Infineon HYR186440G-845 Direct rdram rimm modules (with 288 mbit rdrams) Datasheet

HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Direct RDRAM RIMM Modules
(with 288 Mbit RDRAMs)
Overview
The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem
suitable for use in a broad range of applications including computer memory, personal computers,
workstations, and other applications where high bandwidth and low latency are required.
The Direct Rambus RIMM module consists of 288 Mbit Direct Rambus DRAM (Direct RDRAM™)
devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The
use of Rambus Signaling Level (RSL) technology permits 600 MHz to 800 MHz transfer rates while
using conventional system and board design technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed, memory transactions. The separate control and data buses with independent
row and column control yield over 95% bus efficiency. The RDRAM's 32-bank architecture supports
up to four simultaneous transactions per device.
Form Factor
The Rambus RIMM modules are offered in a 184-pad 1 mm edge connector pad pitch form factor
suitable for 184 contact RIMM connectors. The RIMM module is suitable for desktop and other
system applications. The next figure shows an eight device Rambus RIMM module without heat
spreader.
Features
• Gold plated edge connector pad contacts
• High speed 800, 711 & 600 MHz RDRAM
storage
• Serial Presence Detect (SPD) support
• 184 edge connector pads with 1 mm pad
spacing
• Operates from a 2.5 V supply (± 5%)
• Low power and powerdown self refresh
modes
• Maximum module PCB size:
133.5 mm × 31.75 mm × 1.37 mm
(5.25” × 1.25” × 0.05”)
• Separate Row and Column buses for higher
efficiency
• Each RDRAM has 32 banks, for a total of
512, 256,128 or 64 banks on each 512/
576 MB, 256/288MB,128/144 or 64/72 MB
module respectively.
,
Fig.1 : Rambus RIMM module
(without heat spreader)
INFINEON Technologies
1
7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Part Number Designators
Organization
Capacity
I/O Frequency
[MHz]
Part Designator
# of
RDRAMs
RDRAM
Density
32 MB × 16
64 MB
600
HYR163240G-653
2
288 Mbit
32 MB × 16
64 MB
711
HYR163240G-745
2
32 MB × 16
64 MB
800
HYR163240G-845
2
32 MB × 16
64 MB
800
HYR163240G-840
2
32 MB × 18
72 MB
600
HYR183240G-653
2
32 MB × 18
72 MB
711
HYR183240G-745
2
32 MB × 18
72 MB
800
HYR183240G-845
2
32 MB × 18
72 MB
800
HYR183240G-840
2
64 MB × 16
128 MB
600
HYR166440G-653
4
64 MB × 16
128 MB
711
HYR166440G-745
4
64 MB × 16
128 MB
800
HYR166440G-845
4
64 MB × 16
128 MB
800
HYR166440G-840
4
64 MB × 18
144 MB
600
HYR186440G-653
4
64 MB × 18
144 MB
711
HYR186440G-745
4
64 MB × 18
144 MB
800
HYR186440G-845
4
64 MB × 18
144 MB
800
HYR186440G-840
4
128 MB × 16
256 MB
600
HYR1612840G-653
8
128 MB × 16
256 MB
711
HYR1612840G-745
8
128 MB × 16
256 MB
800
HYR1612840G-845
8
128 MB × 16
256 MB
800
HYR1612840G-840
8
128 MB × 18
288 MB
600
HYR1812840G-653
8
128 MB × 18
288 MB
711
HYR1812840G-745
8
128 MB × 18
288 MB
800
HYR1812840G-845
8
128 MB × 18
288 MB
800
HYR1812840G-840
8
256 MB × 16
512 MB
600
HYR1625640G-653
16
256 MB × 16
512 MB
711
HYR1625640G-745
16
256 MB × 16
512 MB
800
HYR1625640G-845
16
256 MB × 16
512 MB
800
HYR1625640G-840
16
256 MB × 18
576 MB
600
HYR1825640G-653
16
256 MB × 18
576 MB
711
HYR1825640G-745
16
256 MB × 18
576 MB
800
HYR1825640G-845
16
256 MB × 18
576 MB
800
HYR1825640G-840
16
64 MB/ 72 MB
128 MB/144 MB
288 Mbit
256 MB/288 MB
288 Mbit
512 MB/576 MB
INFINEON Technologies
2
288 Mbit
7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Pin Configuration
PIN
Pin Name
PIN
Pin Name
PIN
Pin Name
PIN
Pin Name
A1
GND
B1
GND
A47
N.C.
