Qimonda HYS64T16000HU 240-pin unbuffered ddr2 sdram module Datasheet

November 2006
HYS64T16000HU–[3.7/5]–A
HYS72T32000HU–[2.5/25F/3/3S/3.7/5]–A
HYS64T32001HU–[2.5/25F/3/3S/3.7/5]–A
HYS[64/72]T64020HU–[2.5/25F/3/3S/3.7]–A
240-Pin Unbuffered DDR2 SDRAM Modules
DDR2 SDRAM
UDIMM SDRAM
RoHs Compliant
Internet Data Sheet
Rev. 1.41
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
HYS64T16000HU–[3.7/5]–A, HYS72T32000HU–[2.5/25F/3/3S/3.7/5]–A, HYS64T32001HU–[2.5/25F/3/3S/3.7/5]–A,
HYS[64/72]T64020HU–[2.5/25F/3/3S/3.7]–A
Revision History: 2006-11, Rev. 1.41
Page
Subjects (major changes since last revision)
All
Qimonda update
All
Adapted internet edition
Previous Revision: 2006-04, Rev. 1.4
Product portfolio extended : Added -2.5F and -3.7 products
Chapter 1.1 Added features for average self refresh and self refresh rate to Feature list
Chapter 3
Updated IDD Currents
Chapter 3
Corrected note 4 - Table 18
Chapter 4
Updated SPD Codes
Previous Revision: 2005-09, Rev. 1.3
Chapter 4
SPD Codes update: Byte 49 Bit 0 = 1 (HighT_SRFEntry) for all product types
Chapter 5
Package Outlines updated
Previous Revision: 2005-05, Rev. 1.2
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qag_techdoc_rev400 / 3.2 QAG / 2006-08-07
03062006-0GN5-WTPW
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Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
1
Overview
This chapter gives an overview of the 1.8 V 240-Pin Unbuffered DDR2 SDRAM Modules product family and describes its main
characteristics.
1.1
Features
• 240-Pin PC2–6400, PC2–5300, PC2–4200 and PC2–
3200 DDR2 SDRAM memory modules for use as main
memory when installed in systems such as mobile
personal computers.
• 16M × 64, 32M × 64, 32M × 72, 64M × 64, 64M × 72
module organization and 16M × 16, 32M × 8 chip
organization
• 128 MB, 256 MB and 512 MB modules built with 256-Mbit
DDR2 SDRAMs in PG-TFBGA-60 and PG-TFBGA-84
chipsize packages
• Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
• All Speed Grades faster than DDR2–400 comply with
DDR2–400 timing specifications
• Programmable CAS Latencies (3, 4, 5 and 6), Burst
Length (4 & 8) and Burst Type
• Auto Refresh (CBR) and Self Refresh
• Average Refresh Period 7.8 µs at a TCASE lower than
85 °C, 3.9 µs between 85 °C and 95 °C
• Programmable self refresh rate via EMRS2 setting
• All inputs and outputs SSTL_18 compatible
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT)
• Serial Presence Detect with E2PROM
• UDIMM Dimensions (nominal): 30 mm high, 133.35 mm
wide
• Based on standard reference layouts Raw Card “A”, “C”,
“D“, “E“, “F” and “G”
• RoHS compliant products1)
TABLE 1
Performance Table
Product Type Speed Code
–25F
Speed Grade
PC2–6400 PC2–6400 PC2–5300 PC2–5300 PC2–4200 PC2–3200 —
5–5–5
6–6–6
4–4–4
5–5–5
4–4–4
3–3–3
Max. Clock Frequency
@CL6
@CL5
@CL4
@CL3
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
fCK6
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
–2.5
–3
–3S
–3.7
–5
Unit
400
400
–
–
–
–
MHz
400
333
333
333
266
200
MHz
266
266
333
266
266
200
MHz
200
200
200
200
200
200
MHz
12.5
15
12
15
15
15
ns
12.5
15
12
15
15
15
ns
45
45
45
45
45
40
ns
57.5
60
57
60
60
55
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
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Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
1.2
Description
The QIMONDA HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
module family are unbuffered DIMM modules “UDIMMs” with
30,0 mm height based on DDR2 technology. DIMMs are
available as non-ECC modules in 16M × 64 (128MB),
32M × 64 (256MB), 64M × 64 (512MB) and as ECC modules
in 32M × 72 (256MB), 64M × 72 (512MB) organization and
density, intended for mounting into 240-pin connector
sockets.
The memory array is designed with 256-Mbit Double-DataRate-Two (DDR2) Synchronous DRAMs. Decoupling
capacitors are mounted on the PCB board. The DIMMs
feature serial presence detect based on a serial E2PROM
device using the 2-pin I2C protocol. The first 128 bytes are
programmed with configuration data and are write protected;
the second 128 bytes are available to the customer.
TABLE 2
Ordering Information for RoHS Compliant Products
Product Type1)
Compliance Code2)
Description
SDRAM Technology
HYS64T32001HU–2.5–A
256MB 1Rx8 PC2–6400U–666–12–D0
1 Rank, Non-ECC
256 Mbit (x8)
HYS64T64020HU–2.5–A
512MB 2Rx8 PC2–6400U–666–12–E0
2 Ranks, Non-ECC
256 Mbit (x8)
HYS72T32000HU–2.5–A
256MB 1Rx8 PC2–6400E–666–12–F0
1 Rank, ECC
256 Mbit (x8)
HYS72T64020HU–2.5–A
512MB 2Rx8 PC2–6400E–666–12–G0
2 Ranks, ECC
256 Mbit (x8)
HYS64T32001HU–25F–A
256MB 1Rx8 PC2–6400U–555–12–D0
1 Rank, Non-ECC
256 Mbit (x8)
HYS64T64020HU–25F–A
512MB 2Rx8 PC2–6400U–555–12–E0
2 Ranks, Non-ECC
256 Mbit (x8)
HYS72T32000HU–25F–A
256MB 1Rx8 PC2–6400E–555–12–F0
1 Rank, ECC
256 Mbit (x8)
HYS72T64020HU–25F–A
512MB 2Rx8 PC2–6400E–555–12–G0
2 Ranks, ECC
256 Mbit (x8)
256MB 1Rx8 PC2–5300U–444–12–D0
1 Rank, Non-ECC
256 Mbit (x8)
PC2–6400
PC2–5300
HYS64T32001HU–3–A
HYS64T64020HU–3–A
512MB 2Rx8 PC2–5300U–444–12–E0
2 Ranks, Non-ECC
256 Mbit (x8)
HYS72T32000HU–3–A
256MB 1Rx8 PC2–5300E–444–12–F0
1 Rank, ECC
256 Mbit (x8)
HYS72T64020HU–3–A
512MB 2Rx8 PC2–5300E–444–12–G0
2 Ranks, ECC
256 Mbit (x8)
HYS64T32001HU–3S–A
256MB 1Rx8 PC2–5300U–555–12–D0
1 Rank, Non-ECC
256 Mbit (x8)
HYS64T64020HU–3S–A
512MB 2Rx8 PC2–5300U–555–12–E0
2 Ranks, Non-ECC
256 Mbit (x8)
HYS72T32000HU–3S–A
256MB 1Rx8 PC2–5300E–555–12–F0
1 Rank, ECC
256 Mbit (x8)
HYS72T64020HU–3S–A
512MB 2Rx8 PC2–5300E–555–12–G0
2 Ranks,ECC
256 Mbit (x8)
HYS64T16000HU–3.7–A
128MB 1Rx16 PC2–4200U–444–11–C1
1 Rank, Non-ECC
256 Mbit (x16)
HYS64T32001HU–3.7–A
256MB 1Rx8 PC2–4200U–444–11–A1
1 Rank, Non-ECC
256 Mbit (x8)
HYS72T32000HU–3.7–A
256MB 1Rx8 PC2–4200E–444–11–A1
1 Rank, ECC
256 Mbit (x8)
HYS64T64020HU–3.7–A
512MB 2Rx8 PC2–4200U–444–12–E1
2 Ranks, Non-ECC
256 Mbit (x8)
PC2–4200
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Internet Data Sheet
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Unbuffered DDR2 SDRAM Modules
Product Type1)
Compliance Code2)
Description
SDRAM Technology
128MB 1Rx16 PC2–3200U–333–11–C1
1 Rank, Non-ECC
256 Mbit (x16)
PC2–3200
HYS64T16000HU–5–A
HYS64T32001HU–5–A
256MB 1Rx8 PC2–3200U–333–11–A1
1 Rank, Non-ECC
256 Mbit (x8)
HYS72T32000HU–5–A
256MB 1Rx8 PC2–3200E–333–11–A1
1 Rank, ECC
256 Mbit (x8)
1) All product types end with a place code, designating the silicon die revision. Example: HYS64T16000HU–3.7–A, indicating Rev. “A” dies
are used for DDR2 SDRAM components. For all QIMONDA DDR2 module and component nomenclature see Chapter 6 of this data sheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200U–444–11–C1”, where
4200U means Unbuffered DIMM modules with 4.26 GB/sec Module Bandwidth and “444-11” means Column Address Strobe (CAS)
latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.1 and
produced on the Raw Card “C”.
