HUASHAN HP42C Pnp silicon transistor Datasheet

PNP S I L I C O N T R AN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP42C
█ APPLICATIONS
Medium Power Linear Switching Application.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)…………………………65W
PC——Collector Dissipation(TA=25℃)………………………… 2W
1―Base,B
2―Collector,C
3― Emitter,E
VCBO——Collector-Base Voltage………………………………-100V
VCEO——Collector-Emitter Voltage……………………………-100V
V EBO ——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………………-6A
I B ——Base Current……………………………………………-2A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
BVCEO
Collector-Emitter Breakdown Voltage
-100
ICEO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
ICES
Collector Cut-off Current
HFE(1) DC Current Gain
30
HFE(2) DC Current Gain
15
Typ
Max
Unit
Test Conditions
V
IC=-30mA,
-0.7
mA
VCE=-60V, IB=0
-1
mA
VEB=-5V, IC=0
-400
μA
VCE=-100V, VEB=0
IB=0
VCE=-4V, IC=-0.3A
75
VCE=-4V, IC=-3A
VCE(sat)
Collector- Emitter Saturation Voltage
-1.5
V
IC=-6A, IB=-600mA
VBE(on)
Base-Emitter On Voltage
-2.0
V
VCE=-4V, IC=-6A
VCE=-10V, IC=-500mA,
f=1MHz
fT
Current Gain-Bandwidth Product
3.0
MHz
Shantou Huashan Electronic Devices Co.,Ltd.
HP42C
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