Qimonda HYS72T64001HR-3S-A 240-pin registered ddr2 sdram module Datasheet

March 2007
HYS72T32000HR–[2.5/3/3S/3.7/5]–A
HYS72T64001HR–[2.5/3/3S/3.7/5]–A
HYS72T64020HR–[2.5/3/3S/3.7/5]–A
240-Pin Registered DDR2 SDRAM Modules
DDR2 SDRAM
RDIMM SDRAM
RoHS Compliant
Internet Data Sheet
Rev. 1.21
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
HYS72T32000HR–[2.5/3/3S/3.7/5]–A, HYS72T64001HR–[2.5/3/3S/3.7/5]–A, HYS72T64020HR–[2.5/3/3S/3.7/5]–A
Revision History: 2007-03, Rev. 1.21
Page
Subjects (major changes since last revision)
All
Qimonda update
All
Adapted internet edition
Previous Revision: 2005-09, Rev. 1.2
Chapter 4
SPD Codes update: Byte 49 Bit 0 = 1 (HighT_SRFEntry) for all product types
Chapter 5
Package Outlines updated
Previous Revision: 2005-06, Rev. 1.1
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qag_techdoc_rev400 / 3.2 QAG / 2006-08-07
09152006-J5FK-C565
2
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
1
Overview
This chapter gives an overview of the 240-pin Registered DDR2 SDRAM Modules product family and describes its main
characteristics.
1.1
Features
• Programmable CAS Latencies (3, 4, 5 & 6), Burst Length
(4 & 8) and Burst Type
• Auto Refresh (CBR) and Self Refresh
• All inputs and outputs SSTL_18 compatible
• Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT)
• Serial Presence Detect with E2PROM
• RDIMM Dimensions (nominal): 30 mm high, 133.35 mm
wide
• Based on Standard reference layouts Raw Card “A-F”, “BG” & “C-H”
• RoHS compliant products1)
• 240-pin PC2-6400, PC2-5300, PC2-4200 and PC2-3200
DDR2 SDRAM memory modules for PC, Workstation and
Server main memory applications
• One rank 32M x 72, 64M x 72 and two ranks 64M × 72
module organization and 32M × 8, 64M × 4 chip
organization
• Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
• All Speed Grades faster than DDR2–400 comply with
DDR2–400 timing specifications
• Built with 256-Mbit DDR2 SDRAMs in P-TFBGA-60
chipsize packages.
TABLE 1
Performance for –2.5 & –3 (S)
Product Type Speed Code
–2.5
–3
–3S
Unit
Speed Grade
PC2–6400 6–6–6
PC2–5300 4–4–4
PC2–5300 5–5–5
—
400
333
333
333
333
333
MHz
266
333
266
MHz
200
200
200
MHz
15
12
15
ns
15
12
15
ns
45
45
45
ns
60
57
60
ns
max. Clock Frequency
@CL6
@CL5
@CL4
@CL3
min. RAS-CAS-Delay
min. Row Precharge Time
min. Row Active Time
min. Row Cycle Time
fCK6
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.21, 2007-03
09152006-J5FK-C565
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 2
Performance for DDR2-533 and DDR2-400
Product Type Speed Code
–3.7
–5
Units
Speed Grade
PC2–4200 4–4–4
PC2–3200 3–3–3
—
266
200
MHz
266
200
MHz
200
200
MHz
15
15
ns
15
15
ns
45
40
ns
60
55
ns
Max. Clock Frequency
@CL5
@CL4
@CL3
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
Rev. 1.21, 2007-03
09152006-J5FK-C565
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
4
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
1.2
Description
devices and a PLL for the clock distribution. This reduces
capacitive loading to the system bus, but adds one cycle to
the SDRAM timing. Decoupling capacitors are mounted on
the PCB board. The DIMMs feature serial presence detect
based on a serial E2PROM device using the 2-pin I2C
protocol. The first 128 bytes are programmed with
configuration data and are write-protected; the second
128 bytes are available to the customer.
The QIMONDA HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
module family are Registered DIMM modules “RDIMMs” with
30 mm height based on DDR2 technology. DIMMs are
available as ECC modules in 32M x 72 (256 MByte) and
64M x 72 (512 MByte) organization and density, intended for
mounting into 240-pin connector sockets.
The memory array is designed with 256-Mbit Double-DataRate-Two (DDR2) Synchronous DRAMs. All control and
address signals are re-driven on the DIMM using register
TABLE 3
Ordering Information for RoHS Compliant Products
Product Type1)
Compliance Code2)
Description
SDRAM Technology
HYS72T32000HR–2.5–A
256 MB 1R×8 PC2–6400R–666–12–F0
1 Rank, ECC
256 Mbit (×8)
HYS72T64001HR–2.5–A
512 MB 1R×4 PC2–6400R–666–12–H0
1 Rank, ECC
256 Mbit (×4)
HYS72T64020HR–2.5–A
512 MB 2R×8 PC2–6400R–666–12–G0
2 Rank, ECC
256 Mbit (×8)
PC2-6400
PC2-5300
HYS72T32000HR–3–A
256 MB 1R×8 PC2–5300R–444–12–F0
1 Rank, ECC
256 Mbit (×8)
HYS72T64001HR–3–A
512 MB 1R×4 PC2–5300R–444–12–H0
1 Rank, ECC
256 Mbit (×4)
HYS72T64020HR–3–A
512 MB 2R×8 PC2–5300R–444–12–G0
2 Rank, ECC
256 Mbit (×8)
HYS72T32000HR–3S–A
256 MB 1R×8 PC2–5300R–555–12–F0
1 Rank, ECC
256 Mbit (×8)
HYS72T64001HR–3S–A
512 MB 1R×4 PC2–5300R–555–12–H0
1 Rank, ECC
256 Mbit (×4)
HYS72T64020HR–3S–A
512 MB 2R×8 PC2–5300R–555–12–G0
2 Rank, ECC
256 Mbit (×8)
HYS72T32000HR–3.7–A
256 MB 1R×8 PC2–4200R–444–11–F0
1 rank, ECC
256 Mbit (×8)
HYS72T64001HR–3.7–A
512 MB 1R×4 PC2–4200R–444–11–H0
1 rank, ECC
256 Mbit (×4)
HYS72T64020HR–3.7–A
512 MB 2R×8 PC2–4200R–444–11–G0
2 rank, ECC
256 Mbit (×8)
PC2–4200
PC2-3200
HYS72T32000HR–5–A
256 MB 1R×8 PC2–3200R–333–11–F0
1 Rank, ECC
256 Mbit (×8)
HYS72T64001HR–5–A
512 MB 1R×4 PC2–3200R–333–11–H0
1 Rank, ECC
256 Mbit (×4)
HYS72T64020HR–5–A
512 MB 2R×8 PC2–3200R–333–11–G0
2 Rank, ECC
256 Mbit (×8)
1) All part numbers end with a place code, designating the silicon die revision. Example: HYS72T32000HR–5–A, indicating Rev. “A” dies are
used for DDR2 SDRAM components. For all QIMONDA DDR2 module and component nomenclature see Chapter 6 of this data sheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200R–444–11–F0”, where
4200R means Registered DIMM modules with 4.26 GB/sec Module Bandwidth and “444-11” means Column Address Strobe (CAS) latency
= 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.1 and produced
on the Raw Card “F”
Rev. 1.21, 2007-03
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 4
Address Format
DIMM
Density
Module
Organization
Memory
Ranks
ECC/
Non-ECC
# of
SDRAMs
# of row/bank/columns bits
Raw Card
256 MB
32M ×72
512 MB
64M ×72
1
ECC
9
13/2/10
A-F
1
ECC
18
13/2/11
C-H
512 MB
64M ×72
2
ECC
18
13/2/10
B-G
TABLE 5
Components on Modules
Product Type1)
DRAM Components1)
DRAM Density
DRAM Organization
Note2)
HYS72T32000HR
HYB18T256800AF
256 Mbit
32M × 8
—
HYS72T64001HR
HYB18T256400AF
256 Mbit
64M × 4
—
HYS72T64020HR
HYB18T256800AF
256 Mbit
32M × 8
—
1) Green Product
2) For a detailed description of all available functions of the DRAM components on these modules see the component data sheet.
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
2
Pin Configuration
and Table 8 respectively. The pin numbering is depicted in
Figure 1.
The pin configuration of the Registered DDR2 SDRAM DIMM
is listed by function in Table 6 (240 pins). The abbreviations
used in columns Pin and Buffer Type are explained in Table 7
TABLE 6
Pin Configuration of RDIMM
Ball No.
