Qimonda HYS72T64900EU-3.7-B2 240-pin unbuffered ddr2 sdram module Datasheet

October 2006
HYS64T32[0/9]00EU-[25F/2.5/3/3S/3.7]-B2
HYS[64/72]T64[0/9]00EU-[25F/2.5/3/3S/3.7]-B2
HYS[64/72]T128[0/9]20EU-[25F/2.5/3/3S/3.7]-B2
2 4 0 - P i n u n b u f f e r e d D D R 2 S D R A M Mo d u l e s
DDR2 SDRAM
UDIMM SDRAM
RoHs Compliant
Internet Data Sheet
Rev. 1.0
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
HYS64T32[0/9]00EU-[25F/2.5/3/3S/3.7]-B2, HYS[64/72]T64[0/9]00EU-[25F/2.5/3/3S/3.7]-B2, HYS[64/72]T128[0/9]20EU[25F/2.5/3/3S/3.7]-B2
Revision History: 2006-10, Rev. 1.0
Page
Subjects (major changes since last revision)
All
Qimonda update
All
Adapted internet edition
4,5
Ordering information table. Added 6LayerWhiteBox Products
16 – 20
Block Diagrams: Clock Signal Load Tables and Notes updated
34, 35
ODT table update
38 – 42
Added IDD values
45 – 92
SPD codes updated
Previous Revision: 2006-07, Rev. 0.5
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10202006-L0SM-FEYT
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
1
Overview
This chapter gives an overview of the 240-Pin unbuffered DDR2 SDRAM Modules product family and describes its main
characteristics.
1.1
Features
Feature list and performance tables
• 240-Pin PC2–6400, PC2–5300 and PC2–4200 DDR2
SDRAM memory modules.
• Module organization 32M × 64, 64M × 64, 64M × 72,
128M × 64 and 128M × 72.
Chip organization 32M × 16 and 64M × 8.
• Standard Double-Data-Rate-Two Synchronous DRAMs
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power
supply
• 256MB, 512MB and 1GB modules built with 512-Mbit
DDR2 SDRAMs in P-TFBGA-60 and PG-TFBGA-84
chipsize packages
• All speed grades faster than DDR2–400 comply with
DDR400 timing specifications.
• Programmable CAS Latencies (3, 4, 5 and 6), Burst
Length (8 & 4) and Burst Type
•
•
•
•
•
•
•
•
•
•
Auto Refresh (CBR) and Self Refresh
Programmable self refresh rate via EMRS2 setting
Programmable partial array refresh via EMRS2 settings
DCC enabling via EMRS2 setting
All inputs and outputs SSTL_1.8 compatible
Off-Chip Driver Impedance Adjustment (OCD) and On-Die
Termination (ODT)
Serial Presence Detect with E2PROM
UDIMM Dimensions (nominal): 30 mm high and
133.35 mm wide
Based on standard reference layouts Raw Card “C” “D”,
“E”, “F” and “G”
RoHS compliant products1)
TABLE 1
Performance Table
Product Type Speed Code
–25F
–2.5
–3
–3S
–3.7
Unit
Speed Grade
PC2–6400
5–5–5
PC2–6400
6–6–6
PC2–5300
4–4–4
PC2–5300
5–5–5
PC2–4200
4–4–4
—
400
400
–
–
–
MHz
400
333
333
333
266
MHz
266
266
333
266
266
MHz
Max. Clock Frequency
@CL6
@CL5
@CL4
@CL3
Min. RAS-CAS-Delay
Min. Row Precharge Time
Min. Row Active Time
Min. Row Cycle Time
fCK6
fCK5
fCK4
fCK3
tRCD
tRP
tRAS
tRC
200
200
200
200
200
MHz
12.5
15
12
15
15
ns
12.5
15
12
15
15
ns
45
45
45
45
45
ns
57.5
60
57
60
60
ns
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.
Rev. 1.0, 2006-10
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
1.2
Description
The
Qimonda
HYS[64/72]T[32/64/128][0/9]xxEU[25F/2.5/3/3S/3.7]-B2 module family are unbuffered DIMM
modules “UDIMMs” with 30,0 mm height based on DDR2
technology. DIMMs are available as non-ECC modules in
32M × 64 (256 MB),
64M × 64 (512 MB)
and
128M × 64 (1 GB) and ECC modules in 64M × 72 (512 MB),
128M × 72 (1 GB) organization and density, intended for
mounting into 240-pin connector sockets.
The memory array is designed with 512-Mbit Double-DataRate-Two (DDR2) Synchronous DRAMs. Decoupling
capacitors are mounted on the PCB board. The DIMMs
feature serial presence detect based on a serial E2PROM
device using the 2-pin I2C protocol. The first 128 bytes are
programmed with configuration data and are write protected;
the second 128 bytes are available to the customer.
TABLE 2
Ordering Information for RoHS Compliant Products
Product Type1)
Compliance Code2)
Description
SDRAM
Technology
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
256MB 1R×16 PC2–6400U–555–12–C1
1 Rank, Non-ECC
512 Mbit (×16)
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
512 MB 1R×8 PC2–6400U–555–12–D0
1 Rank, Non-ECC
512 Mbit (×8)
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
512MB 1R×8 PC2–6400E–555–12–F0
1 Rank, ECC
512 Mbit (×8)
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
1GB 2R×8 PC2–6400U–555–12–E0
2 Ranks, Non-ECC
512 Mbit (×8)
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
1GB 2R×8 PC2–6400E–555–12–G0
2 Ranks, ECC
512 Mbit (×8)
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
256MB 1R×16 PC2–6400U–666–12–C1
1 Rank, Non-ECC
512 Mbit (×16)
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
512 MB 1R×8 PC2–6400U–666–12–D0
1 Rank, Non-ECC
512 Mbit (×8)
HYS72T64000EU-2.5–B2
HYS72T64900EU-2.5–B2
512MB 1R×8 PC2–6400E–666–12–F0
1 Rank, ECC
512 Mbit (×8)
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
1GB 2R×8 PC2–6400U–666–12–E0
2 Ranks, Non-ECC
512 Mbit (×8)
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
1GB 2R×8 PC2–6400E–666–12–G0
2 Ranks, ECC
512 Mbit (×8)
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
256MB 1R×16 PC2-5300U–444–12–C1
1 Rank, Non-ECC
512 Mbit (×16)
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
512MB 1R×8 PC2–5300U–444–12–D0
1 Rank, Non-ECC
512 Mbit (×8)
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
512MB 1R×8 PC2–5300E–444–12–F0
1 Rank, ECC
512 Mbit (×8)
PC2–6400
PC2–6400
PC2–5300
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Product Type1)
Compliance Code2)
Description
SDRAM
Technology
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
1GB 2R×8 PC2–5300U–444–12–E0
2 Ranks, Non-ECC
512 Mbit (×8)
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
1GB 2R× 8 PC2-5300E–444–12–G0
2 Ranks, ECC
512 Mbit (×8)
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
256MB 1R×16 PC2–5300U–555–12–C1
1 Rank, Non-ECC
512 Mbit (×16)
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
512MB 1R×8 PC2–5300U–555–12–D0
1 Rank, Non-ECC
512 Mbit (×8)
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
512MB 1R×8 PC2–5300E–555–12–F0
1 Rank, ECC
512 Mbit (×8)
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
1GB 2R×8 PC2–5300U–555–12–E0
2 Ranks, Non-ECC
512 Mbit (×8)
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
1GB 2R×8 PC2–5300E–555–12–G0
2 Ranks, ECC
512 Mbit (×8)
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
256MB 1R×16 PC2–4200U–444–12–C1
1 Rank, Non-ECC
512 Mbit (×16)
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
512MB 1R×8 PC2–4200U–444–12–D0
1 Rank, Non-ECC
512 Mbit (×8)
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
512MB 1R×8 PC2–4200E–444–12–F0
1 Rank, ECC
512 Mbit (×8)
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
1GB 2R×8 PC2–4200U–444–12–E0
2 Ranks, Non-ECC
512 Mbit (×8)
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
1GB 2R×8 PC2–4200E–444–12–G0
2 Ranks, ECC
512 Mbit (×8)
PC2–5300
PC2–4200
1) All Product Type end with a place code, designating the silicon die revision. Example: HYS64T64000EU–3–B2, indicating Rev. “B2” dies
are used for DDR2 SDRAM components. For all Qimonda DDR2 module and component nomenclature see Chapter 6 of this data sheet.
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200U–444–12–D0”, where
4200U means Unbuffered DIMM modules with 4.26 GB/sec. Module Bandwidth and “444-12-D0” means Column Address Strobe (CAS)
latency = 4, Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2 and
produced on the Raw Card “D”.
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 3
Address Format
DIMM
Density
Module
Organization
Memory
Ranks
ECC/
Non-ECC
# of SDRAMs # of row/bank/column
bits
Raw
Card
256 MByte
32M × 64
1
Non-ECC
4
13/2/10
C
512 MByte
64M × 64
1
Non-ECC
8
14/2/10
D
512 MByte
72M × 64
1
ECC
9
14/2/10
F
1 GByte
128M × 64
2
Non-ECC
16
14/2/10
E
1 GByte
128M × 72
2
ECC
18
14/2/10
G
TABLE 4
Components on Modules
Product Type1)2)
DRAM Components1)
DRAM Density
DRAM Organization
HYS64T32[0/9]00EU
HYB18T512160B2F
512 Mbit
32M × 16
HYS64T64[0/9]00EU
HYB18T512800B2F
512 Mbit
64M × 8
HYS72T64[0/9]00EU
HYB18T512800B2F
512 Mbit
64M × 8
HYS64T128[0/9]20EU
HYB18T512800B2F
512 Mbit
64M × 8
HYS72T128[0/9]20EU
HYB18T512800B2F
512 Mbit
64M × 8
1) Green Product
2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
2
Pin Configuration
The pin configuration of the Unbuffered DDR2 SDRAM DIMM is listed by function in Table 5 (240 pins). The abbreviations used
in columns Pin and Buffer Type are explained in Table 6 and Table 7 respectively. The pin numbering is depicted in Figure 1
for non-ECC modules (×64) and Figure 2 for ECC modules (×72).
TABLE 5
Pin Configuration of UDIMM
Ball No.