TABLE 3
Address Format
DIMM
Density
Module
Organization
Memory
Ranks
ECC/
Non-ECC
# of SDRAMs # of row/bank/column
bits
Raw
Card
128 MByte
16M × 64
1
Non-ECC
4
C
256 MByte
32M × 64
1
Non-ECC
8
13/2/10
A,D
32M × 72
1
ECC
9
13/2/10
A,F
64M × 64
2
Non-ECC
16
13/2/10
E
64M × 72
2
ECC
18
13/2/10
G
512 MByte
13/2/9
TABLE 4
Components on Modules
Product Type1)
DRAM Components1)
DRAM Density
DRAM Organisation
HYS64T16000HU
HYB18T256160AF
256 Mbit
16M × 16
HYS64T32001HU
HYB18T256800AF
256 Mbit
32M × 8
HYS64T64020HU
HYB18T256800AF
256 Mbit
32M × 8
HYS72T32000HU
HYB18T256800AF
256 Mbit
32M × 8
HYS72T64020HU
HYB18T256800AF
256 Mbit
32M × 8
1) Green Product
2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
Rev. 1.41, 2006-11
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Note2)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
2
Pin Configuration
The pin configuration of the Unbuffered DDR2 SDRAM DIMM is listed by function in Table 5 (240 pins). The abbreviations used
in columns Pin and Buffer Type are explained in Table 6 and Table 7 respectively. The pin numbering is depicted in Figure 1
for non-ECC modules (×64) and Figure 2 for ECC modules (×72).
TABLE 5
Pin Configuration of UDIMM
Ball No.
Name
Pin
Type
Buffer
Type
Function
Clock Signals 2:0, Complement Clock Signals 2:0
Clock Signals
185
CK0
I
SSTL
137
CK1
I
SSTL
220
CK2
I
SSTL
186
CK0
I
SSTL
138
CK1
I
SSTL
221
CK2
I
SSTL
52
CKE0
I
SSTL
171
CKE1
I
SSTL
NC
NC
—
Not Connected
Note: 1 Rank module
193
S0#
I
SSTL
76
S1#
I
SSTL
Chip Select Rank 1:0
Note: 2 Ranks module
NC
NC
—
192
RAS
I
SSTL
Row Address Strobe
74
CAS
I
SSTL
Column Address Strobe
73
WE
I
SSTL
Write Enable
71
BA0
I
SSTL
Bank Address Bus 1:0
190
BA1
I
SSTL
54
BA2
I
SSTL
Bank Address Bus 2
Greater than 512Mb DDR2 SDRAMS
NC
NC
—
Not Connected
Less than 1Gb DDR2 SDRAMS
Clock Enable Rank 1:0
Note: 2 Ranks module
Control Signals
Not Connected
Note: 1 Rank module
Address Signals
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Unbuffered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
188
A0
I
SSTL
Address Bus 12:0
183
A1
I
SSTL
63
A2
I
SSTL
182
A3
I
SSTL
61
A4
I
SSTL
60
A5
I
SSTL
180
A6
I
SSTL
58
A7
I
SSTL
179
A8
I
SSTL
177
A9
I
SSTL
70
A10
I
SSTL
AP
I
SSTL
57
A11
I
SSTL
176
A12
I
SSTL
196
A13
I
SSTL
Address Signal 13
Note: 1 Gbit based module and 512M ×4/×8
NC
NC
—
Not Connected
Note: Module based on 1 Gbit ×16
Module based on 512 Mbit ×16 or smaller
A14
I
SSTL
Address Signal 14
Note: Modules based on 2 Gbit
NC
NC
—
Not Connected
Note: Modules based on 1 Gbit or smaller
3
DQ0
I/O
SSTL
4
DQ1
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
9
DQ2
I/O
SSTL
10
DQ3
I/O
SSTL
122
DQ4
I/O
SSTL
123
DQ5
I/O
SSTL
128
DQ6
I/O
SSTL
129
DQ7
I/O
SSTL
174
Data Signals
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Internet Data Sheet
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Unbuffered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
12
DQ8
I/O
SSTL
13
DQ9
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
21
DQ10
I/O
SSTL
22
DQ11
I/O
SSTL
131
DQ12
I/O
SSTL
132
DQ13
I/O
SSTL
140
DQ14
I/O
SSTL
141
DQ15
I/O
SSTL
24
DQ16
I/O
SSTL
25
DQ17
I/O
SSTL
30
DQ18
I/O
SSTL
31
DQ19
I/O
SSTL
143
DQ20
I/O
SSTL
144
DQ21
I/O
SSTL
149
DQ22
I/O
SSTL
150
DQ23
I/O
SSTL
33
DQ24
I/O
SSTL
34
DQ25
I/O
SSTL
39
DQ26
I/O
SSTL
40
DQ27
I/O
SSTL
152
DQ28
I/O
SSTL
153
DQ29
I/O
SSTL
158
DQ30
I/O
SSTL
159
DQ31
I/O
SSTL
80
DQ32
I/O
SSTL
81
DQ33
I/O
SSTL
86
DQ34
I/O
SSTL
87
DQ35
I/O
SSTL
199
DQ36
I/O
SSTL
200
DQ37
I/O
SSTL
205
DQ38
I/O
SSTL
206
DQ39
I/O
SSTL
89
DQ40
I/O
SSTL
90
DQ41
I/O
SSTL
95
DQ42
I/O
SSTL
96
DQ43
I/O
SSTL
208
DQ44
I/O
SSTL
209
DQ45
I/O
SSTL
214
DQ46
I/O
SSTL
215
DQ47
I/O
SSTL
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Unbuffered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
98
DQ48
I/O
SSTL
99
DQ49
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
107
DQ50
I/O
SSTL
108
DQ51
I/O
SSTL
217
DQ52
I/O
SSTL
218
DQ53
I/O
SSTL
226
DQ54
I/O
SSTL
227
DQ55
I/O
SSTL
110
DQ56
I/O
SSTL
111
DQ57
I/O
SSTL
116
DQ58
I/O
SSTL
117
DQ59
I/O
SSTL
229
DQ60
I/O
SSTL
230
DQ61
I/O
SSTL
235
DQ62
I/O
SSTL
236
DQ63
I/O
SSTL
CB0
I/O
SSTL
Check Bit 0
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB1
I/O
SSTL
Check Bit 1
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB2
I/O
SSTL
Check Bit 2
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB3
I/O
SSTL
Check Bit 3
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB4
I/O
SSTL
Check Bit 4
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB5
I/O
SSTL
Check Bit 5
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
Check Bit Signals
42
43
48
49
161
162
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Unbuffered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
167
CB6
I/O
SSTL
Check Bit 6
Note: ECC type module only
NC
NC
—
Not Connected
Note: ECC type module only
CB7
I/O
SSTL
Check Bit 7
Note: ECC type module only
NC
NC
—
Not Connected
Note: Non-ECC module
7
DQS0
I/O
SSTL
Data Strobe Bus 8:0
16
DQS1
I/O
SSTL
28
DQS2
I/O
SSTL
37
DQS3
I/O
SSTL
84
DQS4
I/O
SSTL
93
DQS5
I/O
SSTL
105
DQS6
I/O
SSTL
114
DQS7
I/O
SSTL
46
DQS8
I/O
SSTL
6
DQS0
I/O
SSTL
168
Data Strobe Bus
Complement Data Strobe Bus 8:0
15
DQS1
I/O
SSTL
27
DQS2
I/O
SSTL
36
DQS3
I/O
SSTL
83
DQS4
I/O
SSTL
92
DQS5
I/O
SSTL
104
DQS6
I/O
SSTL
113
DQS7
I/O
SSTL
45
DQS8
I/O
SSTL
125
DM0
I
SSTL
134
DM1
I
SSTL
146
DM2
I
SSTL
155
DM3
I
SSTL
202
DM4
I
SSTL
211
DM5
I
SSTL
223
DM6
I
SSTL
232
DM7
I
SSTL
164
DM8
I
SSTL
120
SCL
I
CMOS
Serial Bus Clock
119
SDA
I/O
OD
Serial Bus Data
Data Mask Signals
Data Mask Bus 8:0
EEPROM
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Unbuffered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
239
SA0
I
CMOS
Serial Address Select Bus 2:0
240
SA1
I
CMOS
101
SA2
I
CMOS
Power Supplies
VREF
AI
VDDSPD PWR
VDDQ
PWR
—
I/O Reference Voltage
—
EEPROM Power Supply
—
I/O Driver Power Supply
53,59,64,67,69,,
172,178,184,187,
189,197
VDD
PWR
—
Power Supply
2,5,8,11,14,17,,
20,23,26,29,32,
35,38,41,44,47,,
50,65,66,79,82,
85,88,91,94,97,,
100,103,106,
109,112,115,118,
121,124,127,,
130,133,136,139,
142,145,148,,
151,154,157,160,
163,166,169,
198,201,204,207,
210,213,216,,
219,222,225,228,
231,234,237
VSS
GND
—
Ground Plane
195
ODT0
I
SSTL
On-Die Termination Control 0
77
ODT1
I
SSTL
On-Die Termination Control 1
Note: 2 Rank modules
NC
NC
—
Not Connected
Note: 1 Rank modules
18,19,55,68,102,1 NC
26,135,147,
156,165,173,203,
212, 224,233
NC
—
Not connected
1
238
51,56,62,72,75,,
78,170,175,181,,
191,194
Other Pins
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Unbuffered DDR2 SDRAM Modules
TABLE 6
Abbreviations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NC
Not Connected
TABLE 7
Abbreviations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminated Logic (SSTL_18)
LV-CMOS
Low Voltage CMOS
CMOS
CMOS Levels
OD
Open Drain. The corresponding pin has 2 operational states, active low and tri-state,
and allows multiple devices to share as a wire-OR.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
12
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 1
Pin Configuration UDIMM ×64 (240 Pin)
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03062006-0GN5-WTPW
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033
7
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 2
Pin Configuration UDIMM ×72 (240 Pin)
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Rev. 1.41, 2006-11
03062006-0GN5-WTPW
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033
7
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
3
Electrical Characteristics
This chapter lists the electrical characteristics.