Name
Pin
Type
Buffer
Type
Function
185
CK0
I
SSTL
Clock Signal CK0, Complementary Clock Signal CK0
186
CK0
I
SSTL
52
CKE0
I
SSTL
171
CKE1
I
SSTL
NC
NC
—
Not Connected
Note: 1-Rank module
193
S0
I
SSTL
76
S1
I
SSTL
Chip Select Rank 1:0
Note: 2-Ranks module
NC
NC
—
Not Connected
Note: 1-Rank module
192
RAS
I
SSTL
74
CAS
I
SSTL
Row Address Strobe (RAS), Column Address Strobe (CAS), Write
Enable (WE)
73
WE
I
SSTL
18
RESET
I
CMOS
Register Reset
71
BA0
I
SSTL
Bank Address Bus 1:0
190
BA1
I
SSTL
54
BA2
I
SSTL
Bank Address Bus 2
Greater than 512Mb DDR2 SDRAMS
NC
I
SSTL
Not Connected
Less than 1Gb DDR2 SDRAMS
Clock Signals
Clock Enables 1:0
Note: 2-Ranks module
Control Signals
Address Signals
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
188
A0
I
SSTL
Address Bus 12:0, Address Signal 10/AutoPrecharge
183
A1
I
SSTL
63
A2
I
SSTL
182
A3
I
SSTL
61
A4
I
SSTL
60
A5
I
SSTL
180
A6
I
SSTL
58
A7
I
SSTL
179
A8
I
SSTL
177
A9
I
SSTL
70
A10
I
SSTL
AP
I
SSTL
57
A11
I
SSTL
176
A12
I
SSTL
196
A13
I
SSTL
Address Signal 13
NC
NC
—
Not Connected
Note: Non CA parity modules based on 256 Mbit component
A14
I
SSTL
Address Signal 14
Note: CA Parity module
NC
NC
—
Not Connected
Note: Non CA parity module. Less than 1 GBit per DRAM die.
A15
I
SSTL
Address Signal 14
Note: CA Parity module
NC
NC
—
Not Connected
Note: Non CA parity module. Less than 1 GBit per DRAM die.
174
173
Rev. 1.21, 2007-03
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
Data Bus 63:0
Data Input/Output pins
Data Signals
3
DQ0
I/O
SSTL
4
DQ1
I/O
SSTL
9
DQ2
I/O
SSTL
10
DQ3
I/O
SSTL
122
DQ4
I/O
SSTL
123
DQ5
I/O
SSTL
128
DQ6
I/O
SSTL
129
DQ7
I/O
SSTL
12
DQ8
I/O
SSTL
13
DQ9
I/O
SSTL
21
DQ10
I/O
SSTL
22
DQ11
I/O
SSTL
131
DQ12
I/O
SSTL
132
DQ13
I/O
SSTL
140
DQ14
I/O
SSTL
141
DQ15
I/O
SSTL
24
DQ16
I/O
SSTL
25
DQ17
I/O
SSTL
30
DQ18
I/O
SSTL
31
DQ19
I/O
SSTL
143
DQ20
I/O
SSTL
144
DQ21
I/O
SSTL
149
DQ22
I/O
SSTL
150
DQ23
I/O
SSTL
33
DQ24
I/O
SSTL
34
DQ25
I/O
SSTL
39
DQ26
I/O
SSTL
40
DQ27
I/O
SSTL
152
DQ28
I/O
SSTL
153
DQ29
I/O
SSTL
158
DQ30
I/O
SSTL
159
DQ31
I/O
SSTL
80
DQ32
I/O
SSTL
81
DQ33
I/O
SSTL
86
DQ34
I/O
SSTL
87
DQ35
I/O
SSTL
199
DQ36
I/O
SSTL
200
DQ37
I/O
SSTL
205
DQ38
I/O
SSTL
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
206
DQ39
I/O
SSTL
Data Bus 63:0
89
DQ40
I/O
SSTL
90
DQ41
I/O
SSTL
95
DQ42
I/O
SSTL
96
DQ43
I/O
SSTL
208
DQ44
I/O
SSTL
209
DQ45
I/O
SSTL
214
DQ46
I/O
SSTL
215
DQ47
I/O
SSTL
98
DQ48
I/O
SSTL
99
DQ49
I/O
SSTL
107
DQ50
I/O
SSTL
108
DQ51
I/O
SSTL
217
DQ52
I/O
SSTL
218
DQ53
I/O
SSTL
226
DQ54
I/O
SSTL
227
DQ55
I/O
SSTL
110
DQ56
I/O
SSTL
111
DQ57
I/O
SSTL
116
DQ58
I/O
SSTL
117
DQ59
I/O
SSTL
229
DQ60
I/O
SSTL
230
DQ61
I/O
SSTL
235
DQ62
I/O
SSTL
236
DQ63
I/O
SSTL
42
CB0
I/O
SSTL
43
CB1
I/O
SSTL
48
CB2
I/O
SSTL
49
CB3
I/O
SSTL
161
CB4
I/O
SSTL
162
CB5
I/O
SSTL
167
CB6
I/O
SSTL
168
CB7
I/O
SSTL
Check Bits
Rev. 1.21, 2007-03
09152006-J5FK-C565
Check Bits 7:0
Check Bit Input / Output pins
Note: NC on Non-ECC module
10
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
Data Strobes 17:0
Data Strobe Bus
7
DQS0
I/O
SSTL
6
DQS0
I/O
SSTL
16
DQS1
I/O
SSTL
15
DQS1
I/O
SSTL
28
DQS2
I/O
SSTL
27
DQS2
I/O
SSTL
37
DQS3
I/O
SSTL
36
DQS3
I/O
SSTL
84
DQS4
I/O
SSTL
83
DQS4
I/O
SSTL
93
DQS5
I/O
SSTL
92
DQS5
I/O
SSTL
105
DQS6
I/O
SSTL
104
DQS6
I/O
SSTL
114
DQS7
I/O
SSTL
113
DQS7
I/O
SSTL
46
DQS8
I/O
SSTL
45
DQS8
I/O
SSTL
125
DQS9
I/O
SSTL
126
DQS9
I/O
SSTL
134
DQS10
I/O
SSTL
135
DQS10
I/O
SSTL
146
DQS11
I/O
SSTL
147
DQS11
I/O
SSTL
155
DQS12
I/O
SSTL
156
DQS12
I/O
SSTL
202
DQS13
I/O
SSTL
203
DQS13
I/O
SSTL
211
DQS14
I/O
SSTL
212
DQS14
I/O
SSTL
223
DQS15
I/O
SSTL
224
DQS15
I/O
SSTL
232
DQS16
I/O
SSTL
233
DQS16
I/O
SSTL
164
DQS17
I/O
SSTL
165
DQS17
I/O
SSTL
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
125
DM0
I
SSTL
134
DM1
I
SSTL
Data Masks 8:0
Note: ×8 based module
146
DM2
I
SSTL
155
DM3
I
SSTL
202
DM4
I
SSTL
211
DM5
I
SSTL
223
DM6
I
SSTL
232
DM7
I
SSTL
164
DM8
I
SSTL
120
SCL
I
CMOS
Serial Bus Clock
119
SDA
I/O
OD
Serial Bus Data
239
SA0
I
CMOS
Serial Address Select Bus 2:0
240
SA1
I
CMOS
101
SA2
I
CMOS
Data Mask
EEPROM
Parity
55
ERR_OUT
O
CMOS
PAR_IN
I
CMOS
VREF
VDDSPD
VDDQ
AI
—
I/O Reference Voltage
PWR
—
EEPROM Power Supply
PWR
—
I/O Driver Power Supply
53, 59, 64, 67, 69, VDD
172, 178, 184, 187,
189, 197
PWR
—
Power Supply
2, 5, 8, 11, 14, 17, VSS
20, 23, 26, 29, 32,
35, 38, 41, 44, 47,
50, 65, 66, 79, 82,
85, 88, 91, 94, 97,
100, 103, 106, 109,
112, 115, 118, 121,
124, 127, 130, 133,
136, 139, 142, 145,
148, 151, 154, 157,
160, 163, 166, 169,
198, 201, 204, 207,
210, 213, 216, 219,
222, 225, 228, 231,
234, 237
GND
—
Ground Plane
Parity bits
Power Supplies
1
238
51, 56, 62, 72, 75,
78, 170, 175, 181,
191, 194
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HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Ball No.
Name
Pin
Type
Buffer
Type
Function
NC
19, 55, 68, 102,
137, 138, 173, 220,
221
NC
—
Not connected
195
ODT0
I
SSTL
77
ODT1
I
SSTL
On-Die Termination Control 1:0
Note: 2-Ranks module
NC
NC
—
Other Pins
Note: 1-Rank modules
TABLE 7
Abbreviations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminated Logic (SSTL_18)
CMOS
CMOS Levels
OD
Open Drain. The corresponding pin has 2 operational states, active low and tristate,
and allows multiple devices to share as a wire-OR.
TABLE 8
Abbreviations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NU
Not Usable
NC
Not Connected
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
FIGURE 1
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09152006-J5FK-C565
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0337
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3
Electrical Characteristics
This chapter lists the electrical characteristics.