Name
Pin
Type
Buffer
Type
Function
Clock Signals 2:0, Complement Clock Signals 2:0
Clock Signals
185
CK0
I
SSTL
137
CK1
I
SSTL
220
CK2
I
SSTL
186
CK0
I
SSTL
138
CK1
I
SSTL
221
CK2
I
SSTL
52
CKE0
I
SSTL
171
CKE1
I
SSTL
Clock Enable Rank 1:0
Note: 2 Ranks module
NC
NC
—
Not Connected
Note: 1 Rank module
193
S0#
I
SSTL
76
S1#
I
SSTL
Chip Select Rank 1:0
Note: 2 Ranks module
NC
NC
—
Not Connected
Note: 1 Rank module
Control Signals
192
RAS
I
SSTL
Row Address Strobe
74
CAS
I
SSTL
Column Address Strobe
73
WE
I
SSTL
Write Enable
71
BA0
I
SSTL
Bank Address Bus 1:0
190
BA1
I
SSTL
54
BA2
I
SSTL
Bank Address Bus 2
Greater than 512Mb DDR2 SDRAMS
NC
NC
—
Not Connected
Less than 1Gb DDR2 SDRAMS
Address Signals
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Ball No.
Name
Pin
Type
Buffer
Type
Function
188
A0
I
SSTL
Address Bus 12:0
183
A1
I
SSTL
63
A2
I
SSTL
182
A3
I
SSTL
61
A4
I
SSTL
60
A5
I
SSTL
180
A6
I
SSTL
58
A7
I
SSTL
179
A8
I
SSTL
177
A9
I
SSTL
70
A10
I
SSTL
AP
I
SSTL
57
A11
I
SSTL
176
A12
I
SSTL
196
A13
I
SSTL
Address Signal 13
Note: 1 Gbit based module and 512M ×4/×8
NC
NC
—
Not Connected
Note: Module based on 1 Gbit ×16
Module based on 512 Mbit ×16 or smaller
A14
I
SSTL
Address Signal 14
Note: Modules based on 2 Gbit
NC
NC
—
Not Connected
Note: Modules based on 1 Gbit or smaller
3
DQ0
I/O
SSTL
4
DQ1
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
9
DQ2
I/O
SSTL
10
DQ3
I/O
SSTL
122
DQ4
I/O
SSTL
123
DQ5
I/O
SSTL
128
DQ6
I/O
SSTL
129
DQ7
I/O
SSTL
174
Data Signals
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Ball No.
Name
Pin
Type
Buffer
Type
Function
12
DQ8
I/O
SSTL
13
DQ9
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
21
DQ10
I/O
SSTL
22
DQ11
I/O
SSTL
131
DQ12
I/O
SSTL
132
DQ13
I/O
SSTL
140
DQ14
I/O
SSTL
141
DQ15
I/O
SSTL
24
DQ16
I/O
SSTL
25
DQ17
I/O
SSTL
30
DQ18
I/O
SSTL
31
DQ19
I/O
SSTL
143
DQ20
I/O
SSTL
144
DQ21
I/O
SSTL
149
DQ22
I/O
SSTL
150
DQ23
I/O
SSTL
33
DQ24
I/O
SSTL
34
DQ25
I/O
SSTL
39
DQ26
I/O
SSTL
40
DQ27
I/O
SSTL
152
DQ28
I/O
SSTL
153
DQ29
I/O
SSTL
158
DQ30
I/O
SSTL
159
DQ31
I/O
SSTL
80
DQ32
I/O
SSTL
81
DQ33
I/O
SSTL
86
DQ34
I/O
SSTL
87
DQ35
I/O
SSTL
199
DQ36
I/O
SSTL
200
DQ37
I/O
SSTL
205
DQ38
I/O
SSTL
206
DQ39
I/O
SSTL
89
DQ40
I/O
SSTL
90
DQ41
I/O
SSTL
95
DQ42
I/O
SSTL
96
DQ43
I/O
SSTL
208
DQ44
I/O
SSTL
209
DQ45
I/O
SSTL
214
DQ46
I/O
SSTL
215
DQ47
I/O
SSTL
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Ball No.
Name
Pin
Type
Buffer
Type
Function
98
DQ48
I/O
SSTL
99
DQ49
I/O
SSTL
Data Bus 63:0
Data Input/Output pins
107
DQ50
I/O
SSTL
108
DQ51
I/O
SSTL
217
DQ52
I/O
SSTL
218
DQ53
I/O
SSTL
226
DQ54
I/O
SSTL
227
DQ55
I/O
SSTL
110
DQ56
I/O
SSTL
111
DQ57
I/O
SSTL
116
DQ58
I/O
SSTL
117
DQ59
I/O
SSTL
229
DQ60
I/O
SSTL
230
DQ61
I/O
SSTL
235
DQ62
I/O
SSTL
236
DQ63
I/O
SSTL
CB0
I/O
SSTL
Check Bit 0
NC
NC
—
Not Connected
43
CB1
I/O
SSTL
Check Bit 1
NC
NC
—
Not Connected
48
CB2
I/O
SSTL
Check Bit 2
NC
NC
—
Not Connected
CB3
I/O
SSTL
Check Bit 3
NC
NC
—
Not Connected
CB4
I/O
SSTL
Check Bit 4
NC
NC
—
Not Connected
162
CB5
I/O
SSTL
Check Bit 5
NC
NC
—
Not Connected
167
CB6
I/O
SSTL
Check Bit 6
NC
NC
—
Not Connected
CB7
I/O
SSTL
Check Bit 7
NC
NC
—
Not Connected
Check Bit Signals
42
49
161
168
Rev. 1.0, 2006-10
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Ball No.
Name
Pin
Type
Buffer
Type
Function
Data Strobe Bus 8:0
Data Strobe Bus
7
DQS0
I/O
SSTL
16
DQS1
I/O
SSTL
28
DQS2
I/O
SSTL
37
DQS3
I/O
SSTL
84
DQS4
I/O
SSTL
93
DQS5
I/O
SSTL
105
DQS6
I/O
SSTL
114
DQS7
I/O
SSTL
46
DQS8
I/O
SSTL
6
DQS0
I/O
SSTL
15
DQS1
I/O
SSTL
27
DQS2
I/O
SSTL
36
DQS3
I/O
SSTL
83
DQS4
I/O
SSTL
92
DQS5
I/O
SSTL
104
DQS6
I/O
SSTL
113
DQS7
I/O
SSTL
45
DQS8
I/O
SSTL
Complement Data Strobe Bus 8:0
Data Mask Signals
125
DM0
I
SSTL
134
DM1
I
SSTL
146
DM2
I
SSTL
155
DM3
I
SSTL
202
DM4
I
SSTL
211
DM5
I
SSTL
223
DM6
I
SSTL
232
DM7
I
SSTL
164
DM8
I
SSTL
SCL
I
CMOS
Data Mask Bus 8:0
EEPROM
120
Serial Bus Clock
119
SDA
I/O
OD
Serial Bus Data
239
SA0
I
CMOS
Serial Address Select Bus 2:0
240
SA1
I
CMOS
101
SA2
I
CMOS
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Ball No.
Name
Pin
Type
Buffer
Type
Function
Power Supplies
VREF
AI
VDDSPD PWR
VDDQ
PWR
—
I/O Reference Voltage
—
EEPROM Power Supply
—
I/O Driver Power Supply
53,59,64,67,69,,
172,178,184,187,
189,197
VDD
PWR
—
Power Supply
2,5,8,11,14,17,,
20,23,26,29,32,
35,38,41,44,47,,
50,65,66,79,82,
85,88,91,94,97,,
100,103,106,
109,112,115,118,
121,124,127,,
130,133,136,139,
142,145,148,,
151,154,157,160,
163,166,169,
198,201,204,207,
210,213,216,,
219,222,225,228,
231,234,237
VSS
GND
—
Ground Plane
195
ODT0
I
SSTL
On-Die Termination Control 0
77
ODT1
I
SSTL
On-Die Termination Control 1
Note: 2 Rank modules
NC
NC
—
Not Connected
Note: 1 Rank modules
18,19,55,68,102,1 NC
26,135,147,
156,165,173,203,
212, 224,233
NC
—
Not connected
1
238
51,56,62,72,75,,
78,170,175,181,,
191,194
Other Pins
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
12
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 6
Abbreviations for Pin Type
Abbreviation
Description
I
Standard input-only pin. Digital levels.
O
Output. Digital levels.
I/O
I/O is a bidirectional input/output signal.
AI
Input. Analog levels.
PWR
Power
GND
Ground
NC
Not Connected
TABLE 7
Abbreviations for Buffer Type
Abbreviation
Description
SSTL
Serial Stub Terminated Logic (SSTL_18)
LV-CMOS
Low Voltage CMOS
CMOS
CMOS Levels
OD
Open Drain. The corresponding pin has 2 operational states, active low and tri-state,
and allows multiple devices to share as a wire-OR.
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
13
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 1
Pin Configuration UDIMM ×64 (240 Pin)
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Rev. 1.0, 2006-10
10202006-L0SM-FEYT
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033
7
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 2
Pin Configuration UDIMM ×72 (240 Pin)
95() 3LQ
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Rev. 1.0, 2006-10
10202006-L0SM-FEYT
966
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6$
033
7
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
3
Electrical Characteristics
3.1
Absolute Maximum Ratings
3.1.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.
TABLE 8
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VDDL
VIN, VOUT
TSTG
Parameter
Rating
Unit
Note
Min.
Max.
Voltage on VDD pin relative to VSS
–1.0
+2.3
V
1)
Voltage on VDDQ pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on VDDL pin relative to VSS
–0.5
+2.3
V
1)2)
Voltage on any pin relative to VSS
–0.5
+2.3
V
1)
°C
1)2)
Storage Temperature
–55
+100
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 9
DRAM Component Operating Temperature Range
Symbol
TOPER
Parameter
Rating
Operating Temperature
Min.
Max.
0
95
Unit
Note
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
16
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
3.2
DC Operating Conditions
TABLE 10
Operating Conditions
Parameter
Symbol
Values
Unit
Min.
Max.
0
+65
°C
0
+95
°C
Storage Temperature
TOPR
TCASE
TSTG
– 50
+100
°C
Barometric Pressure (operating & storage)
PBar
+69
+105
kPa
Operating Humidity (relative)
HOPR
10
90
%
Operating temperature (ambient)
DRAM Case Temperature
Note
1)2)3)4)
5)
1)
2)
3)
4)
DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs
When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.
5) Up to 3000 m.
TABLE 11
Supply Voltage Levels and DC Operating Conditions
Parameter
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
Symbol
VDD
VDDQ
VREF
VDDSPD
VIH(DC)
VIL (DC)
IL
Values
Unit
Min.
Typ.
Max.
1.7
1.8
1.9
V
1.7
1.8
1.9
V
1)
0.49 × VDDQ
0.5 × VDDQ
0.51 × VDDQ
V
2)
1.7
—
3.6
V
VREF + 0.125
—
V
– 0.30
—
VDDQ + 0.3
VREF – 0.125
V
In / Output Leakage Current
–5
—
5
µA
1) Under all conditions, VDDQ must be less than or equal to VDD
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ.
