HMC-ALH140 AMPLIFIERS - LOW NOISE - CHIP v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Typical Applications Features This HMC-ALH140 is ideal for: Noise Figure: 4 dB • Point-to-Point Radios Gain: 11.5 dB • Point-to-Multi-Point Radios P1dB Output Power: +15 dBm • VSAT Supply Voltage: +4V @ 60 mA • SATCOM Die Size: 2.5 x 1.4 x 0.1 mm Functional Diagram General Description The HMC-ALH140 is a two Stage GaAs MMIC HEMT Low Noise Amplifier die which operates between 24 and 40 GHz. The amplifier provides 11.5 dB of gain, from a bias supply of +4V @ 66 mA with a noise figure of 4 dB. The HMC-ALH140 amplifier die is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size (2.10 mm2). Electrical Specifi cations, TA = +25° C, Vdd= 4V [1], Idd = 60mA [2] Parameter Min. Frequency Range Gain Typ. Max. Min. 24 - 30 10 Typ. Max. Min. 24 - 40 12 10 11.5 10 Typ. Max. GHz 11.5 dB Noise Figure 4 4 4 Input Return Loss 13 13 20 dB Output Return Loss 15 15 20 dB Output Power for 1 dB Compression 15 15 15 dBm Supply Current (Idd) 60 100 60 100 60 100 [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) 0-2 Units 35 - 40 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC-ALH140 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz Linear Gain vs. Frequency Noise Figure vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency AMPLIFIERS - LOW NOISE - CHIP v00.0907 Note: Measured Performance Characteristics (Typical Performance at 25°C) Vd= 2 V, Id = 55 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0-3 HMC-ALH140 v00.0907 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz AMPLIFIERS - LOW NOISE - CHIP Absolute Maximum Ratings Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc RF Input Power 6 dBm Channel Temperature 180 °C Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 0-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com