3.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 9 at any time.
TABLE 9
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Rating
Unit
Note
Min.
Max.
Voltage on VDD pin relative to VSS
–1.0
+2.3
V
1)
Voltage on VDDQ pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on VDDL pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on any pin relative to VSS
–0.5
+2.3
V
1)
°C
1)2)
Storage Temperature
–55
+100
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 10
DRAM Component Operating Temperature Range
Symbol
TOPER
Parameter
Rating
Operating Temperature
Min.
Max.
0
95
Unit
Note
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50 %
Rev. 1.21, 2007-03
09152006-J5FK-C565
15
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.2
DC Operating Conditions
This chapter contains the DC operating conditions tables.
TABLE 11
Operating Conditions
Parameter
Symbol
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
TOPR
TCASE
TSTG
PBar
HOPR
Values
Unit
Note
Min.
Max.
0
+65
°C
—
0
+95
°C
1)2)3)4)
– 50
+100
°C
—
+69
+105
kPa
5)
10
90
%
—
1)
2)
3)
4)
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs
When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50 %.
5) Up to 3000 m.
TABLE 12
Supply Voltage Levels and DC Operating Conditions
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
Symbol
VDD
VDDQ
VREF
VDDSPD
VIH(DC)
VIL (DC)
IL
Values
Unit
Note
Min.
Typ.
Max.
1.7
1.8
1.9
V
—
1.7
1.8
1.9
V
1)
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
2)
1.7
—
3.6
V
—
VREF + 0.125
—
V
—
– 0.30
—
VDDQ + 0.3
VREF – 0.125
V
—
In / Output Leakage Current
–5
—
5
µA
1) Under all conditions, VDDQ must be less than or equal to VDD
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ.
3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
Rev. 1.21, 2007-03
09152006-J5FK-C565
16
3)
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.3
AC Characteristics
This chapter describes the AC characteristics.
3.3.1
Speed Grades Definitions
This chapter contains the Speed Grades Definitions tables.
TABLE 13
Speed Grade Definition Speed Bins for DDR2–800E
Speed Grade
DDR2–800E
QAG Sort Name
–2.5
CAS-RCD-RP latencies
6–6–6
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
@ CL = 6
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
—
tCK
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
ns
1)2)3)4)
3.75
8
ns
1)2)3)4)
3
8
ns
1)2)3)4)
2.5
8
ns
1)2)3)4)
45
70000
ns
1)2)3)4)5)
60
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.21, 2007-03
09152006-J5FK-C565
17
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 14
Speed Grade Definition Speed Bins for DDR2–667
Speed Grade
DDR2–667C
DDR2–667D
QAG Sort Name
–3
–3S
CAS-RCD-RP latencies
4–4–4
5–5–5
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3
8
3.75
8
ns
1)2)3)4)
3
8
3
8
ns
1)2)3)4)
45
70000
45
70000
ns
1)2)3)4)5)
57
—
60
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) .
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
TABLE 15
Speed Grade Definition Speed Bins for DDR2-533 and DDR2-400
Speed Grade
DDR2–533C
QAG Sort Name
–3.7
CAS-RCD-RP latencies
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
–5
4–4–4
Parameter
Clock Frequency
DDR2–400B
tCK
3–3–3
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3.75
8
5
8
ns
1)2)3)4)
3.75
8
5
8
ns
1)2)3)4)
45
70000
40
70000
ns
1)2)3)4)5)
60
—
55
—
ns
1)2)3)4)
15
—
15
—
ns
1)2)3)4)
15
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0) .
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.21, 2007-03
09152006-J5FK-C565
18
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.3.2
AC Timing Parameters
This chapter contains the AC Timing Parameters.
TABLE 16
Timing Parameter by Speed Grade - DDR2–800
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
tAC
DQS output access time from CK / CK
tDQSCK
Average clock high pulse width
tCH.AVG
Average clock low pulse width
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
tDIPW
DQ and DM input pulse width for each input
Data-out high-impedance time from CK / CK
tHZ
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
DQ output access time from CK / CK
Min.
Max.
–400
+400
ps
–350
+350
ps
9)
10)11)
9)
0.48
0.52
0.48
0.52
tCK.AVG
tCK.AVG
2500
8000
ps
10)11)
50
—
ps
12)13)14)
125
—
ps
12)13)15)
0.6
—
0.35
—
tCK.AVG —
tCK.AVG —
—
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
tAC.MAX
ps
9)16)
—
200
ps
17)
Min (tCH.ABS,
tCL.ABS)
__
ps
18)
—
300
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL – 1
DQ hold skew factor
tAC.MIN
2 x tAC.MIN
nCK
—
– 0.25
+ 0.25
tCK.AVG
21)
tDQSH
tDQSL
tDSS
tDSH
tWPST
tWPRE
tLS.BASE
tLH.BASE
tRPRE
tRPST
tRAS
tRRD
0.35
—
—
0.35
—
tRRD
DQS latching rising transition to associated clock tDQSS
edges
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Write postamble
Write preamble
Address and control input setup time
Address and control input hold time
Read preamble
Read postamble
Active to precharge command
Active to active command period for 1KB page
size products
Active to active command period for 2KB page
size products
Rev. 1.21, 2007-03
09152006-J5FK-C565
10)11)
19
0.2
—
0.2
—
0.4
0.6
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
175
—
ps
22)23)
250
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
45
70000
ns
28)
7.5
—
ns
28)
10
—
ns
28)
—
21)
21)
—
—
25)27)
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
Four Activate Window for 1KB page size products tFAW
35
—
ns
28)
Four Activate Window for 2KB page size products tFAW
45
—
ns
28)
tCCD
tWR
Write recovery time
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
Internal Read to Precharge command delay
tRTP
Exit self-refresh to a non-read command
tXSNR
Exit self-refresh to read command
tXSRD
Exit precharge power-down to any valid
tXP
2
—
nCK
—
15
—
ns
28)
WR + tnRP
—
nCK
29)30)
7.5
—
ns
28)31)
7.5
—
ns
28)
tRFC +10
—
ns
28)
200
—
nCK
—
2
—
nCK
—
tXARD
tXARDS
2
—
nCK
—
8 – AL
—
nCK
—
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
32)
ODT turn-on delay
tAOND
tAON
tAONPD
2
2
nCK
—
tAC.MIN
tAC.MIN + 2
tAC.MAX + 0.7
2 x tCK.AVG +
tAC.MAX + 1
ns
9)33)
ns
—
tAOFD
tAOF
tAOFPD
2.5
2.5
nCK
—
tAC.MIN
tAC.MIN + 2
tAC.MAX + 0.6
ns
2.5 x tCK.AVG + ns
tAC.MAX + 1
—
tANPD
tAXPD
tMRD
tMOD
tOIT
tDELAY
3
––
—
CAS to CAS command delay
command (other than NOP or Deselect)
Exit power down to read command
Exit active power-down mode to read command
(slow exit, lower power)
ODT turn-on
ODT turn-on (Power down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power down mode)
ODT to power down entry latency
ODT to power down exit latency
Mode register set command cycle time
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
8
nCK
34)35)
nCK
—
2
—
nCK
—
0
12
ns
28)
0
12
ns
28)
tLS + tCK .AVG + ––
tLH
ns
—
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
Rev. 1.21, 2007-03
09152006-J5FK-C565
20
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 2.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 2.
16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under
the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 3.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 3.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 1 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
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Registered DDR2 SDRAM Modules
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support
tnRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.
29) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
30) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
31) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
32) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
33) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from tAOND.
34) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD.
35) When the device is operated with input clock jitter, this parameter needs to be derated by {–tJIT.DUTY.MAX – tERR(6-10PER).MAX} and {–tJIT.DUTY.MIN
– tERR(6-10PER).MIN } of the actual input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter
into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272 ps, tERR(6- 10PER).MAX = + 293 ps, tJIT.DUTY.MIN = – 106 ps and tJIT.DUTY.MAX = + 94 ps,
then tAOF.MIN(DERATED) = tAOF.MIN + {– tJIT.DUTY.MAX – tERR(6-10PER).MAX} = – 450 ps + {– 94 ps – 293 ps} = – 837 ps and tAOF.MAX(DERATED) = tAOF.MAX
+ {– tJIT.DUTY.MIN – tERR(6-10PER).MIN} = 1050 ps + {106 ps + 272 ps} = + 1428 ps. (Caution on the MIN/MAX usage!)
TABLE 17
Timing Parameter by Speed Grade - DDR2–667
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
tAC
DQS output access time from CK / CK
tDQSCK
Average clock high pulse width
tCH.AVG
Average clock low pulse width
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
DQ and DM input pulse width for each input
tDIPW
tHZ
Data-out high-impedance time from CK / CK
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
DQ output access time from CK / CK
Min.
Max.
