Hitachi HSM223C Silicon epitaxial planar diode for high speed switching Datasheet

HSM223C
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-092C (Z)
Rev. 3
Features
• Low capacitance, proof against high voltage.
• Fast recovery time.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HSM223C
A8
MPAK
Pin Arrangement
3
2
(Top View)
1
1 NC
2 Cathode
3 Anode
HSM223C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Peak forward current
I FM
300
mA
Non-Repetitive peak forward surge current
I FSM *
4
A
Average forward current
IO
100
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Note: Within 1µs forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF1
—
0.76
1.0
V
I F = 10mA
VF2
—
0.88
1.0
I F = 50mA
VF3
—
0.97
1.2
I F = 100mA
Reverse current
IR
—
—
0.1
µA
VR = 80V
Capacitance
C
—
0.5
2.0
pF
VR = 0V, f = 1MHz
Reverse recovery time
t rr
—
—
3.0
ns
I F = 10mA, VR = 6V, RL= 50Ω
HSM223C
10
10
=7
5°C
=2
5°C
Ta
=–
25°
C
–3
–4
Ta
10
–2
Ta
Forward current I F (A)
10
–1
–5
10
10
–6
0
0.6
0.8
0.2
0.4
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
10
Reverse current I R (A)
10
–4
–5
10
–6
Ta = 75°C
10
10
10
–7
Ta = 50°C
Ta = 25°C
–8
–9
Ta = 0°C
–10
Ta = –25°C
10
–11
10
0
60
80
20
40
Reverse voltage VR (V)
100
Fig.2 Reverse current Vs. Reverse voltage
HSM223C
f = 1MHz
Capacitance C (pF)
10
1.0
–1
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
102
HSM223C
Package Dimensions
0.65 – 0.3
+ 0.10
0.4 – 0.05
Laser Mark
+ 0.1
Unit: mm
+ 0.10
0.16 – 0.06
0.3
2.8 +– 0.1
+ 0.2
– 0.6
2.8
2 Cathode
3 Anode
+ 0.2
1.9
1 NC
1.1 – 0.1
1
0.95
0.1
0.65 +– 0.3
2
0.95
0 – 0.10
0.3
A 8
1.5
3
HITACHI Code
MPAK(1)
JEDEC Code
—
EIAJ Code
SC-59A
Weight (g)
0.011
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