HSM11SPT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere HSM18SPT FEATURES *Small surface mounting type. (SOD-123S) * Low forward voltage, high current capability * Low leakage current * Metallurgically bonded construction * Glass passivated junction * High temperature soldering guaranteed : 260oC/10 seconds at terminals SOD-123S 1.4~1.95 0.5~1.0 2.55~3.0 0.8~1.35 0.25(max) 0.25(min) CIRCUIT (2) 3.5~3.95 SOD-123S Dimensions in millimeters (1) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS SYMBOL HSM11SPT HSM12SPT HSM13SPT HSM14SPT HSM15SPT HSM16SPT HSM17SPT HSM18SPT UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 Volts o Maximum Average Forward Rectified Current TL = 110 C IO 1.0 Amps IFSM 30 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range CJ 15 TJ, TSTG 12 pF o -65 to +150 C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 1.0 A DC Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25oC Maximum Full Load Reverse Current Average, Full Cycle at TA = 55oC Maximum Reverse Recovery Time (Note 2) SYMBOL HSM11RST HSM12SPT HSM13SPT HSM14SPT HSM15SPT HSM16SPT HSM17SPT HSM18SPT UNITS VF 1.0 1.3 1.5 1.7 Volts IR 5.0 uAmps IR 100 uAmps trr NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts 2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A 50 70 nSec 2004-07 RATING CHARACTERISTIC CURVES ( HSM11SPT THRU HSM18SPT ) 10 NONINDUCTIVE trr +0.5A (-) D.U.T (+) 0 PULSE GENERATOR (NOTE 2) 25 Vdc (approx) (-) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A 1cm NOTES: 1. Rise Time = 7 ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10 ns max. Source Impedlance= 50 ohms. SET TIME BASE FOR 10/20 nS/cm FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.0 Single Phase Half Wave 60Hz Resistive or Inductive Load 0.5 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE ( OC ) 10 TJ =100oC 1.0 TJ =25oC .1 PT PT 8S 6S 7S PT ~1 M1 HS HS M1 M1 HS 4SP T~1 1SP T~1 5SP T 3SP T Pulse Width = 300uS 1% Duty Cycle 1.0 M1 TJ =125oC 10 HS INSTANTANEOUS FORWARD CURRENT, ( A ) INSTANTANEOUS REVERSE CURRENT, (uA) 1.5 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 0.1 TJ =25oC .01 .001 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % ) 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, ( V ) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1.8 FIG. 6 - TYPICAL JUNCTION CAPACITANCE 35 200 30 JUNCTION CAPACITANCE, ( pF ) PEAK FORWARD SURGE CURRENT, ( A ) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, ( A ) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5 0 100 60 40 HSM 11SP 20 T~15 HSM16 SPT SPT~18 10 SPT 6 4 TJ =25oC 2 1 1 2 5 10 20 NUMBER OF CYCLES AT 60 Hz 50 100 .1 .2 .4 1.0 2 4 10 20 REVERSE VOLTAGE, ( V ) 40 100