ETC2 HSMBJSAC10 Transient voltage suppressor Datasheet

HSMBJSAC5.0 thru HSMBJSAC75
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 75 Volts
Peak Pulse Power
500 Watts
Features
CASE: SMB (DO214AA)






Breakdown Voltages (VBR) from 5.0 to 75V
500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Low capacitance
Fast Response Time
Excellent clamping capability
High temperature soldering guaranteed: 265℃ /10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
效
无
Application

Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICS, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
印
打
Mechanical Data




Dimensions in inches and (millimeters)

Case: Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals: Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking: Body marked with part number
Polarity: Cathode indicated by band
Weight: 0.093g(Approximately)
Maximum Ratings and Electrical Characteristics @
Symbol
Value
Unit
500
W
SEE TABLE1
A
Steady state power dissipation at TL=75℃ ,Lead lengths 0.375”(10mm)
2.5
W
Maximum instantaneous forward voltage at 30A
3.5
V
-65 to +150
℃
Conditions
PPPM
Peak pulse power capability with a 10/1000μs
IPPM
Peak pulse current with a 10/1000μs
PM(AV)
VF
TJ, TSTG
25OC unless otherwise specified
Operating and Storage Temperature
Document Number: HSMBJSAC5.0 thru HSMBJSAC75
Feb.29, 2012
1
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HSMBJSAC5.0 thru HSMBJSAC75
Electrical Characteristics @ 25°C (Unless Otherwise Noted) TABLE1
Microsemi
Part
Number
HSMBJSAC5.0
HSMBJSAC6.0
HSMBJSAC7.0
HSMBJSAC8.0
HSMBJSAC8.5
HSMBJSAC10
HSMBJSAC12
HSMBJSAC15
HSMBJSAC18
HSMBJSAC22
HSMBJSAC26
HSMBJSAC36
HSMBJSAC45
HSMBJSAC50
HSMBJSAC75
Reverse Breakdown
Stand
Voltage
Off
VBR @ IBR
Voltage
1.0mA
(Note1)
Maximum
Standby
current
ID @ VWM
Maximum
Peak
Pulse
Current
Maximum
Clamping
Voltage
VC @
IPP=5.0A
(Note2)
Maximum
Capacitance
@ 0 Volts
pF
Working
Inverse
Blocking
Voltage
Inverse
Blocking
Leakage
Current
@ VWIB
Peak
Inverse
Blocking
Voltage
VWM(V)
VBR(V)
ID(µA)
IPP (A)
VC(V)
C (pF)
VWIB(V)
IIB(μA)
VPIB(V)
5.0
6.0
7.0
8.0
7.5
10.0
12.0
15.0
18.0
22.0
26.0
36.0
45.0
50.0
75.0
7.60
7.90
8.33
8.89
9.44
11.1
13.3
16.7
20.0
24.4
28.9
40.0
50.0
55.5
83.3
300
300
300
100
50
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
44.0
41.0
38.0
36.0
34.0
29.0
25.0
20.0
15.0
14.0
11.1
8.6
6.8
5.8
4.1
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
60.0
77.0
88.0
121.0
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
75
75
75
75
75
75
75
75
75
75
75
75
150
150
150
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
100
100
100
100
100
100
100
100
100
100
100
100
200
200
200
效
无
印
Note1: A transient voltage suppressor is normally selected according to voltage (VWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
Note2: Test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
PPP - Peak Pulse Power (kW)
100
打
10
tW
IPP
tW
Half Sine
tW=0.71p
tp
Square
Wave
tW
Current Waveforms
1.0
0.1
0.1
1.0
10
102
tw-Pulse Width (µs)
150
Impulse
Exponential
Decay
1.0
IPP
0.5
103
104
Fig. 1 Peak Pulse Power vs. Pulse Time
Document Number: HSMBJSAC5.0 thru HSMBJSAC75
Feb.29, 2012
2
IPP - Peak Pulse Current - % IPP
Characteristic Curve
tr=10µs
Peak Value IPP
100
Half Value IPP
2
10/1000µs Waveform
as defined by R.E.A.
50
0
0
1.0
2.0
3.0
t-Time (ms)
Fig.2 Pulse Waveform for Exponential Surge
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HSMBJSAC5.0 thru HSMBJSAC75
PPP-Peak Pulse Power or continuous
Average Power in Percent of 25 ℃ (%)
100
80
Peak Pulse Power
(Single Pulse).
60
40
20
Average
Power
0
0
50
100
150
Lead or Ambient Temperature (℃)
200
效
无
印
Fig.3 Derating Curve
Schematic Applications
The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an
additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in
Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging
the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier
diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping
voltage VC. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional
configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4
+
TVS
打
DIODE
Fig.4 TVS with internal
Low Capacitance Diode
IN
Fig.5 Optional Unidirectional
configuration (TVS and
separate rectifier diode
in parallel)
Document Number: HSMBJSAC5.0 thru HSMBJSAC75
Feb.29, 2012
3
OUT
+
Fig.6 Optional Bidirectional
configuration (two TVS and
devices in anti-parallel)
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