HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 1/4 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-251 • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................................ +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)................................................................................................. 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC) .................................................................................................................. 1 A IC Collector Current (Pulse) .............................................................................................................. 2 A Electrical Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Ton Tstg Toff Min. 600 400 8 10 10 6 - Typ. 0.4 2.4 0.3 Max. 10 10 0.8 0.9 1.2 1.8 50 1.1 4 0.7 Unit V V V uA uA V V V V uS uS uS Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30Ma IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank B1 B2 B3 B4 B5 B6 B7 B8 Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50 HLB123I HSMC Product Specification HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Saturation Voltage & Collector Current Current Gain & Collector Current 10000 100 o Saturation Voltage (mV) 125 C o 25 C o hFE 75 C 10 1000 o 75 C o 125 C 100 o 25 C hFE @ VCE=5V VCE(sat) @ IC=10IB 10 1 1 10 100 1000 1 10000 100 1000 10000 On Voltage & Collector Current Saturation Voltage & Collector Current 10000 1000 VBE(on) @ VCE=5V On Voltage (mV) Saturation Voltage (mV) 10 Collector Current IC (mA) Collector Current IC (mA) o 75 C 1000 o 25 C o 125 C VBE(s at) @ IC=10IB 100 100 1 10 100 1000 10000 1 Collector Current IC (mA) 10 100 1000 Collector Current (mA) Switching Time & Collector Current Capacitance & Reverse-Biased Volatge 10.0 100 Switching Time (us) Capacitance (pF) VCC=100V, IC=5IB1 =-5IB2 Cob 10 Tstg 1.0 Tf Ton 0.1 1 0.1 1 10 Reverse-Biased Voltage (V) HLB123I 100 0.1 1.0 Collector Current (A) HSMC Product Specification HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 3/4 MICROELECTRONICS CORP. PD - Tc Safe Operating Area 10 20 Collector Current-IC(A) PD(W) , Power Dissipation 25 15 10 PT=1ms 1 PT=1s 0.1 PT=100ms 5 0 0.01 0 50 100 o 150 Ambient Temperature-TC ( C ) HLB123I 200 1 10 100 1000 Forward Voltage-VCE(V) HSMC Product Specification HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2002.06.10 Page No. : 4/4 MICROELECTRONICS CORP. TO-251 Dimension A B Marking: C L B H 1 2 3 I D Date Code F Control Code G Style: Pin 1.Base 2.Collector 3.Emitter 3 I K E H 2 1 J 3-Lead TO-251 Plastic Package HSMC Package Code: I *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Dimension and tolerance based on our Spec. dated May. 24,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB123I HSMC Product Specification