Renesas HITK0303MPTL-HQ Silicon n channel mos fet power switching Datasheet

Preliminary Datasheet
HITK0303MP
Silicon N Channel MOS FET
Power Switching
R07DS0484EJ0100
Rev.1.00
Jun 22, 2011
Features
 Low on-resistance
RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)
 Low drive current
 High speed switching
 4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
G
1. Source
2. Gate
3. Drain
2
1
2
S
1
Note:
Marking is “MG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
Ratings
30
20
Unit
V
V
ID
ID(Pulse) Note1
IDR
Pch Note2
Tch
Tstg
3.7
5
3.7
0.8
150
–55 to +150
A
A
A
W
C
C
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR-4: 40  40  1 mm)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 1 of 6
HITK0303MP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
Min
30
20
—
—
1.0
Typ
—
—
—
—
—
Max
—
—
10
1
2.0
Unit
V
V
A
A
V
Test conditions
ID = 10 mA, VGS = 0
IG = 100 A, VDS = 0
VGS = 16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
Drain to source on state resistance
RDS(on)
—
42
53
m
ID = 1.8 A, VGS = 10 VNote3
RDS(on)
—
50
70
m
ID = 1.8 A, VGS = 4.5 VNote3
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total gate charge
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
3.9
—
—
—
—
—
—
—
—
6.5
550
87
42
13
39
46
114
8.9
—
—
—
—
—
—
—
—
—
S
pF
pF
pF
ns
ns
ns
ns
nC
ID = 1.8 A, VDS = 10 VNote3
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Qgs
Qgd
VDF
—
—
—
1.0
1.3
0.8
—
—
—
nC
nC
V
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 1 A, VGS = 10 V,
RL = 10 , Rg = 4.7 
VDD = 10 V, VGS = 10 V,
ID = 3.7A
IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 2 of 6
HITK0303MP
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
100
0.8
1
m
D
s
C
O
s
pe
ra
tio
n
0.1
0.2
0
Tc = 25°C
0
25
50
75
100
125
0.01
0.01
150
2.8 V
3.0 V
10 V
4
2.5 V
2
Pulse Test
Tc = 25°C
2.4 V
1
2.3 V
2
4
6
8
4
25°C
3
2
Tc = 75°C
1
–25°C
VGS = 0 V
0
0
100
VDS = 10 V
Pulse Test
2.6 V
3
10
5
2.7 V
Drain Current ID (A)
2.9 V
1
Typical Transfer Characteristics (1)
Typical Output Characteristics
5
0.1
Drain to Source Voltage VDS (V)
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain Current ID (A)
1
m
0.4
100 μs
10
10
0.6
Operation in this area
is limited by RDS(on)
=
Drain Current ID (A)
1.0
PW
Channel Dissipation Pch (W)
1.2
0
0.5
10
Drain to Source Voltage VDS (V)
1
1.5
2
2.5
3
Gate to Source Voltage VGS (V)
Drain Current ID (A)
1.0
VDS = 10 V
Pulse Test
Tc = 75°C
0.1
25°C
0.01
–25°C
0.001
0.0001
0
0.5
1
1.5
2
2.5
Gate to Source Voltage VGS (V)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
3
Gate to Source Cutoff Voltage VGS(off) (V)
Gate to Source Cutoff Voltage vs.
Typical Transfer Characteristics (2)
Case Temperature
2.5
2
ID = 10 mA
1.5
1 mA
0.1 mA
1
VDS = 10 V
Pulse Test
0.5
–25
0
25
50
75
100 125
150
Case Temperature Tc (°C)
Page 3 of 6
Preliminary
0.4
Pulse Test
Tc = 25°C
0.3
0.2
1.5 A
1.0 A
0.1
0
0
2
4
0.5 A
0.2 A
0.1 A
6
8
10
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
Tc = 25°C
0.3
0.1
VGS = 4.5 V
10 V
0.03
0.01
0.1
0.3
1
3
10
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
Drain to Source on State Resistance
RDS(on) (mΩ)
Gate to Source Voltage VGS (V)
100
90
Pulse Test
VGS = 4.5 V
80
ID = 1.5 A
1A
70
0.5 A
60
0.2 A
50
40
30
–25
0
25
50
75
100 125 150
80
70
1A
ID = 1.5 A
60
0.5 A
50
0.2 A
40
30
–25
0
25
50
75
100 125
150
Forward Transfer Admittance vs.
Drain Current
Zero Gate Voltage Drain current vs.
Case Temperature
Pulse Test
VDS = 10 V
–25°C
25°C
1
Pulse Test
VGS = 10 V
Case Temperature Tc (°C)
100
10
90
Case Temperature Tc (°C)
Tc = 75°C
0.1
0.1
1
Drain Current ID (A)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
10
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage VDS(on) (V)
HITK0303MP
10000
1000
Pulse Test
VGS = 0 V
VDS = 30 V
100
10
1
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 4 of 6
HITK0303MP
Preliminary
Switching Characteristics
ID = 3.7 A
Tc = 25°C
80
16
VDD =10 V
60
12
25 V
40
8
VGS
VDS
20
0
4
VDD = 25 V
10 V
0
2
4
6
8
0
10
1000
Switching Time t (ns)
20
100
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
td(off)
td(on)
10 tr
VDD = 10 V
VGS = 10 V
Rg = 4.7 Ω
PW = 5 μs
Tc = 25°C
0.1
10
1
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs.
Drain to Source Voltage
Input Capacitance vs.
Gate to Source Voltage
800
Ciss
750
100
Ciss (pF)
Ciss, Coss, Crss (pF)
100
1
0.01
1000
Coss
VDS = 0 V
f = 1 MHz
10
0
5
10
15
20
25
600
–10
30
–5
0
5
10
Gate to Source Voltage VGS (V)
Reverse Drain Current vs.
Source to Drain Voltage
Body-Drain Diode Forward Voltage vs.
Case Temperature
Pulse Test
Tc = 25°C
4
VGS = 10 V
3
5V
0 V, –5 V, –10 V
2
1
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Body-Drain Diode Forward Voltage VSDF (V)
Drain to Source Voltage VDS (V)
5
0
700
650
Crss
VGS = 0 V
f = 1 MHz
Reverse Drain Current IDR (A)
tf
0.9
VGS = 0
0.8
ID = 10 mA
0.7
0.6
0.5
1 mA
0.4
0.3
–25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Page 5 of 6
HITK0303MP
Preliminary
Package Dimensions
JEITA Package Code
SC-59A
Package Name
MPAK
RENESAS Code
PLSP0003ZB-A
D
Previous Code
MPAK(T) / MPAK(T)V
A
Q
e
E
c
HE
L
A
MASS[Typ.]
0.011g
LP
L1
A3
A
x M S
A
b
Reference Dimension in Millimeters
Symbol
Min Nom Max
e
A2
A
e1
A1
S
b
I1
c
b2
A-A Section
Pattern of terminal position areas
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
Q
1.0
0
1.0
0.35
0.1
2.7
1.35
2.2
0.35
0.15
0.25
1.1
0.25
0.4
0.16
1.5
0.95
2.8
1.3
0.1
1.2
0.5
0.26
3.1
1.65
3.0
0.75
0.55
0.65
0.05
0.55
1.95
1.05
0.3
Ordering Information
Orderable Part Number
Quantity
HITK0303MPTL-HQ
3000 pcs.
Note:
Shipping Container
178 mm reel, 8 mm Emboss taping
This product is designed for consumer use and not for automotive.
R07DS0484EJ0100 Rev.1.00
Jun 22, 2011
Page 6 of 6
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Colophon 1.1
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