B47
N.C.
A2
LDQA8
B2
LDQA7
A48
N.C.
B48
N.C.
A3
GND
B3
GND
A48
N.C.
B49
N.C.
A4
LDQA6
B4
LDQA5
A50
N.C.
B50
N.C.
A5
GND
B5
GND
A51
VREF
B51
VREF
A6
LDQA4
B6
LDQA3
A52
GND
B52
GND
A7
GND
B7
GND
A53
SCL
B53
SA0
A8
LDQA2
B8
LDQA1
A54
VDD
B54
VDD
A9
GND
B9
GND
A55
SDA
B55
SA1
A10
LDQA0
B10
LCFM
A56
SVdd
B56
SVdd
A11
GND
B11
GND
A57
SWP
B57
SA2
A12
LCTMN
B12
LCFMN
A58
VDD
B58
VDD
A13
GND
B13
GND
A59
RSCK
B59
RCMD
A14
LCTM
B14
N.C.
A60
GND
B60
GND
A15
GND
B15
GND
A61
RDQB7
B61
RDQB8
A16
N.C.
B16
LROW2
A62
GND
B62
GND
A17
GND
B17
GND
A63
RDQB5
B63
RDQB6
A18
LROW1
B18
LROW0
A64
GND
B64
GND
A19
GND
B19
GND
A65
RDQB3
B65
RDQB4
A20
LCOL4
B20
LCOL3
A66
GND
B66
GND
A21
GND
B21
GND
A67
RDQB1
B67
RDQB2
A22
LCOL2
B22
LCOL1
A68
GND
B68
GND
A23
GND
B23
GND
A69
RCOL0
B69
RDQB0
A24
LCOL0
B24
LDQB0
A70
GND
B70
GND
A25
GND
B25
GND
A71
RCOL2
B71
RCOL1
A26
LDQB1
B26
LDQB2
A72
GND
B72
GND
A27
GND
B27
GND
A73
RCOL4
B73
RCOL3
A28
LDQB3
B28
LDQB4
A74
GND
B74
GND
A29
GND
B29
GND
A75
RROW1
B75
RROW0
A30
LDQB5
B30
LDQB6
A76
GND
B76
GND
A31
GND
B31
GND
A77
N.C.
B77
RROW2
A32
LDQB7
B32
LDQB8
A78
GND
B78
GND
A33
GND
B33
GND
A79
RCTM
B79
N.C.
INFINEON Technologies
3
7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Pin Configuration (cont’d)
PIN
Pin Name
PIN
Pin Name
PIN
Pin Name
PIN
Pin Name
A34
LSCK
B34
LCMD
A80
GND
B80
GND
A35
VCMOS
B35
VCMOS
A81
RCTMN
B81
RCFMN
A36
SOUT
B36
SIN
A82
GND
B82
GND
A37
VCMOS
B37
VCMOS
A83
RDQA0
B83
RCFM
A38
N.C.
B38
N.C.
A84
GND
B84
GND
A39
GND
B39
GND
A85
RDQA2
B85
RDQA1
A40
N.C.
B40
N.C.
A86
GND
B86
GND
A41
VDD
B41
VDD
A87
RDQA4
B87
RDQA3
A42
VDD
B42
VDD
A88
GND
B88
GND
A43
N.C.
B43
N.C.
A89
RDQA6
B89
RDQA5
A44
N.C.
B44
N.C.
A90
GND
B90
GND
A45
N.C.
B45
N.C.
A91
RDQA8
B91
RDQA7
A46
N.C.
B46
N.C.
A92
GND
B92
GND
INFINEON Technologies
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7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Module Connector Pad Description
Signal
Module Connector Pads
I/O
Type
Description
GND
A1, A3, A5, A7, A9, A11,
A13, A15, A17, A19, A21,
A23, A25, A27, A29, A31,
A33, A39, A52, A60, A62,
A64, A66, A68, A70, A72,
A74, A76, A78, A80, A82,
A84, A86, A88, A90, A92,
B1, B3, B5, B7, B9, B11,
B13, B15, B17, B19, B21,
B23, B25, B27, B29, B31,
B33, B39, B52, B60, B62,
B64, B66, B68, B70, B72,
B74, B76, B78, B80, B82,
B84, B86, B88, B90, B92
–
–
Ground reference for RDRAM core
and interface. 72 PCB connector
pads.
