HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 1/4 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 20 W audio amplifier, voltage regulator, DC-DC converter and relay driver. Absolute Maximum Ratings (Ta=25°C) TO-252 • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)................................................................................................. 10 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. -40 V BVCEO Collector to Emitter Voltage .............................................................................................. -30 V BVEBO Emitter to Base Voltage ...................................................................................................... -5 V IC Collector Current (DC)................................................................................................................. -3 A IC Collector Current (Pulse)............................................................................................................. -7 A IB Base Current (DC)................................................................................................................ -600 mA Thermal Characteristic Characteristic Symbol Thermal Resistance, junction to case Rθjc Max. 12.5 Unit o C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 - Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 - Unit V V V uA uA V V MHz pF Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=-1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range HJ772 Q 100-200 P 160-320 E 250-500 HSMC Product Specification HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 10000 1000 o o VCE(s at) @ IC=5IB 75 C Saturation Voltage (mV) 125 C o hFE 25 C 100 hFE @ VCE=2V 10 1000 o 75 C 100 o 125 C 10 o 25 C 1 1 10 100 1000 10000 1 10 Collector Current-IC (mA) Saturation Voltage & Collector Current VCE(sat) @ IC=20IB 1000 Saturation Voltage (mV) Saturation Voltage (mV) 10000 Saturation Voltage & Collector Current VCE(sat) @ IC=10IB o 75 C o 25 C 100 o 125 C 10 1000 o 75 C o 25 C 100 o 125 C 10 1 1 1 10 100 1000 1 10000 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current Saturation Voltage & Collector Current 10000 10000 VBE(sat) @ IC=10IB VCE(sat) @ IC=40IB 1000 Saturation Voltage (mV) Saturation Voltage (mV) 1000 10000 10000 o 75 C 100 o 125 C o 25 C 10 o 75 C 1000 o 25 C o 125 C 1 100 1 10 100 1000 Collector Current-IC (mA) HJ772 100 Collector Current-IC (mA) 10000 1 10 100 1000 10000 Collector Current-IC (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 3/4 MICROELECTRONICS CORP. Cutoff Frequency & Collector Current Capacitance & Reverse-Biased Voltage 1000 Cutoff Frequency (MHz)... Capacitance (pF) 1000 100 Cob 10 100 VCE=5V 10 1 1 0.1 1 10 1 100 10 100 1000 Collector Current (mA) Reverse-Biased Voltage (V) Power Derating Safe Operating Area 10000 1.6 1.2 Collector Current-IC (mA) Pd(W), Power Dissipation 1.4 1 0.8 0.6 0.4 PT=1ms 1000 PT=100ms PT=1s 100 10 0.2 0 1 0 25 50 75 100 125 150 175 Ta(ºC ), Ambient Temperature HJ772 200 225 250 1 10 100 Forward Biased Voltage-VCE (V) HSMC Product Specification HI-SINCERITY Spec. No. : HE6015 Issued Date : 1996.04.12 Revised Date : 2003.01.07 Page No. : 4/4 MICROELECTRONICS CORP. TO-252 Dimension Marking: C A H 7 7 2 D B Rank Control Code Date Code G F L J Style: Pin 1.Base 2.Collector 3.Emitter 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ772 HSMC Product Specification