Hynix HY57V283220LT-S 4 banks x 1m x 32bit synchronous dram Datasheet

HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
Revision History
Revision No.
History
0.1
Defined Preliminary Specification
0.2
1)
2)
3)
4)
5)
6)
0.3
Defined IDD Spec.
0.4
Delited Preliminary.
0.5
Changed IDD Spec.
0.6
133MHz Speed Added
0.7
Changed FBGA Package Size from 11x13 to 8x13.
0.8
1) Changed VDD min from 3.135V to 3.0V.
2) Changed VIL min from VSSQ-0.3V to -0.3V.
0.9
Modified of size erra. (Page15)
(Equation : 13.00 ± 10 -> 13.00 ± 0.10)
Remark
Modified FBGA Ball Configuration Typo.
Changed Functional Block Diagram from A10 to A11.
Changed VDD min from 3.0V to 3.135V.
Changed Cap. Value from C11, 3, 5 to 4pf & C12, 3.8 to 4pf.
Insert tAC2 Value.
Insdrt tRAS & CLK Value.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the
memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is organized as 4banks of 1,048,576x32.
HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
•
JEDEC standard 3.3V power supply
•
Auto refresh and self refresh
•
All device pins are compatible with LVTTL interface
•
4096 refresh cycles / 64ms
•
86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch
•
Programmable Burst Length and Burst Type
•
All inputs and outputs referenced to positive edge of
system clock
•
Data mask function by DQM0,1,2 and 3
•
Internal four banks operation
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
•
Programmable CAS Latency ; 2, 3 Clocks
•
Burst Read Single Write operation
ORDERING INFORMATION
Part No.
Clock Frequency
HY57V283220(L)T(P)-5
HY5V22(L)F(P)-5
200MHz
HY57V283220(L)T(P)-55
HY5V22(L)F(P)-55
183MHz
HY57V283220(L)T(P)-6
HY5V22(L)F(P)-6
166MHz
HY57V283220(L)T(P)-7
HY5V22(L)F(P)-7
143MHz
HY57V283220(L)T(P)-H
HY5V22(L)F(P)-H
133MHz
HY57V283220(L)T(P)-8
HY5V22(L)F(P)-8
125MHz
HY57V283220(L)T(P)-P
HY5V22(L)F(P)-P
100MHz
HY57V283220(L)T(P)-S
HY5V22(L)F(P)-S
100MHz
Organization
Interface
Package
4Banks x 1Mbits x32
LVTTL
86TSOP-II
90Ball FBGA
Note) Hynix supports lead free part for each speed grade with same specification.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P) / HY5V22(L)F(P)
PIN CONFIGURATION ( HY57V283220(L)T(P) Series)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDD
DQM0
/W E
/C A S
/R A S
/C S
A11
BA0
BA1
A 1 0 /A P
A0
A1
A2
DQM2
VDD
NC
D Q 16
VSSQ
D Q 17
D Q 18
VDDQ
D Q 19
D Q 20
VSSQ
D Q 21
D Q 22
VDDQ
D Q 23
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
8 6 p in T S O P II
4 0 0 m il x 8 7 5 m i l
0 .5 m m p i n p i t c h
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
VSS
D Q 15
VSSQ
D Q 14
D Q 13
VDDQ
D Q 12
D Q 11
VSSQ
D Q 10
DQ9
VDDQ
DQ8
NC
VSS
DQM1
NC
NC
C LK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
VSS
NC
D Q 31
VDDQ
D Q 30
D Q 29
VSSQ
D Q 28
D Q 27
VDDQ
D Q 26
D Q 25
VSSQ
D Q 24
VSS
PIN DESCRIPTION
PIN
PIN NAME
DESCRIPTION
CLK
Clock
The system clock input. All other inputs are registered to the SDRAM
on the rising edge of CLK.
