Intersil HGTP15N120C3 35a, 1200v, ufs series n-channel igbt Datasheet

HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3, HGT1S15N120C3S
35A, 1200V, UFS Series N-Channel IGBTs
June 1997
Features
Description
• 35A, 1200V, TC = 25oC
The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3
and HGT1S15N120C3S are MOS gated high voltage switching
devices combining the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids, relays and contactors.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG15N120C3
TO-247
15N120C3
HGTP15N120C3
TO-220AB
15N120C3
HGT1S15N120C3
TO-262AA
15N120C3
HGT1S15N120C3S
TO-263AB
15N120C3
Symbol
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263 variant in tape and reel; i.e.,
HGT1S15N120C3S9A.
G
E
Formerly Developmental Type TA49145.
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB (ALTERNATE VERSION)
EMITTER
COLLECTOR
GATE
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
JEDEC TO-262AA
JEDEC TO-263AB
EMITTER
COLLECTOR
GATE
M
A
A
COLLECTOR
(FLANGE)
A
GATE
COLLECTOR
(FLANGE)
EMITTER
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
4244.3
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG15N120C3, HGTP15N120C3,
HGT1S15N120C3S, HGT1S15N120C3S
UNITS
1200
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
35
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
15
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
120
A
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . SSOA
15A at 1200V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
164
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
100
mJ
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . tSC
6
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . tSC
25
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 720V, TJ = 125oC, RGE = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
-
-
250
µA
-
-
3.0
mA
-
2.3
3.5
V
Collector to Emitter Leakage Current
ICES
VCE = BVCES
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110,
VGE = 15V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA, VCE = VGE
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
IGES
SSOA
VGEP
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
-
2.4
3.2
V
4.0
5.6
7.5
V
-
-
±100
nA
VCE(PK) = 960V
40
-
-
A
VCE(PK) = 1200V
15
-
-
A
VGE = ±20V
TJ = 150oC, RG = 10Ω
VGE = 15V, L = 1mH
IC = IC110, VCE = 0.5 BVCES
-
8.8
-
V
Qg(ON)
IC = IC110,
VCE = 0.5 BVES
VGE = 15V
-
75
100
nC
VGE = 20V
-
100
130
nC
td(ON)I
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 10Ω
trI
td(OFF)I
-
17
-
ns
-
25
-
ns
-
470
550
ns
Current Fall Time
t fI
-
350
400
ns
Turn-On Energy
EON
-
2100
-
µJ
Turn-Off Energy (Note 3)
EOFF
-
4700
-
µJ
Thermal Resistance
RθJC
-
-
0.76
oC/W
L = 1mH
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
2
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
80
TC = -55oC
60
TC = 150oC
40
TC = 25oC
20
0
8
6
12
10
14
80
DUTY CYCLE <0.5%, TC = 25oC
PULSE DURATION = 250µs
60
40
20
0
0
VGE , GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = 25oC
15
TC = 150oC
5
0
0
2
4
8
6
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
ICE , DC COLLECTOR CURRENT (A)
25
20
15
10
5
125
80
TC = 25oC
60
TC = 150oC
40
20
0
2
4
6
8
10
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
30
100
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE = 15V
75
8
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
0
35
50
6
100
10
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
25
4
FIGURE 2. SATURATION CHARACTERISTICS
25
10
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
20
VGE = 15V
12V
10V
9V
8.5V
8V
150
TC , CASE TEMPERATURE (oC)
FIGURE 5. DC COLLECTOR CURRENT AS A FUNCTION OF
CASE TEMPERATURE
35
150
VCE = 720V, RGE = 25Ω, TJ = 125oC
125
30
ISC
25
100
20
75
15
10
50
tSC
10
13
11
12
14
VGE , GATE TO EMITTER VOLTAGE (V)
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3
25
ISC, PEAK SHORT CIRCUIT CURRENT(A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Typical Performance Curves
600
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
100
(Continued)
50
VGE = 10V
30
20
VGE = 15V
10
5
10
15
20
400
VGE = 10V or 15V
300
200
100
25
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
500
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
300
500
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
10
10
15
