AVAGO HSSR-711E 90 v/1.0 ohm, hermetically sealed, power mosfet optocoupler Datasheet

HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E
5962-93140
90 V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler
Data Sheet
Description
Features
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are single channel power MOSFET optocouplers, constructed in eight-pin, hermetic, dual-in-line,
ceramic packages. The devices operate exactly like a solidstate relay.
 Dual Marked with Device Part Number and DLA
Standard Microcircuit Drawing
The products are capable of operation and storage over
the full military temperature range and may be purchased as a standard product (HSSR-7110), with full MILPRF-38534 Class H testing (HSSR-7111 and HSSR- 7112),
with MIL-PRF-38534 Class E testing (Class K with exceptions) (HSSR-711E) or from the DLA Standard Microcircuit
Drawing (SMD) 5962-93140. Details of the Class E program
may be found on page 11 of this datasheet.
IO
IO
8
1 NC
+
IF
IF
7
- 3
6
VF
VO
4 NC
5
 QML-38534
 MIL-PRF-38534 Class H
 Modified Space Level Processing Available (Class E)
 Hermetically Sealed 8-Pin Dual In-Line Package
 Small Size and Weight
 Connection B1.6 A, 0.25 Ω
CONNECTION B
DC CONNECTION
+ 2
 Manufactured and Tested on a MIL-PRF-38534Certified
Line
 Connection A0.8 A, 1.0 Ω
CONNECTION A
AC/DC CONNECTION
8
 Compact Solid-State Bidirectional Switch
 Performance Guaranteed over -55°C to 125°C
Functional Diagrams
1 NC
 ac/dc Signal &Power Switching
-
+ 2
7
- 3
6
VF
4 NC
5
+
VO
-
 1500 Vdc Withstand Test Voltage
 High Transient Immunity
 5 Amp Output Surge Current
Applications
 Military and Space
TRUTH TABLE
INPUT
OUTPUT
H
CLOSED
L
OPEN
 High Reliability Systems
 Standard 28 Vdc and 48 Vdc Load Driver
 Standard 24 Vac Load Driver
 Aircraft Controls
 ac/dc Electromechanical and Solid State Relay
Replacement
 I/O Modules
 Harsh Industrial Environments
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
All devices are manufactured and tested on a MILPRF-38534 certified line and are included in the DLA Qualified Manufacturers List, QML-38534 for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode
optically coupled to a photovoltaic diode stack which
drives two discrete power MOSFETs. The device operates as a solid-state replacement for single-pole, normally
open, (1 Form A) relay used for general purpose switching
of signals and loads in high reliability applications.
The devices feature logic level input control and very low
output on-resistance, making them suitable for both ac
and dc loads. Connection A, as shown in the Functional
Diagram, allows the device to switch either ac or dc loads.
Connection B, with the polarity and pin configuration as
shown, allows the device to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two.
The devices are convenient replacements for mechanical
and solid state relays where high component reliability
with standard footprint lead configuration is desirable.
Devices may be purchased with a variety of lead bend
and plating options. See Selection Guide table for details.
Standard Microcircuit Drawing (SMD) parts are available
for each package and lead style.
The HSSR-7110, HSSR-7111, HSSR-7112, HSSR-711E and
SMD 5962-93140 are designed to switch loads on 28 Vdc
power systems. They meet 80 V surge and ± 600 V spike
requirements.
Selection Guide – Lead Configuration Options
Avago Technologies’s Part Number and Options
Commercial
HSSR-7110
MIL-PRF-38534 Class H
HSSR-7111
HSSR-7112
Gold Plate
Gold Plate
Gold Plate
Solder Dipped*
Option #200
Option -200
Option -200
Butt Joint/Gold Plate
Option #100
Option -100
Gull Wing/Soldered*
Option #300
Option -300
Crew Cut/Gold Plate
Option #600
MIL-PRF-38534 Class E
Standard Lead Finish
HSSR-711E
SMD Part Number
Prescript for all below
5962- 5962-
Gold Plate
9314001HPC
9314002HPC
9314001EPC
Solder Dipped*
9314001HPA
9314002HPA
9314001EPA
Butt Joint/Gold Plate
9314001HYC
9314002HYC
Butt Joint/Soldered*
9314001HYA
9314002HYA
Gull Wing/Soldered*
9314001HXA
9314002HXA
Crew Cut/Gold Plate
9314001HZC
Crew Cut/Soldered*
9314001HZA
* Solder Contains Lead
CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of loads so as not to exceed the
maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature.
