HSMC HSB1109S Pnp epitaxial planar transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/4
HSB1109S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB1109S is designed for low frequency and high voltage
amplifier applications complementary pair with HSD1609S.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage ................................................................................... -160 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
-160
-160
-5
60
30
-
Typ.
140
5.5
Max.
-10
-2
-1.5
320
-
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=-10uA, IE=0
IC=-1mA. IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
HSB1109S
B
60-120
C
100-200
D
160-320
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/4
MICROELECTRONICS CORP.
Characteristics Curve
Saturation Voltage & Collector Current
Current Gain & Collector Current
1000
1000
o
Saturation Voltage (mV)
125 C
hFE
o
25 C
100
o
75 C
o
75 C
o
125 C
100
o
25 C
hFE @ VCE=5V
VCE(sat) @ IC=10IB
10
10
1
10
0.1
100
1
Collector Current-IC (mA)
10
100
Collector Current-IC (mA)
ON Voltage & Collector Current
Output Capacitance &
Reverse-Blased Voltage
1000
20
o
Output Capacttance-Cob (pF)
ON Voltage (mV)
25 C
o
75 C
o
125 C
15
10
5
VBE(ON) @ VCE=5V
100
0
0.1
1
10
100
0.1
Collector Current-IC (mA)
10
100
1000
Reverse-Biased-VCB (V)
Cutoff Frequency & Collector Current
Safe Operating Area
1000
1000
Collector Current (mA)
Cutoff Frequency (MHz)
1
100
10
100
10
1
1
0.1
1
10
Collector Current-IC (mA)
HSB1109S
100
1000
1
10
100
1000
Forward Biased Voltage (V)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 3/4
Power Derating
1000
Power Dissipation-PD (mW)
900
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
140
160
o
Ambient Temperature-Ta ( C)
HSB1109S
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 4/4
MICROELECTRONICS CORP.
TO-92 Dimension
α2
A
Marking:
H
SB
1 1 0 9 S
B
1
2
Rank
3
Date Code
Control Code
α3
Style: Pin 1.Emitter 2.Collector 3.Base
C
D
H
I
G
α1
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1109S
HSMC Product Specification
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