3.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.
TABLE 8
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Rating
Unit
Note
Min.
Max.
Voltage on VDD pin relative to VSS
–1.0
+2.3
V
1)
Voltage on VDDQ pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on VDDL pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on any pin relative to VSS
–0.5
+2.3
V
1)
°C
1)2)
Storage Temperature
–55
+100
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
DRAM Component Operating Temperature Range
Symbol
TOPER
Parameter
Rating
Operating Temperature
Min.
Max.
0
95
Unit
Note
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
15
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Unbuffered DDR2 SDRAM Modules
3.2
DC Operating Conditions
This chapter describes the DC operating characteristics.
TABLE 10
Operating Conditions
Parameter
Symbol
Values
Unit
Min.
Max.
0
+65
°C
0
+95
°C
Storage Temperature
TOPR
TCASE
TSTG
– 50
+100
°C
Barometric Pressure (operating & storage)
PBar
+69
+105
kPa
Operating Humidity (relative)
HOPR
10
90
%
Operating temperature (ambient)
DRAM Case Temperature
Note
1)2)3)4)
5)
1)
2)
3)
4)
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs
When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.
5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
Symbol
VDD
VDDQ
VREF
VDDSPD
VIH(DC)
VIL (DC)
IL
Values
Unit
Min.
Typ.
Max.
1.7
1.8
1.9
V
1.7
1.8
1.9
V
1)
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
2)
1.7
—
3.6
V
VREF + 0.125
—
V
– 0.30
—
VDDQ + 0.3
VREF – 0.125
V
In / Output Leakage Current
–5
—
5
µA
1) Under all conditions, VDDQ must be less than or equal to VDD
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ.
3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
Note
16
3)
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Unbuffered DDR2 SDRAM Modules
3.3
Timing Characteristics
This chapter describes the AC characteristics.
3.3.1
Speed Grade Definitions
All Speed grades faster than DDR2-DDR400B comply with DDR2-DDR400B timing specifications (tCK = 5ns with tRAS = 40ns).
Speed Grade Definition for DDR2-800 (Table 12), DDR2-667(Table 13), DDR2-533C(Table 14) and DDR2-400B(Table 15).
TABLE 12
Speed Grade Definition Speed Bins for DDR2–800
Speed Grade
DDR2–800D
DDR2–800E
QAG Sort Name
–2.5F
–2.5
CAS-RCD-RP latencies
5–5–5
6–6–6
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
@ CL = 6
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3.75
8
3.75
8
ns
1)2)3)4)
2.5
8
3
8
ns
1)2)3)4)
2.5
8
2.5
8
ns
1)2)3)4)
45
70000
45
70000
ns
1)2)3)4)5)
57.5
—
60
—
ns
1)2)3)4)
12.5
—
15
—
ns
1)2)3)4)
12.5
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
17
Internet Data Sheet
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Unbuffered DDR2 SDRAM Modules
TABLE 13
Speed Grade Definition Speed Bins for DDR2–667
Speed Grade
DDR2–667C
DDR2–667D
QAG Sort Name
–3
–3S
CAS-RCD-RP latencies
4–4–4
5–5–5
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3
8
3.75
8
ns
1)2)3)4)
3
8
3
8
ns
1)2)3)4)
45
70000
45
70000
ns
1)2)3)4)5)
57
—
60
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) .
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
TABLE 14
Speed Grade Definition Speed Bins for DDR2–533C
Speed Grade
DDR2–533C
QAG Sort Name
–3.7
CAS-RCD-RP latencies
4–4–4
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
ns
1)2)3)4)
3.75
8
ns
1)2)3)4)
3.75
8
ns
1)2)3)4)
45
70000
ns
1)2)3)4)5)
60
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
18
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Unbuffered DDR2 SDRAM Modules
TABLE 15
Speed Grade Definition Speed Bins for DDR2-400B
Speed Grade
DDR2–400B
QAG Sort Name
–5
CAS-RCD-RP latencies
3–3–3
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
ns
1)2)3)4)
5
8
ns
1)2)3)4)
5
8
ns
1)2)3)4)
40
70000
ns
1)2)3)4)5)
55
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) .
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
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Unbuffered DDR2 SDRAM Modules
3.3.2
Component AC Timing Parameters
Timing Parameters for DDR2-800 (Table 16), DDR2-667(Table 17), DDR2-533(Table 18) and DDR2-400(Table 19).
TABLE 16
DRAM Component Timing Parameter by Speed Grade - DDR2–800
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
–400
+400
ps
9)
–350
+350
ps
9)
0.48
0.52
tCK.AVG
10)11)
0.48
0.52
tCK.AVG
10)11)
2500
8000
ps
10)11)
50
—
ps
12)13)14)
125
—
ps
13)14)15)
0.6
—
0.35
—
tCK.AVG
tCK.AVG
—
ps
9)16)
tAC.MIN
2 × tAC.MIN
tAC.MAX
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
—
200
ps
17)
Min(tCH.ABS,
tCL.ABS)
__
ps
18)
—
300
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL – 1
DQ output access time from CK / CK
DQS output access time from CK / CK
Average clock high pulse width
tAC
tDQSCK
tCH.AVG
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
DQ and DM input pulse width for each input
tDIPW
Data-out high-impedance time from CK / CK
tHZ
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
Average clock low pulse width
DQ hold skew factor
nCK
DQS latching rising transition to associated clock tDQSS
edges
– 0.25
+ 0.25
tCK.AVG
tDQSH
DQS input low pulse width
tDQSL
DQS falling edge to CK setup time
tDSS
DQS falling edge hold time from CK
tDSH
Write postamble
tWPST
Write preamble
tWPRE
Address and control input setup time
tIS.BASE
Address and control input hold time
tIH.BASE
Read preamble
tRPRE
Read postamble
tRPST
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
0.35
—
0.35
—
0.2
—
0.2
—
DQS input high pulse width
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21)
0.4
0.6
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
175
—
ps
22)23)
250
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
2
—
nCK
15
—
ns
28)
WR + tnRP
—
nCK
28)29)
7.5
—
ns
28)30)
21)
21)
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Unbuffered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
tRTP
tXSNR
tXSRD
tXP
7.5
—
ns
28)
tRFC +10
—
ns
28)
200
—
nCK
2
—
nCK
tXARD
tXARDS
2
—
nCK
8 – AL
—
nCK
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
Mode register set command cycle time
tMRD
tMOD
tOIT
tDELAY
2
—
nCK
0
12
ns
28)
0
12
ns
28)
tIS + tCK .AVG +
tIH
—
ns
Internal Read to Precharge command delay
Exit self-refresh to a non-read command
Exit self-refresh to read command
Exit precharge power-down to any valid
command (other than NOP or Deselect)
Exit power down to read command
Exit active power-down mode to read command
(slow exit, lower power)
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
31)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 4.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 4.