CKE
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
CS
Chip Select
Enables or disables all inputs except CLK, CKE and DQM
BA0, BA1
Bank Address
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
A0 ~ A11
Address
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, CAS, WE
Row Address Strobe,
Column Address Strobe,
Write Enable
RAS, CAS and WE define the operation
Refer function truth table for details
DQM0~3
Data Input/Output Mask
Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ31
Data Input/Output
Multiplexed data input / output pin
VDD/VSS
Power Supply/Ground
Power supply for internal circuits and input buffers
VDDQ/VSSQ
Data Output Power/Ground
Power supply for output buffers
NC
No Connection
No connection
Rev. 0.9 / July 2004
3
HY57V283220(L)T(P) / HY5V22(L)F(P)
Ball CONFIGURATION ( HY5V22(L)F(P) Series)
1
2
3
DQ26
DQ24
DQ28
4
5
6
7
8
9
VSS
VDD
DQ23
DQ21
VDDQ
VSSQ
VDDQ
VSSQ
DQ19
VSSQ
DQ27
DQ25
DQ22
DQ20
VDDQ
VSSQ
DQ29
DQ30
DQ17
DQ18
VDDQ
VDDQ
DQ31
NC
NC
DQ16
VSSQ
VSS
DQM3
A3
A2
DQM2
VDD
A
B
C
D
E
F
G
A4
A5
A6
A10
A0
A1
Top View
H
A7
A8
NC
NC
BA1
A11
CLK
CKE
A9
BA0
/CS
/RAS
DQM1
NC
NC
/CAS
/WE
DQM0
VDDQ
DQ8
VSS
VDD
DQ7
VSSQ
VSSQ
DQ10
DQ9
DQ6
DQ5
VDDQ
VSSQ
DQ12
DQ14
DQ1
DQ3
VDDQ
DQ11
VDDQ
VSSQ
VDDQ
VSSQ
DQ4
DQ13
DQ15
VSS
VDD
DQ0
J
K
L
M
N
P
R
DQ2
Ball DESCRIPTION
PIN
PIN NAME
DESCRIPTION
CLK
Clock
The system clock input. All other inputs are registered to the SDRAM on the rising edge
of CLK.
CKE
Clock Enable
Controls internal clock signal and when deactivated, the SDRAM will be one of the states
among power down, suspend or self refresh
CS
Chip Select
Enables or disables all inputs except CLK, CKE and DQM
BA0, BA1
Bank Address
Selects bank to be activated during RAS activity
Selects bank to be read/written during CAS activity
A0 ~ A11
Address
Row Address : RA0 ~ RA11, Column Address : CA0 ~ CA7
Auto-precharge flag : A10
RAS, CAS, WE
Row Address Strobe,
Column Address Strobe, Write
Enable
RAS, CAS and WE define the operation
Refer function truth table for details
DQM0~3
Data Input/Output Mask
Controls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ31
Data Input/Output
Multiplexed data input / output pin
VDD/VSS
Power Supply/Ground
Power supply for internal circuits and input buffers
VDDQ/VSSQ
Data Output Power/Ground
Power supply for output buffers
NC
No Connection
No connection
Rev. 0.9 / July 2004
4
HY57V283220(L)T(P) / HY5V22(L)F(P)
FUNCTIONAL BLOCK DIAGRAM
1Mbit x 4banks x 32 I/O Synchronous DRAM
Self Refresh Logic
& Timer
Refresh
Counter
1M x32 Bank 3
CLK
Row Active
Column
Active
Memory
Cell
Array
Column
Pre
Decoder
DQ0
I/O Buffer & Logic
WE
DQM0
DQM1
DQM2
DQM3
1M x32 Bank 0
X decoder
CAS
1M x32 Bank 1
Sense AMP & I/O Gate
RAS
State Machine
CS
1M x32 Bank 2
X decoder
X decoder
X decoder
CKE
Row
Pre
Decoder
Y decoder
Bank Select
A0
A1
DQ1
DQ30
DQ31
Column Add
Counter
Address
Register
Address buffers
A11
BA0
BA1
Rev. 0.9 / July 2004
Burst
Counter
Mode Register
CAS Latency
Data Out Control
Pipe Line Control
5
HY57V283220(L)T(P) / HY5V22(L)F(P)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
0 ~ 70
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1
W
Soldering Temperature Þ Time
TSOLDER
260 ⋅ 10
°C ⋅ Sec
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA=0 to 70°C)
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1
Input high voltage
VIH
2.0
3.0
VDDQ + 0.3
V
1,2
Input low voltage
VIL
- 0.3
0
0.8
V
1,3
Note
Note :
1.All voltages are referenced to VSS = 0V
