ETC1 HW101A High-sensitivity insb hall element. Datasheet

InSb Hall Element
HW-101A
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•High-sensitivity InSb Hall element.
•Mini-mold SMT package (fits SOT143 land pattern).
•Shipped in packet-tape reel (3000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
Unit
Max. Input Current
Ic
20
mA
Operating Temp. Range
Topr.
–40 to +110
˚C
Storage Temp. Range
Tstg.
–40 to +125
˚C
Const. Current Drive
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
•Electrical Characteristics(Ta=25˚C)
Item
Symbol
Output Hall Voltage
VH
Input Resistance
Rin
Conditions
Min.
Const. Voltage Drive
B=50mT, Vc=IV
B=0mT, Ic=0.1mA
Typ.
Max.
122
370
240
550
Unit
mV
A
122
to
150
B
144
to
174
C
168
to
204
D
196
to
236
E
228
to
274
F
266
to
320
G
310
to
370
Conditions
B=50mT, Vc=IV
Constant Voltage Drive
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
Output Resistance
Rout
B=0mT, Ic=0.1mA
Offset Voltage
Vos
B=0mT, Vc=IV
240
550
–7
+7
•Input Current Derating Curve
mV
Input Resistance
Rin : 240 to 550
Temp. Coefficient of Rin
VH
B=50mT, Ic=5mA
–1.8
%/˚C
Rin
B=0mT, Ic=0.1mA
–1.8
%/˚C
Dielectric Strength
100V D.C
1.0
Input Current(mA)
20
Temp. Coefficient of VH
M
10
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
3) – VH (T2)
X 100
2. VH = VH (T1) X VH (T
(T3 – T2)
1
Rin (T3) – Rin (T2)
X 100
3. Rin = Rin (T1) X
(T – T )
3
0
– 40
2
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
•Dimensional Drawing (mm)
1.9
0.5
0.4
1
Input Voltage(V)
N
2.9±0.2
1.55±0.1
5˚
5˚
4
0.1
120
1.0
+0.2
–0.1
0.3
3˚
0.8
Pinning
0
– 40
Input
1(±)
3
Output
2(±)
4
– 20
0
20
40
60
80
Ambient Temperature.(˚C)
100
120
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
(±)
10˚
(±)
1.1
100
Input Resistance
Rin : 240 to 550
2.0
0 to 0.1
3
20
40
60
80
Ambient Temperature.(˚C)
•Input Voltage Derating Curve
0.35
2
0
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
2.9±0.1
0.5
– 20
11
HW-101A
a
•Characteristic Curves
Rin-T
VH-B
2000
600.0
Ic const
Vc const
500.0
1600
Output Voltage:VH(mV)
Input Resistance:Rin( )
1800
1400
1200
1000
800
600
400
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (C)
400.0
Ic
300.0
c
Vc
200.0
100.0
200
0
–50
0
50
100
Ambient Temperature(˚C)
0.0
0
150
VH-T
40
50
1200
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
1500
Ic
1250
Output Voltage:VH(mV)
Ic const
Vc const
1750
Output Voltage:VH(mV)
20
30
Magnetic Flux Density B (mT)
VH-Vc, VH-Ic
2000
1000
750
500
Vc
Ic const
Vc const
1000
Ic
B = 50 (mT)
Ta = 25 (˚C)
800
f
600
Vc
400
200
250
0
–50
0
50
100
Ambient Temperature(˚C)
0
0.0
150
VOS-T
5
10
15
0.5
1.0
Ic (mA) Input Current
Vc (V) Input Voltage
1.5
20 Ic:(mA)
2.0 Vc:(V)
VOS-Vc, VOS-Ic
40
20
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
30
Ic
Ic const
Vc const
18
Offset Voltage:Vos(mV)
Offset Voltage:Vos(mV)
10
20
10
16
i
Ic
B = 0 (mT)
Ta = 25 (˚C)
14
12
10
8
Vc
6
4
Vc
2
0
–50
0
50
100
Ambient Temperature(˚C)
0
0.0
150
*Magnetic Flux Density
1(mT)=10(G)
5
10
15
20 Ic:(mA)
0.5
1.0
Ic (mA) Input Current
Vc (V) Input Voltage
1.5
2.0 Vc:(V)
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
12
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