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16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the
max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 5.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 5.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 3 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
29) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
30) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
31) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
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Unbuffered DDR2 SDRAM Modules
TABLE 17
DRAM Component Timing Parameter by Speed Grade - DDR2–667
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
–450
+450
ps
9)
–400
+400
ps
9)
0.48
0.52
tCK.AVG
10)11)
0.48
0.52
tCK.AVG
10)11)
3000
8000
ps
100
—
ps
12)13)14)
175
—
ps
13)14)15)
0.6
—
0.35
—
tCK.AVG
tCK.AVG
—
ps
9)16)
tAC.MIN
2 x tAC.MIN
tAC.MAX
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
—
240
ps
17)
Min(tCH.ABS,
tCL.ABS)
__
ps
18)
—
340
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL–1
DQ output access time from CK / CK
DQS output access time from CK / CK
Average clock high pulse width
tAC
tDQSCK
tCH.AVG
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
DQ and DM input pulse width for each input
tDIPW
Data-out high-impedance time from CK / CK
tHZ
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
Average clock low pulse width
DQ hold skew factor
nCK
21)
DQS latching rising transition to associated clock tDQSS
edges
– 0.25
+ 0.25
tCK.AVG
DQS input high pulse width
tDQSH
tDQSL
DQS falling edge to CK setup time
tDSS
DQS falling edge hold time from CK
tDSH
Write postamble
tWPST
Write preamble
tWPRE
Address and control input setup time
tIS.BASE
Address and control input hold time
tIH.BASE
Read preamble
tRPRE
Read postamble
tRPST
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
Internal Read to Precharge command delay
tRTP
Exit self-refresh to a non-read command
tXSNR
Exit self-refresh to read command
tXSRD
0.35
—
DQS input low pulse width
0.35
—
0.2
—
0.2
—
0.4
0.6
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
200
—
ps
22)23)
275
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
2
—
nCK
15
—
ns
28)
WR + tnRP
—
nCK
28)29)
7.5
—
ns
28)30)
7.5
—
ns
28)
tRFC +10
—
ns
28)
200
—
nCK
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21)
21)
25)27)
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Unbuffered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
nCK
Exit power down to read command
tXARD
tXARDS
2
—
nCK
7 – AL
—
nCK
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
Mode register set command cycle time
tMRD
tMOD
tOIT
tDELAY
2
—
nCK
0
12
ns
28)
0
12
ns
28)
tIS + tCK .AVG +
tIH
—
ns
Exit active power-down mode to read command
(slow exit, lower power)
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
31)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 4.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 4.
16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
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Unbuffered DDR2 SDRAM Modules
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the
max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 5.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 5.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 3 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
29) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
30) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
31) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
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Unbuffered DDR2 SDRAM Modules
FIGURE 3
Method for calculating transitions and endpoint
92+[P9
977[P9
92+[P9
977[P9
W/=
W+=
W535(EHJLQSRLQW
W5367
H QGSRLQW
92/[P9
977[P9
92/[P9
977[P9
7 7
7 7
W+=W5367
HQGSRLQW 77
W/=W535(
E HJLQSRLQW 7
7
FIGURE 4
Differential input waveform timing - tDS and tDS
'46
'46
W'6
W'+
W'6
W'+
9''4
9,+ DF PL
Q
9,+ GF PL
Q
95() GF 9,/ GF PD
[
9,/ DF PD
[
966
FIGURE 5
Differential input waveform timing - tlS and tlH
&.
&.
W,6
W,+
W,6
W,+
9''4
9,+DF PLQ
9,+GF PLQ
95() GF 9,/ GF PD[
9,/ DF PD[
966
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Unbuffered DDR2 SDRAM Modules
TABLE 18
DRAM Component Timing Parameter by Speed Grade - DDR2–533
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tAC
tCCD
tCH
tCKE
tCL
tDAL
–500
+500
ps
2
—
0.45
0.55
3
—
0.45
0.55
WR + tRP
—
tCK
tCK
tCK
tCK
tCK
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tDELAY
tIS + tCK + tIH
—
ns
9)
DQ and DM input hold time (differential data
strobe)
tDH(base)
225
—
ps
10)
–25
—
ps
11)
tDIPW
tDQSCK
tDQSL,H
tDQSQ
0.35
—
tCK
–450
+450
ps
0.35
—
tCK
—
300
ps
tDQSS
tDS(base)
– 0.25
+ 0.25
tCK
100
—
ps
11)
–25
—
ps
11)
tDSH
0.2
—
tCK
DQS falling edge to CK setup time (write cycle) tDSS
0.2
—
tCK
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
DQ and DM input hold time (single ended data tDH1(base)
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended data tDS1(base)
strobe)
DQS falling edge hold time from CK (write
cycle)
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Rev. 1.41, 2006-11
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tHP
tHZ
tIH(base)
tIPW
MIN. (tCL, tCH)
tIS(base)
tLZ(DQ)
tLZ(DQS)
tMRD
tOIT
tQH
tQHS
27
8)18)
11)
—
12)
—
tAC.MAX
ps
13)
375
—
ps
11)
0.6
—
tCK
250
—
ps
11)
2 × tAC.MIN
ps
14)
tAC.MIN
tAC.MAX
tAC.MAX
ps
14)
2
—
tCK
0
12
ns
tHP –tQHS
—
—
—
400
ps
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Unbuffered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Average periodic refresh Interval
tREFI
Min.
Max.
—
7.8
µs
14)15)
—
3.9
µs
16)18)
17)
Auto-Refresh to Active/Auto-Refresh
command period
tRFC
75
—
ns
Precharge-All (4 banks) command period
tRP
tRP
tRPRE
tRPST
tRRD
tRP + 1tCK
15 + 1tCK
—
ns
—
ns
0.9
1.1
14)
0.40
0.60
tCK
tCK
Precharge-All (8 banks) command period
Read preamble
Read postamble
Active bank A to Active bank B command
period
14)
7.5
—
ns
14)18)
10
—
ns
16)20)
tRTP
tWPRE
tWPST
tWR
7.5
—
ns
0.25
—
0.40
0.60
tCK
tCK
15
—
ns
Write recovery time for write with AutoPrecharge
WR
tWR/tCK
—
tCK
20)
Internal Write to Read command delay
tWTR
tXARD
7.5
—
ns
21)
2
—
tCK
22)
Exit active power-down mode to Read
command (slow exit, lower power)
tXARDS
6 – AL
—
tCK
22)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
tCK
Exit Self-Refresh to non-Read command
tXSNR
tXSRD
tRFC +10
—
ns
200
—
tCK
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without AutoPrecharge
Exit power down to any valid command
(other than NOP or Deselect)
Exit Self-Refresh to Read command
19)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to
the WR parameter stored in the MR.
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.
10) For timing definition, refer to the Component data sheet.
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate
mis-match between DQS / DQS and associated DQ in any given cycle.
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can
be greater than the minimum specification limits for tCL and tCH).
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Unbuffered DDR2 SDRAM Modules
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These
parameters are verified by design and characterization, but not subject to production test.
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C
and 95 °C.
15) 0 °C≤ TCASE ≤ 85 °C
16) 85 °C < TCASE ≤ 95 °C
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 “Ordering Information for RoHS
Compliant Products” on Page 4.
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK
refers to the application clock period. WR refers to the WR parameter stored in the MRS.
21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.
22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow
power-down exit timing tXARDS has to be satisfied.
