HMC565 v03.1217 LOW NOISE AMPLIFIERS - CHIP GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz Typical Applications Features The HMC565 is ideal for use as a LNA or driver amplifier for: Noise Figure: 2.3 dB • Point-to-Point Radios OIP3: 20 dBm • Point-to-Multi-Point Radios & VSAT Single Supply: +3V @ 53 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military & Space Small size: 2.53 x 0.98 x 0.10 mm Functional Diagram General Description Gain: 22 dB The HMC565 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 6 to 20 GHz. The HMC565 features 22 dB of small signal gain, 2.3 dB of noise figure and has a consistent IP3 of 20 dBm across the operating band. This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, wideband performance, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Electrical Specifications, TA = +25° C, Vdd 1, 2, 3 = +3V Parameter Min. Frequency Range Gain 20 Gain Variation Over Temperature Max. Min. Typ. Max. 12 - 20 23 17 Units GHz 21 dB 0.025 0.035 0.025 0.035 dB/ °C Noise Figure 2.3 2.8 2.5 3.0 dB Input Return Loss 15 12 Output Return Loss 15 10 dB 10 dBm 12 dBm 20 dBm 53 mA Output Power for 1 dB Compression (P1dB) 7 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 10 7 12 17 Supply Current (Idd)(Vdd = +3V) 1 Typ. 6 - 12 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. 20 53 17 dB For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC565 v03.1217 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 20 GAIN (dB) RESPONSE (dB) 20 10 S21 S11 S22 0 15 +25C +85C -55C 10 -10 5 -20 0 -30 4 6 8 10 12 14 16 18 20 4 22 6 8 10 12 14 16 18 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) RETURN LOSS (dB) +25C +85C -55C -5 -10 -15 -5 +25C +85C -55C -10 LOW NOISE AMPLIFIERS - CHIP 30 30 -15 -20 -20 -25 4 6 8 10 12 14 16 18 20 4 22 6 8 12 14 16 18 20 22 20 22 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 10 0 -10 ISOLATION (dB) 8 NOISE FIGURE (dB) 10 +25C +85C -55C 6 4 2 +25C +85C -55C -20 -30 -40 -50 0 -60 4 6 8 10 12 14 16 FREQUENCY (GHz) 18 20 22 4 6 8 10 12 14 16 18 FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 2 HMC565 v03.1217 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 12 8 +25C +85C -55C 4 12 8 +25C +85C -55C 4 0 0 4 6 8 10 12 14 16 18 20 22 4 6 8 10 FREQUENCY (GHz) 12 14 16 18 20 22 FREQUENCY (GHz) Output IP3 vs. Temperature Power Compression @ 13 GHz 30 Pout (dBm), GAIN (dB), PAE(%) 25 25 OIP3 (dBm) LOW NOISE AMPLIFIERS - CHIP P1dB vs. Temperature 20 15 +25C +85C -55C 10 5 4 6 8 10 12 14 16 18 20 20 10 5 0 -5 -25 22 Pout Gain PAE 15 -20 -15 FREQUENCY (GHz) -10 -5 INPUT POWER (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 13 GHz 10 25 8 Gain 7 6 15 P1dB 5 4 10 3 2 5 Noise Figure 1 0 0 2.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) 9 20 3 3.5 Vdd (Vdc) 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC565 v03.1217 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz +3.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) 10 dBm +2.5 51 Channel Temperature 175 °C +3.0 53 +3.5 55 Drain Bias Voltage (Vdd1, Vdd2, Vdd3) Continuous Pdiss (T= 85 °C) (derate 8.9 mW/°C above 85 °C) 0.75 W Thermal Resistance (channel to die bottom) 119 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 1A Note: Amplifier will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. LOW NOISE AMPLIFIERS - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 4 HMC565 v03.1217 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz LOW NOISE AMPLIFIERS - CHIP Pad Descriptions 5 Pad Number Function Description 1 IN This pad is AC coupled and matched to 50 Ohms from 6 - 20 GHz. 2, 3, 4 Vdd1, 2, 3 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 µF are required. 5 OUT This pad is AC coupled and matched to 50 Ohms from 6 - 20 GHz. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D HMC565 v02.0209 v03.1217 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 6 - 20 GHz The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab LOW NOISE AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D 6