3) Input voltage for any connector pin under test of 0 V ≤ VIN ≤ VDDQ + 0.3 V; all other pins at 0 V. Current is per pin
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
Note
17
3)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
3.3
Timing Characteristics
All Speed grades faster than DDR2-DDR400B comply with DDR2-DDR400B timing specifications (tCK = 5ns with tRAS = 40ns).
3.3.1
Speed Grade Definitions
Speed Grade Definition: Table 12 for DDR2–800; Table 13 for DDR2–667 and Table 14 for DDR2–533C
TABLE 12
Speed Grade Definition Speed Bins for DDR2–800
Speed Grade
DDR2–800D
DDR2–800E
QAG Sort Name
–2.5F
–2.5
CAS-RCD-RP latencies
5–5–5
6–6–6
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
@ CL = 6
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3.75
8
3.75
8
ns
1)2)3)4)
2.5
8
3
8
ns
1)2)3)4)
2.5
8
2.5
8
ns
1)2)3)4)
45
70000
45
70000
ns
1)2)3)4)5)
57.5
—
60
—
ns
1)2)3)4)
12.5
—
15
—
ns
1)2)3)4)
12.5
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
18
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 13
Speed Grade Definition Speed Bins for DDR2–667
Speed Grade
DDR2–667C
DDR2–667D
QAG Sort Name
–3
–3S
CAS-RCD-RP latencies
4–4–4
5–5–5
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
5
8
ns
1)2)3)4)
3
8
3.75
8
ns
1)2)3)4)
3
8
3
8
ns
1)2)3)4)
45
70000
45
70000
ns
1)2)3)4)5)
57
—
60
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
12
—
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
19
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 14
Speed Grade Definition Speed Bins for DDR2–533C
Speed Grade
DDR2–533C
QAG Sort Name
–3.7
CAS-RCD-RP latencies
4–4–4
Parameter
Clock Frequency
@ CL = 3
@ CL = 4
@ CL = 5
Row Active Time
Row Cycle Time
RAS-CAS-Delay
Row Precharge Time
Unit
Note
tCK
Symbol
Min.
Max.
—
tCK
tCK
tCK
tRAS
tRC
tRCD
tRP
5
8
ns
1)2)3)4)
3.75
8
ns
1)2)3)4)
3.75
8
ns
1)2)3)4)
45
70000
ns
1)2)3)4)5)
60
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
4) The output timing reference voltage level is VTT.
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI.
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
3.3.2
DRAM Component Timing Parameters
DRAM Component Timing Parameters: Table 15 for DDR2–800; Table 16 for DDR2–667 and Table 17 for DDR2–533C.
TABLE 15
DRAM Component Timing Parameter by Speed Grade - DDR2–800
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
–400
+400
ps
9)
–350
+350
ps
9)
0.48
0.52
tCK.AVG
10)11)
0.48
0.52
tCK.AVG
10)11)
2500
8000
ps
10)11)
50
––
ps
12)13)14)
125
––
ps
13)14)15)
0.6
—
0.35
—
tCK.AVG
tCK.AVG
—
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
tAC.MAX
ps
9)16)
—
200
ps
17)
Min(tCH.ABS,
tCL.ABS)
__
ps
18)
—
300
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL – 1
DQ output access time from CK / CK
DQS output access time from CK / CK
Average clock high pulse width
tAC
tDQSCK
tCH.AVG
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
DQ and DM input pulse width for each input
tDIPW
Data-out high-impedance time from CK / CK
tHZ
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
Average clock low pulse width
DQ hold skew factor
tAC.MIN
2 x tAC.MIN
nCK
21)
DQS latching rising transition to associated clock tDQSS
edges
– 0.25
+ 0.25
tCK.AVG
tDQSH
DQS input low pulse width
tDQSL
DQS falling edge to CK setup time
tDSS
DQS falling edge hold time from CK
tDSH
Write postamble
tWPST
Write preamble
tWPRE
Address and control input setup time
tIS.BASE
Address and control input hold time
tIH.BASE
Read preamble
tRPRE
Read postamble
tRPST
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
0.35
—
0.35
—
0.2
—
0.2
—
0.4
0.6
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
175
—
ps
22)23)
250
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
2
—
nCK
15
—
ns
1)
WR + tnRP
—
nCK
28)29)
7.5
—
ns
1)30)
DQS input high pulse width
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21)
21)
25)27)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Parameter
Symbol
DDR2–800
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
tRTP
tXSNR
tXSRD
tXP
7.5
—
ns
1)
tRFC +10
—
ns
1)
200
—
nCK
2
—
nCK
tXARD
tXARDS
2
—
nCK
8 – AL
—
nCK
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
Mode register set command cycle time
tMRD
tMOD
tOIT
tDELAY
2
—
nCK
0
12
ns
1)
0
12
ns
1)
tIS + tCK .AVG +
tIH
––
ns
Internal Read to Precharge command delay
Exit self-refresh to a non-read command
Exit self-refresh to read command
Exit precharge power-down to any valid
command (other than NOP or Deselect)
Exit power down to read command
Exit active power-down mode to read command
(slow exit, lower power)
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
31)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 4.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 4.
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Unbuffered DDR2 SDRAM Module
16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under
the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 5.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 5.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 3 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
29) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
30) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
31) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
Rev. 1.0, 2006-10
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Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 16
DRAM Component Timing Parameter by Speed Grade - DDR2–667
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
–450
+450
ps
9)
–400
+400
ps
9)
0.48
0.52
tCK.AVG
10)11)
0.48
0.52
tCK.AVG
10)11)
3000
8000
ps
100
––
ps
12)13)14)
175
––
ps
13)14)15)
0.6
—
0.35
—
tCK.AVG
tCK.AVG
—
ps
9)16)
tAC.MIN
2 x tAC.MIN
tAC.MAX
tAC.MAX
tAC.MAX
ps
9)16)
ps
9)16)
—
240
ps
17)
Min(tCH.ABS,
tCL.ABS)
__
ps
18)
—
340
ps
19)
DQ/DQS output hold time from DQS
tQHS
tQH
tHP – tQHS
—
ps
20)
Write command to DQS associated clock edges
WL
RL–1
DQ output access time from CK / CK
DQS output access time from CK / CK
Average clock high pulse width
tAC
tDQSCK
tCH.AVG
tCL.AVG
Average clock period
tCK.AVG
DQ and DM input setup time
tDS.BASE
DQ and DM input hold time
tDH.BASE
Control & address input pulse width for each input tIPW
DQ and DM input pulse width for each input
tDIPW
Data-out high-impedance time from CK / CK
tHZ
DQS/DQS low-impedance time from CK / CK
tLZ.DQS
DQ low impedance time from CK/CK
tLZ.DQ
DQS-DQ skew for DQS & associated DQ signals tDQSQ
CK half pulse width
tHP
Average clock low pulse width
DQ hold skew factor
nCK
DQS latching rising transition to associated clock tDQSS
edges
– 0.25
+ 0.25
tCK.AVG
DQS input high pulse width
tDQSH
tDQSL
DQS falling edge to CK setup time
tDSS
DQS falling edge hold time from CK
tDSH
Write postamble
tWPST
Write preamble
tWPRE
Address and control input setup time
tIS.BASE
Address and control input hold time
tIH.BASE
Read preamble
tRPRE
Read postamble
tRPST
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto-Precharge write recovery + precharge time tDAL
Internal write to read command delay
tWTR
Internal Read to Precharge command delay
tRTP
Exit self-refresh to a non-read command
tXSNR
Exit self-refresh to read command
tXSRD
0.35
—
DQS input low pulse width
0.35
—
0.2
—
0.2
—
0.4
0.6
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21)
0.35
—
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
tCK.AVG
200
—
ps
22)23)
275
—
ps
23)24)
0.9
1.1
25)26)
0.4
0.6
tCK.AVG
tCK.AVG
2
—
nCK
15
—
ns
1)
WR + tnRP
—
nCK
28)29)
7.5
—
ns
1)30)
7.5
—
ns
1)
tRFC +10
—
ns
1)
200
—
nCK
21)
21)
25)27)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Parameter
Symbol
DDR2–667
Unit
Note1)2)3)4)5)6)7)
8)
Min.
Max.
—
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
Exit power down to read command
tXARD
tXARDS
2
—
nCK
7 – AL
—
nCK
CKE minimum pulse width ( high and low pulse
width)
tCKE
3
—
nCK
Mode register set command cycle time
tMRD
tMOD
tOIT
tDELAY
2
—
nCK
0
12
ns
1)
0
12
ns
1)
tIS + tCK .AVG +
tIH
––
ns
Exit active power-down mode to read command
(slow exit, lower power)
MRS command to ODT update delay
OCD drive mode output delay
Minimum time clocks remain ON after CKE
asynchronously drops LOW
nCK
31)
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min).
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN – tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and
tDQSCK.MAX(DERATED) = tDQSCK.MAX – tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).
12) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See
Figure 4.
13) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
14) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal
((L/U/R)DQS / DQS) crossing.
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and
VIH.DC.MIN. See Figure 4.
16) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .
17) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.
Rev. 1.0, 2006-10
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Unbuffered DDR2 SDRAM Module
18) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the
minimum of the actual instantaneous clock low time.
19) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation
of the output drivers.
20) tQH = tHP – tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under
the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
21) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal
crossing. That is, these parameters should be met whether clock jitter is present or not.
22) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied
to the device under test. See Figure 5.
23) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should
be met whether clock jitter is present or not.
24) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied
to the device under test. See Figure 5.
25) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving
(tRPST), or begins driving (tRPRE). Figure 3 shows a method to calculate these points when the device is no longer driving (tRPST), or begins
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the
calculation is consistent.
26) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).
27) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).
28) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
29) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.
30) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.
31) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during
the time period of tIS + 2 x tCK + tIH.
FIGURE 3
Method for calculating transitions and endpoint
VOH - x mV
VTT + 2x mV
VOH - 2x mV
VTT + x mV
tLZ
tHZ
tRPRE begin point
tRPST end point
VOL + 2x mV
VTT - x mV
VOL + x mV
VTT - 2x mV
T1 T2
T1 T2
tHZ,tRPST end point = 2*T1-T2
Rev. 1.0, 2006-10
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tLZ,tRPRE begin point = 2*T1-T2
26
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 4
Differential input waveform timing - tDS and tDS
DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
FIGURE 5
Differential input waveform timing - tlS and tlH
CK
CK
tIS
tIH
tIS
tIH
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 17
DRAM Component Timing Parameter by Speed Grade - DDR2–533
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Min.