–450
+450
ps
–400
+400
ps
9)
10)11)
9)
0.48
0.52
0.48
0.52
tCK.AVG
tCK.AVG
3000
8000
ps
—
100
—
ps
12)13)14)
175
—
ps
13)14)15)
0.6
—
0.35
—
tCK.AVG —
tCK.AVG —
—
ps
9)16)
tAC.MIN
2 x tAC.MIN
tAC.MAX
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
—
240
ps
17)
Min (tCH.ABS,
tCL.ABS)
__
ps
18)
—
340
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL–1
nCK
—
DQ hold skew factor
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HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
– 0.25
+ 0.25
tCK.AVG
21)
tDQSH
tDQSL
tDSS
tDSH
tWPST
tWPRE
tLS.BASE
tLH.BASE
tRPRE
tRPST
tRAS
tRRD
0.35
—
—
0.35
—
tRRD
DQS latching rising transition to associated clock tDQSS
edges
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
200
—
ps
22)23)
275
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
45
70000
ns
28)
7.5
—
ns
28)
10
—
ns
28)
Four Activate Window for 1KB page size products tFAW
37.5
—
ns
28)
Four Activate Window for 2KB page size products tFAW
50
—
ns
28)
CAS to CAS command delay
tCCD
tWR
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
Internal Read to Precharge command delay
tRTP
Exit self-refresh to a non-read command
tXSNR
Exit self-refresh to read command
tXSRD
Exit precharge power-down to any valid
tXP
2
—
nCK
—
Write recovery time
15
—
ns
28)
WR + tnRP
—
nCK
29)30)
7.5
—
ns
28)31)
7.5
—
ns
28)
tRFC +10
—
ns
28)
200
—
nCK
—
2
—
nCK
—
tXARD
tXARDS
2
—
nCK
—
7 – AL
—
nCK
—
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
32)
ODT turn-on delay
tAOND
tAON
tAONPD
2
2
nCK
—
tAC.MIN
tAC.MIN + 2
tAC.MAX + 0.7
2 x tCK.AVG +
tAC.MAX + 1
ns
9)33)
ns
—
tAOFD
tAOF
tAOFPD
2.5
2.5
nCK
—
tAC.MIN
tAC.MIN + 2
tAC.MAX + 0.6
ns
2.5 x tCK.AVG + ns
tAC.MAX + 1
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CK setup time
DQS falling edge hold time from CK
Write postamble
Write preamble
Address and control input setup time
Address and control input hold time
Read preamble
Read postamble
Active to precharge command
Active to active command period for 1KB page
size products
Active to active command period for 2KB page
size products
0.2
—
0.2
—
0.4
0.6
—
21)
21)
—
—
25)27)
command (other than NOP or Deselect)
Exit power down to read command
Exit active power-down mode to read command
(slow exit, lower power)
ODT turn-on
ODT turn-on (Power down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power down mode)
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
ODT to power down entry latency
ODT to power down exit latency
Mode register set command cycle time
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tANPD
tAXPD
tMRD
tMOD
tOIT
tDELAY
Min.
Max.
3
––
8
nCK
—
nCK
—
2
—
nCK
—
0
12
ns
28)
0
12
ns
28)
tLS + tCK .AVG + ––
tLH
ns
—
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 2.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 2.
16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
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HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under
the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 3.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 3.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 1 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support
tnRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.
29) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
30) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
31) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
32) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
33) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measured from tAOND.
34) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD.
35) When the device is operated with input clock jitter, this parameter needs to be derated by {–tJIT.DUTY.MAX – tERR(6-10PER).MAX} and {–tJIT.DUTY.MIN
– tERR(6-10PER).MIN } of the actual input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter
into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272 ps, tERR(6- 10PER).MAX = + 293 ps, tJIT.DUTY.MIN = – 106 ps and tJIT.DUTY.MAX = + 94 ps,
then tAOF.MIN(DERATED) = tAOF.MIN + {– tJIT.DUTY.MAX – tERR(6-10PER).MAX} = – 450 ps + {– 94 ps – 293 ps} = – 837 ps and tAOF.MAX(DERATED) = tAOF.MAX
+ {– tJIT.DUTY.MIN – tERR(6-10PER).MIN} = 1050 ps + {106 ps + 272 ps} = + 1428 ps. (Caution on the MIN/MAX usage!)
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
FIGURE 2
Method for calculating transitions and endpoint
92+[P9
977[P9
92+[P9
977[P9
W/=
W+=
W535(EHJLQSRLQW
W5367
H
QGSRLQW
92/[P9
977[P9
92/[P9
977[P9
7 7
7 7
W+=W5367
HQGSRLQW 77
W/=W535(
E HJLQSRLQW 7
7
FIGURE 3
Differential input waveform timing - tDS and tDS
'46
'46
W'6
W'+
W'6
W'+
9''4
9,+ DF PL
Q
9,+ GF PL
Q
95() GF 9,/ GF PD
[
[
9,/ DF PD
966
FIGURE 4
Differential input waveform timing - tlS and tlH
&.
&.
W,6
W,6
W,+
W,+
9''4
9,+DF PLQ
9,+GF PLQ
95() GF 9,/ GF PD[
9,/ DF PD[
966
Rev. 1.21, 2007-03
09152006-J5FK-C565
26
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 18
Timing Parameter by Speed Grade - DDR2–533
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tAC
tCCD
tCH
tCKE
tCL
tDAL
–500
+500
ps
—
2
—
—
0.45
0.55
3
—
0.45
0.55
WR + tRP
—
tCK
tCK
tCK
tCK
tCK
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tDELAY
tIS + tCK + tIH
—
ns
9)
DQ and DM input hold time (differential data
strobe)
tDH(base)
225
—
ps
10)
–25
—
ps
11)
tDIPW
tDQSCK
tDQSL,H
tDQSQ
0.35
—
tCK
—
–450
+450
ps
—
0.35
—
tCK
—
—
300
ps
11)
tDQSS
tDS(base)
– 0.25
+ 0.25
tCK
—
100
—
ps
11)
–25
—
ps
11)
tDSH
0.2
—
tCK
—
DQS falling edge to CK setup time (write cycle) tDSS
0.2
—
tCK
—
37.5
—
ns
—
50
—
ns
13)
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
DQ and DM input hold time (single ended data tDH1(base)
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended data tDS1(base)
strobe)
DQS falling edge hold time from CK (write
cycle)
Four Activate Window period
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Rev. 1.21, 2007-03
09152006-J5FK-C565
tFAW
tHP
tHZ
tIH(base)
tIPW
27
—
—
8)18)
12)
MIN. (tCL, tCH)
tIS(base)
tLZ(DQ)
tLZ(DQS)
tMRD
tOIT
tQH
—
—
tAC.MAX
ps
13)
375
—
ps
11)
0.6
—
tCK
—
250
—
ps
11)
2 × tAC.MIN
ps
14)
tAC.MIN
tAC.MAX
tAC.MAX
ps
14)
2
—
tCK
—
0
12
ns
—
tHP –tQHS
—
—
—
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Data hold skew factor
Average periodic refresh Interval
tQHS
tREFI
Min.
Max.
—
400
ps
—
—
7.8
µs
14)15)
—
3.9
µs
16)18)
Auto-Refresh to Active/Auto-Refresh
command period
tRFC
75
—
ns
17)
Precharge-All (4 banks) command period
tRP
tRP
tRPRE
tRPST
tRRD
tRP + 1tCK
15 + 1tCK
—
ns
—
—
ns
—
0.9
1.1
14)
0.40
0.60
tCK
tCK
7.5
—
ns
14)18)
10
—
ns
16)20)
tRTP
tWPRE
tWPST
tWR
7.5
—
ns
—
0.25 x tCK
—
—
0.40
0.60
tCK
tCK
15
—
ns
—
Write recovery time for write with AutoPrecharge
WR
tWR/tCK
tCK
20)
Internal Write to Read command delay
tWTR
tXARD
7.5
—
ns
21)
2
—
tCK
22)
Exit active power-down mode to Read
command (slow exit, lower power)
tXARDS
6 – AL
—
tCK
22)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
tCK
—
Exit Self-Refresh to non-Read command
tXSNR
tXSRD
tRFC +10
—
ns
—
200
—
tCK
—
Precharge-All (8 banks) command period
Read preamble
Read postamble
Active bank A to Active bank B command
period
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without AutoPrecharge
Exit power down to any valid command
(other than NOP or Deselect)
Exit Self-Refresh to Read command
14)
19)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to
the WR parameter stored in the MR.
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.
10) For timing definition, refer to the Component data sheet.
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate
mis-match between DQS / DQS and associated DQ in any given cycle.
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can
be greater than the minimum specification limits for tCL and tCH).
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HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These
parameters are verified by design and characterization, but not subject to production test.
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C
and 95 °C.
15) 0 °C≤ TCASE ≤ 85 °C
16) 85 °C < TCASE ≤ 95 °C
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 3 “Ordering Information for RoHS
Compliant Products” on Page 5.
