N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HM13002 █ HIGH VOLTAGE SWITCH MODE APPLICICATIONS High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………30W VCBO——Collector-Base Voltage………………………………600V 1―Emitter，E VCEO——Collector-Emitter Voltage……………………………400V 2―C ollector，C 3― Base，B V EB O ——Emitter-Base Voltage………………………………9V I C ——Collector Current……………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 600 V IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 400 V IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 9 V IE=1mA， IC=0 DC Current Gain 10 HFE VCE=10V, IC=0.1A 40 VCE(sat)1 Collector- Emitter Saturation Voltage 0.8 V IC=1A, IB=500mA VCE(sat)2 Collector- Emitter Saturation Voltage 0.8 V IC=0.5A, IB=100mA VBE(sat) Base-Emitter Saturation Voltage 1.2 V IC=0.5A, IB=100mA ICBO Collector Cut-off Current 10 μA VCB=500V, IE=0 IEBO Emitter-Base Cut-off Current 10 μA VEB=9V, IC=0 VCE=10V,IC=0.1A,f=1MHz 1.1 MHz μs fT tON Current Gain-Bandwidth Product Turn On Time tSTG Storage Time 4.0 μs IB1=0.2A,IB2=-0.2A Fall Time 0.7 μs RL=125Ω tF 8 VCC=125V, IC=1A, █ hFE Classification H1 H2 H3 H4 10-16 14-21 19-26 24-31 H5 29-40