TABLE 19
DRAM Component Timing Parameter by Speed Grade - DDR2-400
Parameter
Symbol
DDR2–400
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tAC
tCCD
tCH
tCKE
tCL
tDAL
–600
+600
ps
2
—
0.45
0.55
3
—
0.45
0.55
WR + tRP
—
tCK
tCK
tCK
tCK
tCK
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tDELAY
tIS + tCK + tIH
—
ns
9)
DQ and DM input hold time (differential data
strobe)
tDH(base)
275
—
ps
10)
–25
—
ps
11)
0.35
—
tCK
–500
+500
ps
0.35
—
tCK
—
350
ps
– 0.25
+ 0.25
tCK
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
DQ and DM input hold time (single ended data tDH1(base)
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
tDIPW
tDQSCK
tDQSL,H
tDQSQ
Write command to 1st DQS latching transition tDQSS
8)22)
11)
DQ and DM input setup time (differential data
strobe)
tDS(base)
150
—
ps
11)
DQ and DM input setup time (single ended
data strobe)
tDS1(base)
–25
—
ps
11)
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Unbuffered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–400
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tDSH
0.2
—
tCK
DQS falling edge to CK setup time (write cycle) tDSS
0.2
—
tCK
DQS falling edge hold time from CK (write
cycle)
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Average periodic refresh Interval
tHP
tHZ
tIH(base)
tIPW
12)
MIN. (tCL, tCH)
tIS(base)
tLZ(DQ)
tLZ(DQS)
tMRD
tOIT
tQH
tQHS
tREFI
—
tAC.MAX
ps
13)
475
—
ps
11)
0.6
—
tCK
350
—
ps
11)
2 × tAC.MIN
ps
14)
tAC.MIN
tAC.MAX
tAC.MAX
ps
14)
2
—
tCK
0
12
ns
tHP –tQHS
—
—
450
ps
—
7.8
µs
14)15)
—
3.9
µs
16)18)
17)
Auto-Refresh to Active/Auto-Refresh
command period
tRFC
75
—
ns
Precharge-All (4 banks) command period
tRP
tRP
tRPRE
tRPST
tRRD
tRP + 1tCK
15 + 1tCK
—
ns
—
ns
0.9
1.1
14)
0.40
0.60
tCK
tCK
Precharge-All (8 banks) command period
Read preamble
Read postamble
14)
7.5
—
ns
14)18)
10
—
ns
16)20)
tRTP
tWPRE
tWPST
tWR
7.5
—
ns
0.25
—
0.40
0.60
tCK
tCK
15
—
ns
Write recovery time for write with AutoPrecharge
WR
tWR/tCK
—
tCK
20)
Internal Write to Read command delay
tWTR
tXARD
10
—
ns
21)
2
—
tCK
22)
Exit active power-down mode to Read
command (slow exit, lower power)
tXARDS
6 – AL
—
tCK
22)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
tCK
Exit Self-Refresh to non-Read command
tXSNR
tXSRD
tRFC +10
—
ns
200
—
tCK
Active bank A to Active bank B command
period
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without AutoPrecharge
Exit power down to any valid command
(other than NOP or Deselect)
Exit Self-Refresh to Read command
Rev. 1.41, 2006-11
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19)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to
the WR parameter stored in the MR.
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.
10) For timing definition, refer to the Component data sheet.
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate
mis-match between DQS / DQS and associated DQ in any given cycle.
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can
be greater than the minimum specification limits for tCL and tCH).
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These
parameters are verified by design and characterization, but not subject to production test.
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C
and 95 °C.
15) 0 °C≤ TCASE ≤ 85 °C
16) 85 °C < TCASE ≤ 95 °C
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 “Ordering Information for RoHS
Compliant Products” on Page 4.
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK
refers to the application clock period. WR refers to the WR parameter stored in the MRS.
21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.
22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow
power-down exit timing tXARDS has to be satisfied.
Rev. 1.41, 2006-11
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Unbuffered DDR2 SDRAM Modules
3.3.3
ODT AC Electrical Characteristics
• Table 20 “ODT AC Character. and Operating Conditions for DDR2-667 & DDR2-800” on Page 32
• Table 21 “ODT AC Character. and Operating Conditions for DDR2-533 & DDR2-400” on Page 33
TABLE 20
ODT AC Character. and Operating Conditions for DDR2-667 & DDR2-800
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter / Condition
Values
Unit
Note
Min.
Max.
ODT turn-on delay
2
2
nCK
1)
ODT turn-on
tAC.MAX + 0.7 ns
2 tCK + tAC.MAX + 1 ns
ns
1)2)
ODT turn-on (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
1)
ODT turn-off delay
2.5
2.5
nCK
1)
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
1)3)
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
1)
ODT to Power Down Mode Entry Latency
3
—
nCK
1)
1)
ODT Power Down Exit Latency
8
—
nCK
1) New units, 'tCK.AVG' and 'nCK', are introduced in DDR2-667 and DDR2-800. Unit 'tCK.AVG' represents the actual tCK.AVG of the input clock
under operation. Unit 'nCK' represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and
DDR2-533, 'tCK' is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 × tCK.AVG+ tEPR.2PER(MIN).
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is
2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.
3) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800,if tCK.AVG =
3 ns is assumed, tAOFD= 1.5 ns (0.5 × 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT
LOW and by counting the actual input clock edge.
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Unbuffered DDR2 SDRAM Modules
TABLE 21
ODT AC Character. and Operating Conditions for DDR2-533 & DDR2-400
Symbol
Parameter / Condition
Values
Min.
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Unit
Note
Max.
ODT turn-on delay
2
2
tCK
ODT turn-on
tAC.MAX + 1 ns
2 tCK + tAC.MAX + 1 ns
ns
ODT turn-on (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ODT turn-off delay
2.5
2.5
tCK
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ODT to Power Down Mode Entry Latency
3
—
ODT Power Down Exit Latency
8
—
tCK
tCK
1)
ns
2)
ns
1) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is
10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
33
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
3.4
IDD Specifications and Conditions
List of tables defining IDD Specifications and Conditions.
• Table 22 “IDD Measurement Conditions” on Page 34
• Table 23 “Definitions for IDD” on Page 35
• Table 24 “I DD Specification for HYS[64/72]T[32/64]xxxHU-[2.5/2.5F]–A” on Page 36
• Table 25 “I DD Specification for HYS[64/72]T[32/64]xxxHU-[3/3S]–A” on Page 37
• Table 26 “I DD Specification for HYS[64/72]T[16/32/64]xxxHU-[3.7/5]–A” on Page 38
TABLE 22
IDD Measurement Conditions
Parameter
Symbol Note
1)2)3)4)5)
Operating Current 0
IDD0
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between
valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
Operating Current 1
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN,
tRCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and
control inputs are SWITCHING, Databus inputs are SWITCHING.
IDD1
6)
Precharge Standby Current
IDD2N
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING,
Databus inputs are SWITCHING.
Precharge Power-Down Current
Other control and address inputs are STABLE, Data bus inputs are FLOATING.
IDD2P
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,
Data bus inputs are FLOATING.
IDD2Q
Active Standby Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD3N
Active Power-Down Current
IDD3P(0)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);
Active Power-Down Current
IDD3P(1)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);
Operating Current - Burst Read
IDD4R
All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX;
tRP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data
bus inputs are SWITCHING; IOUT = 0mA.
Operating Current - Burst Write
All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING;
IDD4W
Burst Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5B
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
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6)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Parameter
Symbol Note
1)2)3)4)5)
Distributed Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5D
Self-Refresh Current
IDD6
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.
All Bank Interleave Read Current
IDD7
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.
3) Definitions for IDD see Table 23.
4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P.
6)
5) For details and notes see the relevant Qimonda component data sheet.
6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.
TABLE 23
Definitions for IDD
Parameter
Description
LOW
VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN
STABLE
Inputs are stable at a HIGH or LOW level
FLOATING
Inputs are VREF = VDDQ /2
SWITCHING
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ
signals not including mask or strobes
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
35
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 24
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
HYS64T32001HU–25F–A
HYS64T64020HU–25F–A
HYS72T32000HU–25F–A
HYS72T64020HU–25F–A
IDD Specification for HYS[64/72]T[32/64]xxxHU-[2.5/2.5F]–A
Organization
256MB
512MB
256MB
512MB
256MB
512MB
256MB
512MB
1 Rank
2 Ranks
1 Rank
2 Ranks
1 Rank
2 Ranks
1 Rank
2 Ranks
x64
x64
x72
x72
x64
x64
x72
x72
–2.5
–2.5
–2.5
–2.5
–25F
–25F
–25F
–25F
Symbol
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3P( MRS = 0)
IDD3P( MRS = 1)
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
600
640
680
720
640
680
720
680
720
770
810
720
760
400
800
450
900
400
40
80
50
90
280
560
320
180
350
40
1)
2)
3)
4)
Unit
Note1)
770
mA
2)
810
860
mA
2)
800
450
900
mA
3)
40
80
50
90
mA
3)
630
280
560
320
630
mA
3)
200
400
180
350
200
400
mA
3)
80
50
90
40
80
50
90
mA
3)
400
800
450
900
400
800
450
900
mA
3)
1000
1040
1130
1170
1000
1040
1130
1170
mA
2)
1080
1120
1220
1260
1080
1120
1220
1260
mA
2)
760
800
860
900
760
800
860
900
mA
2)
50
100
50
110
50
100
50
110
mA
3)4)
32
64
36
72
32
64
36
72
mA
3)4)
1240
1280
1400
1440
1320
1360
1485
1530
mA
Calculated values from component data. ODT disabled. IDD1 , IDD4R and IDD7 are defined with the outputs disabled.
The other rank is in IDD2P Precharge Power-Down Current mode.
Both ranks are in the same IDD current mode.
IDD5D and IDD6 values are for 0 °C ≤ TCase ≤ 85 °C.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
36
2)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 25
IDD Specification for HYS[64/72]T[32/64]xxxHU-[3/3S]–A
HYS64T64020HU–3–A
HYS72T32000HU–3–A
HYS72T64020HU–3–A
HYS64T32001HU–3S–A
HYS64T64020HU–3S–A
HYS72T32000HU–3S–A
HYS72T64020HU–3S–A
Note1)
HYS64T32001HU–3–A
Unit
256 MB
512 MB
256 MB
512 MB
256 MB
512 MB
256 MB
512 MB
1 Rank
2 Ranks
1 Rank
2 Ranks
1 Rank
2 Ranks
1 Rank
2 Ranks
x64
x64
x72
x72
x64
x64
x72
x72
–3
–3
–3
–3
–3S
–3S
–3S
–3S
Symbol
Max.