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK
refers to the application clock period. WR refers to the WR parameter stored in the MRS.
21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.
22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow
power-down exit timing tXARDS has to be satisfied.
TABLE 19
Timing Parameter by Speed Grade - DDR2-400
Parameter
Symbol
DDR2–400
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tAC
tCCD
tCH
tCKE
tCL
tDAL
–600
+600
ps
—
2
—
—
0.45
0.55
3
—
0.45
0.55
WR + tRP
—
tCK
tCK
tCK
tCK
tCK
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tDELAY
tIS + tCK + tIH
––
ns
9)
DQ and DM input hold time (differential data
strobe)
tDH(base)
275
––
ps
10)
–25
—
ps
11)
tDIPW
tDQSCK
tDQSL,H
tDQSQ
0.35
—
tCK
—
–500
+500
ps
—
0.35
—
tCK
—
—
350
ps
11)
tDQSS
tDS(base)
– 0.25
+ 0.25
tCK
—
150
—
ps
11)
tDS1(base)
–25
—
ps
11)
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
DQ and DM input hold time (single ended data tDH1(base)
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended
data strobe)
Rev. 1.21, 2007-03
09152006-J5FK-C565
29
—
—
—
8)22)
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–400
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tDSH
0.2
—
DQS falling edge to CK setup time (write cycle) tDSS
0.2
—
tCK
—
37.5
—
ns
—
50
—
ns
13)
DQS falling edge hold time from CK (write
cycle)
Four Activate Window period
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Average periodic refresh Interval
tFAW
tHP
tHZ
tIH(base)
tIPW
tCK
12)
MIN. (tCL, tCH)
tIS(base)
tLZ(DQ)
tLZ(DQS)
tMRD
tOIT
tQH
tQHS
tREFI
—
—
tAC.MAX
ps
13)
475
—
ps
11)
0.6
—
tCK
—
350
—
ps
11)
2 × tAC.MIN
ps
14)
tAC.MIN
tAC.MAX
tAC.MAX
ps
14)
2
—
tCK
—
0
12
ns
—
tHP –tQHS
—
—
—
—
450
ps
—
—
7.8
µs
14)15)
—
3.9
µs
16)18)
Auto-Refresh to Active/Auto-Refresh
command period
tRFC
75
—
ns
17)
Precharge-All (4 banks) command period
tRP
tRP
tRPRE
tRPST
tRRD
tRP + 1tCK
15 + 1tCK
—
ns
—
—
ns
—
0.9
1.1
14)
0.40
0.60
tCK
tCK
7.5
—
ns
14)18)
10
—
ns
16)20)
tRTP
tWPRE
tWPST
tWR
7.5
—
ns
—
0.25 x tCK
—
—
0.40
0.60
tCK
tCK
15
—
ns
—
Write recovery time for write with AutoPrecharge
WR
tWR/tCK
tCK
20)
Internal Write to Read command delay
tWTR
tXARD
10
—
ns
21)
2
—
tCK
22)
Exit active power-down mode to Read
command (slow exit, lower power)
tXARDS
6 – AL
—
tCK
22)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
tCK
—
Precharge-All (8 banks) command period
Read preamble
Read postamble
Active bank A to Active bank B command
period
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without AutoPrecharge
Exit power down to any valid command
(other than NOP or Deselect)
Rev. 1.21, 2007-03
09152006-J5FK-C565
30
14)
19)
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
DDR2–400
Unit
Note1)2)3)4)5)
6)7)
Exit Self-Refresh to non-Read command
Exit Self-Refresh to Read command
tXSNR
tXSRD
Min.
Max.
tRFC +10
—
ns
—
200
—
tCK
—
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to
the WR parameter stored in the MR.
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.
10) For timing definition, refer to the Component data sheet.
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate
mis-match between DQS / DQS and associated DQ in any given cycle.
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can
be greater than the minimum specification limits for tCL and tCH).
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These
parameters are verified by design and characterization, but not subject to production test.
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C
and 95 °C.
15) 0 °C≤ TCASE ≤ 85 °C
16) 85 °C < TCASE ≤ 95 °C
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 3 “Ordering Information for RoHS
Compliant Products” on Page 5.
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK
refers to the application clock period. WR refers to the WR parameter stored in the MRS.
21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.
22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow
power-down exit timing tXARDS has to be satisfied.
Rev. 1.21, 2007-03
09152006-J5FK-C565
31
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.3.3
ODT AC Electrical Characteristics
This chapter contains the ODT AC electrical characteristics tables.
TABLE 20
ODT AC Characteristics and Operating Conditions for DDR2-667 & DDR2-800
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter / Condition
Values
Unit
Note
Min.
Max.
ODT turn-on delay
2
2
tCK
—
ODT turn-on
tAC.MIN
tAC.MIN + 2 ns
tAC.MAX + 0.7 ns
2 tCK + tAC.MAX + 1 ns
ns
1)
ns
—
ODT turn-on (Power-Down Modes)
ODT turn-off delay
2.5
2.5
tCK
—
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
2)
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
—
ODT to Power Down Mode Entry Latency
3
—
8
—
tCK
tCK
—
ODT Power Down Exit Latency
—
1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measure from tAOND.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD.
TABLE 21
ODT AC Characteristics and Operating Conditions for DDR2-533/DDR2-400
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter / Condition
Values
Unit
Note
Min.
Max.
ODT turn-on delay
2
2
tCK
—
ODT turn-on
tAC.MIN
tAC.MIN + 2 ns
tAC.MAX + 1 ns
2 tCK + tAC.MAX + 1 ns
ns
1)
ns
—
ODT turn-on (Power-Down Modes)
ODT turn-off delay
2.5
2.5
tCK
—
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
2)
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
—
ODT to Power Down Mode Entry Latency
3
—
8
—
tCK
tCK
—
ODT Power Down Exit Latency
—
1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when
the ODT resistance is fully on. Both are measure from tAOND.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD.
Rev. 1.21, 2007-03
09152006-J5FK-C565
32
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
3.4
IDD Specifications and Conditions
This chapter describes the IDD Specifications and Conditions.
TABLE 22
IDD Measurement Conditions
Parameter
Symbol
Note1)2)
3)4)5)6)
Operating Current 0
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH
between valid commands. Address and control inputs are SWITCHING, Databus inputs are
SWITCHING.
IDD0
Operating Current 1
IDD1
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN,
tRCD = tRCD.MIN, AL = 0, CL = CL.MIN; CKE is HIGH, CS is HIGH between valid commands. Address and
control inputs are SWITCHING, Databus inputs are SWITCHING.
Precharge Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are
SWITCHING, Data bus inputs are SWITCHING
IDD2N
Precharge Power-Down Current
Other control and address inputs are STABLE, Data bus inputs are FLOATING.
IDD2P
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,
Data bus inputs are FLOATING.
IDD2Q
Active Power-Down Current
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus
inputs are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);
IDD3P(0)
Active Power-Down Current
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus
inputs are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);
IDD3P(1)
Active Standby Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD3N
Operating Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX., tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD4R
Operating Current
IDD4W
Burst Write: All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING;
Burst Refresh Current
IDD5B
tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
Distributed Refresh Current
IDD5D
tCK = tCK.MIN, Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
Rev. 1.21, 2007-03
09152006-J5FK-C565
33
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Parameter
Symbol
Note1)2)
3)4)5)6)
Self-Refresh Current
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING,
Data bus inputs are FLOATING. RESET is LOW. IDD6 current values are guaranteed up to TCASE of
85 °C max.
IDD6
All Bank Interleave Read Current
IDD7
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTS. IOUT = 0 mA.
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) Definitions for IDD see Table 23
3) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P
4) RESET signal is HIGH for all currents, except for IDD6 (Self Refresh)
5) All current measurements includes Register and PLL current consumption
6) For details and notes see the relevant QIMONDA component data sheet
TABLE 23
Definitions for IDD
Parameter
Description
LOW
VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN
STABLE
inputs are stable at a HIGH or LOW level
FLOATING
inputs are VREF = VDDQ /2
SWITCHING
inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ
signals not including mask or strobes.
