Preliminary Datasheet HITJ0203MP –20V, –2.1A , 180mmax. Silicon P Channel MOS FET Power Switching R07DS0475EJ0200 Rev.2.00 May 09, 2013 Features Low on-resistance RDS(on) = 142 m typ (VGS = –4.5 V, ID = –1.1 A) Low drive current High speed switching 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 G 1. Source 2. Gate 3. Drain 2 1 2 S 1 Note: Marking is “WV”. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS Ratings –20 Unit V VGSS ID +8 / –12 –2.1 –6.0 –2.1 0.8 150 –55 to +150 V A A A W C C ID(pulse) Note1 IDR Pch Note2 Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm) R07DS0475EJ0200 Rev.2.00 May 09, 2013 Page 1 of 6 HITJ0203MP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) Min –20 +8 –12 — — — –0.4 Typ — — — — — — — Max — — — +10 –10 –1 –1.4 Unit V V V A A A V Test conditions ID = –10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = –100 A, VDS = 0 VGS = +6 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = –20 V, VGS = 0 VDS = –10 V, ID = –1 mA RDS(on) — 142 180 m ID = –1.1 A, VGS = –4.5 VNote3 RDS(on) — 216 300 m ID = –1.1 A, VGS = –2.5 VNote3 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time |yfs| Ciss Coss Crss td(on) tr td(off) 2.0 — — — — — — 2.8 205 57 39 14 36 29 — — — — — — — S pF pF pF ns ns ns ID = –1.1 A, VDS = –10 VNote3 Fall time Total gate charge Gate to source charge Gate to drain charge Body - drain diode forward voltage tf Qg Qgs Qgd VDF — — — — — 9 2.6 0.4 1.1 –0.85 — — — — –1.1 ns nC nC nC V Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance VDS = –10 V VGS = 0 f = 1 MHz ID = –1.1 A VGS = –4.5 V RL = 9 Rg = 4.7 VDD = –10 V VGS = –4.5 V ID = –2.1A IF = –2.1 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS0475EJ0200 Rev.2.00 May 09, 2013 Page 2 of 6 HITJ0203MP Preliminary Main Characteristics Maximum Channel Power Dissipation Curve Maximum Safe Operation Area –100 Operation in this area is limited by RDS(on) 0.6 0.2 0 1 PW –1 DC s 10 0 m s O ra tio n –0.1 Ta = 25°C 1 Shot Pulse 0 50 100 –0.01 –0.01 150 Ambient Temperature Ta (°C) –100 Typical Transfer Characteristics (1) –2.4 V –2.2 V –3 –2.0 V –2 –1.8 V –1.6 V –1 Pulse Test Tc = 25°C –4 –6 –5 Drain Current ID (A) –2.6 V –3.6 V –2 VDS = –10 V Pulse Test –2.8 V –3.2 V –3.4 V 0 –10 –6 –3.0 V –4 –1 –5 V –6 –5 –0.1 Drain to Source Voltage VDS (V) Typical Output Characteristics –10 V Drain Current ID (A) m pe *When using the glass epoxy board (FR-4: 40 × 40 × 1 mm) 0 = s 0.4 100 μs –10 m Drain Current ID (A) 0.8 10 Channel Dissipation Pch (W) 1 –3 –2 –1 VGS = 0 V –8 –4 0 –10 Tc = 75°C 25°C –25°C 0 –0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) –1 Drain Current ID (A) VDS = –10 V Pulse Test –0.1 –0.01 Tc = 75°C 25°C –0.001 –25°C –0.0001 0 –0.5 –1 –1.5 –2 Gate to Source Voltage VGS (V) R07DS0475EJ0200 Rev.2.00 May 09, 2013 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature –1.5 VDS = –10 V Pulse Test –1 ID = –10 mA –1 mA –0.5 –0.1 mA 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 3 of 6 Preliminary –800 Pulse Test Tc = 25°C –600 –400 –2.1 A –200 –1.1 A –0.5 A –0.2 A –0 –0 –2 –4 –6 –8 Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1000 VGS = –2.5 V –4.5 V 100 –10 V Pulse Test Tc = 25°C 10 –10 –0.1 –1 –10 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature Static Drain to Source on State Resistance vs. Case Temperature 400 220 Pulse Test VGS = –2.5 V Drain to Source on State Resistance RDS(on) (mΩ) Gate to Source Voltage VGS (V) ID = –2.1 A 350 –1.1 A 300 250 –0.5 A 200 –0.2 A 150 –25 25 50 75 100 125 150 200 Pulse Test VGS = –4.5 V ID = –2.1 A –1.1 A 180 160 140 –0.5 A 120 –0.2 A 100 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature Pulse Test VDS = –10 V –25°C 1 25°C 0.1 0.01 –0.01 Tc = 75°C –0.1 –1 Drain Current ID (A) R07DS0475EJ0200 Rev.2.00 May 09, 2013 –10 IDSS (nA) 10 0 Zero Gate Voltage Drain current Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) HITJ0203MP –10000 Pulse Test VGS = 0 V –1000 VDS = –20 V –100 –10 –1 –0.1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Page 4 of 6 HITJ0203MP Preliminary Switching Characteristics 0 VDS VDD = –20 V –10 –5 V –10 V –20 –4 –10 V –5 V –8 VDD = –20 V VGS ID = –2.1 A Tc = 25°C –30 0 1 2 –12 3 4 5 1000 Switching Time t (ns) 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics tf td(off) td(on) 10 1 –1 –10 Gate Charge Qg (nc) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 400 380 Ciss 100 Coss Ciss (pF) Ciss, Coss, Crss (pF) tr –0.1 6 1000 360 340 320 Crss 300 VGS = 0 V f = 1 MHz 10 –0 –10 –15 –10 –8 –6 –4 –2 –20 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature –4 –10V –2 –5V 5, 10 V VGS = 0 V 0 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) R07DS0475EJ0200 Rev.2.00 May 09, 2013 Body-Drain Diode Forward Voltage VSDF (V) Drain to Source Voltage VDS (V) Pulse Test Tc = 25°C 0 VDS = 0 V f = 1 MHz 280 –5 –6 Reverse Drain Current IDR (A) VDD = –10 V VGS = –4.5 V Rg = 4.7 Ω PW = 5 μs 100 Tc = 25°C –0.6 VGS = 0 –0.5 ID = –10 mA –0.4 –0.3 –0.2 25 –1 mA 50 75 100 125 150 Case Temperature Tc (°C) Page 5 of 6 HITJ0203MP Preliminary Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Orderable Part Number Quantity HITJ0203MPTL-HQ 3000 pcs. 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