Teccor HT-5762 Bilateral trigger diac Datasheet

Thyristor Product Catalog
8
DO-35
DO-214AA
Bilateral Trigger Diacs
HT and ST Series
8
General Description
Teccor’s "HT" and "ST" Series of bilateral trigger diacs offers a
range of voltage characteristics from 27 to 70 volts.
The diac semiconductor is a full-wave or bidirectional thyristor. It
is triggered from a blocking-to-conduction state for either polarity
of applied voltage whenever the amplitude of applied voltage
exceeds the breakover voltage rating of the diac.
The Teccor line of diacs features glass-passivated junctions to
ensure long term device reliability and parameter stability.
Teccor’s glass offers a rugged, reliable barrier against junction
contamination.
The diac specifications listed in this data sheet are for standard
products. Special parameter selections such as close tolerance
voltage symmetry are available. Please consult the factory for
more information for custom design applications. Suffix RP
signifies tape-and-reel packing. Example: HT32RP.
Features
•
•
"ST" Series
•
•
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Epoxy SMT package
High temperature solder bonded die attachment
"HT" Series
•
•
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Glass passivated junctions
Wide voltage range selections
DO-35 trigger package
Pre-tinned leads
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8-1
Bilateral Trigger Diacs
Thyristor Product Catalog
ELECTRICAL CHARACTERISTICS TC = 25°C
Part No.
∆VBO
Breakover Voltage
Symmetry
VBO
Breakover Voltage
(Forward and
Reverse)
∆VBO =
[ | +VBO | - | - VBO | ]
VBB
Dynamic
Breakback
Voltage
(3)
| ∆V± |
IBO
Peak Breakover
Current
at
Breakover
Voltage
ITRM
Peak Pulse
Current
for 10µs
120 PPS
TA ≤ 40°C
Volts
Volts
µAmps
Amps
Volts
DO-214AA
DO-35
HT-32
MIN
27
MAX
37
MAX
3 (1)
MIN
10 (2)
MAX
25
MAX
2.0
HT-32A / HT-5761
28
36
2 (1)
7 at 10mA (4)
25
2.0
HT-32B / HT-5761A
30
34
2 (1)
7 at 10mA (4)
25
2.0
HT-34B
HT-35
ST-34B
ST-35
32
30
36
40
2 (1)
3 (1)
10 (2)
10 (2)
25
25
2.0
2.0
HT-36A / HT-5762
HT-36B
ST-36A
ST-36B
32
34
40
38
2 (1)
2 (1)
7 at 10mA (4)
10 (2)
25
25
2.0
2.0
HT-40
HT-60
ST-40
35
56
45
70
3 (1)
4
10 (2)
20 (2)
25
25
2.0
1.5
General Notes
•
Lead solder temperature is +230°C max. for 10 seconds max.;
≥ 1/16" (1.59mm) from case.
•
See “Package Dimensions” section of this catalog.
LOAD UP TO
1500 WATTS
3.3 KΩ
Electrical Specification Notes
(1)
Breakover Voltage symmetry as close as 1.0V is available from
factory on these products.
(2)
See Figures 8.4 and 8.5 for Test Circuit and waveforms.
(3)
Typical switching time is 900 nano-seconds measured at IPK
(see Figure 8.4) across a 20Ω resistor (see Figure 8.5). Switching
time defined as rise time of IPK between the 10% to 90% points.
(4)
MT2
TRIAC
Q2015L5
200 KΩ
G
120 VAC
60 Hz
MT1
0.1 µF
100 V
See Figure 8.7.
HT-35
BILATERAL
TRIGGER
DIAC
Bilateral Trigger DIAC Specifications
•
Maximum Ratings, Absolute-Maximum Values
Maximum Trigger Firing Capacitance: 0.1 µF
Device Dissipation (at TA = -40° to +40°C): 250mW for
DO-35 and 300mW for DO-214AA
Derate Above +40°C: 3.6mW/°C for DO-35 and 3mW/°C for
DO-214AA
•
Temperature Ranges
Storage: -40°C to +125°C
Operating (Junction): -40°C to +125°C
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8-2
Figure 8.1
Typical Diac-Triac Full-Wave Phase Control Circuit using
Lower Voltage Diacs
HT and ST Series Thermal Resistance
Junction to Lead - RθJL: °C/W
Junction to Ambient [RθJA]: °C/W
(based on maximum lead temperature of 90°C for
DO-214AA and 85°C for DO-35 devices)
Y
S
DO-35
DO-214AA
100 [278] °C/W
65 [200] °C/W
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Thyristor Product Catalog
Bilateral Trigger Diacs
10
5.0
Repetitive Peak On-State Current (ITRM) - Amps
3.0
2.0
1.0
PULSE REPETITION RATE =120 pps
TA = 40˚C
0.5
0.3
ST or HT- 32x, -34x, -35, -36x, -40
HT-5761, -5761A, -5762
0.2
0.1
HT-60
0.05
0.03
0.02
SAFE OPERATING
AREA
.01
.005
.003
.002
.001
1
2
4
6
10
20
40 60 100
200
400 600 1000
2000
4000
10000
Base Pulse Duration - Microseconds
Figure 8.2
Repetitive Peak On-State Current vs Pulse Duration
Percentage of VBO Change - %
+8
V
ST or HT- 32x, 34x, 35, 36x, 40
HT-5761, 5761A, 5762
+6
C
+V
BO
∆V+
+4
HT-60
t
0
+2
0
∆V-VBO
-2
IL
-4
+IPK
-6
0
t
0
-40
-20
0
-IPK
+20 +40 +60 +80 +100 +120 +140
Junction Temperature (TJ) - ˚C
Figure 8.3
Normalized VBO Change vs Junction Temperature
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Typical pulse base width is 10µSec.
Figure 8.4
Test Circuit Waveforms (See Figure 8.5.)
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8-3
Bilateral Trigger Diacs
Thyristor Product Catalog
Current
*
47 kΩ
10mA
V
100 kΩ
D.U.T.
Breakover
Current
IBO
RL
CT
O.1 µF
VC
-VBO
IL
120V RMS
60 Hz
Voltage
20Ω
1%
+VBO
Breakover
Voltage
VBO
*Adjust for one firing in each half cycle. D.U.T. = Diac
Figure 8.5
Circuit Used to Measure Diac Characteristics
(See Figure 8.4.)
Figure 8.7
V-I Characteristics
Peak Output Current (IPK) - mA
300
250
200
Per Figure 8.5 with
RL of 20Ω
100
L
CA
PI
TY
(35
V
DE
)
CE
VI
150
50
0
.01 .02 .03 .04 .05 .06 .07 .08 .09 .10
Triggering Capacitance (CT) - µF
Figure 8.6
Peak Output Current vs Triggering Capacitance
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8-4
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