HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 1/3 HSD879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features TO-92 • Charger-up time is about 1 ms faster than of a germanium transistor • Small saturation voltage can bring less power dissipation and flashing times Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW • Maximum Voltages and Currents (Ta=25°C) BVCBO Collector to Base Voltage....................................................................................... 30 V BVCEX Collector to Emitter Voltage .................................................................................... 20 V BVCEO Collector to Emitter Voltage.................................................................................... 10 V BVEBO Emitter to Base Voltage............................................................................................ 6 V IC Collector Current............................................................................................................... 3 A IC Collector Current (Pluse) .................................................................................................. 5 A Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit BVCEO BVEBO BVCBO BVCEX ICBO IEBO *hFE *VCE(sat) fT Cob 10 6 30 20 140 - 210 0.3 200 30 100 100 400 0.4 - V V V V nA nA V MHZ pF Test Condition IC=1mA IE=10uA IC=10uA IC=1mA, VBE=3V VCB=20V VBE=4V VCE=2V, IC=3A IC=3A, IB=60mA VCE=10V, IC=50mA VCB=10V, f=1MHZ *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HSD879 HSMC Product Specification HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 2/3 MICROELECTRONICS CORP. Characteristics Curve Saturation Voltage & Collector Current Current Gain & Collector Current 1000 1000 VCE(sat) @ IC=50IB o 125 C o Saturation Voltage (mV) 75 C o hFE 25 C hFE @ VCE=2V o 75 C 100 o 125 C o 25 C 100 10 1 10 100 1000 10000 1 Collector Current-IC (mA) 100 1000 10000 Collector Current-IC (mA) Capacitance & Reverse-Biased Voltage Cutoff Frequency & Collector Current 100 1000 VCE=10V 100 Capacitance (pF) Cutoff Frequency (MHz)... 10 10 1 Cob 10 1 1 10 100 1000 Collector Current (mA) 1 10 100 Reverse Biased Voltage (V) Power Derating 800 Power Dissipation-PD (mW) 700 600 500 400 300 200 100 0 0 50 100 150 200 o Ambient Temperature-Ta ( C) HSD879 HSMC Product Specification HI-SINCERITY Spec. No. : HA200207 Issued Date : 1996.07.15 Revised Date : 2002.02.25 Page No. : 3/3 MICROELECTRONICS CORP. TO-92 Dimension α2 A Marking: H SD 8 7 9 B 1 2 3 Date Code Control Code α3 Style: Pin 1.Emitter 2.Collector 3.Base C D H I G α1 E F 3-Lead TO-92 Plastic Package HSMC Package Code: A *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD879 HSMC Product Specification