InSb Hall Element HW-305B Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. •High-sensitivity Hall element. •SIP package, can be surface mounted. •Shipped in bulk (500pcs per pack). Note : It is requested to read and accept "IMPORTANT NOTICE". •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range Tstg. –40 to +125 ˚C Const. Current Drive •Classification of Output Hall Voltage (VH) VH [ mV ] Rank Conditions •Electrical Characteristics(Ta=25˚C) Item Symbol Output Hall Voltage VH Input Resistance Rin Output Resistance Offset Voltage Conditions Min. Const. Voltage Drive Typ. Max. 168 320 B=0mT, Ic=0.1mA 240 550 Rout B=0mT, Ic=0.1mA 240 550 Vos B=0mT, Vc=IV –7 +7 B=50mT, Vc=IV C 168 to 204 D 196 to 236 E 228 to 274 F 266 to 320 Unit mV B=50mT, Vc=IV Constant Voltage Drive Note : When ordering, specify 3-rank or wider range(e·g·,BCD). •Input Current Derating Curve mV Input Resistance Temp. Coefficient of Rin VH B=50mT, Ic=5mA –1.8 %/˚C Rin B=0mT, Ic=0.1mA –1.8 %/˚C Dielectric Strength 100V D.C Input Current(mA) 20 Temp. Coefficient of VH M 1.0 Rin : 240 to 550 10 Notes : 1. VH = VHM – Vos (VHM:meter indication) 1 3) – VH (T2) X 100 2. VH = VH (T1) X VH (T (T3 – T2) 1 3) – Rin (T2) X 100 3. Rin = Rin (T1) X Rin (T (T – T ) 3 0 – 40 2 T1 = 20˚C, T2 = 0˚C, T3 = 40˚C 0.5 0.3 0 20 40 60 80 100 120 Ambient Temperature.(˚C) •Dimensional Drawing (mm) 1.5±0.1 0.6 – 20 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 2.9±0.1 1.8 1.45 •Input Voltage Derating Curve 5.4±0.1 Input Voltage(V) 2.5 0.3 4.9 0.8 0.9 0.8 5˚ 3˚ 2.0 Rin : 240 to 550 1.0 N 5˚ d0.7 3˚ 0.05 0.1 d1.2 0 – 40 3˚ 0 to 0.1 5˚ 0.75 Pinning Input 1(±) 3 Output 2(±) 4 – 20 0 20 40 60 80 100 120 Ambient Temperature.(˚C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope. (±) 4.0 Input Resistance 2.0 (±) 4 3 2 1 0.6 29 HW-305B a •Characteristic Curves Rin-T VH-B 2000 600.0 Ic const Vc const 500.0 1600 Output Voltage:VH(mV) Input Resistance:Rin( ) 1800 1400 1200 1000 800 600 400 Ic = 5 (mA) Vc = 1 (V) Ta = 25 (˚C) 400.0 Ic 300.0 c Vin 200.0 100.0 200 0 -50 0 50 100 0.0 0 150 10 20 Ambient Temperature(˚C) VH-T Ic 1250 Output Voltage:VH(mV) Output Voltage:VH(mV) Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 1500 1000 750 500 Vin Ic const Vc const 1000 Ic B = 50 (mT) Ta = 25 (˚C) 800 f 600 Vin 400 200 0 –50 0 50 100 0 0.0 150 5 10 15 20 Ic:(mA) 0.5 1.0 1.5 2.0 Vc:(V) Ic (mA) Input Current Vc (V) Input Voltage Ambient Temperature(˚C) VOS-Vc, VOS-Ic 40 20 Ic const Vc const 30 Ic = 5 (mA) Vc = 1 (V) B = 0 ([mT) Ic Ic const Vc const 18 Offset Voltage:Vos(mV) Offset Voltage:Vos(mV) 50 1200 Ic const Vc const 1750 VOS-T 40 VH-Vc, VH-Ic 2000 250 30 Magnetic Flux Density B (mT) 20 10 16 i Ic B = 0 (mT) Ta = 25 (˚C) 14 12 10 8 Vin 6 4 Vin 2 0 –50 0 50 100 0 0.0 150 Ambient Temperature(˚C) 5 10 15 0.5 1.0 1.5 Ic (mA) Input Current Vc (V) Input Voltage *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V) 30 20 Ic:(mA) 2.0 Vc:(V)