Max.
tAC
tCCD
tCH
tCKE
tCL
tDAL
–500
+500
ps
2
—
0.45
0.55
3
—
0.45
0.55
WR + tRP
—
tCK
tCK
tCK
tCK
tCK
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tDELAY
tIS + tCK + tIH
––
ns
9)
DQ and DM input hold time (differential data
strobe)
tDH(base)
225
––
ps
10)
–25
—
ps
11)
tDIPW
tDQSCK
tDQSL,H
tDQSQ
0.35
—
tCK
–450
+450
ps
0.35
—
tCK
—
300
ps
tDQSS
tDS(base)
– 0.25
+ 0.25
tCK
100
—
ps
11)
–25
—
ps
11)
tDSH
0.2
—
tCK
DQS falling edge to CK setup time (write cycle) tDSS
0.2
—
tCK
DQ output access time from CK / CK
CAS A to CAS B command period
CK, CK high-level width
CKE minimum high and low pulse width
CK, CK low-level width
Auto-Precharge write recovery + precharge
time
DQ and DM input hold time (single ended data tDH1(base)
strobe)
DQ and DM input pulse width (each input)
DQS output access time from CK / CK
DQS input low (high) pulse width (write cycle)
DQS-DQ skew (for DQS & associated DQ
signals)
Write command to 1st DQS latching transition
DQ and DM input setup time (differential data
strobe)
DQ and DM input setup time (single ended data tDS1(base)
strobe)
DQS falling edge hold time from CK (write
cycle)
Clock half period
Data-out high-impedance time from CK / CK
Address and control input hold time
Address and control input pulse width
(each input)
Address and control input setup time
DQ low-impedance time from CK / CK
DQS low-impedance from CK / CK
Mode register set command cycle time
OCD drive mode output delay
Data output hold time from DQS
Data hold skew factor
Rev. 1.0, 2006-10
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tHP
tHZ
tIH(base)
tIPW
28
11)
12)
MIN. (tCL, tCH)
tIS(base)
tLZ(DQ)
tLZ(DQS)
tMRD
tOIT
tQH
tQHS
8)18)
—
tAC.MAX
ps
13)
375
—
ps
11)
0.6
—
tCK
250
—
ps
11)
2 × tAC.MIN
ps
14)
tAC.MIN
tAC.MAX
tAC.MAX
ps
14)
2
—
tCK
0
12
ns
tHP –tQHS
—
—
400
ps
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Parameter
Symbol
DDR2–533
Unit
Note1)2)3)4)5)
6)7)
Average periodic refresh Interval
tREFI
Min.
Max.
—
7.8
µs
14)15)
—
3.9
µs
16)18)
17)
Auto-Refresh to Active/Auto-Refresh
command period
tRFC
105
—
ns
Precharge-All (4 banks) command period
tRP
tRP
tRPRE
tRPST
tRRD
tRP + 1tCK
—
ns
15 + 1tCK
—
ns
0.9
1.1
14)
0.40
0.60
tCK
tCK
Precharge-All (8 banks) command period
Read preamble
Read postamble
Active bank A to Active bank B command
period
7.5
—
ns
10
—
ns
16)20)
tRTP
tWPRE
tWPST
tWR
7.5
—
ns
0.25 x tCK
—
0.40
0.60
tCK
tCK
15
—
ns
Write recovery time for write with AutoPrecharge
WR
tWR/tCK
Internal Write to Read command delay
tWTR
tXARD
7.5
Exit active power-down mode to Read
command (slow exit, lower power)
Internal Read to Precharge command delay
Write preamble
Write postamble
Write recovery time for write without AutoPrecharge
14)
14)18)
19)
tCK
20)
—
ns
21)
2
—
tCK
22)
tXARDS
6 – AL
—
tCK
22)
Exit precharge power-down to any valid
command (other than NOP or Deselect)
tXP
2
—
tCK
Exit Self-Refresh to non-Read command
tXSNR
tXSRD
tRFC +10
—
ns
200
—
tCK
Exit power down to any valid command
(other than NOP or Deselect)
Exit Self-Refresh to Read command
1) For details and notes see the relevant Qimonda component data sheet
2) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down
and then restarted through the specified initialization sequence before normal operation can continue.
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,
input reference level is the crosspoint when in differential strobe mode.
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.
7) The output timing reference voltage level is VTT.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to
the WR parameter stored in the MR.
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.
10) For timing definition, refer to the Component data sheet.
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate
mis-match between DQS / DQS and associated DQ in any given cycle.
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can
be greater than the minimum specification limits for tCL and tCH).
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Unbuffered DDR2 SDRAM Module
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These
parameters are verified by design and characterization, but not subject to production test.
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C
and 95 °C.
15) 0 °C≤ TCASE ≤ 85 °C
16) 85 °C < TCASE ≤ 95 °C
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 “Ordering Information for RoHS
Compliant Products” on Page 4.
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system
performance (bus turnaround) degrades accordingly.
20) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK
refers to the application clock period. WR refers to the WR parameter stored in the MRS.
21) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.
22) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active powerdown mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow
power-down exit timing tXARDS has to be satisfied.
3.3.3
ODT AC Electrical Characteristics
ODT AC Character. & Operating Conditions: Table 18 for DDR2–667 & DDR2–800 and Table 19 for DDR2–533 & DDR2–400
TABLE 18
ODT AC Character. and Operating Conditions for DDR2-667 & DDR2-800
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter / Condition
Values
Unit
Note
Min.
Max.
ODT turn-on delay
2
2
nCK
1)
ODT turn-on
tAC.MAX + 0.7 ns
2 tCK + tAC.MAX + 1 ns
ns
1)2)
ODT turn-on (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
1)
ODT turn-off delay
2.5
2.5
nCK
1)
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
1)3)
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ns
1)
ODT to Power Down Mode Entry Latency
3
—
nCK
1)
1)
ODT Power Down Exit Latency
8
—
nCK
1) New units, 'tCK.AVG' and 'nCK', are introduced in DDR2-667 and DDR2-800. Unit 'tCK.AVG' represents the actual tCK.AVG of the input clock
under operation. Unit 'nCK' represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and
DDR2-533, 'tCK' is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 × tCK.AVG+ tEPR.2PER(MIN).
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the
ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is 2 clock
cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.
3) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800,if tCK.AVG =
3 ns is assumed, tAOFD= 1.5 ns (0.5 × 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT
LOW and by counting the actual input clock edge.
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 19
ODT AC Character. and Operating Conditions for DDR2-533 & DDR2-400
Symbol
tAOND
tAON
tAONPD
tAOFD
tAOF
tAOFPD
tANPD
tAXPD
Parameter / Condition
Values
Unit
Min.
Max.
ODT turn-on delay
2
2
tCK
ODT turn-on
tAC.MAX + 1 ns
2 tCK + tAC.MAX + 1 ns
ns
ODT turn-on (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ODT turn-off delay
2.5
2.5
tCK
ODT turn-off
tAC.MAX + 0.6 ns
2.5 tCK + tAC.MAX + 1 ns
ns
ODT turn-off (Power-Down Modes)
tAC.MIN
tAC.MIN + 2 ns
ODT to Power Down Mode Entry Latency
3
—
ODT Power Down Exit Latency
8
—
tCK
tCK
Note
1)
ns
2)
ns
1) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the
ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns
(= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
3.4
IDD Specifications and Conditions
List of tables defining IDD Specifications and Conditions.
• Table 20 “IDD Measurement Conditions” on Page 32
• Table 21 “Definitions for IDD” on Page 33
• Table 22 “I DD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-25F-B2” on Page 34
• Table 23 “I DD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-2.5-B2” on Page 35
• Table 24 “I DD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3-B2” on Page 36
• Table 25 “I DD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3S-B2” on Page 37
• Table 26 “I DD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3.7-B2” on Page 38
TABLE 20
IDD Measurement Conditions
Parameter
Symbol Note
1)2)3)4)5)
Operating Current 0
IDD0
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between
valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.
Operating Current 1
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN,
tRCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and
control inputs are SWITCHING, Databus inputs are SWITCHING.
IDD1
6)
Precharge Standby Current
IDD2N
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING,
Databus inputs are SWITCHING.
Precharge Power-Down Current
Other control and address inputs are STABLE, Data bus inputs are FLOATING.
IDD2P
Precharge Quiet Standby Current
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,
Data bus inputs are FLOATING.
IDD2Q
Active Standby Current
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.
IDD3N
Active Power-Down Current
IDD3P(0)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);
Active Power-Down Current
IDD3P(1)
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs
are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);
Operating Current - Burst Read
IDD4R
All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX;
tRP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data
bus inputs are SWITCHING; IOUT = 0mA.
Operating Current - Burst Write
All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN;
tRAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are
SWITCHING; Data Bus inputs are SWITCHING;
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IDD4W
6)
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Parameter
Symbol Note
1)2)3)4)5)
Burst Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5B
Distributed Refresh Current
tCK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.
IDD5D
Self-Refresh Current
IDD6
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.
All Bank Interleave Read Current
IDD7
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.
3) Definitions for IDD see Table 21
4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P
6)
5) For details and notes see the relevant Qimonda component data sheet
6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.