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
30
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
16
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
EOFF , TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
VGE = 15V
200
25
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
8
VGE = 10V
6
4
0
30
300
100
5
25
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
VGE = 10V
VGE = 15V
VGE = 15V
2
20
400
100
10
15
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
VGE = 10V
1
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, RG = 10Ω, L = 1mH, VCE(PK) = 960V
14
12
VGE = 10V
10
VGE = 15V
8
6
4
2
0
5
10
15
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
5
25
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
4
30
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
fMAX , OPERATING FREQUENCY (kHz)
100
(Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
TJ = 150oC, TC = 75oC, RG = 10Ω
L = 1mH, VCE(PK) = 960V
30
20
VGE = 15V
VGE = 10V
10
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.76oC/W
1
5
10
20
ICE, COLLECTOR TO EMITTER CURRENT (A)
50
40
30
20
10
0
25
0
4000
FREQUENCY = 1MHz
3500
C, CAPACITANCE (pF)
CIES
3000
2500
2000
1500
1000
0
COES
CRES
200
400
600
800
1000
1200
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 14. SWITCHING SAFE OPERATING AREA
VGE, GATE TO AEMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR TO EMITTER CURRENT
500
TJ = 150oC, VGE = 15V, RG = 10Ω
14
IG(REF) = 4.21mA, RL = 80Ω, TC = 25oC
12
VCE = 1200V
10
8
VCE = 400V
VCE = 800V
6
4
2
0
0
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0
25
ZθJC , NORMALIZED THERMAL IMPEDANCE
10-1
80
120
160
Qg , GATE CHARGE (nC)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOR
TO EMITTER VOLTAGE
100
40
FIGURE 16. GATE CHARGE WAVEFORMS
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t1
PD
t2
10-2
SINGLE PULSE
10-3
10-5
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
5
101
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
Test Circuit and Waveforms
90%
L = 1mH
10%
VGE
RHRP15120
EON
EOFF
VCE
RG = 10Ω
90%
+
-
VDD = 960V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBT’s
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the
information shown for a typical unit in Figures 4, 7, 8, 11 and
12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX.
td(OFF)I is important when controlling output ripple under a
lightly loaded condition.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26™” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/ (EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX TC) / RθJC. The sum of device switching and conduction
losses must not exceed PD. A 50% duty factor was used
(Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.
EON and EOFF are defined in the switching waveforms
shown in Figure 19. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation for EOFF; i.e.
the collector current equals zero (ICE = 0).
6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
6
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
TERM. 4
ØS
INCHES
ØP
SYMBOL
Q
ØR
D
L1
MILLIMETERS
MIN
MAX
NOTES
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
0.800
0.820
20.32
20.82
-
b1
E
0.605
0.625
15.37
15.87
b2
e
c
e1
b
2
MAX
D
L
1
MIN
3
3
e
J1
0.219 TYP
0.438 BSC
-
5.56 TYP
4
11.12 BSC
4
J1
0.090
0.105
2.29
2.66
1
L
0.620
0.640
15.75
16.25
-
BACK VIEW
L1
0.145
0.155
3.69
3.93
1
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
2
e1
5
LEAD NO. 1
- GATE
ØR
0.195
0.205
4.96
5.20
-
LEAD NO. 2
- COLLECTOR
ØS
0.260
0.270
6.61
6.85
-
LEAD NO. 3
- EMITTER
TERM. 4
MOUNTING
FLANGE
- COLLECTOR
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
7
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
E
ØP
INCHES
A1
SYMBOL
Q
H1
TERM. 4
D
L1
b1
c
2
3
J1
e
e1
LEAD NO. 1
- GATE
LEAD NO. 2
- COLLECTOR
LEAD NO. 3
- EMITTER
TERM. 4
- COLLECTOR
MAX
NOTES
0.170
0.180
4.32
4.57
-
0.048
0.052
1.22
1.32
2, 4
b
0.030
0.034
0.77
0.86
2, 4
b1
0.045
0.055
1.15
1.39
2, 4
c
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
H1
1
MILLIMETERS
MIN
A
e1
60o
MAX
A1
e
b
L
MIN
0.100 TYP
0.200 BSC
0.235
0.255
-
2.54 TYP
5
5.08 BSC
5
5.97
6.47
-
J1
0.095
0.105
2.42
2.66
6
L
0.530
0.550
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
3
ØP
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 2 dated 10-95.