Max.
Max.
Max.
Max.
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3P( MRS = 0)
IDD3P( MRS = 1)
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
520
560
590
630
500
540
560
600
mA
2)
600
640
680
720
570
610
640
680
mA
2)
360
720
410
810
360
720
410
810
mA
3)
40
80
50
90
40
80
50
90
mA
3)
240
480
270
540
240
480
270
540
mA
3)
150
300
170
340
150
300
170
340
mA
3)
40
80
50
90
40
80
50
90
mA
3)
360
720
410
810
360
720
410
810
mA
3)
880
920
990
1040
880
920
990
1040
mA
2)
920
960
1040
1080
920
960
1040
1080
mA
2)
760
800
860
900
760
800
860
900
mA
2)
50
100
50
110
50
100
50
110
mA
3)4)
32
64
36
72
32
64
36
72
mA
3)4)
1160
1200
1310
Product Type
Organization
1)
2)
3)
4)
1350
1100
1140
1240
1290
mA
Calculated values from component data. ODT disabled. IDD1 , IDD4R and IDD7 are defined with the outputs disabled.
The other rank is in IDD2P Precharge Power-Down Current mode
Both ranks are in the same IDD current mode
IDD5D and IDD6 values are for 0 °C ≤ TCase ≤ 85 °C.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
37
2)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 26
Product Type
HYS64T16000HU–3.7–A
HYS64T32001HU–3.7–A
HYS72T32000HU–3.7–A
HYS64T64020HU–3.7–A
HYS64T16000HU–5–A
HYS64T32001HU–5–A
HYS72T32000HU–5–A
IDD Specification for HYS[64/72]T[16/32/64]xxxHU-[3.7/5]–A
Organization
128 MB
256 MB
256 MB
512 MB
128 MB
256 MB
256 MB
1 Rank
1 Rank
1 Rank
2 Ranks
1 Rank
1 Rank
1 Rank
x64
x64
x72
x64
x64
x64
x72
–3.7
–3.7
–3.7
–3.7
–5
–5
–5
Symbol
Max.
Max.
Max.
Max.
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3P( MRS = 0)
IDD3P( MRS = 1)
IDD3N
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
220
470
500
530
200
400
240
510
540
580
220
140
560
320
630
20
65
40
100
400
60
1)
2)
3)
4)
Unit
Note1)
450
mA
2)
440
500
mA
2)
110
220
250
mA
3)
70
20
30
40
mA
3)
230
450
80
160
180
mA
3)
260
140
290
50
100
120
mA
3)
20
65
40
70
20
30
40
mA
3)
140
560
320
630
120
240
270
mA
3)
320
590
630
670
280
480
540
mA
2)
400
710
770
800
360
560
630
mA
2)
340
710
770
800
320
640
720
mA
2)
20
100
50
110
20
50
50
mA
3)4)
16
64
36
72
16
32
36
mA
3)4)
600
1110
1220
1250
560
1000
1130
mA
Calculated values from component data. ODT disabled. IDD1 , IDD4R and IDD7 are defined with the outputs disabled.
The other rank is in IDD2P Precharge Power-Down Current mode.
Both ranks are in the same IDD current mode.
IDD5D and IDD6 values are for 0 °C ≤ TCase ≤ 85 °C.
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
38
2)
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.
List of SPD Code Tables
•
•
•
•
•
•
Table 27 “SPD Codes for PC2–6400[U/E]–666” on Page 39
Table 28 “SPD Codes for PC2–6400[U/E]–555” on Page 44
Table 29 “SPD Codes for PC2–5300[U/E]–444” on Page 48
Table 30 “SPD Codes for PC2–5300[U/E]–555” on Page 52
Table 31 “SPD Codes for PC2–4200[U/E]–444” on Page 56
Table 32 “SPD Codes for PC2–3200[U/E]–333” on Page 60
TABLE 27
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
SPD Codes for PC2–6400[U/E]–666
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
61
60
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
25
25
25
25
40
40
40
40
10
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
39
Internet Data Sheet
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
03
03
03
03
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
30
30
30
30
45
45
45
45
3D
3D
3D
3D
50
50
50
50
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
2D
2D
2D
2D
31
Module Density per Rank
40
40
40
40
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
17
17
17
17
25
25
25
25
05
05
05
05
12
12
12
12
3C
3C
3C
3C
33
34
35
36
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
40
Internet Data Sheet
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
37
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
40
00
00
00
00
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
38
41
3C
3C
3C
3C
4B
4B
4B
4B
80
80
80
80
14
14
14
14
1E
1E
1E
1E
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
53
53
53
53
48
Psi(T-A) DRAM
82
82
82
82
42
43
44
49
∆T0 (DT0)
5B
5B
5B
5B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3E
3E
3E
3E
51
∆T2P (DT2P)
29
29
29
29
52
∆T3N (DT3N)
29
29
29
29
53
∆T3P.fast (DT3P fast)
36
36
36
36
54
∆T3P.slow (DT3P slow)
19
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4E
4E
4E
4E
56
∆T5B (DT5B)
17
17
17
17
57
∆T7 (DT7)
26
26
26
26
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
41
Internet Data Sheet
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
63
Checksum of Bytes 0-62
76
77
88
89
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
33
36
33
36
77
Product Type, Char 5
32
34
32
34
78
Product Type, Char 6
30
30
30
30
79
Product Type, Char 7
30
32
30
32
80
Product Type, Char 8
31
30
30
30
81
Product Type, Char 9
48
48
48
48
82
Product Type, Char 10
55
55
55
55
83
Product Type, Char 11
32
32
32
32
84
Product Type, Char 12
2E
2E
2E
2E
85
Product Type, Char 13
35
35
35
35
86
Product Type, Char 14
41
41
41
41
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
42
Internet Data Sheet
Product Type
HYS64T32001HU–2.5–A
HYS64T64020HU–2.5–A
HYS72T32000HU–2.5–A
HYS72T64020HU–2.5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
3x
3x
3x
3x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
43
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 28
Product Type
HYS64T32001HU–25F–A
HYS64T64020HU–25F–A
HYS72T32000HU–25F–A
HYS72T64020HU–25F–A
SPD Codes for PC2–6400[U/E]–555
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
61
60
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
25
25
25
25
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
40
40
40
40
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
03
03
03
03
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
44
Internet Data Sheet
Product Type
HYS64T32001HU–25F–A
HYS64T64020HU–25F–A
HYS72T32000HU–25F–A
HYS72T64020HU–25F–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
25
25
25
25
40
40
40
40
3D
3D
3D
3D
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
31
Module Density per Rank
32
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
39
Analysis Characteristics
40
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
1E
1E
1E
1E
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
53
53
53
53
48
Psi(T-A) DRAM
82
82
82
82
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
45
32
32
32
32
1E
1E
1E
1E
32
32
32
32
2D
2D
2D
2D
40
40
40
40
17
17
17
17
25
25
25
25
05
05
05
05
12
12
12
12
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
00
00
00
00
30
30
30
30
39
39
39
39
4B
4B
4B
4B
80
80
80
80
14
14
14
14
Internet Data Sheet
Product Type
HYS64T32001HU–25F–A
HYS64T64020HU–25F–A
HYS72T32000HU–25F–A
HYS72T64020HU–25F–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
49
∆T0 (DT0)
5B
5B
5B
5B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3E
3E
3E
3E
51
∆T2P (DT2P)
29
29
29
29
52
∆T3N (DT3N)
29
29
29
29
53
∆T3P.fast (DT3P fast)
36
36
36
36
54
∆T3P.slow (DT3P slow)
19
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4E
4E
4E
4E
56
∆T5B (DT5B)
17
17
17
17
57
∆T7 (DT7)
26
26
26
26
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
7F
80
91
92
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
46
Internet Data Sheet
Product Type
HYS64T32001HU–25F–A
HYS64T64020HU–25F–A
HYS72T32000HU–25F–A
HYS72T64020HU–25F–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
33
36
33
36
77
Product Type, Char 5
32
34
32
34
78
Product Type, Char 6
30
30
30
30
79
Product Type, Char 7
30
32
30
32
80
Product Type, Char 8
31
30
30
30
81
Product Type, Char 9
48
48
48
48
82
Product Type, Char 10
55
55
55
55
83
Product Type, Char 11
32
32
32
32
84
Product Type, Char 12
35
35
35
35
85
Product Type, Char 13
46
46
46
46
86
Product Type, Char 14
41
41
41
41
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
3x
3x
3x
3x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
47
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 29
Product Type
HYS64T32001HU–3–A
HYS64T64020HU–3–A
HYS72T32000HU–3–A
HYS72T64020HU–3–A
SPD Codes for PC2–5300[U/E]–444
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
61
60
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
30
30
30
30
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
10
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
03
03
03
03
23
tCK @ CLMAX -1 (Byte 18) [ns]
30
30
30
30
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
