HSMC HLB121D Npn triple diffused planar type high voltage transistor Datasheet

HI-SINCERITY
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 1/4
MICROELECTRONICS CORP.
HLB121D
NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB121D is a medium power transistor designed for use in switching
applications.
TO-126ML
Features
• High breakdown voltage
• Low collector saturation voltage
• Fast switching speed
Absolute Maximum Ratings (TA=25°C)
• Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current (DC) ............................................................................................................................... 300 mA
IC Collector Current (Pulse)............................................................................................................................ 600 mA
IB Base Current (DC)........................................................................................................................................ 40 mA
IB Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
600
-
-
V
IC=100uA
BVCEO
400
-
-
V
IC=10mA
BVEBO
6
-
-
V
IE=10uA
ICBO
-
-
10
uA
VCB=550V
ICEO
-
-
10
uA
VCB=400V
IEBO
-
-
10
uA
VEB=6V
*VCE(sat)1
-
-
400
mV
IC=50mA, IB=10mA
*VCE(sat)2
-
-
750
mV
IC=100mA, IB=20mA
*VBE(sat)
-
-
1
V
IC=50mA, IB=10mA
*hFE1
8
-
-
VCE=10V, IC=10mA
*hFE2
10
-
36
VCE=10V, IC=50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HLB121D
HSMC Product Specification
HI-SINCERITY
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
Saturation Voltage & Collector Current
100000
100
VCE(sat) @ IC=5IB
o
Saturation Voltage (mV)
125 C
o
hFE
25 C
o
75 C
10
hFE @ VCE=10V
10000
o
75 C
1000
o
125 C
o
25 C
100
10
1
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000
o
Saturation Voltage (mV)
25 C
o
75 C
o
125 C
VBE(sat) @ IC=5IB
100
0.1
1
10
100
1000
Collector Current-IC (mA)
HLB121D
HSMC Product Specification
HI-SINCERITY
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 3/4
MICROELECTRONICS CORP.
TO-126ML Dimension
A
C
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Marking:
L
Pb Free Mark
D
H
LB
1 2 1D
E
Pb-Free: " . " (Note)
Normal: None
I
Date Code
B
1
2
Control Code
Note: Green label is used for pb-free packing
3
Pin Style: 1.Emitter 2.Collector 3.Base
F
H
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
M
G
K
J
N
Min.
7.74
10.87
0.88
1.28
3.50
2.61
13
1.18
2.88
0.68
3.44
1.88
0.50
Max.
8.24
11.37
1.12
1.52
3.75
3.37
1.42
3.12
0.84
2.30
3.70
2.14
0.51
*: Typical, Unit: mm
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB121D
HSMC Product Specification
HI-SINCERITY
Spec. No. : HD200205
Issued Date : 2002.05.01
Revised Date : 2005.08.16
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HLB121D
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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