Chenmko HSM22PT High efficiency silicon rectifier Datasheet

HSM21PT
CHENMKO ENTERPRISE CO.,LTD
THRU
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 2.0 Amperes
HSM28PT
FEATURES
*
*
*
*
*
For surface mounted applications
Low forward voltage, high current capability
Low leakage current
Metallurgically bonded construction
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260oC/10 seconds at terminals
SMA
0.110(2.80)
0.065(1.65)
0.094(2.40)
0.049(1.25)
(1)
0.181(4.60)
(2)
0.165(4.20)
MECHANICAL DATA
Case: JEDEC SMA molded plastic
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Indicated by cathode band
Weight: 0.002 ounces, 0.064 gram
0.012(0.310)
0.006(0.150)
0.090(2.30)
0.075(1.90)
0.060(1.52)
0.008 (0.203)(max)
0.030(0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.212(5.40)
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
0.189(4.80)
SMA
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
HSM21PT HSM22PT HSM23PT HSM24PT HSM25PT HSM26PT HSM27PT HSM28PT
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
560
700
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
800
1000
Volts
o
Maximum Average Forward Rectified Current TL = 100 C
IO
2.0
Amps
IFSM
60
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
CJ
30
TJ, TSTG
20
pF
o
-65 to +150
C
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Maximum Instantaneous Forward Voltage at 2.0 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage at TA = 25oC
Maximum Full Load Reverse Current Average,
Full Cycle at TA = 55oC
Maximum Reverse Recovery Time (Note 2)
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts
2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A
VF
HSM21PT HSM22PT HSM23PT HSM24PTHSM25PT HSM26PTHSM27PT HSM28PT
1.0
1.3
1.5
1.7
UNITS
Volts
5.0
uAmps
100
uAmps
IR
trr
50
70
nSec
2002-5
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
0
PULSE
GENERATOR
(NOTE 2)
25 Vdc
(approx)
(-)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
SET TIME BASE FOR
10/20 nS/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
2.0
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( OC )
TJ =100oC
1.0
TJ =25oC
.1
HS
8P
T
M2
6P
M2
7P
T~
HS
M2
HS
M2
HS
SM
~H
~H
4PT
1PT
M2
T
25P
T
23P
SM
Pulse Width = 300uS
1% Duty Cycle
1.0
HS
TJ =125oC
10
T
10
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
0.1
TJ =25oC
.01
.001
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
1.8
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
70
200
60
JUNCTION CAPACITANCE, ( pF )
PEAK FORWARD SURGE CURRENT, ( A )
AVERAGE FORWARD CURRENT, ( A )
RATING CHARACTERISTIC CURVES ( HSM21PT THRU HSM28PT )
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
0
100
60
HSM2
1PT~
40
HSM2
6PT~H
HSM2
20
5PT
SM28P
T
10
6
4
TJ =25oC
2
1
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
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