HP HLMP-4100 T-1 3/4 (5 mm) double heterojunction algaas very high intensity red led lamp Datasheet

Agilent HLMP-4100/4101
T-13/4 (5 mm)
Double Heterojunction AlGaAs
Very High Intensity Red LED Lamps
Data Sheet
Description
These solid state LED lamps
utilize newly developed double
heterojunction (DH) AlGaAs/GaAs
material technology. This LED
material has outstanding light
output efficiency over a wide range
of drive currents. The lamp package
has a tapered lens designed to
Features
• 1000 mcd at 20 mA
• Very high intensity at low drive
currents
• Narrow viewing angle
• Outstanding material efficiency
• Low forward voltage
• CMOS/MOS compatible
• TTL compatible
• Deep red color
concentrate the luminous flux
into a narrow radiation pattern to
achieve a very high intensity. The
LED color is deep red at the
dominant wavelength of 637
nanometers. These lamps may be
DC or pulse driven to achieve
desired light output.
Applications
• Bright ambient lighting conditions
• Emitter/detector and signaling
applications
• General use
Package Dimensions
0.89 (0.035)
0.64 (0.025)
6.10 (0.240)
5.59 (0.220)
1.32 (0.052)
1.02 (0.040)
5.08 (0.200)
4.57 (0.180)
CATHODE
2.54 (0.100)
NOMINAL
9.19 (0.362)
8.43 (0.332)
1.27 (0.050) NOM.
12.44 (0.490)
11.68 (0.460)
23.0 (0.90) MIN.
0.64 (0.025)
SQUARE
NOMINAL
Selection Guide
Luminous Intensity Iv (mcd) at 20 mA
Min.
Typ.
Max.
500.0
750.0
–
700.0
1000.0
–
1400.0
2700.0
4000.0
Device HLMP4100
4101
4101-ST0xx
2θ1/2 [1]
Degree
8
8
8
Note:
1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical
centerline value.
Part Numbering System
HLMX
-
4
1
XX
-
X
X
X
XX
Mechanical Option
00: Bulk
Color Bin Options
0: Full color bin distribution
Maximum Iv Bin Options
0: Open (No. max. limit)
Others: Please refer to the Iv bin Table
Minimum Iv Bin Options
Please refer to the Iv bin Table
Brightness Level
00: Lower brightness
01: Higher brightness
Notes:
1. ‘0’ indicates no maximum intensity limit.
2. ‘0’ indicates full color distribution.
2
Absolute Maximum Ratings at TA = 25°C
Parameter
Maximum Rating
Units
300
mA
20
mA
DC Current[3]
30
mA
Power Dissipation
87
mW
Reverse Voltage (IR = 100 µA)
5
V
Transient Forward Current (10 µs Pulse)[4]
500
mA
Operating Temperature Range
-20 to +100
°C
Storage Temperature Range
-55 to +100
°C
Peak Forward Current[1, 2]
Average Forward
Current[2]
Wave Soldering Temperature [1.59 mm (0.063 in.) from body]
250°C for 3 seconds
Lead Solder Dipping Temperature [1.59 mm (0.063 in.) from body]
260°C for 5 seconds
Notes:
1. Maximum IPEAK at f = 1 kHz, DF = 6.7%.
2. Refer to Figure 6 to establish pulsed operating conditions.
3. Derate linerally as shown in Figure 5.
4. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
is not recommended that the device be operated at peak currents beyond the Absolute Maximum Peak Forward Current.
wire bonds. It
Electrical/Optical Characteristics at TA = 25°C
Symbol
VF
VR
λPEAK
λd
∆λ 1/2
τs
Description
Forward Voltage
Reverse Breakdown Voltage
Peak Wavelength
Dominant Wavelength
Spectral Line Halfwidth
Speed of Response
C
θjc
ηv
Capacitance
Thermal Resistance
Luminous Efficacy
Min.
5.0
Typ.
1.8
15.0
650
642
20
30
30
220
80
Max.
2.2
Unit
V
V
nm
nm
nm
ns
pF
°C/W
1 m/W
Test Condition
20 mA
IR = 100 µA
Measurement at peak
Note 1
Exponential Time
Constant, e-t/2
VF = 0, f = 1 MHz
Junction to Cathode Lead
Note 2
Notes:
1. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and represents the color of the device.
