HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100 HUR60120 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Maximum Ratings Unit IFRMS IFAVM TC=90oC; rectangular, d=0.5 70 60 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 500 A 23 mJ 1.5 A EAS IAR o TVJ=25 C; non-repetitive; IAS=14.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight typical o C 230 W 0.8...1.2 Nm 6 g HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 650 2.5 uA mA VF IF=60A; TVJ=150oC TVJ=25oC 1.74 2.66 V RthJC RthCH trr IRM 0.65 0.25 IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC 40 o VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C 7 K/W ns 14.3 A FEATURES APPLICATIONS ADVANTAGES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 100 10 A C 80 Qr IF TVJ=150°C TVJ=100°C 60 100 TVJ= 100°C VR = 600V 8 80 IRM IF= 120A IF= 60A IF= 30A 6 TVJ= 25°C 60 40 4 40 20 2 20 0 0 1 2 VF V 0 100 3 Fig. 1 Forward current IF versus VF 2.0 TVJ= 100°C VR = 600V A IF= 120A IF= 60A IF= 30A 0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 280 120 TVJ= 100°C VR = 600V ns 1.2 TVJ= 100°C IF = 60A V Kf 240 IRM tfr tfr 80 IF= 120A IF= 60A IF= 30A 1.0 200 0.5 us VFR trr 1.5 0.8 VFR 40 0.4 Qr 0.0 160 0 40 80 120 °C 160 0 0 TVJ 200 400 600 800 1000 A/us 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 1 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i ZthJC 1 2 3 0.1 0.01 0.0001 0 0.001 0.01 0.1 s 1 t Fig. 7 Transient thermal resistance junction to case 10 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.038