Intersil HGTP10N50E1D 10a, 400v and 500v n-channel igbts with anti-parallel ultrafast diode Datasheet

HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
April 1995
Features
Package
• 10A, 400V and 500V
JEDEC TO-220AB
• VCE(ON): 2.5V Max.
EMITTER
COLLECTOR
GATE
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
COLLECTOR
(FLANGE)
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
Terminal Diagram
• Motor Drives
N-CHANNEL ENHANCEMENT MODE
• Protective Circuits
C
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power integrated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTP10N40C1D
HGTP10N40E1D
400
400
±20
17.5
10
75
0.6
-55 to +150
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
HGTP10N50C1D
HGTP10N50E1D
500
500
±20
17.5
10
75
0.6
-55 to +150
File Number
UNITS
V
V
V
A
W
W/oC
oC
2405.5
Specifications HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
HGTP10N40C1D,
HGTP10N40E1D
PARAMETERS
SYMBOL
TEST CONDITIONS
HGTP10N50C1D,
HGTP10N50E1D
MIN
MAX
MIN
MAX
UNITS
Collector-Emitter Breakdown Voltage
BVCES
IC = 1mA, VGE = 0
400
-
500
-
V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2.0
4.5
2.0
4.5
V
VCE = 400V, TC = +25oC
-
250
-
-
µA
VCE = 500V, TC = +25oC
-
-
-
250
µA
VCE = 400V, TC = +125oC
-
1000
-
-
µA
VCE = 500V, TC = +125oC
-
-
-
1000
µA
IGES
VGE = ±20V, VCE = 0
-
100
-
100
nA
VCE(ON)
IC = 10A, VGE = 10V
-
2.5
-
2.5
V
IC = 17.5A, VGE = 20V
-
3.2
-
3.2
V
VGEP
IC = 5A, VCE = 10V
-
6 (Typ)
-
6 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 5A, VCE = 10V
-
19 (Typ)
-
19 (Typ)
nC
Turn-On Delay Time
tD(ON)I
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
-
50
-
50
ns
-
50
-
50
ns
-
400
-
400
ns
40E1D, 50E1D
680 (Typ)
1000
680 (Typ)
1000
ns
40C1D, 50C1D
400 (Typ)
500
400 (Typ)
500
ns
Zero Gate Voltage Collector Current
Gate-Emitter Leakage Current
Collector-Emitter On Voltage
Gate-Emitter Plateau Voltage
Rise Time
ICES
tRI
Turn-Off Delay Time
tD(OFF)I
Fall Time
tFI
Turn-Off Energy Loss per Cycle (Off
Switching Dissipation =
WOFF x Frequency)
WOFF
IC = 10A, VCE(CLP) = 300V,
L = 50µH, TJ = +100oC,
VGE = 10V, RG = 50Ω
40E1D, 50E1D
1810 (Typ)
µJ
40C1D, 50C1D
1070 (Typ)
µJ
Thermal Resistance Junction-to-Case
RθJC
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
tRR
-
1.67
-
1.67
oC/W
IEC = 10A
-
2
-
2
V
IEC = 10A, di/dt = 100A/µs
-
100
-
100
ns
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
3-21
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves
20.0
VGE = 10V, RGEN = RGS = 100Ω
RATED POWER DISSIPATION (%)
ICE, COLLECTOR CURRENT (A)
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0
-75
-50
-25
0
+25
100
80
60
40
20
+50 +75 +100 +125 +150 +175
0
+25
+50
TJ , JUNCTION TEMPERATURE (oC)
+100
+125
+150
FIGURE 2. POWER DISSIPATION vs TEMPERATURE DERATING CURVE
35
PULSE TEST, VCE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGE = VCE, IC = 1mA
1.3
ICE, COLLECTOR CURRENT (A)
NORMALIZED GATE THRESHOLD VOLTAGE
FIGURE 1. MAX. SWITCHING CURRENT LEVEL. RG = 50Ω,
VGE = 0V ARE THE MIN. ALLOWABLE VALUES
1.2
1.1
1.0
0.9
0.8
0.7
30
25
20
15
10
-40oC
+25oC
5
+125oC
-50
0
+50
+100
TJ , JUNCTION TEMPERATURE
0
+150
0
ICE, COLLECTOR CURRENT (A)
VGE = 6V
25
20
15
VGE = 5V
10
5
10.0
35
PULSE TEST, VGE = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGE = 7V