TABLE 21
Definitions for IDD
Parameter
Description
LOW
VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN
STABLE
Inputs are stable at a HIGH or LOW level
FLOATING
Inputs are VREF = VDDQ /2
SWITCHING
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ
signals not including mask or strobes
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HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 22
IDD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-25F-B2
870
980
mA
2)
459
820
920
mA
3)
72
81
140
160
mA
3)
180
360
405
720
810
mA
3)
240
480
540
960
1080
mA
3)
156
312
351
620
700
mA
3)4)
52
104
117
210
230
mA
3)5)
720
1240
1395
1310
1480
mA
2)
800
1240
1395
1310
1480
mA
2)
580
1160
1305
1230
1390
mA
2)
44
88
99
180
200
mA
3)6)
36
72
81
144
162
mA
3)6)
1060
1360
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
2)
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
mA
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
840
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
Note1)
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
Unit
Product Type
Organization
256MB
512MB
512MB
1GB
1GB
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
×64
×64
×72
×64
×72
-25F
-25F
-25F
-25F
-25F
Symbol
Max
Max
Max
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P_0 (fast)
IDD3P_1 (slow)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
420
672
756
740
480
800
900
204
408
36
1530
1430
1610
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R and IDD7 are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
34
2)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 23
IDD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-2.5-B2
830
940
mA
2)
459
820
920
mA
3)
72
81
140
160
mA
3)
180
360
405
720
810
mA
3)
240
480
540
960
1080
mA
3)
156
312
351
620
700
mA
3)4)
52
104
117
210
230
mA
3)5)
720
1240
1395
1310
1480
mA
2)
800
1240
1395
1310
1480
mA
2)
580
1160
1305
1230
1390
mA
2)
44
88
99
180
200
mA
3)6)
36
72
81
144
162
mA
3)6)
1020
1280
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
2)
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
mA
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
800
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
Note1)
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
Unit
Product Type
Organization
256MB
512MB
512MB
1GB
1GB
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
×64
×64
×72
×64
×72
-2.5
-2.5
-2.5
-2.5
-2.5
Symbol
Max
Max
Max
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P_0 (fast)
IDD3P_1 (slow)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
400
640
720
710
460
760
855
204
408
36
1440
1350
1520
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R and IDD7 are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
35
2)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 24
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
IDD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3-B2
Organization
256MB
512MB
512MB
1GB
1GB
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
×64
×64
×72
×64
×72
-3
-3
-3
-3
-3
Symbol
Max
Max
Max
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P_0 (fast)
IDD3P_1 (slow)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
380
600
675
670
420
720
810
180
360
36
Unit
Note1)
760
mA
2)
790
890
mA
2)
405
720
810
mA
3)
72
81
140
160
mA
3)
160
320
360
640
720
mA
3)
200
400
450
800
900
mA
3)
132
264
297
530
590
mA
3)4)
52
104
117
210
230
mA
3)5)
620
1040
1170
1110
1250
mA
2)
680
1040
1170
1110
1250
mA
2)
560
1120
1260
1190
1340
mA
2)
44
88
99
180
200
mA
3)6)
36
72
81
144
162
mA
3)6)
1008
1280
1440
1350
1520
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R and IDD7 are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
36
2)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 25
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
IDD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3S-B2
Organization
256MB
512MB
512MB
1GB
1GB
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
×64
×64
×72
×64
×72
-3S
-3S
3S
-3S
-3S
Symbol
Max
Max
Max
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P_0 (fast)
IDD3P_1 (slow)
IDD4R
IDD4W
IDD5B
IDD5D
IDD6
IDD7
360
568
639
640
400
680
765
180
360
36
Unit
Note1)
720
mA
2)
750
850
mA
2)
405
720
810
mA
3)
72
81
140
160
mA
3)
160
320
360
640
720
mA
3)
200
400
450
800
900
mA
3)
132
264
297
530
590
mA
3)4)
52
104
117
210
230
mA
3)5)
620
1040
1170
1110
1250
mA
2)
680
1040
1170
1110
1250
mA
2)
560
1120
1260
1190
1340
mA
2)
44
88
99
180
200
mA
3)6)
36
72
81
144
162
mA
3)6)
960
1216
1368
1290
1450
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R and IDD7 are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
37
2)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 26
IDD Specification for HYS[64/72]T[32/64/128][0/9]xxEU-3.7-B2
670
760
mA
2)
342
610
680
mA
3)
72
81
140
160
mA
3)
140
280
315
560
630
mA
3)
172
344
387
690
770
mA
3)
112
224
252
450
500
mA
3)4)
52
104
117
210
230
mA
3)5)
520
880
990
950
1070
mA
2)
580
880
990
950
1070
mA
2)
520
1040
1170
1110
1250
mA
2)
IDD5D
44
88
99
180
200
mA
3)6)
IDD6
36
72
81
144
162
mA
3)6)
IDD7
920
1160
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
2)
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
mA
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
670
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
Note1)
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
Unit
Product Type
Organization
256MB
512MB
512MB
1GB
1GB
1 Rank
1 Rank
1 Rank
2 Ranks
2 Ranks
×64
×64
×72
×64
×72
-3.7
-3.7
-3.7
-3.7
-3.7
Symbol
Max
Max
Max
Max.
Max.
IDD0
IDD1
IDD2N
IDD2P
IDD2Q
IDD3N
IDD3P_0 (fast)
IDD3P_1 (slow)
IDD4R
IDD4W
IDD5B
320
520
585
590
360
600
675
152
304
36
1305
1230
1390
mA
1) Calculated values from component data. ODT disabled. IDD1, IDD4R and IDD7 are defined with the outputs disabled.
2) The other rank is in IDD2P Precharge Power-Down Current mode
3) Both ranks are in the same IDDcurrent mode
4) Fast: MRS(12)=0
5) Slow: MRS(12)=1
6) IDD5D and IDD6 values are for 0°C ≤ TCase ≤ 85°C
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
38
2)
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
4
SPD Codes
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.
List of SPD Code Tables
•
•
•
•
•
•
•
•
•
•
Table 27 “SPD Codes for PC2–6400–555” on Page 39
Table 28 “SPD Codes for PC2–6400–555” on Page 44
Table 29 “SPD Codes for PC2–6400–666” on Page 49
Table 30 “SPD Codes for PC2–6400–666” on Page 54
Table 31 “SPD Codes for PC2–5300–444” on Page 59
Table 32 “SPD Codes for PC2–5300–444” on Page 64
Table 33 “SPD Codes for PC2–5300–555” on Page 68
Table 34 “SPD Codes for PC2–5300–555” on Page 73
Table 35 “SPD Codes for PC2–4200–444” on Page 77
Table 36 “SPD Codes for PC2–4200–444” on Page 82
TABLE 27
Product Type
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
SPD Codes for PC2–6400–555
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400E–
555
PC2–
6400E–
555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
08
08
3
Number of Row Addresses
0D
0D
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
60
60
60
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
39
Internet Data Sheet
Product Type
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400E–
555
PC2–
6400E–
555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
6
Data Width
40
40
40
40
48
48
7
Not used
00
00
00
00
00
00
8
Interface Voltage Level
05
05
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
25
25
25
25
25
25
10
40
40
40
40
40
40
11
Error Correction Support (non-ECC, ECC)
00
00
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
82
82
13
Primary SDRAM Width
10
10
08
08
08
08
14
Error Checking SDRAM Width
00
00
00
00
08
08
15
Not used
00
00
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
01
01
20
DIMM Type Information
02
02
02
02
02
02
21
DIMM Attributes
00
00
00
00
00
00
22
Component Attributes
07
07
07
07
07
07
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
24
25
26
27
28
29
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
25
25
25
25
25
25
40
40
40
40
40
40
3D
3D
3D
3D
3D
3D
50
50
50
50
50
50
32
32
32
32
32
32
28
28
1E
1E
1E
1E
32
32
32
32
32
32
40
Internet Data Sheet
Product Type
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400E–
555
PC2–
6400E–
555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
30
tRAS.MIN [ns]
2D
2D
2D
2D
2D
2D
31
Module Density per Rank
40
40
80
80
80
80
32
17
17
17
17
17
17
25
25
25
25
25
25
05
05
05
05
05
05
12
12
12
12
12
12
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
39
40
33
34
35
3C
3C
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
Analysis Characteristics
00
00
00
00
00
00
30
30
30
30
30
30
39
39
39
39
39
39
69
69
69
69
69
69
80
80
80
80
80
80
14
14
14
14
14
14
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
1E
1E
1E
1E
1E
1E
46
PLL Relock Time
00
00
00
00
00
00
36
37
41
42
43
44
47
TCASE.MAX Delta / ∆T4R4W Delta
56
56
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
7A
7A
49
∆T0 (DT0)
7F
7F
5F
5F
5F
5F
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3B
3B
3B
3B
3B
3B
51
∆T2P (DT2P)
36
36
36
36
36
36
52
∆T3N (DT3N)
2E
2E
2E
2E
2E
2E
53
∆T3P.fast (DT3P fast)
5A
5A
5A
5A
5A
5A
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
41
Internet Data Sheet
Product Type
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400E–
555
PC2–
6400E–
555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
68
68
5A
5A
5A
5A
56
∆T5B (DT5B)
22
22
22
22
22
22
57
∆T7 (DT7)
3D
3D
27
27
27
27
58
Psi(ca) PLL
00
00
00
00
00
00
59
Psi(ca) REG
00
00
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
00
00
62
SPD Revision
12
12
12
12
12
12
63
Checksum of Bytes 0-62
52
52
37
37
49
49
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
xx
73
Product Type, Char 1
36
36
36
36
37
37
74
Product Type, Char 2
34
34
34
34
32
32
75
Product Type, Char 3
54
54
54
54
54
54
76
Product Type, Char 4
33
33
36
36
36
36
77
Product Type, Char 5
32
32
34
34
34
34
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
42
Internet Data Sheet
Product Type
HYS64T32000EU–25F–B2
HYS64T32900EU–25F–B2
HYS64T64000EU–25F–B2
HYS64T64900EU–25F–B2
HYS72T64000EU–25F–B2
HYS72T64900EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400U–
555
PC2–
6400E–
555
PC2–
6400E–
555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
78
Product Type, Char 6
30
39
30
39
30
39
79
Product Type, Char 7
30
30
30
30
30
30
80
Product Type, Char 8
30
30
30
30
30
30
81
Product Type, Char 9
45
45
45
45
45
45
82
Product Type, Char 10
55
55
55
55
55
55
83
Product Type, Char 11
32
32
32
32
32
32
84
Product Type, Char 12
35
35
35
35
35
35
85
Product Type, Char 13
46
46
46
46
46
46
86
Product Type, Char 14
42
42
42
42
42
42
87
Product Type, Char 15
32
32
32
32
32
32
88
Product Type, Char 16
20
20
20
20
20
20
89
Product Type, Char 17
20
20
20
20
20
20
90
Product Type, Char 18
20
20
20
20
20
20
91
Module Revision Code
3x
0x
3x
0x
3x
0x
92
Test Program Revision Code
xx
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
xx
95 - 98 Module Serial Number
xx
xx
xx
xx
xx
xx
99 127
Not used
00
00
00
00
00
00
128 255
Blank for customer use
FF
FF
FF
FF
FF
FF
