE = 6V
12.5
+125oC
0
VGE = 7V
VGE = 10V
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 6. TYPICAL SATURATION CHARACTERISTICS
3-17
5
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves (Continued)
1200
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
15.0
12.5
10.0
o
+25 C
7.5
f = 1MHz
1000
C, CAPACITANCE (pF)
ICE, COLLECTOR CURRENT (A)
17.5
5.0
800
CISS
600
400
200
2.5
COSS
CRSS
0
0
1
2
3
0
4
10
20
30
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 8. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
3.00
IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
2.75
tD(OFF)I , SWITCHING TIME (ns)
VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V)
FIGURE 7. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
50
IC = 10A, VGE = 10V
2.50
IC = 10A, VGE = 15V
2.25
2.00
IC = 5A, VGE = 10V
1.75
IC = 5A, VGE = 15V
1.50
+25
+50
+75
+100
+125
300
200
100
0
+25
+150
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL VCE(ON) vs TEMPERATURE
+150
FIGURE 10. TYPICAL TURN-OFF DELAY TIME
800
EOFF = ∫ IC * VCEdt
IC = 5A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
700
IC
tFI , SWITCHING TIME (ns)
VGE
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE (oC)
VCE
600
40E1/50E1
500
400
40C1/50C1
300
200
100
0
+25
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 12. TYPICAL FALL TIME (IC = 5A)
3-18
+150
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
Typical Performance Curves (Continued)
1000
800
600
40E1/50E1
400
40C1/50C1
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE
10A, 40E1/50E1
800
700
600
10A, 40C1/50C1
500
400
5A, 40E1/50E1
300
200
5A, 40C1/50C1
100
0
+25
+150
+50
+75
+100
FIGURE 14. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
10
500
RL = 50Ω
IG(REF) = 0.38mA
BVCES
VCC = BVCES
375
VGE = 10V
8
GATEEMITTER
VOLTAGE
6
VCC = 0.25 BVCES
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
125
4
2
COLLECTOR-EMITTER VOLTAGE
0
0
20
IG(REF)
IG(ACT)
TIME (µs)
80
IG(REF)
IG(ACT)
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS
AT CONSTANT GATE CURRENT
Test Circuit
RL = 13Ω
L = 50µH
VCC
1/RG = 1/RGEN + 1/RGE
RGEN = 100Ω
VCE(CLP) =
300V
20V
0V
+125
TJ , JUNCTION TEMPERATURE (oC)
(oC)
FIGURE 13. TYPICAL FALL TIME (IC = 10A)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
VGE, GATE-EMITTER VOLTAGE (V)
500
900
WOFF , TURN-OFF ENERGY LOSS (µJ)
tFI , SWITCHING TIME (ns)
700
IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
RGE = 100Ω
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
3-19
130V
+150
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
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3-21
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