Rev. 1.21, 2007-03
09152006-J5FK-C565
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 24
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
IDD Specification HYS72T[32000/64001/64020]HR–2.5–A
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–2.5
–2.5
–2.5
Symbol
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P(MRS= 0)
IDD3P(MRS= 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
1110
1780
1200
Unit
Note1)
1150
mA
2)
1960
1240
mA
2)
880
1330
1330
mA
3)
480
520
520
mA
3)
750
1060
1060
mA
3)
880
1330
1330
mA
3)
630
830
830
mA
3)
480
520
520
mA
3)
1560
2680
1600
mA
2)
1650
2860
1690
mA
2)
1290
2140
1330
mA
2)
480
540
540
mA
3)4)
35
70
70
mA
3)4)
2)
3220
1870
mA
1) Module IDD is calculated on the basis of component IDD and currents includes Registers and PLL. ODT disabled. IDD1, IDD4R and IDD7 are
1830
defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Standby Current mode
3) Both ranks are in the same IDD mode
4) Values for 0 °C < TCASE ≤ 85 °C
Rev. 1.21, 2007-03
09152006-J5FK-C565
35
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 25
IDD Specification HYS72T[32000/64001/64020]HR–3–A
Unit
Note1)
1010
mA
2)
1950
1100
mA
2)
790
1410
1200
mA
3)
430
680
470
mA
3)
660
1140
930
mA
3)
790
1410
1200
mA
3)
560
940
730
mA
3)
430
690
480
mA
3)
1380
2580
1420
mA
2)
1420
2670
1460
mA
2)
1240
2310
1280
mA
2)
440
700
490
mA
3)4)
35
70
70
mA
3)4)
Product Type
HYS72T32000HR–3–A
HYS72T64001HR–3–A
HYS72T64020HR–3–A
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–3
–3
–3
Symbol
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P(MRS= 0)
IDD3P(MRS= 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
970
1770
1060
2)
3210
1730
mA
1) Module IDD is calculated on the basis of component IDD and currents includes Registers and PLL. ODT disabled. IDD1, IDD4R and IDD7 are
1690
defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Standby Current mode
3) Both ranks are in the same IDD mode
4) Values for 0 °C ≤ TCASE ≤ 85 °C
Rev. 1.21, 2007-03
09152006-J5FK-C565
36
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 26
IDD Specification HYS72T[32000/64001/64020]HR–3S–A
Unit
Note1)
980
mA
2)
1870
1060
mA
2)
790
1410
1200
mA
3)
430
680
470
mA
3)
660
1140
930
mA
3)
790
1410
1200
mA
3)
560
940
730
mA
3)
430
690
480
mA
3)
1380
2580
1420
mA
2)
1420
2670
1460
mA
2)
1240
2310
1280
mA
2)
440
700
490
mA
3)4)
35
70
70
mA
3)4)
Product Type
HYS72T32000HR–3S–A
HYS72T64001HR–3S–A
HYS72T64020HR–3S–A
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–3S
–3S
–3S
Symbol
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P(MRS= 0)
IDD3P(MRS= 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
940
1710
1020
2)
3080
1670
mA
1) Module IDD is calculated on the basis of component IDD and currents includes Registers and PLL. ODT disabled. IDD1, IDD4R and IDD7 are
1630
defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Standby Current mode
3) Both ranks are in the same IDD mode
4) Values for 0 °C ≤ TCASE ≤ 85 °C
Rev. 1.21, 2007-03
09152006-J5FK-C565
37
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 27
IDD Specification for HYS72T[32000/64001/64020]HR–3.7–A
Unit
Note1)
860
mA
2)
1580
910
mA
2)
650
1130
960
mA
3)
370
570
400
mA
3)
560
950
780
mA
3)
650
1130
960
mA
3)
470
790
620
mA
3)
370
570
400
mA
3)
1140
2120
1180
mA
2)
1190
2210
1220
mA
2)
1140
2120
1180
mA
2)
380
610
440
mA
3)4)
35
70
70
mA
3)4)
Product Type
HYS72T32000HR–3.7–A
HYS72T64001HR–3.7–A
HYS72T64020HR–3.7–A
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–3.7
–3.7
–3.7
Symbol
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P(MRS= 0)
IDD3P(MRS= 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
830
1490
870
2)
2930
1580
mA
1) Module IDD is calculated on the basis of component IDD and currents includes Registers and PLL. ODT disabled. IDD1, IDD4R and IDD7 are
1550
defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Standby Current mode
3) Both ranks are in the same IDD mode
4) Values for 0 °C ≤ TCASE ≤ 85 °C
Rev. 1.21, 2007-03
09152006-J5FK-C565
38
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 28
IDD Specification for HYS72T[32000/64001/64020]HR-5-A
Unit
Note1)
760
mA
2)
1400
810
mA
2)
530
910
780
mA
3)
310
480
350
mA
3)
460
770
640
mA
3)
550
950
820
mA
3)
390
640
510
mA
3)
310
480
350
mA
3)
910
1670
940
mA
2)
950
1760
990
mA
2)
1040
1940
1080
mA
2)
330
510
380
mA
3)4)
35
70
70
mA
3)4)
Product Type
HYS72T32000HR–5–A
HYS72T64001HR–5–A
HYS72T64020HR–5–A
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank
1 Rank
2 Ranks
–5
–5
–5
Symbol
Max.
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P(MRS= 0)
IDD3P(MRS= 1)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
730
1310
770
2)
2660
1440
mA
1) Module IDD is calculated on the basis of component IDD and currents includes Registers and PLL. ODT disabled. IDD1, IDD4R and IDD7 are
1400
defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Standby Current mode
3) Both ranks are in the same IDD mode
4) Values for 0 °C ≤ TCASE ≤ 85 °C
Rev. 1.21, 2007-03
09152006-J5FK-C565
39
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.
List of SPD Code Tables
•
•
•
•
•
Table 29 “SPD Codes for PC2–6400R–666” on Page 40
Table 30 “SPD Codes for PC2–5300R–444” on Page 45
Table 31 “SPD Codes for PC2–5300R–555” on Page 49
Table 32 “SPD Codes for PC2–4200R–444” on Page 53
Table 33 “SPD Codes for PC2–3200R–333” on Page 57
TABLE 29
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
SPD Codes for PC2–6400R–666
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–6400R–666
PC2–6400R–666
PC2–6400R–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
0A
0B
0A
5
DIMM Rank and Stacking Information
60
60
61
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
25
25
25
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
40
40
40
11
Error Correction Support (non-ECC, ECC)
02
02
02
Rev. 1.21, 2007-03
09152006-J5FK-C565
40
Internet Data Sheet
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–6400R–666
PC2–6400R–666
PC2–6400R–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
08
04
08
14
Error Checking SDRAM Width
08
04
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
20
DIMM Type Information
01
01
01
21
DIMM Attributes
04
05
05
22
Component Attributes
03
03
03
23
30
30
30
45
45
45
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
31
Module Density per Rank
40
80
40
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
17
17
17
24
25
26
27
28
29
33
34
35
36
37
38
Rev. 1.21, 2007-03
09152006-J5FK-C565
41
3D
3D
3D
50
50
50
3C
3C
3C
1E
1E
1E
3C
3C
3C
25
25
25
05
05
05
12
12
12
3C
3C
3C
1E
1E
1E
1E
1E
1E
Internet Data Sheet
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–6400R–666
PC2–6400R–666
PC2–6400R–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
39
Analysis Characteristics
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
41
42
43
44
45
3C
3C
3C
4B
4B
4B
80
80
80
14
14
14
1E
1E
1E
46
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
53
53
53
48
Psi(T-A) DRAM
82
82
82
49
∆T0 (DT0)
5B
5B
5B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
2B
2B
2B
51
∆T2P (DT2P)
29
29
29
52
∆T3N (DT3N)
29
29
29
53
∆T3P.fast (DT3P fast)
36
36
36
54
∆T3P.slow (DT3P slow)
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4E
4E
4E
56
∆T5B (DT5B)
17
17
17
57
∆T7 (DT7)
26
26
26
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
70
70
70
61
∆TREG (DTREG) / Toggle Rate
B0
B0
B0
62
SPD Revision
12
12
12
63
Checksum of Bytes 0-62
F7
31
F9
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
Rev. 1.21, 2007-03
09152006-J5FK-C565
42
Internet Data Sheet
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–6400R–666
PC2–6400R–666
PC2–6400R–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
33
36
36
77
Product Type, Char 5
32
34
34
78
Product Type, Char 6
30
30
30
79
Product Type, Char 7
30
30
32
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
52
52
52
83
Product Type, Char 11
32
32
32
84
Product Type, Char 12
2E
2E
2E
85
Product Type, Char 13
35
35
35
86
Product Type, Char 14
41
41
41
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
3x
3x
3x
92
Test Program Revision Code
xx
xx
xx
Rev. 1.21, 2007-03
09152006-J5FK-C565
43
Internet Data Sheet
Product Type
HYS72T32000HR–2.5–A
HYS72T64001HR–2.5–A
HYS72T64020HR–2.5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–6400R–666
PC2–6400R–666
PC2–6400R–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
99 - 127 Not used
128 255
Blank for customer use
Rev. 1.21, 2007-03
09152006-J5FK-C565
44
xx
xx
xx
00
00
00
FF
FF
FF
