HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications. Features SOT-23 • Low Collector Saturation Voltage • High speed switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ......................................................................................... 40 V VCEO Collector to Emitter Voltage ...................................................................................... 15 V VEBO Emitter to Base Voltage ........................................................................................... 4.5 V IC Collector Current ....................................................................................................... 500 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. 40 15 4.5 700 40 20 500 - Typ. 900 - Max. 400 100 250 300 600 850 1.5 120 4 Unit V V V nA nA mV mV mV mV V MHz pF Test Conditions IC=100uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 VEB=2V, IC=0 IC=10mA, IB=1mA IC=10mA, IB=0.3mA IC=100mA, IB=10mA IC=10mA, IB=1mA IC=100mA, IB=1mA IC=10mA, VCE=1V IC=100mA, VCE=2V IC=10mA, VCE=10V, f=100MHZ VCB=5V, f=1MHz, IE=0 *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HMBT2369 HSMC Product Specification HI-SINCERITY Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 2/3 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 100000 Saturation Voltage (mV) 10000 VCE=2V 100 hFE VCE=1V 10 1000 VCE(sat) @ IC=33.3IB 100 VCE(sat) @ IC=10IB 10 1 1 0.1 1 10 100 1 1000 Collector Current-IC (mA) 10 100 1000 Collector Current-IC (mA) Saturation Voltage & Collector Current Cutoff Frequency & Collector Current 1000 10000 Cutoff Frequency (MHz) Saturation Voltage (mV) FT @ VCE=10V VBE(sat) @ IC=10IB 1000 VBE(sat) @ IC=100IB 100 100 1 10 100 1 1000 Collector Current-IC (mA) 10 100 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Safe Operating Area 10 Collector Current-IC (A) Capaaitance (pF) 10 Cob 1 PT=1m PT=100m 0 PT=1s 1 0 0.1 1 10 Reverse Biased Voltage(V) HMBT2369 100 1 10 Forward Voltage-VCE (V) 100 HSMC Product Specification HI-SINCERITY Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 3/3 MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L 1 J 3 B S 1 V Rank Code Control Code 2 G 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N C D H K J Style: Pin 1.Base 2.Emitter 3.Collector *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBT2369 HSMC Product Specification