2
Outline Drawing
Device Marking
8-pin DIP Through Hole
9.40 (0.370)
9.91 (0.390)
0.76 (0.030)
1.27 (0.050)
AVAGO
DESIGNATOR
AVAGO P/N
DLA SMD*
DLA SMD*
PIN ONE/
ESD IDENT
8.13 (0.320)
MAX.
7.16 (0.282 )
7.57 (0.298 )
3.81 (0.150 )
MIN.
COMPLIANCE INDICATOR, *
DATE CODE, SUFFIX
(IF NEEDED)
COUNTRY OF MFR.
AVAGO CAGE CODE*
* QUALIFIED PARTS ONLY
4.32 (0.170 )
MAX.
0.51 (0.020)
MIN.
A QYYWWZ
XXXXXX
XXXXXXX
XXX XXX
50434
Thermal Resistance
Maximum Output MOSFET Junction to Case – θJC =
15°C/W
0.20 (0.008 )
0.33 (0.013 )
ESD Classification
2.29 (0.090)
2.79 (0.110)
0.51 (0.020 )
MAX.
7.36 (0.290)
7.87 (0.310)
(MIL-STD-883, Method 3015) .......................... (
), Class 2
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Storage Temperature Range
TS
-65°
+150°
C
Operating Ambient Temperature
TA
-55°
+125°
C
Junction Temperature
TJ
+150°
C
Operating Case Temperature
TC
+145°
C
260° for 10 s
C
IF
20
mA
Peak Repetitive Input Current
(Pulse Width < 100 ms; duty cycle < 50%)
IFPK
40
mA
Peak Surge Input Current
(Pulse Width < 0.2 ms; duty cycle < 0.1%)
IFPK surge
100
mA
Reverse Input Voltage
VR
5
V
Average Output Current - Figure 2
Connection A
Connection B
IO
0.8
1.6
A
A
IOPK surge
5.0
10.0
A
A
90
90
V
V
800
mW
Lead Solder Temperature
(1.6 mm below seating plane)
Average Input Current
Single Shot Output Current - Figure 3
Connection A (Pulse width < 10 ms)
Connection B (Pulse width < 10 ms)
Output Voltage
Connection A
Connection B
Average Output Power Dissipation - Figure 4
3
VO
-90
0
Note
1
2
Recommended Operating Conditions
Parameter
Symbol
Min.
Max.
Units
Note
Input Current (on)
IF(ON)
5
20
mA
10
Input Current (on)
IF(ON)
10
20
mA
11
Input Voltage (off )
VF(OFF)
0
0.6
V
TA
-55
+125
°C
Operating Temperature
Hermetic Optocoupler Options
Note: Dimensions in millimeters (inches).
Option
Description
100
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly.
This option is available on commercial and hi-rel product.
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
1.14 (0.045)
1.40 (0.055)
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MAX.
7.36 (0.290)
7.87 (0.310)
200
Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product.
DLA Drawing part numbers contain provisions for lead finish.
300
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly.
This option is available on commercial and hi-rel product. This option has solder dipped leads.
4.57 (0.180)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
600
1.40 (0.055)
1.65 (0.065)
4.57 (0.180)
MAX.
5˚ MAX.
0.51 (0.020)
MAX.
0.20 (0.008)
0.33 (0.013)
9.65 (0.380)
9.91 (0.390)
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly.
This option is available on commercial and hi-rel product.
3.81 (0.150)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
Note: Solder contains lead.
4
0.20 (0.008)
0.33 (0.013)
1.02 (0.040)
TYP.
7.36 (0.290)
7.87 (0.310)
1.07 (0.042)
1.31 (0.052)
Electrical Specifications
TA =-55°C to +125°C, unless otherwise specified. See note 9.
Parameter
Output Withstand
Voltage
Output On-Resistance
Connection A
Sym.
Group A,
Sub-group
|VO(OFF)|
1, 2, 3
VF = 0.6 V, IO = 10 PA
R(ON)
1, 2, 3
IF = 10 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
Test Conditions
Min.
