NPN DARLINGTON TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HP142TS █ APPLICATIONS High DC Current Gain █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 70W VCBO——Collector-Base Voltage…………………………… 100V VCEO——Collector-Emitter Voltage………………………… 100V 1―Base，B VEBO ——Emitter-Base Voltage……………………………… 5V 2―Collector，C 3―Emitter, E IC——Collector Current（DC）……………………………… 8A IB——Base Current……………………………………………0.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min BVCEO(SUS) Collector-Emitter Sustaining Voltage 100 ICEO Collector Cutoff Current ICBO Unit Test Conditions V IC=30mA, IB=0 2 mA VCE=50V, IB=0 Collector Cutoff Current 1 mA VCB=100V, IE=0 IEBO Emitter-Base Cutoff Current 2 mA VEB=5V, IC=0 HFE（1） DC Current Gain HFE（2） VCE(sat1) Typ Max 1000 VCE=4V, IC=0.5A 1000 VCE=4V, IC=3A Collector- Emitter Saturation Voltage VCE(sat2) 2 V IC=5A, IB=10mA 3 V IC=10A, IB=40mA VBE(sat) Base- Emitter Saturation Voltage 3.5 V IC=10A, IB=40mA VBE(on) Base- Emitter On Voltage 3 V VCE=4V,IC=10A, tD Deiay time 0.15 uS tR Rise Time 0.55 uS tS Storage Time 2.5 uS tF Fall Time 2.5 uS Vcc=30V,Ic=5A IB1=20mA IB2=-20mA Shantou Huashan Electronic Devices Co.,Ltd. NPN DARLINGTON TRANSISTOR HP142TS