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 30
Product Type
HYS72T32000HR–3–A
HYS72T64001HR–3–A
HYS72T64020HR–3–A
SPD Codes for PC2–5300R–444
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–444
PC2–5300R–444
PC2–5300R–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
0A
0B
0A
5
DIMM Rank and Stacking Information
60
60
61
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
30
30
30
10
45
45
45
11
Error Correction Support (non-ECC, ECC)
02
02
02
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
08
04
08
14
Error Checking SDRAM Width
08
04
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
20
DIMM Type Information
01
01
01
21
DIMM Attributes
04
05
05
22
Component Attributes
03
03
03
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
30
30
30
45
45
45
24
Rev. 1.21, 2007-03
09152006-J5FK-C565
45
Internet Data Sheet
Product Type
HYS72T32000HR–3–A
HYS72T64001HR–3–A
HYS72T64020HR–3–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–444
PC2–5300R–444
PC2–5300R–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
25
30
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
31
Module Density per Rank
40
80
40
32
20
20
20
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
39
Analysis Characteristics
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
26
27
28
29
33
34
35
36
37
41
42
43
44
45
50
50
50
60
60
60
30
30
30
1E
1E
1E
30
30
30
27
27
27
10
10
10
17
17
17
3C
3C
3C
1E
1E
1E
39
39
39
4B
4B
4B
80
80
80
18
18
18
22
22
22
46
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
52
52
52
48
Psi(T-A) DRAM
82
82
82
49
∆T0 (DT0)
47
47
47
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
25
25
25
51
∆T2P (DT2P)
29
29
29
Rev. 1.21, 2007-03
09152006-J5FK-C565
46
Internet Data Sheet
Product Type
HYS72T32000HR–3–A
HYS72T64001HR–3–A
HYS72T64020HR–3–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–444
PC2–5300R–444
PC2–5300R–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
52
∆T3N (DT3N)
25
25
25
53
∆T3P.fast (DT3P fast)
2F
2F
2F
54
∆T3P.slow (DT3P slow)
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
44
44
44
56
∆T5B (DT5B)
17
17
17
57
∆T7 (DT7)
24
24
24
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
68
68
68
61
∆TREG (DTREG) / Toggle Rate
94
94
94
62
SPD Revision
12
12
12
63
Checksum of Bytes 0-62
A4
DE
A6
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
33
36
36
77
Product Type, Char 5
32
34
34
78
Product Type, Char 6
30
30
30
Rev. 1.21, 2007-03
09152006-J5FK-C565
47
Internet Data Sheet
Product Type
HYS72T32000HR–3–A
HYS72T64001HR–3–A
HYS72T64020HR–3–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–444
PC2–5300R–444
PC2–5300R–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
79
Product Type, Char 7
30
30
32
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
52
52
52
83
Product Type, Char 11
33
33
33
84
Product Type, Char 12
41
41
41
85
Product Type, Char 13
20
20
20
86
Product Type, Char 14
20
20
20
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
6x
6x
6x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
Rev. 1.21, 2007-03
09152006-J5FK-C565
48
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 31
Product Type
HYS72T32000HR–3S–A
HYS72T64001HR–3S–A
HYS72T64020HR–3S–A
SPD Codes for PC2–5300R–555
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–555
PC2–5300R–555
PC2–5300R–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
0A
0B
0A
5
DIMM Rank and Stacking Information
60
60
61
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
30
30
30
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
45
45
45
11
Error Correction Support (non-ECC, ECC)
02
02
02
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
08
04
08
14
Error Checking SDRAM Width
08
04
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
20
DIMM Type Information
01
01
01
21
DIMM Attributes
04
05
05
22
Component Attributes
03
03
03
23
tCK @ CLMAX -1 (Byte 18) [ns]
3D
3D
3D
Rev. 1.21, 2007-03
09152006-J5FK-C565
49
Internet Data Sheet
Product Type
HYS72T32000HR–3S–A
HYS72T64001HR–3S–A
HYS72T64020HR–3S–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–555
PC2–5300R–555
PC2–5300R–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
24
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
50
50
50
50
50
50
60
60
60
3C
3C
3C
1E
1E
1E
3C
3C
3C
2D
2D
2D
31
Module Density per Rank
40
80
40
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
20
20
20
25
26
27
28
29
30
33
34
35
36
37
38
27
27
27
10
10
10
17
17
17
3C
3C
3C
1E
1E
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
40
00
00
00
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
41
3C
3C
3C
4B
4B
4B
80
80
80
18
18
18
22
22
22
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
52
52
52
48
Psi(T-A) DRAM
82
82
82
42
43
44
49
∆T0 (DT0)
43
43
43
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
25
25
25
Rev. 1.21, 2007-03
09152006-J5FK-C565
50
Internet Data Sheet
Product Type
HYS72T32000HR–3S–A
HYS72T64001HR–3S–A
HYS72T64020HR–3S–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–555
PC2–5300R–555
PC2–5300R–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
51
∆T2P (DT2P)
29
29
29
52
∆T3N (DT3N)
25
25
25
53
∆T3P.fast (DT3P fast)
2F
2F
2F
54
∆T3P.slow (DT3P slow)
19
19
19
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
44
44
44
56
∆T5B (DT5B)
17
17
17
57
∆T7 (DT7)
22
22
22
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
68
68
68
61
∆TREG (DTREG) / Toggle Rate
94
94
94
62
SPD Revision
12
12
12
63
Checksum of Bytes 0-62
D1
0B
D3
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
33
36
36
77
Product Type, Char 5
32
34
34
Rev. 1.21, 2007-03
09152006-J5FK-C565
51
Internet Data Sheet
Product Type
HYS72T32000HR–3S–A
HYS72T64001HR–3S–A
HYS72T64020HR–3S–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–5300R–555
PC2–5300R–555
PC2–5300R–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
78
Product Type, Char 6
30
30
30
79
Product Type, Char 7
30
30
32
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
52
52
52
83
Product Type, Char 11
33
33
33
84
Product Type, Char 12
53
53
53
85
Product Type, Char 13
41
41
41
86
Product Type, Char 14
20
20
20
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
3x
3x
3x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
Rev. 1.21, 2007-03
09152006-J5FK-C565
52
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 32
Product Type
HYS72T32000HR–3.7–A
HYS72T64001HR–3.7–A
HYS72T64020HR–3.7–A
SPD Codes for PC2–4200R–444
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–4200R–444
PC2–4200R–444
PC2–4200R–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
0A
0B
0A
5
DIMM Rank and Stacking Information
60
60
61
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
3D
3D
3D
50
50
50
11
Error Correction Support (non-ECC, ECC)
02
02
02
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
08
04
08
10
14
Error Checking SDRAM Width
08
04
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
00
00
00
20
DIMM Type Information
01
01
01
21
DIMM Attributes
04
05
05
22
Component Attributes
01
01
01
23
tCK @ CLMAX -1 (Byte 18) [ns]
3D
3D
3D
Rev. 1.21, 2007-03
09152006-J5FK-C565
53
Internet Data Sheet
Product Type
HYS72T32000HR–3.7–A
HYS72T64001HR–3.7–A
HYS72T64020HR–3.7–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–4200R–444
PC2–4200R–444
PC2–4200R–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
24
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
50
50
50
50
50
50
60
60
60
3C
3C
3C
1E
1E
1E
3C
3C
3C
2D
2D
2D
31
Module Density per Rank
40
80
40
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
25
25
25
37
37
37
10
10
10
22
22
22
3C
3C
3C
1E
1E
1E
1E
1E
1E
25
26
27
28
29
30
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
40
00
00
00
3C
3C
3C
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
28
28
28
46
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
55
55
55
48
Psi(T-A) DRAM
82
82
82
49
∆T0 (DT0)
37
37
37
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
1F
1F
1F
41
42
43
44
Rev. 1.21, 2007-03
09152006-J5FK-C565
54
4B
4B
4B
80
80
80
1E
1E
1E
Internet Data Sheet
Product Type
HYS72T32000HR–3.7–A
HYS72T64001HR–3.7–A
HYS72T64020HR–3.7–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–4200R–444
PC2–4200R–444
PC2–4200R–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
51
∆T2P (DT2P)
21
21
21
52
∆T3N (DT3N)
1D
1D
1D
53
∆T3P.fast (DT3P fast)
28
28
28
54
∆T3P.slow (DT3P slow)
14
14
14
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
2C
2C
2C
56
∆T5B (DT5B)
15
15
15
57
∆T7 (DT7)
21
21
21
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
61
61
61