LCFM
B10
I
RSL
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Positive polarity.
LCFMN
B12
I
RSL
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Negative polarity.
LCMD
B34
I
VCMOS
Serial Command used to read from
and write to the control registers.
Also used for power management.
LCOL4 …
LCOL0
A20, B20, A22, B22, A24
I
RSL
Column bus. 5-bit bus containing
control and address information for
column accesses.
LCTM
A14
I
RSL
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Positive polarity.
LCTMN
A12
I
RSL
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Negative polarity.
LDQA8 …
LDQA0
A2, B2, A4, B4, A6, B6,
A8, B8, A10
I/O
RSL
Data bus A. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
LDQA8 is non-functional on
modules with x16 RDRAM devices.
INFINEON Technologies
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7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Module Connector Pad Description (cont’d)
Signal
Module Connector Pads
I/O
Type
Description
LDQB8 …
LDQB0
B32, A32, B30, A30, B28,
A28, B26, A26, B24
I/O
RSL
Data bus B. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
LDQB8 is non-functional on
modules with x16 RDRAM devices.
LROW2 …
LROW0
B16, A18, B18
I
RSL
Row bus. 3-bit bus containing
control and address information for
row accesses.
LSCK
A34
I
VCMOS
Serial Clock input. Clock source
used to read from and write to the
RDRAM control registers.
N.C.
A16, B14, A38, B38, A40,
B40, A77, B79;A43, B43,
A44, B44, A45, B45, A46,
B46, A47, B47, A48, B48,
A49, B49, A50, B50
–
–
These pads are not connected.
These connector pads are reserved
for future use.
RCFM
B83
I
RSL
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Positive polarity.
RCFMN
B81
I
RSL
Clock from master. Interface clock
used for receiving RSL signals from
the Channel. Negative polarity.
RCMD
B59
I
VCMOS
Serial Command Input used to read
from and write to the control
registers. Also used for power
management.
RCOL4 …
RCOL0
A73, B73, A71, B71, A69
I
RSL
Column bus. 5-bit bus containing
control and address information for
column accesses.
RCTM
A79
I
RSL
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Positive polarity.
RCTMN
A81
I
RSL
Clock to master. Interface clock
used for transmitting RSL signals to
the Channel. Negative polarity.
RDQA8 …
RDQA0
A91, B91, A89, B89, A87,
B87, A85, B85, A83
I/O
RSL
Data bus A. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
RDQA8 is non-functional on
modules with x16 RDRAM devices.
INFINEON Technologies
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7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Module Connector Pad Description (cont’d)
Signal
Module Connector Pads
I/O
Type
Description
RDQB8 …
RDQB0
B61, A61, B63, A63, B65,
A65, B67, A67, B69
I/O
RSL
Data bus B. A 9-bit bus carrying a
byte of read or write data between
the Channel and the RDRAM.
RDQB8 is non-functional on
modules with x16 RDRAM devices.
RROW2 …
RROW0
B77, A75, B75
I
RSL
Row bus. 3-bit bus containing
control and address information for
row accesses.
RSCK
A59
I
VCMOS
Serial Clock input. Clock source
used to read from and write to the
RDRAM control registers.
SA0
B53
I
SVDD
Serial Presence Detect Address 0.
SA1
B55
I
SVDD
Serial Presence Detect Address 1.
SA2
B57
I
SVDD
Serial Presence Detect Address 2.
SCL
A53
I
SVDD
Serial Presence Detect Clock.
SDA
A55
I/O
SVDD
Serial Presence Detect Data (Open
Collector I/O).
SIN
B36
I/O
VCMOS
Serial I/O for reading from and
writing to the control registers.
Attaches to SIO0 of the first RDRAM
on the module.
SOUT
A36
I/O
VCMOS
Serial I/O for reading from and
writing to the control registers.
Attaches to SIO1 of the last RDRAM
on the module.
SVDD
A56, B56
–
–
SPD Voltage. Used for signals SCL,
SDA, SWE, SA0, SA1 and SA2.
