Renesas HIT8050-N-TZ-EQ Silicon npn epitaxial Datasheet

HIT8050-N
Silicon NPN Epitaxial
REJ03G1611-0100
Rev.1.00
Nov 28, 2007
Features
• Low frequency power amplifier
• Complementary pair with HIT8550-N
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
PW ≤ 10 ms, Duty cycle ≤ 20%
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
Page 1 of 4
Symbol
VCBO
VCEO
VEBO
IC
IC (peak) Note
PC
Tj
Tstg
Ratings
45
25
6
0.7
1.0
0.625
150
Unit
V
V
V
A
A
W
°C
–55 to +150
°C
HIT8050-N
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(on)
Min.
45
25
6
—
—
45
85
—
—
Typ
—
—
—
—
—
—
—
—
—
Max.
—
—
—
500
500
—
330
0.5
1.0
Unit
V
V
V
nA
nA
—
—
V
V
Test Conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 45 V, IE = 0
VEB = 6 V
VCE = 1 V, IC = 5 mA
VCE = 1 V, IC = 100 mA
IC = 500 mA, IB = 50 mA
VCE = 3 V, IC = 10 mA
Main Characteristics
1200
Collector Current IC (mA)
1000
1000
800
600
400
200
0
50
100
8 mA
7 mA
6 mA
5 mA
800
4 mA
600
P
3 mA
C
=6
25
2 mA
400
mW
1 mA
200
0
0.8
0.4
1.2
1.6
2.0
Ambient Temperature Ta (°C)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Output Capacitance vs.
Collector to Base Voltage
250
25°C
200
-25°C
150
100
50
VCE = 1 V
1
0
150
Ta = 75°C
0
10 mA
9 mA
IB = 0
0
300
DC Current Transfer Ratio hFE
Typical Output Characteristics
10
100
Collector Current IC (mA)
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
Page 2 of 4
1000
Collector Output Capacitance Cob (pF)
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
100
f = 1 MHz
IE = 0
10
1
0.1
1
10
100
Collector to Base Voltage VCB (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Base to Emitter Saturation Voltage
VBE(sat) (V)
HIT8050-N
Typical Transfer Characteristics
100
1.2
VCE = 3 V
Collector Current IC (mA)
Collector to Emitter, Base to Emitter
Saturation Voltage vs. Collector Current
IC = 10 IB
1.0
Ta = 75°C
VBE(sat)
0.8
10
25°C
0.6
-25°C
1
0.4
0.2
0.1
0
0.2
0.4
0.6
0.8
1.0
VCE(sat)
0
1
Base to Emitter Voltage VBE (V)
10
Collector Current IC (mA)
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
400
350
VCE = 1 V
300
250
200
150
100
50
0
1
10
100
Collector Current IC (mA)
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
Page 3 of 4
100
1000
1000
HIT8050-N
Package Dimensions
Package Name
TO-92(1)
JEITA Package Code
SC-43A
Previous Code
TO-92(1) / TO-92(1)V
RENESAS Code
PRSS0003DA-A
4.8 ± 0.3
MASS[Typ.]
0.25g
Unit: mm
2.3 Max
0.7
0.60 Max
0.55 Max
12.7 Min
5.0 ± 0.2
3.8 ± 0.3
0.5 Max
1.27
2.54
Ordering Information
Part Name
HIT8050-N-EQ
HIT8050-N-TZ-EQ
Quantity
2500 pcs.
2500 pcs.
Shipping Container
Bulk, Vinyl Bag
Hold Box, Radial Taping
Note: This product is designed for consumer use and not for automotive.
REJ03G1611-0100 Rev.1.00 Nov 28, 2007
Page 4 of 4
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