48
Internet Data Sheet
Product Type
HYS64T32001HU–3–A
HYS64T64020HU–3–A
HYS72T32000HU–3–A
HYS72T64020HU–3–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
24
45
45
45
45
50
50
50
50
30
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
31
Module Density per Rank
32
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
39
Analysis Characteristics
40
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
22
22
22
22
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
52
52
52
52
25
26
27
28
29
33
34
35
36
37
41
42
43
44
60
60
60
60
30
30
30
30
1E
1E
1E
1E
30
30
30
30
2D
2D
2D
2D
40
40
40
40
20
20
20
20
27
27
27
27
10
10
10
10
17
17
17
17
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
00
00
00
00
00
00
00
00
39
39
39
39
4B
4B
4B
4B
80
80
80
80
18
18
18
18
48
Psi(T-A) DRAM
82
82
82
82
49
∆T0 (DT0)
47
47
47
47
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
49
Internet Data Sheet
Product Type
HYS64T32001HU–3–A
HYS64T64020HU–3–A
HYS72T32000HU–3–A
HYS72T64020HU–3–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
38
38
38
38
51
∆T2P (DT2P)
29
29
29
29
52
∆T3N (DT3N)
25
25
25
25
53
∆T3P.fast (DT3P fast)
2F
2F
2F
2F
54
∆T3P.slow (DT3P slow)
19
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
44
44
44
44
56
∆T5B (DT5B)
17
17
17
17
57
∆T7 (DT7)
24
24
24
24
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
47
48
59
5A
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
50
Internet Data Sheet
Product Type
HYS64T32001HU–3–A
HYS64T64020HU–3–A
HYS72T32000HU–3–A
HYS72T64020HU–3–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
76
Product Type, Char 4
33
36
33
36
77
Product Type, Char 5
32
34
32
34
78
Product Type, Char 6
30
30
30
30
79
Product Type, Char 7
30
32
30
32
80
Product Type, Char 8
31
30
30
30
81
Product Type, Char 9
48
48
48
48
82
Product Type, Char 10
55
55
55
55
83
Product Type, Char 11
33
33
33
33
84
Product Type, Char 12
41
41
41
41
85
Product Type, Char 13
20
20
20
20
86
Product Type, Char 14
20
20
20
20
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
6x
5x
6x
5x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
51
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 30
Product Type
HYS64T32001HU–3S–A
HYS64T64020HU–3S–A
HYS72T32000HU–3S–A
HYS72T64020HU–3S–A
SPD Codes for PC2–5300[U/E]–555
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
61
60
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
30
30
30
30
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
03
03
03
03
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
52
Internet Data Sheet
Product Type
HYS64T32001HU–3S–A
HYS64T64020HU–3S–A
HYS72T32000HU–3S–A
HYS72T64020HU–3S–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
3D
3D
3D
3D
50
50
50
50
50
50
50
50
60
60
60
60
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
31
Module Density per Rank
32
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
39
Analysis Characteristics
40
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
22
22
22
22
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
52
52
52
52
48
Psi(T-A) DRAM
82
82
82
82
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
53
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
2D
2D
2D
2D
40
40
40
40
20
20
20
20
27
27
27
27
10
10
10
10
17
17
17
17
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
00
00
00
00
00
00
00
00
3C
3C
3C
3C
4B
4B
4B
4B
80
80
80
80
18
18
18
18
Internet Data Sheet
Product Type
HYS64T32001HU–3S–A
HYS64T64020HU–3S–A
HYS72T32000HU–3S–A
HYS72T64020HU–3S–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
49
∆T0 (DT0)
43
43
43
43
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
38
38
38
38
51
∆T2P (DT2P)
29
29
29
29
52
∆T3N (DT3N)
25
25
25
25
53
∆T3P.fast (DT3P fast)
2F
2F
2F
2F
54
∆T3P.slow (DT3P slow)
19
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
44
44
44
44
56
∆T5B (DT5B)
17
17
17
17
57
∆T7 (DT7)
22
22
22
22
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
74
75
86
87
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
54
Internet Data Sheet
Product Type
HYS64T32001HU–3S–A
HYS64T64020HU–3S–A
HYS72T32000HU–3S–A
HYS72T64020HU–3S–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
256MB
512MB
256MB
512MB
×64
×64
×72
×72
1 Rank (×8)
2 Ranks (×8) 1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
33
36
33
36
77
Product Type, Char 5
32
34
32
34
78
Product Type, Char 6
30
30
30
30
79
Product Type, Char 7
30
32
30
32
80
Product Type, Char 8
31
30
30
30
81
Product Type, Char 9
48
48
48
48
82
Product Type, Char 10
55
55
55
55
83
Product Type, Char 11
33
33
33
33
84
Product Type, Char 12
53
53
53
53
85
Product Type, Char 13
41
41
41
41
86
Product Type, Char 14
20
20
20
20
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
3x
5x
3x
5x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
55
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 31
Product Type
HYS64T16000HU–3.7–A
HYS64T32001HU–3.7–A
HYS72T32000HU–3.7–A
HYS64T64020HU–3.7–A
SPD Codes for PC2–4200[U/E]–444
Organization
128MB
256MB
256MB
512MB
×64
×64
×72
×64
1 Rank (×16) 1 Rank (×8)
1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–
4200E–444
PC2–
4200U–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Rev. 1.2
Byte#
HEX
HEX
HEX
HEX
Description
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0D
0D
0D
0D
4
Number of Column Addresses
09
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
61
6
Data Width
40
40
48
40
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
3D
3D
3D
3D
50
50
50
50
11
Error Correction Support (non-ECC, ECC)
00
00
02
00
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
10
08
08
08
14
Error Checking SDRAM Width
00
00
08
00
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
00
00
00
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
01
01
01
03
10
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
56
Internet Data Sheet
Product Type
HYS64T16000HU–3.7–A
HYS64T32001HU–3.7–A
HYS72T32000HU–3.7–A
HYS64T64020HU–3.7–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
512MB
×64
×64
×72
×64
1 Rank (×16) 1 Rank (×8)
1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–
4200E–444
PC2–
4200U–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
3D
3D
3D
3D
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
2D
31
Module Density per Rank
20
40
40
40
32
25
25
25
25
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
00
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
45
50
50
50
50
60
60
60
60
3C
3C
3C
3C
28
1E
1E
1E
3C
3C
3C
3C
37
37
37
37
10
10
10
10
22
22
22
22
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
4B
4B
4B
4B
80
80
80
80
1E
1E
1E
1E
28
28
28
28
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
56
55
55
55
48
Psi(T-A) DRAM
7A
82
82
82
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
57
Internet Data Sheet
Product Type
HYS64T16000HU–3.7–A
HYS64T32001HU–3.7–A
HYS72T32000HU–3.7–A
HYS64T64020HU–3.7–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
512MB
×64
×64
×72
×64
1 Rank (×16) 1 Rank (×8)
1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–
4200E–444
PC2–
4200U–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
49
∆T0 (DT0)
33
37
37
37
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
29
2B
2B
2B
51
∆T2P (DT2P)
1F
21
21
21
52
∆T3N (DT3N)
1B
1D
1D
1D
53
∆T3P.fast (DT3P fast)
25
28
28
28
54
∆T3P.slow (DT3P slow)
13
14
14
14
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
2E
2C
2C
2C
56
∆T5B (DT5B)
14
15
15
15
57
∆T7 (DT7)
23
21
21
21
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
11
11
11
12
63
Checksum of Bytes 0-62
46
67
79
6C
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
36
74
Product Type, Char 2
34
34
32
34
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
58
Internet Data Sheet
Product Type
HYS64T16000HU–3.7–A
HYS64T32001HU–3.7–A
HYS72T32000HU–3.7–A
HYS64T64020HU–3.7–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
512MB
×64
×64
×72
×64
1 Rank (×16) 1 Rank (×8)
1 Rank (×8)
2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–
4200E–444
PC2–
4200U–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
33
33
36
77
Product Type, Char 5
36
32
32
34
78
Product Type, Char 6
30
30
30
30
79
Product Type, Char 7
30
30
30
32
80
Product Type, Char 8
30
31
30
30
81
Product Type, Char 9
48
48
48
48
82
Product Type, Char 10
55
55
55
55
83
Product Type, Char 11
33
33
33
33
84
Product Type, Char 12