Typ.*
90
110
0.40
IF = 5 mA, IO = 800 mA,
(pulse duration ≤ 30 ms)
Output On-Resistance
Connection B
R(ON)
1, 2, 3
IF = 10 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
IO(OFF)
1, 2, 3
VF = 0.6 V, VO = 90 V
Input Forward
Voltage
VF
1, 2, 3
IF = 10 mA
Input Reverse
Breakdown Voltage
VR
1, 2, 3
Input-Output
Insulation
II-O
1
Turn On Time
tON
9, 10, 11
0.12
1.0
V
5
:
6, 7
0.25
IR = 100 PA
tOFF
9, 10, 11
Notes
3, 11
3, 10
:
6, 7
3, 11
3, 10
10-4
10
PA
8
1.24
1.7
V
9
IF = 5 mA
11
10
5.0
V
RH ≤ 65%, t = 5 s,
VI-O = 1500 Vdc, TA = 25°C
IF = 10 mA, VDD = 28 V,
IO = 800 mA
1.25
1.0
PA
6.0
ms
6.0
IF = 10 mA, VDD = 28 V,
IO = 800 mA
0.02
IF = 5 mA, VDD = 28 V,
IO = 800 mA
5
Fig.
0.25
IF = 5 mA, VDD = 28 V,
IO = 800 mA
Turn Off Time
1.0
Units
1.0
IF = 5 mA, IO = 1.6 A,
(pulse duration ≤ 30 ms)
Output Leakage
Current
Max.
0.25
ms
4, 5
1,
10, 11,
12, 13
11
1,
10, 14, 15
11
0.25
10
10
Output Transient
Rejection
dVo
dt
9
VPEAK = 50 V, CM = 1000 pF,
CL = 15 pF, RM ≥ 1 M:
1000
V/Ps
17
Input-Output
Transient Rejection
dVio
dt
9
VDD = 5 V, VI-O(PEAK) = 50 V,
RL = 20 k:, CL = 15 pF
500
V/Ps
18
Typical Characteristics
All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified.
Parameter
Symbol
Test Conditions
Typ.
Units
Fig.
Output Off-Capacitance
CO(OFF)
VO = 28 V, f = 1 MHz
145
pF
16
Output Offset Voltage
|VOS|
IF = 10 mA, IO = 0 mA
2
PV
19
IF = 10 mA
-1.4
mV/°C
'VF/'TA
Input Diode Temperature Coefficient
Notes
7
Input Capacitance
CIN
VF = 0 V, f = 1MHz
20
pF
8
Input-Output Capacitance
CI-O
VI-O = 0 V, f = 1 MHz
1.5
pF
4
Input-Output Resistance
RI-O
VI-O = 500 V, t = 60 s
1013
:
4
Turn On Time With Peaking
tON
IFPK = 100 mA, IFSS = 10 mA
VDD = 28 V, IO = 800 mA
0.22
ms
1
6
Notes:
1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the package
bottom.
2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as
shown in Figure 2.
3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (TC) are equal.
4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together.
5. This is a momentary withstand test, not an operating condition.
6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented.
7. VOS is a function of IF, and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature gradients).
8. Zero-bias capacitance measured between the LED anode and cathode.
9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD, Class H and Class E parts receive 100% testing at 25°C, 125°C and -55°C
(Subgroups 1 and 9, 2 and 10, 3 and 11 respectively).
10. Applies to HSSR-7112 and 5962-9314002Hxx devices only.
11. Applies to HSSR-7110, HSSR-7111, HSSR-711E, 5962-9314001Hxx and 5962-9314001Exx devices only.
HSSR-7110
V CC (+5V)
1
8
+ 2
VF
- 3
7
6
4
5
IF
R2
1200 Ω
R1
330 Ω
R3
C
15 μF
IN
1/4 54ACTOO
1/4 54ACTOO*
R1 = REQUIRED CURRENT LIMITING RESISTOR
FOR IF (ON) = 10 mA.
R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV;
IF (VCC-VOH ) < 600 mV, OMIT R2.
R3, C = OPTIONAL PEAKING CIRCUIT.
TYPICAL VALUES
* USE SECOND GATE IF IF (PK) > 50 mA
REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC
Figure 1. Recommended Input Circuit.
6
R3
(Ω)
330
100
33
IF (PK)
(mA)
10 (NO PK)
20
40
100
HSSR-7110
t ON (ms)
2.0
1.0
0.48
0.22
12
0.6
0.4
CONNECTION - A
IF 10 mA
QCA = 40˚ C/W
QCA = 80˚ C/W
0.2
0
-55
-25
5
35
65
95
125
11
10
9
CONNECTION-B
8
7
6
5
CONNECTION-A
4
3
155
10
200
Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature.