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
43
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 28
Product Type
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
SPD Codes for PC2–6400–555
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
61
61
61
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
25
25
25
25
40
40
40
40
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
10
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
44
Internet Data Sheet
Product Type
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
22
Component Attributes
07
07
07
07
23
25
25
25
25
40
40
40
40
3D
3D
3D
3D
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
31
Module Density per Rank
32
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
39
Analysis Characteristics
40
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
PLL Relock Time
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
45
32
32
32
32
1E
1E
1E
1E
32
32
32
32
2D
2D
2D
2D
80
80
80
80
17
17
17
17
25
25
25
25
05
05
05
05
12
12
12
12
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
00
00
00
00
30
30
30
30
39
39
39
39
69
69
69
69
80
80
80
80
14
14
14
14
1E
1E
1E
1E
00
00
00
00
Internet Data Sheet
Product Type
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
49
∆T0 (DT0)
5F
5F
5F
5F
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3B
3B
3B
3B
51
∆T2P (DT2P)
36
36
36
36
52
∆T3N (DT3N)
2E
2E
2E
2E
53
∆T3P.fast (DT3P fast)
5A
5A
5A
5A
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
5A
5A
5A
5A
56
∆T5B (DT5B)
22
22
22
22
57
∆T7 (DT7)
27
27
27
27
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
38
38
4A
4A
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
46
Internet Data Sheet
Product Type
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
31
31
31
77
Product Type, Char 5
32
32
32
32
78
Product Type, Char 6
38
38
38
38
79
Product Type, Char 7
30
39
30
39
80
Product Type, Char 8
32
32
32
32
81
Product Type, Char 9
30
30
30
30
82
Product Type, Char 10
45
45
45
45
83
Product Type, Char 11
55
55
55
55
84
Product Type, Char 12
32
32
32
32
85
Product Type, Char 13
35
35
35
35
86
Product Type, Char 14
46
46
46
46
87
Product Type, Char 15
42
42
42
42
88
Product Type, Char 16
32
32
32
32
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
3x
0x
3x
0x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
47
Internet Data Sheet
Product Type
HYS64T128020EU–25F–B2
HYS64T128920EU–25F–B2
HYS72T128020EU–25F–B2
HYS72T128920EU–25F–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–555
PC2–
6400U–555
PC2–
6400E–555
PC2–
6400E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
HEX
HEX
HEX
HEX
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Description
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
48
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 29
Product Type
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
SPD Codes for PC2–6400–666
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
6400U– 6400U– 6400U– 6400U– 6400E–
666
666
666
666
666
PC2–
6400E–
666
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
08
08
3
Number of Row Addresses
0D
0D
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
60
60
60
6
Data Width
40
40
40
40
48
48
7
Not used
00
00
00
00
00
00
8
Interface Voltage Level
05
05
05
05
05
05
9
25
25
25
25
25
25
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
40
40
40
40
40
40
11
Error Correction Support (non-ECC, ECC)
00
00
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
82
82
13
Primary SDRAM Width
10
10
08
08
08
08
14
Error Checking SDRAM Width
00
00
00
00
08
08
15
Not used
00
00
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
01
01
20
DIMM Type Information
02
02
02
02
02
02
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
49
HEX
HEX
HEX
HEX
HEX
Internet Data Sheet
Product Type
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
6400U– 6400U– 6400U– 6400U– 6400E–
666
666
666
666
666
PC2–
6400E–
666
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
21
DIMM Attributes
00
00
00
00
00
00
22
Component Attributes
07
07
07
07
07
07
23
30
30
30
30
30
30
45
45
45
45
45
45
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
2D
2D
2D
31
Module Density per Rank
40
40
80
80
80
80
32
17
17
17
17
17
17
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
00
00
00
00
00
00
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
50
3D
3D
3D
3D
3D
3D
50
50
50
50
50
50
3C
3C
3C
3C
3C
3C
28
28
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
25
25
25
25
25
25
05
05
05
05
05
05
12
12
12
12
12
12
3C
3C
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
69
69
69
69
69
69
80
80
80
80
80
80
14
14
14
14
14
14
Internet Data Sheet
Product Type
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
6400U– 6400U– 6400U– 6400U– 6400E–
666
666
666
666
666
PC2–
6400E–
666
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
45
tQHS.MAX [ns]
1E
1E
1E
1E
1E
1E
46
PLL Relock Time
00
00
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
56
56
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
7A
7A
49
∆T0 (DT0)
77
77
5B
5B
5B
5B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3B
3B
3B
3B
3B
3B
51
∆T2P (DT2P)
36
36
36
36
36
36
52
∆T3N (DT3N)
2E
2E
2E
2E
2E
2E
53
∆T3P.fast (DT3P fast)
5A
5A
5A
5A
5A
5A
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
68
68
5A
5A
5A
5A
56
∆T5B (DT5B)
22
22
22
22
22
22
57
∆T7 (DT7)
3B
3B
25
25
25
25
58
Psi(ca) PLL
00
00
00
00
00
00
59
Psi(ca) REG
00
00
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
00
00
62
SPD Revision
12
12
12
12
12
12
63
Checksum of Bytes 0-62
3F
3F
28
28
3A
3A
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
7F
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
51
Internet Data Sheet
Product Type
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
6400U– 6400U– 6400U– 6400U– 6400E–
666
666
666
666
666
PC2–
6400E–
666
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
xx
73
Product Type, Char 1
36
36
36
36
37
37
74
Product Type, Char 2
34
34
34
34
32
32
75
Product Type, Char 3
54
54
54
54
54
54
76
Product Type, Char 4
33
33
36
36
36
36
77
Product Type, Char 5
32
32
34
34
34
34
78
Product Type, Char 6
30
39
30
39
30
39
79
Product Type, Char 7
30
30
30
30
30
30
80
Product Type, Char 8
30
30
30
30
30
30
81
Product Type, Char 9
45
45
45
45
45
45
82
Product Type, Char 10
55
55
55
55
55
55
83
Product Type, Char 11
32
32
32
32
32
32
84
Product Type, Char 12
2E
2E
2E
2E
2E
2E
85
Product Type, Char 13
35
35
35
35
35
35
86
Product Type, Char 14
42
42
42
42
42
42
87
Product Type, Char 15
32
32
32
32
32
32
88
Product Type, Char 16
20
20
20
20
20
20
89
Product Type, Char 17
20
20
20
20
20
20
90
Product Type, Char 18
20
20
20
20
20
20
91
Module Revision Code
3x
0x
3x
0x
3x
0x
92
Test Program Revision Code
xx
xx
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
52
Internet Data Sheet
Product Type
HYS64T32000EU–2.5–B2
HYS64T32900EU–2.5–B2
HYS64T64000EU–2.5–B2
HYS64T64900EU–2.5–B2
HYS72T64000EU–2.5–B2
HYS72T64900EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
6400U– 6400U– 6400U– 6400U– 6400E–
666
666
666
666
666
PC2–
6400E–
666
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
00
00
128 255
FF
FF
FF
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
53
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 30
Product Type
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
SPD Codes for PC2–6400–666
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
61
61
61
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
25
25
25
25
10
40
40
40
40
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
70
70
70
70
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
07
07
07
07
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
54
Internet Data Sheet
Product Type
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
30
30
30
30
45
45
45
45
3D
3D
3D
3D
50
50
50
50
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
2D
2D
2D
2D
31
Module Density per Rank
80
80
80
80
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
17
17
17
17
25
25
25
25
05
05
05
05
12
12
12
12
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
00
40
00
00
00
00
3C
3C
3C
3C
69
69
69
69
80
80
80
80
14
14
14
14
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
1E
1E
1E
1E
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
50
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
55
Internet Data Sheet
Product Type
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
48
Psi(T-A) DRAM
7A
7A
7A
7A
49
∆T0 (DT0)
5B
5B
5B
5B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
3B
3B
3B
3B
51
∆T2P (DT2P)
36
36
36
36
52
∆T3N (DT3N)
2E
2E
2E
2E
53
∆T3P.fast (DT3P fast)
5A
5A
5A
5A
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
5A
5A
5A
5A
56
∆T5B (DT5B)
22
22
22
22
57
∆T7 (DT7)
25
25
25
25
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
29
29
3B
3B
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
56
Internet Data Sheet
Product Type
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
31
31
31
77
Product Type, Char 5
32
32
32
32
78
Product Type, Char 6
38
38
38
38
79
Product Type, Char 7
30
39
30
39
80
Product Type, Char 8
32
32
32
32
81
Product Type, Char 9
30
30
30
30
82
Product Type, Char 10
45
45
45
45
83
Product Type, Char 11
55
55
55
55
84
Product Type, Char 12
32
32
32
32
85
Product Type, Char 13
2E
2E
2E
2E
86
Product Type, Char 14
35
35
35
35
87
Product Type, Char 15
42
42
42
42
88
Product Type, Char 16
32
32
32
32
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
3x
0x
3x
0x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
57
Internet Data Sheet
Product Type
HYS64T128020EU–2.5–B2
HYS64T128920EU–2.5–B2
HYS72T128020EU–2.5–B2
HYS72T128920EU–2.5–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
6400U–666
PC2–
6400U–666
PC2–
6400E–666
PC2–
6400E–666
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
HEX
HEX
HEX
HEX
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Description
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
58
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 31
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
SPD Codes for PC2–5300–444
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
08
08
3
Number of Row Addresses
0D
0D
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
60
60
60
6
Data Width
40
40
40
40
48
48
7
Not used
00
00
00
00
00
00
8
Interface Voltage Level
05
05
05
05
05
05
9
30
30
30
30
30
30
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
45
45
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
82
82
13
Primary SDRAM Width
10
10
08
08
08
08
14
Error Checking SDRAM Width
00
00
00
00
08
08
15
Not used
00
00
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
01
01
20
DIMM Type Information
02
02
02
02
02
02
21
DIMM Attributes
00
00
00
00
00
00
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
59
Internet Data Sheet
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
22
Component Attributes
07
07
07
07
07
07
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
30
30
30
30
30
30
45
45
45
45
45
45
50
50
50
50
50
50
60
60
60
60
60
60
30
30
30
30
30
30
28
28
1E
1E
1E
1E
30
30
30
30
30
30
2D
2D
2D
2D
2D
2D
