Renesas HITK0302MP Silicon n channel mos fet power switching Datasheet

Preliminary Datasheet
HITK0302MP
30V, 2.7A, 115mmax.
Silicon N Channel MOS FET
Power Switching
R07DS0483EJ0200
Rev.2.00
May 09, 2013
Features
 Low on-resistance
RDS(on) = 92 m typ (VGS = 10 V, ID = 1.3 A)
 Low drive current
 High speed switching
 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
G
3
1. Source
2. Gate
3. Drain
2
1
2
S
1
Note:
Marking is “GV”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
Ratings
30
Unit
V
VGSS
ID
20
2.7
5
2.7
0.8
150
–55 to +150
V
A
A
A
W
C
C
ID(Pulse) Note1
IDR
Pch Note2
Tch
Tstg
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR-4: 40  40  1 mm)
R07DS0483EJ0200 Rev.2.00
May 09, 2013
Page 1 of 6
HITK0302MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Min
30
20
—
—
1.0
Typ
—
—
—
—
—
Max
—
—
10
1
2.0
Unit
V
V
A
A
V
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
Drain to source on state resistance
RDS(on)
—
92
115
m
ID = 1.3 A, VGS = 10 VNote3
RDS(on)
—
122
171
m
ID = 1.3 A, VGS = 4.5 VNote3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
2.1
—
—
—
—
—
—
—
—
3.5
175
34
15
9.5
37
38
8.2
3.3
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
nC
ID = 1.3 A, VDS = 10 VNote3
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Qgs
Qgd
VDF
—
—
—
0.6
0.5
0.9
—
—
—
nC
nC
V
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 10 , Rg = 4.7 
VDD = 10 V, VGS = 10 V,
ID = 2.7A
IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
R07DS0483EJ0200 Rev.2.00
May 09, 2013
Page 2 of 6
HITK0302MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
100
0.8
0.4
10
10
0
PW
1
DC
=
μs
s
0.6
Operation in this area
is limited by RDS(on)
m
Drain Current ID (A)
1.0
1
Channel Dissipation Pch (W)
1.2
10
m
s
O
pe
ra
tio
n
0.1
0.2
Tc = 25°C
0
0
25
50
75
100
125
0.01
0.01
150
Ambient Temperature Ta (°C)
VDS = 10 V
Pulse Test
3.6 V
3.4 V
3
3.2 V
2
3.0 V
Pulse Test
Tc = 25°C
1
0
2.7 V
2
4
6
8
4
3
25°C
2
Tc = 75°C
1
–25°C
VGS = 0 V
0
100
5
3.8 V
Drain Current ID (A)
Drain Current ID (A)
4
10
Typical Transfer Characteristics (1)
Typical Output Characteristics
4.0 V
4.5 V
10 V
1
Drain to Source Voltage VDS (V)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
5
0.1
0
10
1
Drain to Source Voltage VDS (V)
1.5
2
2.5
3
3.5
4
Gate to Source Voltage VGS (V)
Drain Current ID (A)
1.0
VDS = 10 V
Pulse Test
0.1
Tc = 75°C
0.01
25°C
–25°C
0.001
0.0001
0
0.5
1
1.5
2
2.5
Gate to Source Voltage VGS (V)
R07DS0483EJ0200 Rev.2.00
May 09, 2013
3
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Case Temperature
2.5
2
ID = 10 mA
1 mA
1.5
0.1 mA
1
VDS = 10 V
Pulse Test
0.5
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 3 of 6
Preliminary
0.8
Pulse Test
Tc = 25°C
0.6
0.4
1.5 A
0.5 A
0.2 A
0.1 A
1.0 A
0.2
0
0
2
4
6
8
10
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
Tc = 25°C
0.3
VGS = 4.5 V
0.1
10 V
0.03
0.01
0.1
0.3
1
3
10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
RDS(on) (mΩ)
Gate to Source Voltage VGS (V)
260
Pulse Test
VGS = 4.5 V
ID = 1.5 A
220
1A
180
0.5 A
0.2 A
140
100
–25
0
25
50
75
100 125 150
Pulse Test
VGS = 10 V
ID = 1.5 A
150
1A
0.5 A
0.2 A
100
50
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
10
–25°C
25°C
1
200
Case Temperature Tc (°C)
Tc = 75°C
Pulse Test
VDS = 10 V
0.1
0.1
1
Drain Current ID (A)
R07DS0483EJ0200 Rev.2.00
May 09, 2013
10
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VDS(on) (V)
HITK0302MP
1000
Pulse Test
VGS = 0 V
VDS = 30 V
100
10
1
0.1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 4 of 6
HITK0302MP
Preliminary
Switching Characteristics
20
ID = 2.7 A
Tc = 25°C
80
16
VDD =10 V
60
12
25 V
VGS
40
8
VDS
4
20
0
VDD = 25 V
10 V
0
0.8
1.6
2.4
3.2
0
4.0
1000
Switching Time t (ns)
100
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
10
td(on)
tr
0.1
1
10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Gate to Source Voltage
240
Ciss
Ciss (pF)
100
Coss
10
VGS = 0 V
f = 1 MHz
5
230
220
210
Crss
200
10
15
20
25
VDS = 0 V
f = 1 MHz
190
–10
30
–5
0
5
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Body-Drain Diode Forward Voltage vs.
Case Temperature
5
Pulse Test
Tc = 25°C
4
3
VGS = 10 V
0 V, –5V, –10V
5V
2
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0483EJ0200 Rev.2.00
May 09, 2013
Body-Drain Diode Forward Voltage VSDF (V)
Ciss, Coss, Crss (pF)
td(off)
250
1
0
Reverse Drain Current IDR (A)
tf
100
1
0.01
1000
0
VDD = 10 V
VGS = 10 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
1.0
VGS = 0
0.9
ID = 10 mA
0.8
0.7
0.6
0.5
1 mA
0.4
0.3
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 5 of 6
HITK0302MP
Preliminary
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Orderable Part Number
Quantity
HITK0302MPTL-HQ
3000 pcs.
Note:
Shipping Container
178 mm reel, 8 mm Emboss taping
This product is designed for consumer use and not for automotive.
R07DS0483EJ0200 Rev.2.00
May 09, 2013
Page 6 of 6
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Colophon 2.2
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