HY13N50T / HY13N50FT 500V / 13A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=0.52W@VGS=10V, ID=6.5A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charger and SMPS • In compliance with EU RoHs 2002/95/EC Directives 1 1 2 Mechanical Information 3 • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 Marking & Ordering Information 2 3 2 Drain 3 Source 1 TYPE MARKING PACKAGE PACKING HY13N50T 13N50T TO-220AB 50PCS/TUBE HY13N50FT 13N50FT ITO-220AB 50PCS/TUBE Gate Absolute Maximum Ratings (TC=25°C unless otherwise specified ) Parameter Symbol HY13N50T HY13N50FT Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS +30 V Continuous Drain Current TC=25℃ Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TC=25℃ Avalanche Energy with Single Pulse IAS=13A, VDD=140V, L=7.5mH Operating Junction and Storage Temperature Range ID 13 13 A IDM 52 52 A PD 183 1.47 52 0.42 W EAS 633 mJ TJ, TSTG -55 to +150 ℃ Note : 1. Maximum DC current limited by the package Thermal Characteristics Parameter Symbol HY13N50T HY13N50FT Units Junction-to-Case Thermal Resistance RqJC 0.68 2.4 ℃/W Junction-to-Case Thermal Resistance RqJA 50 110 ℃/W COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV 1.0, 24-Sept-2012 PAGE.1 HY13N50T / HY13N50FT Electrical Characteristics ( TC=25℃, Unless otherwise noted ) Paramter Symbol Test Condition Min. Typ. Max. Units Drain-Source Breakdown Voltage BVDSS VGS=0V、ID=250uA 500 - - V Gate Threshold Voltage VGS(th) VDS=VGS、ID=250uA 2.0 - 4.0 V Drain-Source On-State Resistance RDS(ON) VGS=10V、ID=6.5A - 0.44 0.52 W Zero Gate Voltage Drain Current IDSS VDS=500V、VGS=0V - - 10 uA Gate Body Leakage Current IGSS VGS=+30V、VDS=0V - - +100 nA - 25.2 32 - 6.8 - Static Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 7.6 - Turn-On Delay Time td(on) - 26.8 32 - 32 42 - 68 82 - 22.6 28 - 1450 - - 190 - - 6.5 - Turn-On Rise Time Turn-Off Delay Time tr td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=400V，ID=13A VGS=10V VDD=250V，ID=13A VGS=10V，RG=25W VDS=25V，VGS=0V f=1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forwad Voltage IS - - - 13 A Max. Pulsed Source Current ISM - - - 52 A Diode Forward Voltage VSD IS=13A、VGS=0V - - 1.4 V Reverse Recovery Time trr - 450 - ns Reverse Recovery Charge Qrr VGS=0V、IS=13A di/dt=100A/us - 4.5 - uC NOTE : Pulse Test : Pulse Width ≦ 300us, duty cycle ≦ 2% REV 1.0, 24-Sept-2012 PAGE.2 HY13N50T / HY13N50FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 100 ID - Drain Source Current (A) ID - Drain-to-Source Current (A) 25 VGS= 20V~ 7.0V 20 6.0V 15 5.5V 10 5 5.0V VDS =50V 10 25oC TJ = 1 -55oC 0 0.1 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 50 1 Fig.1 Output Characteristric 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 1.5 0.7 RDS(ON) - On Resistance(W) RDS(ON) - On Resistance(W) 2 Fig.2 Transfer Characteristric 0.8 0.6 0.5 VGS=10V 0.4 VGS = 20V 0.3 0.2 0.1 ID =6.5A 1.2 0.9 0.6 0.3 0 0 0 4 8 12 16 4 20 ID - Drain Current (A) 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Fig.3 On-Resistance vs Drain Current Fig.4 On-Resistance vs Gate to Source Voltage 3000 12 f = 1MHz VGS = 0V 2500 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 125oC 2000 Ciss 1500 1000 Coss 500 Crss 0 ID =13A VDS=400V 10 VDS=250V 8 VDS=100V 6 4 2 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Fig.5 Capacitance Characteristic REV 1.0, 24-Sept-2012 30 0 5 10 15 20 25 Qg - Gate Charge (nC) Fig.6 Gate Charge Characteristic PAGE.3 HY13N50T / HY13N50FT Typical Characteristics Curves ( TC=25℃, unless otherwise noted) 1.2 VGS =10 V ID =6.5A BVDSS - Breakdown Voltage (Normalized) RDS(ON) - On-Resistance (Normalized) 2.5 2 1.5 1 0.5 ID = 250mA 1.1 1 0.9 0.8 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (oC) TJ - Junction Temperature (oC) Fig.7 On-Resistance vs Junction Temperature Fig.8 Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) VGS = 0V 10 TJ = 125oC 25oC 1 -55oC 0.1 0.01 0.2 0.4 0.6 0.8 1 VSD - Source-to-Drain Voltage (V) 1.2 Fig.9 Body Diode Forward Voltage Characteristic REV 1.0, 24-Sept-2012 PAGE.4