31
Module Density per Rank
40
40
80
80
80
80
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
20
20
20
20
20
20
27
27
27
27
27
27
10
10
10
10
10
10
17
17
17
17
17
17
3C
3C
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
1E
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
00
00
00
40
00
00
00
00
00
00
39
39
39
39
39
39
69
69
69
69
69
69
80
80
80
80
80
80
18
18
18
18
18
18
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
PLL Relock Time
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
60
22
22
22
22
22
22
00
00
00
00
00
00
Internet Data Sheet
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
47
TCASE.MAX Delta / ∆T4R4W Delta
54
54
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
7A
7A
49
∆T0 (DT0)
6F
6F
53
53
53
53
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
34
34
34
34
34
34
51
∆T2P (DT2P)
36
36
36
36
36
36
52
∆T3N (DT3N)
27
27
27
27
27
27
53
∆T3P.fast (DT3P fast)
4C
4C
4C
4C
4C
4C
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
5A
5A
4C
4C
4C
4C
56
∆T5B (DT5B)
20
20
20
20
20
20
57
∆T7 (DT7)
3A
3A
25
25
25
25
58
Psi(ca) PLL
00
00
00
00
00
00
59
Psi(ca) REG
00
00
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
00
00
62
SPD Revision
12
12
12
12
12
12
63
Checksum of Bytes 0-62
0B
0B
F7
F7
09
09
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
00
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
61
Internet Data Sheet
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
72
Module Manufacturer Location
xx
xx
xx
xx
xx
xx
73
Product Type, Char 1
36
36
36
36
37
37
74
Product Type, Char 2
34
34
34
34
32
32
75
Product Type, Char 3
54
54
54
54
54
54
76
Product Type, Char 4
33
33
36
36
36
36
77
Product Type, Char 5
32
32
34
34
34
34
78
Product Type, Char 6
30
39
30
39
30
39
79
Product Type, Char 7
30
30
30
30
30
30
80
Product Type, Char 8
30
30
30
30
30
30
81
Product Type, Char 9
45
45
45
45
45
45
82
Product Type, Char 10
55
55
55
55
55
55
83
Product Type, Char 11
33
33
33
33
33
33
84
Product Type, Char 12
42
42
42
42
42
42
85
Product Type, Char 13
32
32
32
32
32
32
86
Product Type, Char 14
20
20
20
20
20
20
87
Product Type, Char 15
20
20
20
20
20
20
88
Product Type, Char 16
20
20
20
20
20
20
89
Product Type, Char 17
20
20
20
20
20
20
90
Product Type, Char 18
20
20
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
62
Internet Data Sheet
Product Type
HYS64T32000EU–3–B2
HYS64T32900EU–3–B2
HYS64T64000EU–3–B2
HYS64T64900EU–3–B2
HYS72T64000EU–3–B2
HYS72T64900EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
HEX
HEX
HEX
HEX
HEX
HEX
99 - 127 Not used
00
00
00
00
00
00
128 255
FF
FF
FF
FF
FF
FF
Description
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
63
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 32
Product Type
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
SPD Codes for PC2–5300–444
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
61
61
61
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
30
30
30
30
10
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
07
07
07
07
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
64
Internet Data Sheet
Product Type
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
30
30
30
30
45
45
45
45
50
50
50
50
60
60
60
60
30
30
30
30
1E
1E
1E
1E
30
30
30
30
2D
2D
2D
2D
31
Module Density per Rank
80
80
80
80
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
20
20
20
20
27
27
27
27
10
10
10
10
17
17
17
17
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
00
40
00
00
00
00
39
39
39
39
69
69
69
69
80
80
80
80
18
18
18
18
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
46
PLL Relock Time
41
42
43
44
22
22
22
22
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
65
Internet Data Sheet
Product Type
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
49
∆T0 (DT0)
53
53
53
53
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
34
34
34
34
51
∆T2P (DT2P)
36
36
36
36
52
∆T3N (DT3N)
27
27
27
27
53
∆T3P.fast (DT3P fast)
4C
4C
4C
4C
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4C
4C
4C
4C
56
∆T5B (DT5B)
20
20
20
20
57
∆T7 (DT7)
25
25
25
25
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
F8
F8
0A
0A
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
66
Internet Data Sheet
Product Type
HYS64T128020EU–3–B2
HYS64T128920EU–3–B2
HYS72T128020EU–3–B2
HYS72T128920EU–3–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–444
PC2–
5300U–444
PC2–
5300E–444
PC2–
5300E–444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
31
31
31
77
Product Type, Char 5
32
32
32
32
78
Product Type, Char 6
38
38
38
38
79
Product Type, Char 7
30
39
30
39
80
Product Type, Char 8
32
32
32
32
81
Product Type, Char 9
30
30
30
30
82
Product Type, Char 10
45
45
45
45
83
Product Type, Char 11
55
55
55
55
84
Product Type, Char 12
33
33
33
33
85
Product Type, Char 13
42
42
42
42
86
Product Type, Char 14
32
32
32
32
87
Product Type, Char 15
20
20
20
20
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
67
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 33
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
SPD Codes for PC2–5300–555
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
555
555
555
555
555
555
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
08
08
3
Number of Row Addresses
0D
0D
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
60
60
60
6
Data Width
40
40
40
40
48
48
7
Not used
00
00
00
00
00
00
8
Interface Voltage Level
05
05
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
30
30
30
30
30
30
10
45
45
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
82
82
13
Primary SDRAM Width
10
10
08
08
08
08
14
Error Checking SDRAM Width
00
00
00
00
08
08
15
Not used
00
00
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
01
01
20
DIMM Type Information
02
02
02
02
02
02
21
DIMM Attributes
00
00
00
00
00
00
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
68
Internet Data Sheet
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
555
555
555
555
555
555
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
22
Component Attributes
07
07
07
07
07
07
23
3D
3D
3D
3D
3D
3D
50
50
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
2D
2D
2D
31
Module Density per Rank
40
40
80
80
80
80
32
20
20
20
20
20
20
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
00
00
00
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
45
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
69
50
50
50
50
50
50
60
60
60
60
60
60
3C
3C
3C
3C
3C
3C
28
28
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
27
27
27
27
27
27
10
10
10
10
10
10
17
17
17
17
17
17
3C
3C
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
69
69
69
69
69
69
80
80
80
80
80
80
18
18
18
18
18
18
22
22
22
22
22
22
Internet Data Sheet
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
555
555
555
555
555
555
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
46
PLL Relock Time
00
00
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
54
54
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
7A
7A
49
∆T0 (DT0)
67
67
4B
4B
4B
4B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
34
34
34
34
34
34
51
∆T2P (DT2P)
36
36
36
36
36
36
52
∆T3N (DT3N)
27
27
27
27
27
27
53
∆T3P.fast (DT3P fast)
4C
4C
4C
4C
4C
4C
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
5A
5A
4C
4C
4C
4C
56
∆T5B (DT5B)
20
20
20
20
20
20
57
∆T7 (DT7)
38
38
23
23
23
23
58
Psi(ca) PLL
00
00
00
00
00
00
59
Psi(ca) REG
00
00
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
00
00
62
SPD Revision
12
12
12
12
12
12
63
Checksum of Bytes 0-62
34
34
20
20
32
32
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
51
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
70
Internet Data Sheet
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
555
555
555
555
555
555
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
xx
73
Product Type, Char 1
36
36
36
36
37
37
74
Product Type, Char 2
34
34
34
34
32
32
75
Product Type, Char 3
54
54
54
54
54
54
76
Product Type, Char 4
33
33
36
36
36
36
77
Product Type, Char 5
32
32
34
34
34
34
78
Product Type, Char 6
30
39
30
39
30
39
79
Product Type, Char 7
30
30
30
30
30
30
80
Product Type, Char 8
30
30
30
30
30
30
81
Product Type, Char 9
45
45
45
45
45
45
82
Product Type, Char 10
55
55
55
55
55
55
83
Product Type, Char 11
33
33
33
33
33
33
84
Product Type, Char 12
53
53
53
53
53
53
85
Product Type, Char 13
42
42
42
42
42
42
86
Product Type, Char 14
32
32
32
32
32
32
87
Product Type, Char 15
20
20
20
20
20
20
88
Product Type, Char 16
20
20
20
20
20
20
89
Product Type, Char 17
20
20
20
20
20
20
90
Product Type, Char 18
20
20
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
71
Internet Data Sheet
Product Type
HYS64T32000EU–3S–B2
HYS64T32900EU–3S–B2
HYS64T64000EU–3S–B2
HYS64T64900EU–3S–B2
HYS72T64000EU–3S–B2
HYS72T64900EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
5300U– 5300U– 5300U– 5300U– 5300E– 5300E–
555
555
555
555
555
555
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
00
00
128 255
FF
FF
FF
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
72
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 34
Product Type
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
SPD Codes for PC2–5300–555
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
61
61
61
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
30
30
30
30
45
45
45
45
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
10
21
DIMM Attributes
00
00
00
00
22
Component Attributes
07
07
07
07
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
73
Internet Data Sheet
Product Type
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
3D
3D
3D
3D
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
2D
31
Module Density per Rank
80
80
80
80
32
20
20
20
20
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
00
00
00
00
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
45
50
50
50
50
60
60
60
60
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
27
27
27
27
10
10
10
10
17
17
17
17
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
69
69
69
69
80
80
80
80
18
18
18
18
22
22
22
22
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
50
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
74
Internet Data Sheet
Product Type
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
48
Psi(T-A) DRAM
7A
7A
7A
7A
49
∆T0 (DT0)
4B
4B
4B
4B
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
34
34
34
34
51
∆T2P (DT2P)
36
36
36
36
52
∆T3N (DT3N)
27
27
27
27
53
∆T3P.fast (DT3P fast)
4C
4C
4C
4C
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4C
4C
4C
4C
56
∆T5B (DT5B)
20
20
20
20
57
∆T7 (DT7)
23
23
23
23
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
21
21
33
33
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
75
Internet Data Sheet
Product Type
HYS64T128020EU–3S–B2
HYS64T128920EU–3S–B2
HYS72T128020EU–3S–B2
HYS72T128920EU–3S–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
5300U–555
PC2–
5300U–555
PC2–
5300E–555
PC2–
5300E–555
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
31
31
31
77
Product Type, Char 5
32
32
32
32
78
Product Type, Char 6
38
38
38
38
79
Product Type, Char 7
30
39
30
39
80
Product Type, Char 8
32
32
32
32
81
Product Type, Char 9
30
30