NORMALIZED TYPICAL OUTPUT
WITHSTAND VOLTAGE
NORMALIZED TYPICAL
OUTPUT RESISTANCE
1.02
1.00
0.98
0.96
-25
5
35
65
1.4
1.2
1.0
95
0.6
-55
125
Figure 5. Normalized Typical Output Withstand
Voltage vs. Temperature.
35
65
95
125
-9
-11
35
65
95
T A - TEMPERATURE - ˚C
Figure 8. Typical Output Leakage Current vs.
Temperature.
125
10 -2
10 -3
T A = 125˚C
10
-25
5
35
65
95
125
155
CONNECTION - A
0.6 IO 10 mA
IO (PULSE DURATION
30 ms)
0.4
0.2
0
T A = 125˚C
-0.2
T A = 25˚C
-0.4
T A = -55˚C
-4
T A = 25˚C
10 -5
T A = -55˚C
10 -6
0.4
0.6
0.8
1.0
1.2
1.4
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
V O - OUTPUT VOLTAGE - V
Figure 6. Normalized Typical Output Resistance
vs. Temperature.
IF - INPUT FORWARD CURRENT - A
IO(OFF) - OUTPUT LEAKAGE CURRENT - A
5
10 -1
CONNECTION A
V F = 0.6 V
V O = 90 V
10 -10
7
-25
T A - AMBIENT TEMPERATURE - ˚C
10 -7
20
0
-55
-0.6
T A - AMBIENT TEMPERATURE - ˚C
10
CONNECTION - A
IF 10 mA
QCA = 40˚ C/W
QCA = 80˚ C/W
0.2
Figure 4. Output Power Rating vs. Ambient
Temperature.
0.8
0.94
-55
0.4
T A - AMBIENT TEMPERATURE - ˚C
CONNECTION - A
IF 10 mA
IO = 800 mA
(PULSE DURATION 30 ms)
1.6
1.04
10
1000
0.6
0.8
1.8
V F = 0.6 V
IO = 10 μA
1.06
10 -8
800
Figure 3. Single Shot (non-repetitive) Output
Current vs. Pulse Duration.
1.10
0.92
600
400
0.8
PULSE DURATION - ms
T A - AMBIENT TEMPERATURE - ˚C
1.08
1.0
10 mA
IO - OUTPUT CURRENT - A
IO - OUTPUT CURRENT - A
0.8
IF
P O - OUTPUT POWER DISSIPATION - W
IOPK SURGE - OUTPUT CURRENT - A
1.0
1.6
V F - INPUT FORWARD VOLTAGE - V
Figure 9. Typical Input Forward Current vs. Input
Forward Voltage.
Figure 7. Typical On State Output I-V Characteristics.
V DD
50%
PULSE GEN.
Z O = 50
t f = t r = 5 ns
50%
IF
P.W. = 15 ms
IF
VO
RL
HSSR-7110
1
8
+ 2
VF
- 3
7
6
4
5
90%
VO
MONITOR NODE
C L = 25 pF
(C L INCLUDES PROBE AND
FIXTURE CAPACITANCE)
IF
MONITOR
10%
R (MONITOR)
200
t ON
t OFF
Figure 10. Switching Test Circuit for tON, tOFF.
3.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-55
-25
5
35
65
95
2.2
1.0
0.6
10
15
14.0
13.8
13.6
35
25
20
15
10
13.2
5
5
35
65
0.6
0.4
0
95
125
T A -TEMPERATURE - ˚C
Figure 14. Typical Turn Off Time vs. Temperature.
5
10
15
10
20
30 40
50
60
70
80
90
V DD - VOLTAGE - V
30
13.4
-25
0.8
0
Figure 13. Typical Turn On Time vs. Voltage.
C O(OFF) - OUTPUT OFF CAPACITANCE - pF
14.2
-55
1.0
20
CONNECTION A
V DD = 28 V
IO = 800 mA
T A = 25˚C
40
T OFF - TURN OFF TIME - μs
T OFF - TURN OFF TIME - μs
5
45
CONNECTION A
IF = 10 mA
V DD = 28 V
IO = 800 mA
14.4
1.2
0.2
Figure 12. Typical Turn On Time vs. Input Current.
15.0
14.6
1.4
IF - INPUT CURRENT - mA
Figure 11. Typical Turn On Time vs. Temperature.