VGE = 10V
VGE = 8V
7.5
FIGURE 4. TYPICAL TRANSFER CHARACTERISTICS
TC = +25oC
30
5.0
VGE, GATE-TO-EMITTER VOLTAGE (V)
35
VGE = 20V
2.5
(oC)
FIGURE 3. TYPICAL NORMALIZED GATE THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
ICE, COLLECTOR CURRENT (A)
+75
TC , CASE TEMPERATURE (oC)
VGE = 4V
30
25
20
+25oC
15
10
5
0
0
0
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
0
5
1
2
3
4
VCE(ON), COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
3-22
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
VCE(ON), COLLECTOR-EMITTER ON VOLTAGE (V)
Typical Performance Curves (Continued)
1200
f = 0.1MHz
C, CAPACITANCE (pF)
1000
800
CISS
600
400
200
COSS
CRSS
0
0
10
20
30
40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
3.00
2.75
IC = 10A, VGE = 10V
2.50
IC = 10A, VGE = 15V
2.25
2.00
IC = 5A, VGE = 10V
1.75
IC = 5A, VGE = 15V
1.50
+25
+50
+75
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
TD(OFF)I, TURN OFF DELAY TIME (ns)
+125
+150
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
400
WOFF = ∫ IC * VCEdt
IC = 20A, VGE = 10V, VCL = 300V
L =25µH, RG = 25Ω
VGE
IC
300
VCE
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
+150
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
800
IC = 5A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
700
700
600
IC = 10A, VGE = 10V, VCL = 300V
L = 50µH, RG = 50Ω
600
40E1/50E1
tFI , FALL TIME (ns)
tFI , FALL TIME (ns)
+100
TJ, JUNCTION TEMPERATURE (oC)
500
400
40C1/50C1
300
400
40C1/50C1
300
200
200
100
100
0
+25
+50
+75
+100
+125
40E1/50E1
500
0
+25
+150
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 5A)
FIGURE 12. TYPICAL FALL TIME (IC = 10A)
3-23
+150
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves (Continued)
L = 25µH, RG = 25Ω
VCE, COLLECTOR-EMITTER VOLTAGE (V)
WOFF , TURN-OFF ENERGY LOSS (µJ)
900
20A, 40E1/50E1
800
700
600
20A, 40C1/50C1
500
400
10A, 40E1/50E1
300
200
10A, 40C1/50C1
100
0
+25
10
500
VGE = 10V, VCE(CLP) = 300V
RL = 25Ω
IG(REF) = 0.76mA
VGE = 10V
VCC = BVCES
GATEEMITTER
VOLTAGE
375
6
VCC = 0.25BVCES
250
NOTE:
FOR TURN-OFF GATE CURRENTS IN
EXCESS OF 3mA. VCE TURN-OFF IS
NOT ACCURATELY REPRESENTED
BY THIS NORMALIZATION.
125
+75
+100
+125
2
0
+150
20
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
4
COLLECTOR-EMITTER VOLTAGE
0
+50
8
VGE, GATE-EMITTER VOLTAGE (V)
1000
IG(REF)
TIME (µs)
IG(ACT)
80
IG(REF)
IG(ACT)
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260)
TYPICAL REVERSE RECOVERY TIME
TYPICAL DIODE ON VOLTAGE
10
tRR, REVERSE RECOVERY TIME (ns)
IEC , EMITTER-COLLECTOR CURRENT (A)
100
TJ = +150oC
TJ = +100oC
TJ = +25oC
1
TJ = -50oC
60
50
40
dIEC/dT ≥ 100A/µs
30
VR = 30V, TJ = +25oC
20
10
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
2
VEC, EMITTER-COLLECTOR (V)
FIGURE 15. TYPICAL DIODE EMITTER-TO-COLLECTOR
VOLTAGE vs CURRENT FOR ALL TYPES
4
6
8 10
12
14
16
18
IEC , EMITTER-COLLECTOR CURRENT (A)
FIGURE 16. TYPICAL DIODE REVERSE-RECOVERY TIME FOR
ALL TYPES
Test Circuit
RL = 13Ω
L = 50µH
VCC
1/RG = 1/RGEN + 1/RGE
VCE(CLP)=
300V
RGEN = 100Ω
20V
0V
20
RGE = 100Ω
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-24
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
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3-25
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