SWP
A57
I
SVDD
Serial Presence Detect Write
Protect (active high). When low, the
SPD can be written as well as read.
VCMOS
A35, B35, A37, B37
–
–
CMOS I/O Voltage. Used for signals
CMD, SCK, SIN, SOUT.
VDD
A41, A42, A54, A58, B41,
B42, B54, B58
–
–
Supply voltage for the RDRAM core
and interface logic.
VREF
A51, B51
–
–
Logic threshold reference voltage
for RSL signals.
INFINEON Technologies
7
7.01
RCMD
VREF
Gnd
U0
8
SA[0:2]
A[0:2]
SWP
SCL
SCL
Vcc
SDA
SDA
Serial Presence Detect
SVdd
0.1µF
7.01
RSCK
LCMD
INFINEON Technologies
SOUT
RIMM Module Functional Diagram
SIN
LSCK
SVdd
RDQA8
RDQA7
RDQA6
RDQA5
RDQA4
RDQA3
RDQA2
RDQA1
RDQA0
RCFM
RCFMN
RCTM
RCTMN
RROW2
RROW1
RROW0
RCOL4
RCOL3
RCOL2
RCOL1
RCOL0
RDQB0
RDQB1
RDQB2
RDQB3
RDQB4
RDQB5
RDQB6
RDQB7
RDQB8
Note 1: Rambus Channel signals forma loop through
the RIMM module, with the exception of the SIO
chain.
Note 2: See Serial Presence Detection Specification
for information on the SPD device and its contents.
8
16
256MB/288MB
4
512MB/576MB
2
64MB/72MB
128MB/144MB
Module
Capacity
SIO1
SIO0
SCK
CMD
VREF
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
Direct RDRAM (288 Mb)
UN
GND
Direct RDRAM (288 Mb)
.
.
.
U3
SIO1
SIO0
SCK
CMD
VREF
Direct RDRAM (288 Mb)
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
N
1 per
2 RDRAMs
0.1 µF
VCMOS
GND
1 per
2 RDRAMs
puls one
near
Connector
0.1 µF
U2
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
SIO1
SIO0
SCK
CMD
VREF
Direct RDRAM (288 Mb)
SIO1
SIO0
SCK
CMD
VREF
DQA8
DQA7
DQA6
DQA5
DQA4
DQA3
DQA2
DQA1
DQA0
CFM
CFMN
CTM
CTMN
ROW2
ROW1
ROW0
COL4
COL3
COL2
COL1
COL0
DQB0
DQB1
DQB2
DQB3
DQB4
DQB5
DQB6
DQB7
DQB8
Vref
GND
2 per
RDRAM
0.1 µF
U1
Vdd
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
LDQA8
LDQA7
LDQA6
LDQA5
LDQA4
LDQA3
LDQA2
LDQA1
LDQA0
LCFM
LCFMN
LCTM
LCTMN
LROW2
LROW1
LROW0
LCOL4
LCOL3
LCOL2
LCOL1
LCOL0
LDQB0
LDQB1
LDQB2
LDQB3
LDQB4
LDQB5
LDQB6
LDQB7
LDQB8
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Absolute Maximum Ratings
Symbol Parameter
Limit Values
min.
max.
Unit
VI,ABS
Voltage applied to any RSL or CMOS signal pad with
respect to GND
– 0.3
VDD + 0.3 V
VDD,ABS
Voltage on VDD with respect to GND
– 0.5
VDD + 1.0 V
TSTORE
Storage temperature
– 50
100
°C
DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Limit Values
VDD
Supply voltage
VCMOS
CMOS I/O power supply at pad for
2.5 V controllers:
CMOS I/O power supply at pad for
1.8 V controllers:
Unit
min.
max.
2.50 – 0.13
2.50 + 0.13
V
2.5 – 0.13
2.5 + 0.25
V
1.8 – 0.1
1.8 + 0.2
V
VREF
Reference voltage
1.4 – 0.2
1.4 + 0.2
V
VIL
RSL input low voltage
VREF – 0.5
VREF – 0.2
V
VIH
RSL input high voltage
VREF + 0.2
VREF + 0.5
V
VIL,CMOS
CMOS input low voltage
– 0.3
0.5 VCMOS – 0.25
V
VIH,CMOS
CMOS input high voltage
0.5 VCMOS + 0.25 VCMOS + 0.7
V
VOL,CMOS CMOS output low voltage @
IOL,CMOS = 1 mA
–
0.3
V
VOH,CMOS CMOS output high voltage @
IOH,CMOS = – 0.25 mA
VCMOS – 0.3
–
V
IREF
VREF current @ VREF,MAX
– 10 × no.
