Intersil HGTP2N120CN 13a, 1200v, npt series n-channel igbt Datasheet

HGTD2N120CNS, HGTP2N120CN,
HGT1S2N120CNS
Data Sheet
January 2000
13A, 1200V, NPT Series N-Channel IGBT
Features
The HGTD2N120CNS, HGTP2N120CN, and
HGT1S2N120CNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor.
• 13A, 1200V, TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Avalanche Rated
Formerly Developmental Type TA49313.
Ordering Information
PART NUMBER
File Number
4680.2
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
PACKAGE
BRAND
HGTP2N120CN
TO-220AB
2N120CN
HGTD2N120CNS
TO-252AA
2N120C
HGT1S2N120CNS
TO-263AB
2N120CN
JEDEC TO-220AB
E
COLLECTOR
(FLANGE)
C
G
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB and TO-252AA variant in Tape and Reel,
e.g., HGT1S2N120CNS9A.
Symbol
C
JEDEC TO-252AA
COLLECTOR
(FLANGE)
G
G
E
E
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTD2N120CNS
HGTP2N120CN,
HGT1S2N120CNS
UNITS
1200
V
13
7
20
±20
±30
13A at 1200V
104
0.83
18
-55 to 150
A
A
A
V
V
W
W/oC
mJ
oC
300
oC
260
8
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. ICE = 3A, L = 4mH.
3. VCE(PK) = 840V, TJ = 125oC, RG = 51Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
TC = 25oC
-
-
100
µA
TC = 125oC
-
100
-
µA
TC = 150oC
-
-
1.0
mA
TC = 25oC
-
2.05
2.40
V
TC = 150oC
-
2.75
3.50
V
6.4
6.7
-
V
-
-
±250
nA
13
-
-
A
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = 2.6A,
VGE = 15V
IC = 45µA, VCE = VGE
Gate to Emitter Leakage Current
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 51Ω, VGE = 15V,
L = 5mH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 2.6A, VCE = 0.5 BVCES
-
10.2
-
V
IC = 2.6A,
VCE = 0.5 BVCES
VGE = 15V
-
30
36
nC
VGE = 20V
-
36
43
nC
On-State Gate Charge
QG(ON)
2
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 25oC
ICE = 2.6A
VCE = 0.8 BVCES
VGE = 15V
RG = 51Ω
L = 5mH
Test Circuit (Figure 18)
MIN
TYP
MAX
UNITS
-
25
30
ns
-
11
15
ns
-
205
220
ns
-
260
320
ns
-
96
-
µJ
Turn-On Energy (Note 4)
EON1
Turn-On Energy (Note 4)
EON2
-
425
590
µJ
Turn-Off Energy (Note 5)
EOFF
-
355
390
µJ
Current Turn-On Delay Time
td(ON)I
-
21
25
ns
-
11
15
ns
-
225
240
ns
-
360
420
ns
-
96
-
µJ
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 150oC,
ICE = 2.6A,
VCE = 0.8 BVCES ,
VGE = 15V,
RG = 51Ω,
L = 5mH,
Test Circuit (Figure 18)
Turn-On Energy (Note 4)
EON1
Turn-On Energy (Note 4)
EON2
-
800
1100
µJ
Turn-Off Energy (Note 5)
EOFF
-
530
580
µJ
Thermal Resistance Junction To Case
RθJC
-
-
1.20
oC/W
NOTES:
4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
5. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
14
VGE = 15V
12
10
8
6
4
2
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
16
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
14
12
10
8
6
4
2
0
0
200
400
600
800
1000
1200
1400
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
TJ = 150oC, RG = 51Ω, VGE = 15V, L = 5mH
TC
TC = 75oC,VGE = 15V
IDEAL DIODE
100
VGE
75oC 15V
75oC 12V
50
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 1.2oC/W, SEE NOTES
10
1
TC
VGE
110oC 15V
o
110 C 12V
2
3
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
VCE = 840V, RG = 51Ω, TJ = 125oC
40
40
30
30
20
20
ISC
TC = -55oC
4
TC = 150oC
2
DUTY CYCLE <0.5%, VGE = 12V
250µS PULSE TEST
0
5
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
6
4
13
14
15
DUTY CYCLE <0.5%, VGE = 15V
250µs PULSE TEST
8
TC = -55oC
TC = 25oC
6
TC = 150oC
4
2
0
0
1
2
3
4
5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
900
EOFF, TURN-OFF ENERGY LOSS (µJ)
2000
EON2 , TURN-ON ENERGY LOSS (µJ)
12
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
RG = 51Ω, L = 5mH, VCE = 960V
1500
11
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC = 25oC
3
0
10
VGE , GATE TO EMITTER VOLTAGE (V)
8
2
10
0
5
10
1
tSC
10
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
0
50
50
ISC , PEAK SHORT CIRCUIT CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
200
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
TJ = 150oC, VGE = 12V, VGE = 15V
1000
500
TJ = 25oC, VGE = 12V, VGE = 15V
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
RG = 51Ω, L = 5mH, VCE = 960V
800
700
TJ = 150oC, VGE = 12V OR 15V
600
500
400
TJ = 25oC, VGE = 12V OR 15V
300
200
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
RG = 51Ω, L = 5mH, VCE = 960V
RG = 51Ω, L = 5mH, VCE = 960V
35
40
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
45
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
1.5
2.0
2.5
3.0
3.5
4.0
4.5
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
TJ = 25oC, TJ = 150oC, VGE = 15V
5
TJ = 25oC, TJ = 150oC, VGE = 15V
15
1.0
30
0
1.0
5.0
1.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4.0
4.5
5.0
RG = 51Ω, L = 5mH, VCE = 960V
VGE = 12V, VGE = 15V, TJ = 150oC
300
250
200
500
TJ = 150oC, VGE = 12V OR 15V
400
300
200
150
TJ = 25oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 25oC
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
100
1.0
5.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
VGE, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE <0.5%, VCE = 20V
250µS PULSE TEST
30
25
20
TC = -55oC
10
TC = 25oC
2.0
2.5
3.0
3.5
4.0
4.5
5.0
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
40
15
1.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
5
3.5
600
350
35
3.0
700
RG = 51Ω, L = 5mH, VCE = 960V
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
2.5
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
ICE , COLLECTOR TO EMITTER CURRENT (A)
2.0
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = 150oC
IG(REF) = 1mA, RL = 260Ω, TC = 25oC
14
VCE = 1200V
12
10
8
VCE = 400V VCE = 800V
6
4
2
0
0
7
8
9
10
11
12
13
14
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
15
0
5
10
15
20
25
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
30
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Unless Otherwise Specified (Continued)
2.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
1.5
CIES
1.0
0.5
COES
CRES
0
0
5
10
15
20
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
5
DUTY CYCLE <0.5%, TC = 110oC
250µs PULSE TEST
4
VGE = 15V
3
VGE = 10V
2
1
0
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
0.5
1.0
1.5
2.0
2.5
3.0
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.5
0.2
0.1
10-1
t1
0.05
PD
0.02
0.01
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRD4120
90%
10%
VGE
EON2
L = 5mH
EOFF
VCE
RG = 51Ω
90%
+
-
VDD = 960V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
6
3.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 19. SWITCHING TEST WAVEFORMS
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device (Figure
3) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows fMAX1 or
fMAX2; whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required, an external Zener is
recommended.
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
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