HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 1/4 HI117 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI117 is designed for use in general purpose amplifier and low-speed switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature .......................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................. +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ................................................................................................... 25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .................................................................................................. -100 V BVCEO Collector to Emitter Voltage............................................................................................... -100 V BVEBO Emitter to Base Voltage ......................................................................................................... -5 V IC Collector Current (Continue) .......................................................................................................... -4 A IC Collector Current (Peak) ................................................................................................................ -6 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -100 -100 1 500 - Typ. - Max. -1 -2 -2 -2.5 -2.8 200 Unit V V mA mA mA V V K pF Test Conditions IC=-1mA IC=-30mA VCB=-100V VCE=-50V VEB=-5V IC=-2A, IB=-8mA IC=-2A, VCE=-4V IC=-1A, VCE=-4V IC=-2A, VCE=-4V VCB=-10V, f=0.1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Darlington Schematic C B R1 R2 E HI117 HSMC Product Specification HI-SINCERITY Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10000 100000 hFE @ VCE=3V Saturation Voltage (mV) 1000 hFE hFE @ VCE=4V 100 10 10000 VCE(sat) @ IC=100IB 1000 VCE(sat) @ IC=250IB 1 1 10 100 1000 100 100 10000 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current On Voltage & Collector Current 10000 10000 VBE(sat) @ IC=250IB On Voltage (mV) Saturation Voltage (mV) 10000 Collector Current-IC (mA) VBE(sat) @ IC=100IB 1000 VBE(on) @ VCE=3V 1000 VBE(on) @ VCE=4V 100 100 100 1000 1 10000 Collector Current-IC (mA) 10 100 1000 10000 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Switching Time & Collector Current 1000 10 Capacitance (pF) Switching Time (us) VCC=30V, IC=250IB1=-250IB2 Tstg 1 Tf 100 Cob Ton 10 0.1 1 10 Collector Current (A) HI117 0.1 1 10 100 Reverse-Biased Voltage (V) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 3/4 Safe Operating Area 10000 PT=1ms Collector Current-IC (mA) PT=100ms 1000 PT=1s 100 10 1 1 10 100 Forward Voltage-VCE (V) HI117 HSMC Product Specification HI-SINCERITY Spec. No. : HE9031 Issued Date : 1998.07.01 Revised Date : 2001.09.14 Page No. : 4/4 MICROELECTRONICS CORP. TO-251 Dimension A B Marking: C H 1 2 7 D Date Code I Ink Mark Control Code G F Style : Pin 1.Base 2.Collector 3.Emitter 3 I K E H 2 1 J 3-Lead TO-251 Plastic Package HSMC Package Code : I *:Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes : 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 • Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 HI117 HSMC Product Specification