2. The radiant intensity, Ie, in watts per steradian, may be found from the equation Ie = Iv/ηv, where Iv is the luminous intensity in candelas and ηv is
luminous efficacy in lumens/watt.
3. The approximate total luminous flux output within a cone angle of 2θ about the optical axis, φv(2θ), may be obtained from the following formula:
φv(2θ) = [φv(θ)/Iv(0)]Iv; Where: φv(θ)/Iv(0) is obtained from Figure 7.
3
IF – FORWARD CURRENT – mA
RELATIVE INTENSITY
1.0
0.5
0
0
600
650
700
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
0.5
WAVELENGTH – nm
1.0
0.8
0.6
0.4
0.2
10
15
20
25
30
ηV – RELATIVE EFFICIENCY (NORMALIZED AT 20 mA)
NORMALIZED LUMINOUS INTENSITY
(NORMALIZED AT 20 mA)
1.2
5
40
0.8
0.6
0.4
0.2
0
RθJ-A = 559°C/W
RθJ-A = 574°C/W
RθJ-A = 689°C/W
10
10
9
8
7
6
5
4
3
2
1
10
100
1000
Hz
1
z
4
Figure 4. Relative efficiency vs. peak forward current.
300
Figure 5. Maximum forward dc current vs. ambient temperature
derating based on TJ MAX. = 110°C.
200 300
100
1 KH
TA – AMBIENT TEMPERATURE – °C
50
Hz
0 10 20 30 40 50 60 70 80 90 100 110
20
z
3 KH
5
0
10
IPEAK – PEAK FORWARD CURRENT – mA
10 K
IF – FORWARD CURRENT – mA
30
5
z
00 H
E–1
RAT
ESH
EFR
f–R
35
15
3.5
1.0
IPEAK MAX. RATIO OF MAXIMUM PEAK CURRENT
TO TEMPERATURE DERATED
IDC MAX. MAXIMUM DC CURRENT
Figure 3. Relative luminous intensity vs. dc forward current.
20
3.0
2.5
1.2
IDC – DC FORWARD CURRENT – mA
25
2.0
Figure 2. Forward current vs. forward voltage.
1.4
0
1.5
VF – FORWARD VOLTAGE – V
Figure 1. Relative intensity vs. wavelength.
0
1.0
10000
tp – PULSE DURATION – µs
Figure 6. Maximum tolerable peak current vs. peak duration (IPEAK
MAX. determined from temperature derated IDC MAX.).
10°
0°
30°
40°
0.14
0.135
0.12
50°
60°
0.10
0.08
70°
0.06
0.04
80°
0.02
90°
NORMALIZED INTENSITY
0
10
20
30
40
50
60
70
80
0
90 100
θ – ANGLE FROM OPTICAL CENTERLINE – DEGREES
(CONE HALF ANGLE)
ϕN (θ) LUMINOUS FLUX TO INTENSITY RATIO
WITHIN A GIVEN CONE ANGLE
IV (0)
20°
Figure 7. Relative luminous intensity vs. angular displacement.
Intensity Bin Limits
Color
Red
Bin
P
Q
R
S
T
U
V
W
X
Y
Z
Intensity Range (mcd)
Min.
Max.
540.0
850.0
850.0
1200.0
1200.0
1700.0
1700.0
2400.0
2400.0
3400.0
3400.0
4900.0
4900.0
7100.0
7100.0
10200.0
10200.0
14800.0
14800.0
21400.0
21400.0
30900.0
Tolerance for each bin limit is ± 18%.
Mechanical Option Matrix
Mechanical Option Code
00
Definition
Bulk Packaging, minimum increment 500 pcs/bag
Note:
All categories are established for classification of products. Products may not be available in all
categories. Please contact your local Agilent representative for further clarification/information.
5
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
China: 10800 650 0017
Hong Kong: (+65) 6756 2394
India, Australia, New Zealand: (+65) 6755 1939
Japan: (+81 3) 3335-8152 (Domestic/International), or 0120-61-1280 (Domestic Only)
Korea: (+65) 6755 1989
Singapore, Malaysia, Vietnam, Thailand,
Philippines, Indonesia: (+65) 6755 2044
Taiwan: (+65) 6755 1843
Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5966-0969E
November 11, 2004
5988-2228EN
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