8
1.6
1.4
T A - TEMPERATURE - ˚C
14.8
CONNECTION - A
IF = 10 mA
IO = 800 mA
T A = 25˚C
1.8
1.8
0.2
125
2.0
CONNECTION A
V DD = 28 V
IO = 800 mA
T A = 25˚C
2.6
T ON - TURN ON TIME - ms
T ON - TURN ON TIME - ms
2.2
CONNECTION A
IF = 10 mA
V DD = 28 V
IO = 800 mA
T ON - TURN ON TIME - ms
2.6
2.4
GND
GND
20
IF - INPUT CURRENT - mA
Figure 15. Typical Turn Off Time vs. Input Current.
440
CONNECTION A
f = 1 MHz
T A = 25˚C
400
360
320
280
240
200
160
120
0
20
25
5
10
15
V O(OFF) - OUTPUT VOLTAGE - V
Figure 16. Typical Output Off Capacitance vs.
Output Voltage.
30
HSSR-7110
1
8
+ 2
VF
- 3
7
6
4
5
VM
MONITOR
NODE
IF
INPUT OPEN
CM
RM
V PEAK
+
PULSE
GENERATOR
C M INCLUDES PROBE AND FIXTURE CAPACITANCE
R M INCLUDES PROBE AND FIXTURE RESISTANCE
90%
90%
V PEAK
10%
10%
tr
tf
V M (MAX) 5 V
(0.8) V (PEAK)
dVO
=
tr
dt
OR
(0.8) V (PEAK)
tf
OVERSHOOT ON VPEAK IS TO BE 10%.
Figure 17. Output Transient Rejection Test Circuit.
V DD
HSSR-7110
IF
S1
A
8
+ 2
VF
- 3
7
CL
6
(C L INCLUDES PROBE PLUS
FIXTURE CAPACITANCE )
4
5
V IN
V I-O
+
PULSE
GENERATOR
90%
V I-O(PEAK)
10%
10%
tf
tr
V O(OFF)
S 1 AT A (V F = 0 V)
V O(OFF) (min) 3.25 V
VO(ON) (max) 0.8
V O(ON)
S 1 AT B (I F = 10 mA)11 OR (IF = 5 mA)10
(0.8) V I-O(PEAK)
dV I-O (0.8) V I-O(PEAK)
=
OR
tf
dt
tr
OVERSHOOT ON VI-O(PEAK) IS TO BE 10%
Figure 18. Input-Output Transient Rejection Test Circuit.
9
VO
1
B
90%
RL
ISOTHERMAL CHAMBER
T je
T jd
T jf1
T jf2
HSSR-7110
104
IF
+2
7
- 3
6
4
DIGITAL
NANOVOLTMETER
V OS
TA
1
8
2
7
3
6
R OUT
1.0
R IN
200
4
15
CA
5 -
HSSR-7110
5.5 V
15
TC
Figure 19. Voltage Offset Test Setup.
V IN
15
8 +
1
5
V O (SEE NOTE)
T je = LED JUNCTION TEMPERATURE
T jf1 = FET 1 JUNCTION TEMPERATURE
T jf2 = FET 2 JUNCTION TEMPERATURE
T jd = FET DRIVER JUNCTION TEMPERATURE
T C = CASE TEMPERATURE (MEASURED AT CENTER
OF PACKAGE BOTTOM)
T A = AMBIENT TEMPERATURE (MEASURED 6" AWAY
FROM THE PACKAGE)
CA = CASE-TO-AMBIENT THERMAL RESISTANCE
ALL THERMAL RESISTANCE VALUES ARE IN ˚C/W
R OUT
Figure 21. Thermal Model.
1.0
NOTE:
IN ORDER TO DETERMINE V OUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST
BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING CA , DETERMINE THE
CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE
DERATING REQUIREMENTS AS SHOWN.
Figure 20. Burn-In Circuit.
Applications Information
On-Resistance and Rating Curves
Thermal Model
The output on-resistance, RON, specified in this data sheet,
is the resistance measured across the output contact
when a pulsed current signal (IO = 800 mA) is applied to
the output pins. The use of a pulsed signal (≤ 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance,
RSS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal
is applied to the output pins for a duration sufficient to
reach thermal equilibrium. RSS includes the effects of the
temperature rise of each element in the thermal model.