2.VIH (max) is acceptable 5.6V AC pulse width with ≤3ns of duration with no input clamp diodes
3.VIL (min) is acceptable -2.0V AC pulse width with ≤3ns of duration with no input clamp diodes
AC OPERATING CONDITION
(TA=0 to 70°C, 3.0V ≤VDD ≤3.6V, VSS=0V - Note1)
Parameter
Symbol
Value
Unit
VIH / VIL
2.4/0.4
V
Vtrip
1.4
V
Input rise / fall time
tR / tF
1
ns
Output timing measurement reference level
Voutref
1.4
V
CL
30
pF
AC input high / low level voltage
Input timing measurement reference level voltage
Output load capacitance for access time measurement
1
Note :
1.Output load to measure access times is equivalent to two TTL gates and one capacitor (30pF)
For details, refer to AC/DC output load circuit
Rev. 0.9 / July 2004
6
HY57V283220(L)T(P) / HY5V22(L)F(P)
CAPACITANCE ( HY57V283220T Series) (TA=25°C, f=1MHz, VDD=3.3V)
Parameter
Pin
Input capacitance
Data input / output capacitance
Symbol
Min
Max
Unit
CLK
CI1
2.5
4.0
pF
A0 ~ A11, BA0, BA1, CKE, CS, RAS, CAS, WE,
DQM0~3
CI2
2.5
4.0
pF
DQ0 ~ DQ31
CI/O
4.0
6.5
pF
OUTPUT LOAD CIRCUIT
Vtt=1.4V
Vtt=1.4V
RT=500 Ω
Output
Output
RT=50 Ω
Z0 = 50Ω
30pF
30pF
DC Output Load Circuit
AC Output Load Circuit
DC CHARACTERISTICS I (DC operating conditions unless otherwise noted)
Parameter
Symbol
Min.
Max
Unit
Note
Input leakage current
ILI
-1
1
uA
1
Output leakage current
ILO
-1
1
uA
2
Output high voltage
VOH
2.4
-
V
IOH = -2mA
Output low voltage
VOL
-
0.4
V
IOL = +2mA
Note :
1.VIN = 0 to 3.6V, All other pins are not under test = 0V
2.DOUT is disabled, VOUT=0 to 3.6V
Rev. 0.9 / July 2004
7
HY57V283220(L)T(P) / HY5V22(L)F(P)
DC CHARACTERISTICS II (DC operating conditions unless otherwise noted)
Speed
Parameter
Operating Current
Precharge Standby Current
in power down mode
Symbol
-5
-55
-6
-7
-H
-8
-P
S
120
120
110
100
100
100
90
90
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
IDD2P
CKE ≤ VIL(max), tCK = 10ns
2
IDD2PS
CKE ≤ VIL(max), tCK = ∞
1
IDD2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = 10ns Input signals are changed one
time during 2clks. All other pins ≥ VDD0.2V or ≤ 0.2V
14
IDD2NS
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
9
IDD3P
CKE ≤ VIL(max), tCK = 10ns
7
IDD3PS
CKE ≤ VIL(max), tCK = ∞
6
Unit
Note
mA
1
mA
Precharge Standby Current
in non power down mode
Active Standby Current
in power down mode
Test Condition
mA
mA
IDD3N
Active Standby Current
in non power down mode
IDD3NS
CKE ≥ VIH(min), CS ≥ VIH(min),
tCK = 10ns Input signals are changed
17
one time during 2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
mA
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
13
ttCK ≥ tCK(min),
IOL=0mA
CL=3
230
220
200
180
180
150
130
130
All banks active
CL=2
-
-
-
-
-
-
130
130
170
160
150
140
140
140
140
140
Burst Mode Operating
Current
IDD4
Auto Refresh Current
IDD5
tRC ≥ tRC(min), All banks active
Self Refresh Current
IDD6
CKE ≤ 0.2V
mA
1
mA
2
2
3
mA
0.8
4
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V283220T(P)(HY5V22F(P))-5/55/6/7/H/8/P/S
4.HY57V283220LT(P)(HY5V22LF(P))-5/55/6/7/H/8/P/S
Rev. 0.9 / July 2004
8
HY57V283220(L)T(P) / HY5V22(L)F(P)
AC CHARACTERISTICS I
(AC operating conditions unless otherwise noted)
-5
Parameter
CAS Latency = 3
tCK3
Max
5
Min
Max
5.5
1000
CAS Latency = 2
-6
-7
-H
-8
-P
-S
Unit Note
Min
System clock
cycle time
-55
Symbol
Min
Max
6
1000
Max
7
1000
Max
7.5
1000
10
Min
Max
8
1000
10
Min
Max
10
1000
-10
Min
Max
10
1000
10
ns
1000
10
Clock high pulse width