RDRAMs1)
10 × no.
RDRAMs1)
µA
ISCK,CMD
CMOS input leakage current @
(0 ≤ VCMOS ≤ VDD)
– 10 × no.
RDRAMs1)
10 × no.
RDRAMs1)
µA
ISIN,SOUT
CMOS input leakage current @
(0 ≤ VCMOS ≤ VDD)
– 10.0
10.0
µA
1) The table below shows the number of 288 Mbit RDRAM devices contained in a RIMM module of
listed memory storage capacity.
RIMM Module Capacity
64/72 MB
128/
144 MB
256/
288 MB
512/
576 MB
Number of 288 Mbit RDRAM devices
2
4
8
16
INFINEON Technologies
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7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
AC Electrical Specifications
Symbol
Parameter and Conditions
Limit Values
Unit
min.
typ.
max.
Ω
Z
Module Impedance
25.2
28
30.8
TPD
Average clock delay from finger of all RSL clock
nets (CTM, CTMN, CFM and CFMN)
–
–
See
ns
Table1)
∆TPD
Propagation delay variation of RSL signals with
respect to TPD2)3 ) for 4 and 8 device modules
– 21
–
21
ps
Propagation delay variation of RSL signals with
respect to TPD2)3 ) for 16 device modules
– 24
–
24
ps
∆TPD-CMOS Propagation delay variation of SCK and CMD
signals with respect to an average clock delay2)
– 100
–
100
ps
VA/VIN
Attenuation Limit
–
–
See
%
1)
Table
VXF/VIN
Forward crosstalk coefficient
(300 ps input rise time @ 20%-80%)
–
–
See
%
1)
Table
VXB/VIN
Backward crosstalk coefficient
(300 ps input rise time @ 20%-80%)
–
–
See
%
1)
Table
1) Table below lists parameters and specifications for different storage capacity RIMM Modules that use 288 Mbit
RDRAM devices.
2) Average clock delay is defined as the average delay from finger to finger of all RSL clock nets (CTM, CTMN,
.....CFM and CFMN).
3.) If the RIMM module meets the folowwing specifications, then it is compliant to the specification. If the RIMM
.....module does not meet these specifications, then the specification can be adjusted by the “Adjusted ∆TPD.....Specification” table.
Adjusted ∆TPD Specfication
Symbol
∆TPD
Parameter and Conditions
Adjusted Min/Max
Absolute
Min /Max
Unit
Propagation delay variation of RSL signals
a
with respect to TPD for 4 and 8 device modules +/-[17+(18*N*∆Z0)]
-30
30
ps
Propagation delay variation of RSL signals
with respect to TPD for 16 device modules
-50
50
ps
+/-[24+(18*N*∆Z0)]
a) Where:
N = Nuber of RDRAM devices installed on the RIMm module
DZ0 = delta Z0% =(max Z0 - minZ0)/(min Z0)
INFINEON Technologies
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HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
(max Z= and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the
modules)
No. of 288 Mbit RDRAMs:
64/72 MB
2
128/144 MB
4
256/288 MB
8
512/576 MB
16
AC Electrical Specifications for RIMM Modules
Parameter and Conditions for -800, 711& -600
RIMM Modules
max.
max.
max.
max.
Propagation Delay, all RSL signals -800, -711
1.28
1.28
1.56
2.06
ns
Propagation Delay, all RSL signals -600
1.28
1.28
1.60
2.10
ns
Attenuation Limit -800, -711
12
12
16
25
%
Attenuation Limit -600
10.5
10.5
12.5
18.5
%
VXF/VIN
Forward crosstalk coefficient (300 ps input rise
time @ 20% - 80%) -800, -711, -600
2
2
4
8
%
VXB/VIN
Backward crosstalk coefficient (300 ps input rise
time @ 20%-80%) -800, -711, -600
1.5
1.5
2.0
2.5
%
RDC
DC Resistance Limit -800, -711, -600
0.6
0.6
0.8
1.2
Ω
Symbol
TPD
VA/VIN
RIMM Module Capacity:
INFINEON Technologies
11
Unit
7.01
HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
IDD2
IDD3
IDD4
IDD5
IDD6
256/288 MB
8
512/576 MB
16
max.
max.
max.
max.
