HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 1/4 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features TO-220 • High Speed Switching • Low Saturation Voltage • High Reliability Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................ -55 ~ +150 °C Junction Temperature ................................................................................................................ +150 °C • Maximum Power Dissipation Total Power Dissipation (Tc=25°C)................................................................................................. 35 W • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage ................................................................................................. 600 V BVCEO Collector to Emitter Voltage .............................................................................................. 400 V BVEBO Emitter to Base Voltage ....................................................................................................... 8 V IC Collector Current (DC)................................................................................................................... 2 A IC Collector Current (Pulse)............................................................................................................... 4 A IB Base Current (DC)..........................................................................................................................1 A IB Base Current (Pulse) ..................................................................................................................... 2 A Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Min. 600 400 8 10 10 6 15 Typ. - Max. 10 10 0.3 0.8 0.9 1.2 40 - Unit V V V uA uA V V V V MHz Test Conditions IC=1mA IC=10mA IE=1mA VCB=600V VEB=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA VCE=5V, IC=0.3A VCE=5V, IC=0.5A VCE=5V, IC=1A VCE=10V, IC=0.3, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE1 Rank Range HLB124E B1 10~17 B2 13~22 B3 18~27 B4 23~32 B5 28~37 B6 33~40 HSMC Product Specification HI-SINCERITY Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 2/4 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 100000 100 o o 75 C Saturation Voltage (mV) 125 C o hFE 25 C 10 10000 o 75 C 1000 o 125 C o 25 C 100 hFE @ VCE=5V VCE(sat) @ IC=10IB 1 10 1 10 100 1000 1 10000 10 Collector Current IC (mA) 100 1000 10000 Collector Current IC (mA) On Voltage & Collector Current Saturation Voltage & Collector Current 1000 10000 On Voltage (mV) Saturation Voltage (mV) VCE=5V o 75 C 1000 o 25 C o 125 C VBE(sat) @ IC=10IB 100 100 1 10 100 1000 1 10000 Collector Current IC (mA) 10 100 1000 10000 Collector Current (mA) Switching Time & Collector Current Capacitance & Reverse-Biased Voltage 10 100 Switching Time (us) Capacitance (Pf) VCC=100V, IC=5IB1=5IB2 Cob 10 Ton 1 Tstg Tf 1 0.1 1 10 Reverse Biased Voltage (V) HLB124E 100 0.1 1 10 Collector Current (A) HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 3/4 Safe Operating Area Collector Current (mA) 10000 1000 PT=1 ms 100 PT=100 ms PT=1 s 10 1 1 10 100 1000 Forward Voltage (V) HLB124E HSMC Product Specification HI-SINCERITY Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2002.01.07 Page No. : 4/4 MICROELECTRONICS CORP. TO-220AB Dimension Marking: B A D E C HSMC Logo Part Number Date Code Product Series Rank H K M I Style: Pin 1.Base 2.Collector 3.Emitter 3 G N 2 1 4 P O 3-Lead TO-220AB Plastic Package HSMC Package Code: E *: Typical Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 DIM A B C D E G H Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HLB124E HSMC Product Specification