tCHW
2
-
2.25
-
2.5
-
3
-
3
-
3
-
3
-
3
-
ns
1
Clock low pulse width
tCLW
2
-
2.25
-
2.5
-
3
-
3
-
3
-
3
-
3
-
ns
1
CAS Latency = 3
tAC3
-
4.5
-
5
-
5.5
-
5.5
-
5.5
-
6
-
6
-
6
ns
CAS Latency = 2
tAC2
-
6
-
6
-
6
-
6
-
6
-
6
-
6
-
6
ns
Data-out hold time
tOH
1.5
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
ns
3
Data-Input setup time
tDS
1.5
-
1.5
-
1.5
-
1.75
-
1.75
-
2
-
2
-
2
-
ns
1
Data-Input hold time
tDH
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
ns
1
Address setup time
tAS
1.5
-
1.5
-
1.5
-
1.75
-
1.75
-
2
-
2
-
2
-
ns
1
Address hold time
tAH
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
ns
1
CKE setup time
tCKS
1.5
-
1.5
-
1.5
-
1.75
-
1.75
-
2
-
2
-
2
-
ns
1
CKE hold time
tCKH
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
ns
1
Command setup time
tCS
1.5
-
1.5
-
1.5
-
1.75
-
1.75
-
2
-
2
-
2
-
ns
1
Command hold time
tCH
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
ns
1
CLK to data output in low Z-time
tOLZ
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
ns
CAS Latency = 3
tOHZ3
-
4.5
-
5
-
5.5
-
5.5
-
5.5
-
6
-
6
-
6
ns
CAS Latency = 2
tOHZ2
-
6
-
6
-
6
-
6
-
6
-
6
-
6
-
6
ns
CLK to data output
in high Z-time
10
Min
tCK2
Access time from
clock
10
Min
12
ns
2
Note :
1.Assume tR / tF (input rise and fall time ) is 1ns
2.Access times to be measured with input signals of 1v/ns edge rate, 0.8v to 2.0v
3.Data-out hold time to be measured under 30pF load condition, without Vt termination
Rev. 0.9 / July 2004
9
HY57V283220(L)T(P) / HY5V22(L)F(P)
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
-5
Parameter
-55
-6
-7
-H
-8
-P
-S
Symbol
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Operation
tRC
55
-
55
-
60
-
63
-
63
-
64
-
70
-
70
-
ns
Auto Refresh
tRRC
55
-
55
-
60
-
63
-
63
-
64
-
70
-
70
-
ns
RAS to CAS delay
tRCD
15
-
16.5
-
18
-
20
-
20
-
20
-
20
-
20
-
ns
RAS active time
tRAS
38.7
100
K
38.7
100
K
42
100
K
42
100
K
42
100
K
48
100
K
50
100
K
50
100
K
ns
RAS precharge time
tRP
15
-
16.5
-
18
-
20
-
20
-
20
-
20
-
20
-
ns
RAS to RAS bank active delay
tRRD
2
-
2
-
2
-
2
-
2
-
2
-
20
-
20
-
CLK
CAS to CAS delay
tCCD
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
CLK
Write command to data-in delay
tWTL
0
-
0
-
0
-
0
-
0
-
0
-
0
-
0
-
CLK
Data-in to precharge command
tDPL
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
CLK
Data-in to active command
tDAL
4
-
4
-
4
-
4
-
4
-
4
-
4
-
4
-
CLK
DQM to data-out Hi-Z
tDQZ
2
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
CLK
DQM to data-in mask
tDQM
0
-
0
-
0
-
0
-
0
-
0
-
0
-
0
-
CLK
MRS to new command
tMRD
2
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
CLK
CAS Latency = 3
tPROZ3
3
-
3
-
3
-
3
-
3
-
3
-
3
-
3
-
CLK
CAS Latency = 2
tPROZ2
2
-
2
-
2
-
2
-
2
-
2
-
2
-
2
-
CLK
Power down exit time
tPDE
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
CLK
Self refresh exit time
tSRE
1
-
1
-
1
-
1
-
1
-
1
-
1
-
1
-
CLK
Refresh Time
tREF
-
64
-
64
-
64
-
64
-
64
-
64
-
64
-
64
ms
Note
RAS cycle time
Precharge to data
output Hi-Z
1
Note :
1. A new command can be given tRRC after self refresh exit
Rev. 0.9 / July 2004
10
HY57V283220(L)T(P) / HY5V22(L)F(P)
DEVICE OPERATING OPTION TABLE
HY5xxxxxxxxx(P)-5
200MHz(5ns)
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
3CLKs
3CLKs
8CLKs
11CLKs
3CLKs
4.5ns
1.5ns
183MHz(5.5ns)
3CLKs
3CLKs
8CLKs
10CLKs
3CLKs
5ns
2ns
166MHz(6ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
5.5ns
2ns
tRCD
tRAS
tRC