2E
2E
2E
2E
85
Product Type, Char 13
37
37
37
37
86
Product Type, Char 14
41
41
41
41
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
4x
4x
4x
2x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
59
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
TABLE 32
Product Type
HYS64T16000HU–5–A
HYS64T32001HU–5–A
HYS72T32000HU–5–A
SPD Codes for PC2–3200[U/E]–333
Organization
128MB
256MB
256MB
×64
×64
×72
1 Rank (×16)
1 Rank (×8)
1 Rank (×8)
Label Code
PC2–3200U–333
PC2–3200U–333
PC2–3200E–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
09
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
6
Data Width
40
40
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
50
50
50
10
60
60
60
11
Error Correction Support (non-ECC, ECC)
00
00
02
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
10
08
08
14
Error Checking SDRAM Width
00
00
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
00
00
00
20
DIMM Type Information
02
02
02
21
DIMM Attributes
00
00
00
22
Component Attributes
01
01
01
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
50
50
50
60
60
60
24
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03062006-0GN5-WTPW
60
Internet Data Sheet
Product Type
HYS64T16000HU–5–A
HYS64T32001HU–5–A
HYS72T32000HU–5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
×64
×64
×72
1 Rank (×16)
1 Rank (×8)
1 Rank (×8)
Label Code
PC2–3200U–333
PC2–3200U–333
PC2–3200E–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
25
30
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
28
28
28
31
Module Density per Rank
20
40
40
32
35
35
35
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
39
Analysis Characteristics
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
26
27
28
29
33
34
35
36
37
41
42
43
44
45
50
50
50
60
60
60
3C
3C
3C
28
1E
1E
3C
3C
3C
47
47
47
15
15
15
27
27
27
3C
3C
3C
28
28
28
37
37
37
4B
4B
4B
80
80
80
23
23
23
2D
2D
2D
46
PLL Relock Time
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
56
53
53
48
Psi(T-A) DRAM
7A
82
82
49
∆T0 (DT0)
2B
2F
2F
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
20
23
23
51
∆T2P (DT2P)
1F
21
21
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Internet Data Sheet
Product Type
HYS64T16000HU–5–A
HYS64T32001HU–5–A
HYS72T32000HU–5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
×64
×64
×72
1 Rank (×16)
1 Rank (×8)
1 Rank (×8)
Label Code
PC2–3200U–333
PC2–3200U–333
PC2–3200E–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
HEX
HEX
HEX
Description
52
∆T3N (DT3N)
17
19
19
53
∆T3P.fast (DT3P fast)
1E
20
20
54
∆T3P.slow (DT3P slow)
13
14
14
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
28
26
26
56
∆T5B (DT5B)
13
14
14
57
∆T7 (DT7)
20
1F
1F
58
Psi(ca) PLL
00
00
00
59
Psi(ca) REG
00
00
00
60
∆TPLL (DTPLL)
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
62
SPD Revision
11
11
11
63
Checksum of Bytes 0-62
9A
BA
CC
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
36
36
37
74
Product Type, Char 2
34
34
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
31
33
33
77
Product Type, Char 5
36
32
32
78
Product Type, Char 6
30
30
30
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
62
Internet Data Sheet
Product Type
HYS64T16000HU–5–A
HYS64T32001HU–5–A
HYS72T32000HU–5–A
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Organization
128MB
256MB
256MB
×64
×64
×72
1 Rank (×16)
1 Rank (×8)
1 Rank (×8)
Label Code
PC2–3200U–333
PC2–3200U–333
PC2–3200E–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
79
Product Type, Char 7
30
30
30
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
55
55
55
83
Product Type, Char 11
35
35
35
84
Product Type, Char 12
41
41
41
85
Product Type, Char 13
20
20
20
86
Product Type, Char 14
20
20
20
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
4x
4x
4x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
63
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
5
Package Outlines
This chapter contains the package outlines of the products.
FIGURE 6
$ % &
Package Outline Raw Card A L-DIM-240-1
0
$;
“ “
&
“
“
“
“
“
“ $
“
“
“
%
0
,1
“
'HWD LORIFR QWDFWV “ $ % &
2
Q
(
&
&PR G
X
OHV R Q
O\
%XU UP
D[ D OORZ
HG
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
64
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 7
Package Outline Raw Card C L-DIM-240-3
$ % &
0$
;
[
&
“
“ $
“
%
“
'HWD LORIFR QWD FWV “ $ % &
%XUU PD [ DOORZ
H G
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
65
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 8
¡ $ % &
Package Outline Raw Card D L-DIM-240-8
0
$;
“
“ &
“
“ “
“
“
“
$
“
“ “
%
0
,1
“
'HWD LORIFR QWDFWV
“ $ % &
%XUUP
D [ D OORZ
H G
*/'
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
66
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 9
¡ $ % &
Package Outline Raw Card E L-DIM-240-9
0
$
;
“
“
&
“ “
“ “
“
“
$
“ “
“
%
0,1
“
'HWDLOR IF R QWDFWV
“
$ % &
%XUUP
D[ D OORZ
H G
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
67
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 10
¡ $ % &
Package Outline Raw Card F L-DIM-240-6
0
$;
“
“ &
“
“ “
“
“ “ $
“
“
“
%
0
,1
“
'HWD LORIFR QWDFWV “ $ % &
%XUUP
D [ DOORZ
H G
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
68
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
FIGURE 11
¡ $ % &
Package Outline Raw Card G L-DIM-240-7
0$
;
“
“ &
“
“ “
“
“
“ $
“
“
“
%
0
,1
“ 'HWD LORIFR QWDFWV “ $ % &
%XUUP
D [ DOORZ
H G
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
69
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
6
Product Type Nomenclature
Qimonda’s nomenclature uses simple coding combined with some propriatory coding. Table 33 provides examples for module
and component product type number as well as the field number. The detailed field description together with possible values
and coding explanation is listed for modules in Table 34 and for components in Table 35.
TABLE 33
Nomenclature Fields and Examples
Example for
Field Number
1
2
3
4
5
6
7
8
9
10
11
Micro-DIMM
HYS
64
T
64/128
0
2
0
K
M
–5
–A
DDR2 DRAM
HYB
18
T
512/1G 16
0
A
C
–5
TABLE 34
DDR2 DIMM Nomenclature
Field
Description
Values
Coding
1
Qimonda Module Prefix
HYS
Constant
2
Module Data Width [bit]
64
Non-ECC
72
ECC
3
DRAM Technology
T
DDR2
4
Memory Density per I/O [Mbit];
Module Density1)
32
256 MByte
64
512 MByte
128
1 GByte
256
2 GByte
512
4 GByte
5
Raw Card Generation
0 .. 9
Look up table
6
Number of Module Ranks
0, 2, 4
1, 2, 4
7
Product Variations
0 .. 9
Look up table
8
Package, Lead-Free Status
A .. Z
Look up table
9
Module Type
D
SO-DIMM
M
Micro-DIMM
R
Registered
U
Unbuffered
F
Fully Buffered
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HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Field
Description
Values
Coding
10
Speed Grade
–2.5F
PC2–6400 5–5–5
–2.5
PC2–6400 6–6–6
11
Die Revision
–3
PC2–5300 4–4–4
–3S
PC2–5300 5–5–5
–3.7
PC2–4200 4–4–4
–5
PC2–3200 3–3–3
–A
First
–B
Second
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall
module memory density in MBytes as listed in column “Coding”.
TABLE 35
DDR2 DRAM Nomenclature
Field
Description
Values
Coding
1
Qimonda Component Prefix
HYB
Constant
2
Interface Voltage [V]
18
SSTL_18
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
256
256 Mbit
512
512 Mbit
1G
1 Gbit
2G
2 Gbit
40
×4
80
×8
16
×16
5+6
Number of I/Os
7
Product Variations
0 .. 9
Look up table
8
Die Revision
A
First
B
Second
9
10
Package, Lead-Free Status
Speed Grade
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
C
FBGA, lead-containing
F
FBGA, lead-free
–25F
DDR2-800 5-5-5
–2.5
DDR2-800 6-6-6
–3
DDR2-667 4-4-4
–3S
DDR2-667 5-5-5
–3.7
DDR2-533 4-4-4
–5
DDR2-400 3-3-3
71
Internet Data Sheet
HYS[64/72]T[16/32/64]0xxHU–[2.5/../5]–A
Unbuffered DDR2 SDRAM Modules
Table of Contents
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
3.3
3.3.1
3.3.2
3.3.3
3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Speed Grade Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Component AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
6
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
15
15
16
17
17
20
32
34
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Rev. 1.41, 2006-11
03062006-0GN5-WTPW
72
Internet Data Sheet
Edition 2006-11
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2006.
All Rights Reserved.
Legal Disclaimer
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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