RIMM Module Capacity:
No. of 288 Mbit RDRAMs:
IDD1
128/144 MB
4
IDD
64/72 MB
2
RIMM Module Current Profile
Unit
RIMM Modules Power
Conditionsa)
Freq.
One RDRAM in Readb,
balance in NAP mode
-800
932
940
956
988
mA
-711
863
876
887
919
mA
-600
794
812
818
850
mA
-800
1038
1257
1697
2575
mA
-711
890
1090
1593
2433
mA
-600
764
974
1490
2290
mA
-800
1107
1465
2181
3613
mA
-711
827
1361
2031
3372
mA
-600
946
1258
1882
3130
mA
-800
932
940
956
988
mA
-711
863
876
887
919
mA
-600
794
812
818
850
mA
-800
1038
1257
1697
2575
mA
-711
890
1090
1593
2433
mA
-600
764
974
1490
2290
mA
-800
1107
1465
2181
3613
mA
-711
827
1361
2031
3372
mA
-600
946
1258
1882
3130
mA
One RDRAM in Readb,
balance in Standby mode
One RDRAM in Readb,
balance in Active mode
One RDRAM in Write,
balance in Active mode
One RDRAM in Write,
balance in Standby mode
One RDRAM in Write,
balance in Active mode
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of the percentage of 1’s, to add I/O power for 50% 1’s for a x 16 need to add 257mA or
290mA for x18 ECC module for the following: VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF = 0.5V.
INFINEON Technologies
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HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
The following defines the RIMM module dimensions. All units are in millimeters.
Fig.2 : RIMM Module PCB Physical Description
RIMM Module PCB Physical Description
Dimension Description
Limit Values
min.
nom.
max.
Unit
A
PCB length
133.20
5.244
133.35
5.250
133.50
5.256
mm
in
B
PCB height
–
–
31.75
1.25
mm
in
C
Center-center pad width from pad A1 to A46, A47 –
to A92, B1 to B46 or B47 to B92
–
45.00
1.770
mm
in
D
Spacing from PCB left edge to connector key
notch
55.175
2.172
55.25
2.175
mm
in
E
Spacing from contact pad PCB edge to side edge –
retainer notch
–
17.78
0.700
mm
in
F
PCB thickness
1.17
0.046
1.27
0.050
1.37
0.054
mm
in
G
Heat spreader thickness from PCB surface (one
side) to heat spreader top surface
–
–
3.02
0.119
mm
in
INFINEON Technologies
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HYR16xx40G / HYR18xx40G
Rambus RIMM Modules
Standard RIMM Module Marking
The RIMM modules available from INFINEON Technoligies will be marked per Figure 3 below. This
marking will help OEMs and users identify the Rambus RIMM modules when used in specific
system applications. This will assist OEMs or users to specify and correctly verify if the correct
RIMM modules are installed in their systems. In the diagram, a label is shown attached to the RIMM
module’s heat spreader.
F
G
A
B
D
E
C
Fig.3 Standard RIMM Module Marking
Standard RIMM Module Marking
Label Field
Description
Marked Text
Unit
A
Module Memory
Capacity
Number of 8-bit or 9-bit MBytes of
RDRAM storage in RIMM module
512MB, 256MB,
128MB, 64MB
MB
B
Number of RDRAMs Number of RDRAM devices contained
in the RIMM module
16, 8, 4, 2
RDRAM
devices
C
ECC Support
Indicates whether the RIMM module
supports 8-bit (no ECC) or 9-bit (ECC)
Bytes
blank = 8-bit Byte
ECC = 9-bit Byte
–
D
Memory Speed
Data transfer speed for RDRAM RIMM
module
800, 711, 600
MHz
E
tRAC
Row Access Time
-45, -53
ns
F
Part Number
INFINEON part number
G Manufacturing Code Date Code etc.
INFINEON Technologies
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7.01
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