tRP
tAC
tOH
2ns
HY5xxxxxxxxx(P)-55
CAS Latency
183MHz(5.5ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
5ns
166MHz(6ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
5.5ns
2ns
143MHz(7ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
5.5ns
2ns
HY5xxxxxxxxx(P)-6
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
166MHz(6ns)
3CLKs
3CLKs
7CLKs
10CLKs
3CLKs
5.5ns
2ns
143MHz(7ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
5.5ns
2ns
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
2.5ns
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
143MHz(7ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
5.5ns
2ns
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
2ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2ns
HY5xxxxxxxxx(P)-7
HY5xxxxxxxxx(P)-H
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
133MHz(7.5ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
5.5ns
2ns
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
2ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2ns
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
2ns
HY5xxxxxxxxx(P)-8
125MHz(8ns)
3CLKs
3CLKs
6CLKs
9CLKs
3CLKs
6ns
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2ns
83MHz(12ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
2.5ns
Rev. 0.9 / July 2004
11
HY57V283220(L)T(P) / HY5V22(L)F(P)
HY5xxxxxxxxx(P)-P
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2.5ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
2.5ns
CAS Latency
tRCD
tRAS
tRC
tRP
tAC
tOH
100MHz(10ns)
3CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2ns
83MHz(12ns)
2CLKs
2CLKs
5CLKs
7CLKs
2CLKs
6ns
2.5ns
66MHz(15ns)
2CLKs
2CLKs
4CLKs
6CLKs
2CLKs
6ns
2.5ns
HY5xxxxxxxxx(P)-S
Rev. 0.9 / July 2004
12
HY57V283220(L)T(P) / HY5V22(L)F(P)
COMMAND TRUTH TABLE
Command
A10/
AP
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
Mode Register Set
H
X
L
L
L
L
X
OP code
No Operation
H
X
H
X
X
X
L
H
H
H
X
X
Bank Active
H
X
L
L
H
H
X
H
X
L
H
L
H
X
CA
H
X
L
H
L
L
X
CA
H
X
L
L
H
L
X
X
Burst Stop
H
X
L
H
H
L
X
X
DQM
H
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Burst-Read-Single-WRITE
H
X
L
L
L
L
X
A9 Pin High
(Other Pins OP code)
Entry
H
L
L
L
L
H
X
Exit
L
H
H
X
X
X
L
H
H
H
Entry
H
L
H
X
X
X
L
H
H
H
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
Read
Read with Autoprecharge
Write
Write with Autoprecharge
Precharge All Banks
Precharge selected Bank
Self Refresh1
X
Precharge power
down
Clock
Suspend
Exit
L
H
Entry
H
L
Exit
L
H
X
ADDR
RA
BA
Note
V
L
H
L
H
V
V
H
X
L
V
X
3
X
X
X
X
X
X
X
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don¢t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.
Rev. 0.9 / July 2004
13
HY57V283220(L)T(P) / HY5V22(L)F(P)
PACKAGE INFORMATION (HY57V283220T(P) Series)
400mil 86pin Thin Small Outline Package
Unit : mm(inch)
11.938(0.4700)
11.735(0.4620)
22.327(0.8790)
22.149(0.8720)
10.262(0.4040)
10.058(0.3960)
0.150(0.0059)
0.050(0.0020)
0.50(0.0197)
Rev. 0.9 / July 2004
0.21(0.008)
0.18(0.007)
1.194(0.0470)
0.991(0.0390)
5deg
0deg
0.597(0.0235)
0.406(0.0160)
0.210(0.0083)
0.120(0.0047)
14
HY57V283220(L)T(P) / HY5V22(L)F(P)
PACKAGE INFORMATION (HY5V22F(P) Series)
90Ball FBGA with 0.8mm of pin pitch
(Ball-side view)
6.40
0.80(typ)
pin#1
ID
0.80 typ
11.20
13.00 ± 0.10
5.60 ± 0.5
6.50 ± 0.5
3.20 ± 0.5
4.00 ± 0.5
8.00
1.20max
Ball Size
0.45 ± 0.05mm
0.850+/-0.075
seating plane
Rev. 0.9 / July 2004
15
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