8
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-262AA
3 LEAD JEDEC TO-262AA PLASTIC PACKAGE
E
INCHES
A
15o
SYMBOL
A1
H1
TERM. 4
D
L1
b1
c
1
2
3
e
J1
- GATE
LEAD NO. 2
- COLLECTOR
LEAD NO. 3
- EMITTER
TERM. 4
- COLLECTOR
NOTES
0.170
0.180
4.32
4.57
-
0.052
1.22
1.32
3, 4
b
0.030
0.034
0.77
0.86
3, 4
b1
0.045
0.055
1.15
1.39
3, 4
c
0.018
0.022
0.46
0.55
3, 4
D
0.405
0.425
10.29
10.79
-
E
0.395
0.405
10.04
10.28
0.100 TYP
0.200 BSC
0.045
0.055
-
2.54 TYP
5
5.08 BSC
5
1.15
1.39
-
J1
0.095
0.105
2.42
2.66
6
L
0.530
0.550
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC TO-262AA outline dated 6-90.
2. Solder finish uncontrolled in this area.
3. Dimension (without solder).
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
7. Controlling dimension: Inch.
8. Revision 4 dated 10-95.
e1
LEAD NO. 1
MAX
0.048
H1
60o
MILLIMETERS
MIN
A
e1
L
MAX
A1
e
b
MIN
9
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
E
INCHES
A
A1
SYMBOL
H1
TERM. 4
D
L2
L1
L
1
3
b
b1
e
c
e1
J1
.450
(11.43)
TERM. 4
L3
.350
(8.89)
b2
.700
(17.78)
3
.150
(3.81)
.080(2.03)
.062(1.58)
.062(1.58)
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
LEAD NO. 1
- GATE
LEAD NO. 3
- EMITTER
TERM. 4
- COLLECTOR
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.170
0.180
4.32
4.57
-
A1
0.048
0.052
1.22
1.32
4, 5
b
0.030
0.034
0.77
0.86
4, 5
b1
0.045
0.055
1.15
1.39
4, 5
b2
0.310
-
7.88
-
2
c
0.018
0.022
0.46
0.55
4, 5
D
0.405
0.425
10.29
10.79
-
E
0.395
0.405
10.04
10.28
-
e
0.100 TYP
2.54 TYP
7
e1
0.200 BSC
5.08 BSC
7
H1
0.045
0.055
1.15
1.39
-
J1
0.095
0.105
2.42
2.66
-
L
0.175
0.195
4.45
4.95
-
L1
0.090
0.110
2.29
2.79
4, 6
L2
0.050
0.070
1.27
1.77
3
L3
0.315
-
8.01
-
2
NOTES:
1. These dimensions are within allowable dimensions of Rev. C of
JEDEC TO-263AB outline dated 2-92.
2. L3 and b2 dimensions established a minimum mounting surface
for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L1 is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from bottom
of dimension D.
8. Controlling dimension: Inch.
9. Revision 7 dated 10-95.
1
.080(2.03)
MIN
10
HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S
TO-263AB
24mm TAPE AND REEL
40mm MIN.
ACCESS HOLE
4.0mm
1.5mm
DIA. HOLE
2.0mm
30.4mm
13mm
330mm
1.75mm
C
L
24mm
100mm
16mm
24.4mm
USER DIRECTION OF FEED
COVER TAPE
GENERAL INFORMATION
1. USE "9A" SUFFIX ON PART NUMBER.
2. 800 PIECES PER REEL.
3. ORDER IN MULTIPLES OF FULL REELS ONLY.
4. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
Revision 7 dated 10-95
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
11
ASIA
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Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
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