61
∆TREG (DTREG) / Toggle Rate
78
78
78
62
SPD Revision
11
11
11
63
Checksum of Bytes 0-62
A8
E2
AA
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
33
36
36
77
Product Type, Char 5
32
34
34
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55
Internet Data Sheet
Product Type
HYS72T32000HR–3.7–A
HYS72T64001HR–3.7–A
HYS72T64020HR–3.7–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–4200R–444
PC2–4200R–444
PC2–4200R–444
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
78
Product Type, Char 6
30
30
30
79
Product Type, Char 7
30
30
32
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
52
52
52
83
Product Type, Char 11
33
33
33
84
Product Type, Char 12
2E
2E
2E
85
Product Type, Char 13
37
37
37
86
Product Type, Char 14
41
41
41
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
4x
4x
4x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
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56
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
TABLE 33
Product Type
HYS72T32000HR–5–A
HYS72T64001HR–5–A
HYS72T64020HR–5–A
SPD Codes for PC2–3200R–333
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–3200R–333
PC2–3200R–333
PC2–3200R–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
2
Memory Type (DDR2)
08
08
08
3
Number of Row Addresses
0D
0D
0D
4
Number of Column Addresses
0A
0B
0A
5
DIMM Rank and Stacking Information
60
60
61
6
Data Width
48
48
48
7
Not used
00
00
00
8
Interface Voltage Level
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
50
50
50
10
60
60
60
11
Error Correction Support (non-ECC, ECC)
02
02
02
12
Refresh Rate and Type
82
82
82
13
Primary SDRAM Width
08
04
08
14
Error Checking SDRAM Width
08
04
08
15
Not used
00
00
00
16
Burst Length Supported
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
18
Supported CAS Latencies
38
38
38
19
DIMM Mechanical Characteristics
00
00
00
20
DIMM Type Information
01
01
01
21
DIMM Attributes
04
05
05
22
Component Attributes
01
01
01
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
50
50
50
60
60
60
24
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57
Internet Data Sheet
Product Type
HYS72T32000HR–5–A
HYS72T64001HR–5–A
HYS72T64020HR–5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–3200R–333
PC2–3200R–333
PC2–3200R–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
25
30
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
28
28
28
31
Module Density per Rank
40
80
40
32
35
35
35
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
39
Analysis Characteristics
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
26
27
28
29
33
34
35
36
37
41
42
43
44
45
50
50
50
60
60
60
3C
3C
3C
1E
1E
1E
3C
3C
3C
47
47
47
15
15
15
27
27
27
3C
3C
3C
28
28
28
37
37
37
4B
4B
4B
80
80
80
23
23
23
2D
2D
2D
46
PLL Relock Time
0F
0F
0F
47
TCASE.MAX Delta / ∆T4R4W Delta
53
53
53
48
Psi(T-A) DRAM
82
82
82
49
∆T0 (DT0)
2F
2F
2F
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
19
19
19
51
∆T2P (DT2P)
21
21
21
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58
Internet Data Sheet
Product Type
HYS72T32000HR–5–A
HYS72T64001HR–5–A
HYS72T64020HR–5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–3200R–333
PC2–3200R–333
PC2–3200R–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
52
∆T3N (DT3N)
19
19
19
53
∆T3P.fast (DT3P fast)
20
20
20
54
∆T3P.slow (DT3P slow)
14
14
14
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
26
26
26
56
∆T5B (DT5B)
14
14
14
57
∆T7 (DT7)
1F
1F
1F
58
Psi(ca) PLL
C4
C4
C4
59
Psi(ca) REG
8C
8C
8C
60
∆TPLL (DTPLL)
59
59
59
61
∆TREG (DTREG) / Toggle Rate
5C
5C
5C
62
SPD Revision
11
11
11
63
Checksum of Bytes 0-62
D9
13
DB
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
72
Module Manufacturer Location
xx
xx
xx
73
Product Type, Char 1
37
37
37
74
Product Type, Char 2
32
32
32
75
Product Type, Char 3
54
54
54
76
Product Type, Char 4
33
36
36
77
Product Type, Char 5
32
34
34
78
Product Type, Char 6
30
30
30
Rev. 1.21, 2007-03
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59
Internet Data Sheet
Product Type
HYS72T32000HR–5–A
HYS72T64001HR–5–A
HYS72T64020HR–5–A
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Organization
256MB
512MB
512MB
×72
×72
×72
1 Rank (×8)
1 Rank (×4)
2 Ranks (×8)
Label Code
PC2–3200R–333
PC2–3200R–333
PC2–3200R–333
JEDEC SPD Revision
Rev. 1.1
Rev. 1.1
Rev. 1.1
Byte#
Description
HEX
HEX
HEX
79
Product Type, Char 7
30
30
32
80
Product Type, Char 8
30
31
30
81
Product Type, Char 9
48
48
48
82
Product Type, Char 10
52
52
52
83
Product Type, Char 11
35
35
35
84
Product Type, Char 12
41
41
41
85
Product Type, Char 13
20
20
20
86
Product Type, Char 14
20
20
20
87
Product Type, Char 15
20
20
20
88
Product Type, Char 16
20
20
20
89
Product Type, Char 17
20
20
20
90
Product Type, Char 18
20
20
20
91
Module Revision Code
4x
4x
4x
92
Test Program Revision Code
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
99 - 127 Not used
00
00
00
128 255
FF
FF
FF
Blank for customer use
Rev. 1.21, 2007-03
09152006-J5FK-C565
60
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
5
Package Outlines
This chapter contains the package outlines of the products.
FIGURE 5
Package Outline Raw Card A L-DIM-240-11
$ % &
0$
;
[
&
“
$
“ “
%
“
'HWD LOR IF RQWD FWV “ $ % &
%XUUPD [ DOORZ
H G
Rev. 1.21, 2007-03
09152006-J5FK-C565
*/' 61
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
FIGURE 6
Package Outline Raw Card B-G L-DIM-240-12
$ % &
0$
;
[
&
“
$
“ “ %
“
'HWD LORIFR QWD FWV “ $ % &
%XUUPD [ DOORZ
H G
Rev. 1.21, 2007-03
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*/' 62
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
FIGURE 7
Package Outline Raw Card C L-DIM-240-13
$ % &
0
$;
[
&
“ $
“
“
%
“ 'HWDLOR IF RQWD FWV
“ $ % &
%XUUP
D[ D OORZH G Rev. 1.21, 2007-03
09152006-J5FK-C565
*/' 63
Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
6
Product Type Nomenclature
field number. The detailed field description together with
possible values and coding explanation is listed for modules
in Table 35 and for components in Table 36.
Qimonda’s nomenclature uses simple coding combined with
some propriatory coding. Table 34 provides examples for
module and component product type number as well as the
TABLE 34
Nomenclature Fields and Examples
Example for
Field Number
1
2
3
4
5
6
7
8
9
10
11
Micro-DIMM
HYS
64
T
64
0
2
0
K
M
–5
–A
DDR2 DRAM
HYB
18
T
512
16
0
A
C
–5
—
TABLE 35
DDR2 DIMM Nomenclature
Field
Description
Values
Coding
1
QIMONDA
Modul Prefix
HYS
Constant
2
Module Data Width [bit]
64
Non-ECC
72
ECC
3
DRAM Technology
T
DDR2
4
Memory Density per I/O [Mbit];
Module Density1)
32
256 MByte
64
512 MByte
128
1 GByte
256
2 GByte
512
4 GByte
5
Raw Card Generation
0 .. 9
Look up table
6
Number of Module Ranks
0, 2, 4
1, 2, 4
7
Product Variations
0 .. 9
Look up table
8
Package,
Lead-Free Status
A .. Z
Look up table
9
Module Type
D
SO-DIMM
M
Micro-DIMM
R
Registered
U
Unbuffered
F
Fully Buffered
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Field
Description
Values
Coding
10
Speed Grade
–2.5
PC2–6400 6–6–6
–3
PC2–5300 4–4–4
–3S
PC2–5300 5–5–5
–3.7
PC2–4200 4–4–4
11
Die Revision
–5
PC2–3200 3–3–3
–A
First
–B
Second
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall
module memory density in MBytes as listed in column “Coding”.
TABLE 36
DDR2 DRAM Nomenclature
Field
Description
Values
Coding
1
QIMONDA
Component Prefix
HYB
Constant
2
Interface Voltage [V]
18
SSTL_18
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
256
256 Mbit
512
512 Mbit
1G
1 Gbit
5+6
Number of I/Os
2G
2 Gbit
40
×4
80
×8
16
×16
7
Product Variations
0 .. 9
Look up table
8
Die Revision
A
First
B
Second
C
FBGA,
lead-containing
F
FBGA, lead-free
–2.5
DDR2-800 6-6-6
–3
DDR2-667 4-4-4
–3S
DDR2-667 5-5-5
–3.7
DDR2-533 4-4-4
–5
DDR2-400 3-3-3
9
10
Package,
Lead-Free Status
Speed Grade
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Internet Data Sheet
HYS72T[32/64]0xxHR–[2.5/3/3S/3.7/5]–A
Registered DDR2 SDRAM Modules
Table of Contents
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.2
3.3
3.3.1
3.3.2
3.3.3
3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Speed Grades Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
16
17
17
19
32
33
4
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
6
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Rev. 1.21, 2007-03
09152006-J5FK-C565
66
Internet Data Sheet
Edition 2007-03
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2007.
All Rights Reserved.
Legal Disclaimer
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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