Rating curves are shown in Figures 2 and 4. Figure 2 specifies the maximum average output current allowable for a
given ambient temperature. Figure 4 specifies the output
power dissipation allowable for a given ambient temperature. Above 55°C (for θCA = 80°C/W) and 107°C (for θCA =
40°C/W/W), the maximum allowable output current and
power dissipation are related by the expression RSS =
PO(max)/ (IO(max))2 from which RSS can be calculated. Staying within the safe area assures that the steady-state junction temperatures remain less than 150°C. As an example,
for TA = 95°C and θCA = 80°C/W , Figure 2 shows that the
output current should be limited to less than 610 mA. A
check with Figure 4 shows that the output power dissipation at TA = 95°C and IO = 610 mA, will be limited to less
than 0.35 W. This yields an RSS of 0.94 Ω.
The steady state thermal model for the HSSR-7110 is
shown in Figure 21. The thermal resistance values given
in this model can be used to calculate the temperatures
at each node for a given operating condition. The thermal
resistances between the LED and other internal nodes
are very large in comparison with the other terms and
are omitted for simplicity. The components do, however,
interact indirectly through θCA, the case-to-ambient
thermal resistance. All heat generated flows through θCA,
which raises the case temperature TC accordingly. The value of θCA depends on the conditions of the board design
and is, therefore, determined by the designer.
The maximum value for each output MOSFET junctionto-case thermal resistance is specified as 15°C/W . The
thermal resistance from FET driver junction-to-case is also
15°C/W/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs.
10
Design Considerations for Replacement of ElectroMechanical Relays
The HSSR-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings.
The following design issues need to be considered in the
replacement circuit.
Input Circuit: The drive circuit of the electro-mechanical
relay coil needs to be modified so that the average forward current driving the LED of the HSSR- 7110 does not
exceed 20 mA. A nominal forward drive current of 10 mA
is recommended. A recommended drive circuit with 5 volt
VCC and CMOS logic gates is shown in Figure 1. If higher
VCC voltages are used, adjust the current limiting resistor
to a nominal LED forward current of 10 mA. One important consideration to note is that when the LED is turned
off, no more than 0.6 volt forward bias should be applied
across the LED. Even a few microamps of current may be
sufficient to turn on the HSSR- 7110, although it may take
a considerable time. The drive circuit should maintain at
least 5 mA of LED current during the ON condition. If the
LED forward current is less than the 5 mA level, it will cause
the HSSR-7110 to turn on with a longer delay. In addition,
the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation
guidelines and affect the reliability of the device.
Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output on-resistance of solid state relays. The previous section, “On- Resistance and Rating Curves” describes the issues that need
to be considered. In addition, for strictly dc applications
the designer has an advantage using Connection B which
has twice the output current rating as Connection A. Furthermore, for dc-only applications, with Connection B the
on-resistance is considerably less when compared to Connection A.
Output over-voltage protection is yet another important
design consideration when replacing electro-mechanical
relays with the HSSR-7110. The output power MOSFETs
can be protected using Metal oxide varistors (MOVs) or
TransZorbs against voltage surges that exceed the 90 volt
output withstand voltage rating. Examples of sources of
voltage surges are inductive load kickbacks, lightning
strikes, and electro-static voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1047.
For product information and a complete list of distributors, please go to our web site:
References:
1. Application Note 1047, “Low On-Resistance Solid State
Relays for High Reliability Applications.”
2. Reliability Data for HSSR-7111, HSSR-7112, and
HSSR-711E.
MOV is a registered trademark of GE/RCA Solid State.
TransZorb is a registered trademark of General Semiconductor.
MIL-PRF-38534 Class H, Class E and DLA SMD Test Program
Class H:
Avago Technologies’ s Hi-Rel Optocouplers are in compliance with MIL-PRF-38534 Class H. Class H devices are also
in compliance with DLA drawing 5962-93140.
Testing consists of 100% screening and quality conformance inspection to MIL-PRF-38534.
Class E:
Class E devices are in compliance with DLA drawing 59629314001Exx. Avago Technologies has defined the Class E
device on this drawing to be based on the Class K requirements of MIL-PRF-38534 with exceptions. The exceptions
are as follows:
1. Nondestructive Bond Pull, Test method 2023 of MILSTD-883 in device screening is not required.
2. Particle Impact Noise Detection (PIND), Test method
2020 of MIL-STD-883 in device screening and group C
testing is not required.
3. Die Shear Strength, Test method 2019 of MIL-STD-883
in group B testing is not required.
4. Internal Water Vapor Content, Test method 1018 of MILSTD-883 in group C testing is not required.
5. Scanning Electron Microscope (SEM) inspections, Test
method 2018 of MIL-STD-883 in element evaluation is
not required.
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Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-1944EN
AV02-3835EN - October 2, 2012
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