30
30
82
Product Type, Char 10
45
45
45
45
83
Product Type, Char 11
55
55
55
55
84
Product Type, Char 12
33
33
33
33
85
Product Type, Char 13
53
53
53
53
86
Product Type, Char 14
42
42
42
42
87
Product Type, Char 15
32
32
32
32
88
Product Type, Char 16
20
20
20
20
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
76
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 35
Product Type
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
SPD Codes for PC2–4200–444
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
4200U– 4200U– 4200U– 4200U– 4200E– 4200E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
08
08
3
Number of Row Addresses
0D
0D
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
60
60
60
60
60
60
6
Data Width
40
40
40
40
48
48
7
Not used
00
00
00
00
00
00
8
Interface Voltage Level
05
05
05
05
05
05
9
3D
3D
3D
3D
3D
3D
10
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
50
50
50
50
50
50
11
Error Correction Support (non-ECC, ECC)
00
00
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
82
82
13
Primary SDRAM Width
10
10
08
08
08
08
14
Error Checking SDRAM Width
00
00
00
00
08
08
15
Not used
00
00
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
01
01
20
DIMM Type Information
02
02
02
02
02
02
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
77
Internet Data Sheet
Product Type
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
4200U– 4200U– 4200U– 4200U– 4200E– 4200E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
21
DIMM Attributes
00
00
00
00
00
00
22
Component Attributes
07
07
07
07
07
07
23
3D
3D
3D
3D
3D
3D
50
50
50
50
50
50
30
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
2D
2D
2D
2D
2D
2D
31
Module Density per Rank
40
40
80
80
80
80
32
25
25
25
25
25
25
38
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
1E
1E
1E
1E
1E
1E
39
Analysis Characteristics
00
00
00
00
00
00
40
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
00
00
00
00
00
00
24
25
26
27
28
29
33
34
35
36
37
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
78
50
50
50
50
50
50
60
60
60
60
60
60
3C
3C
3C
3C
3C
3C
28
28
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
37
37
37
37
37
37
10
10
10
10
10
10
22
22
22
22
22
22
3C
3C
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
3C
3C
3C
3C
3C
3C
69
69
69
69
69
69
80
80
80
80
80
80
1E
1E
1E
1E
1E
1E
Internet Data Sheet
Product Type
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
4200U– 4200U– 4200U– 4200U– 4200E– 4200E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
45
tQHS.MAX [ns]
28
28
28
28
28
28
46
PLL Relock Time
00
00
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
54
54
50
50
50
50
48
Psi(T-A) DRAM
7A
7A
7A
7A
7A
7A
49
∆T0 (DT0)
5B
5B
43
43
43
43
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
2C
2C
2C
2C
2C
2C
51
∆T2P (DT2P)
36
36
36
36
36
36
52
∆T3N (DT3N)
21
21
21
21
21
21
53
∆T3P.fast (DT3P fast)
41
41
41
41
41
41
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
4C
4C
40
40
40
40
56
∆T5B (DT5B)
1E
1E
1E
1E
1E
1E
57
∆T7 (DT7)
35
35
22
22
22
22
58
Psi(ca) PLL
00
00
00
00
00
00
59
Psi(ca) REG
00
00
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
00
00
62
SPD Revision
12
12
12
12
12
12
63
Checksum of Bytes 0-62
40
40
34
34
46
46
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
7F
7F
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
79
Internet Data Sheet
Product Type
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
4200U– 4200U– 4200U– 4200U– 4200E– 4200E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
xx
xx
73
Product Type, Char 1
36
36
36
36
37
37
74
Product Type, Char 2
34
34
34
34
32
32
75
Product Type, Char 3
54
54
54
54
54
54
76
Product Type, Char 4
33
33
36
36
36
36
77
Product Type, Char 5
32
32
34
34
34
34
78
Product Type, Char 6
30
39
30
39
30
39
79
Product Type, Char 7
30
30
30
30
30
30
80
Product Type, Char 8
30
30
30
30
30
30
81
Product Type, Char 9
45
45
45
45
45
45
82
Product Type, Char 10
55
55
55
55
55
55
83
Product Type, Char 11
33
33
33
33
33
33
84
Product Type, Char 12
2E
2E
2E
2E
2E
2E
85
Product Type, Char 13
37
37
37
37
37
37
86
Product Type, Char 14
42
42
42
42
42
42
87
Product Type, Char 15
32
32
32
32
32
32
88
Product Type, Char 16
20
20
20
20
20
20
89
Product Type, Char 17
20
20
20
20
20
20
90
Product Type, Char 18
20
20
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
80
Internet Data Sheet
Product Type
HYS64T32000EU–3.7–B2
HYS64T32900EU–3.7–B2
HYS64T64000EU–3.7–B2
HYS64T64900EU–3.7–B2
HYS72T64000EU–3.7–B2
HYS72T64900EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
256MB
256MB
512MB
512MB
512MB
512MB
×64
×64
×64
×64
×72
×72
1 Rank
(×16)
1 Rank
(×16)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
1 Rank
(×8)
Label Code
PC2–
PC2–
PC2–
PC2–
PC2–
PC2–
4200U– 4200U– 4200U– 4200U– 4200E– 4200E–
444
444
444
444
444
444
JEDEC SPD Revision
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
HEX
HEX
93
Module Manufacturing Date Year
xx
xx
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
xx
xx
99 - 127 Not used
00
00
00
00
00
00
128 255
FF
FF
FF
FF
FF
FF
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
81
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
TABLE 36
Product Type
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
SPD Codes for PC2–4200–444
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–4200E– PC2–4200E–
444
444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
0
Programmed SPD Bytes in EEPROM
80
80
80
80
1
Total number of Bytes in EEPROM
08
08
08
08
2
Memory Type (DDR2)
08
08
08
08
3
Number of Row Addresses
0E
0E
0E
0E
4
Number of Column Addresses
0A
0A
0A
0A
5
DIMM Rank and Stacking Information
61
61
61
61
6
Data Width
40
40
48
48
7
Not used
00
00
00
00
8
Interface Voltage Level
05
05
05
05
9
tCK @ CLMAX (Byte 18) [ns]
tAC SDRAM @ CLMAX (Byte 18) [ns]
3D
3D
3D
3D
10
50
50
50
50
11
Error Correction Support (non-ECC, ECC)
00
00
02
02
12
Refresh Rate and Type
82
82
82
82
13
Primary SDRAM Width
08
08
08
08
14
Error Checking SDRAM Width
00
00
08
08
15
Not used
00
00
00
00
16
Burst Length Supported
0C
0C
0C
0C
17
Number of Banks on SDRAM Device
04
04
04
04
18
Supported CAS Latencies
38
38
38
38
19
DIMM Mechanical Characteristics
01
01
01
01
20
DIMM Type Information
02
02
02
02
21
DIMM Attributes
00
00
00
00
22
Component Attributes
07
07
07
07
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
82
Internet Data Sheet
Product Type
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–4200E– PC2–4200E–
444
444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
23
tCK @ CLMAX -1 (Byte 18) [ns]
tAC SDRAM @ CLMAX -1 [ns]
tCK @ CLMAX -2 (Byte 18) [ns]
tAC SDRAM @ CLMAX -2 [ns]
tRP.MIN [ns]
tRRD.MIN [ns]
tRCD.MIN [ns]
tRAS.MIN [ns]
24
25
26
27
28
29
30
3D
3D
3D
3D
50
50
50
50
50
50
50
50
60
60
60
60
3C
3C
3C
3C
1E
1E
1E
1E
3C
3C
3C
3C
2D
2D
2D
2D
31
Module Density per Rank
80
80
80
80
32
tAS.MIN and tCS.MIN [ns]
tAH.MIN and tCH.MIN [ns]
tDS.MIN [ns]
tDH.MIN [ns]
tWR.MIN [ns]
tWTR.MIN [ns]
tRTP.MIN [ns]
25
25
25
25
37
37
37
37
10
10
10
10
22
22
22
22
3C
3C
3C
3C
1E
1E
1E
1E
1E
1E
1E
1E
33
34
35
36
37
38
39
Analysis Characteristics
00
00
00
00
40
00
00
00
00
3C
3C
3C
3C
69
69
69
69
80
80
80
80
1E
1E
1E
1E
45
tRC and tRFC Extension
tRC.MIN [ns]
tRFC.MIN [ns]
tCK.MAX [ns]
tDQSQ.MAX [ns]
tQHS.MAX [ns]
28
28
28
28
46
PLL Relock Time
00
00
00
00
47
TCASE.MAX Delta / ∆T4R4W Delta
50
50
50
50
41
42
43
44
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
83
Internet Data Sheet
Product Type
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–4200E– PC2–4200E–
444
444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
48
Psi(T-A) DRAM
7A
7A
7A
7A
49
∆T0 (DT0)
43
43
43
43
50
∆T2N (DT2N, UDIMM) or ∆T2Q (DT2Q, RDIMM)
2C
2C
2C
2C
51
∆T2P (DT2P)
36
36
36
36
52
∆T3N (DT3N)
21
21
21
21
53
∆T3P.fast (DT3P fast)
41
41
41
41
54
∆T3P.slow (DT3P slow)
2A
2A
2A
2A
55
∆T4R (DT4R) / ∆T4R4W Sign (DT4R4W)
40
40
40
40
56
∆T5B (DT5B)
1E
1E
1E
1E
57
∆T7 (DT7)
22
22
22
22
58
Psi(ca) PLL
00
00
00
00
59
Psi(ca) REG
00
00
00
00
60
∆TPLL (DTPLL)
00
00
00
00
61
∆TREG (DTREG) / Toggle Rate
00
00
00
00
62
SPD Revision
12
12
12
12
63
Checksum of Bytes 0-62
35
35
47
47
64
Manufacturer’s JEDEC ID Code (1)
7F
7F
7F
7F
65
Manufacturer’s JEDEC ID Code (2)
7F
7F
7F
7F
66
Manufacturer’s JEDEC ID Code (3)
7F
7F
7F
7F
67
Manufacturer’s JEDEC ID Code (4)
7F
7F
7F
7F
68
Manufacturer’s JEDEC ID Code (5)
7F
7F
7F
7F
69
Manufacturer’s JEDEC ID Code (6)
51
51
51
51
70
Manufacturer’s JEDEC ID Code (7)
00
00
00
00
71
Manufacturer’s JEDEC ID Code (8)
00
00
00
00
72
Module Manufacturer Location
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
84
Internet Data Sheet
Product Type
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–4200E– PC2–4200E–
444
444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
Description
HEX
HEX
HEX
HEX
73
Product Type, Char 1
36
36
37
37
74
Product Type, Char 2
34
34
32
32
75
Product Type, Char 3
54
54
54
54
76
Product Type, Char 4
31
31
31
31
77
Product Type, Char 5
32
32
32
32
78
Product Type, Char 6
38
38
38
38
79
Product Type, Char 7
30
39
30
39
80
Product Type, Char 8
32
32
32
32
81
Product Type, Char 9
30
30
30
30
82
Product Type, Char 10
45
45
45
45
83
Product Type, Char 11
55
55
55
55
84
Product Type, Char 12
33
33
33
33
85
Product Type, Char 13
2E
2E
2E
2E
86
Product Type, Char 14
37
37
37
37
87
Product Type, Char 15
42
42
42
42
88
Product Type, Char 16
32
32
32
32
89
Product Type, Char 17
20
20
20
20
90
Product Type, Char 18
20
20
20
20
91
Module Revision Code
2x
0x
2x
0x
92
Test Program Revision Code
xx
xx
xx
xx
93
Module Manufacturing Date Year
xx
xx
xx
xx
94
Module Manufacturing Date Week
xx
xx
xx
xx
95 - 98
Module Serial Number
xx
xx
xx
xx
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
85
Internet Data Sheet
Product Type
HYS64T128020EU–3.7–B2
HYS64T128920EU–3.7–B2
HYS72T128020EU–3.7–B2
HYS72T128920EU–3.7–B2
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Organization
1 GByte
1 GByte
1 GByte
1 GByte
×64
×64
×72
×72
2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8) 2 Ranks (×8)
Label Code
PC2–
4200U–444
PC2–
4200U–444
PC2–4200E– PC2–4200E–
444
444
JEDEC SPD Revision
Rev. 1.2
Rev. 1.2
Rev. 1.2
Rev. 1.2
Byte#
HEX
HEX
HEX
HEX
99 - 127 Not used
00
00
00
00
128 255
FF
FF
FF
FF
Description
Blank for customer use
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
86
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
5
Package Outlines
FIGURE 6
Package Outline Raw Card C L-DIM-240-3
$ % &
0$
;
[
&
“
“ $
“
%
“
'HWD LORIFR QWD FWV “ $ % &
%XUU PD [ DOORZ
H G
*/' Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
87
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 7
¡ $ % &
Package Outline L-DIM-240-8
0$;
“
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&
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“
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“
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$
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Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
88
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 8
¡ $ % &
Package Outline L-DIM-240-9
0$;
“
“
&
“
“
“
“
“
“
“
“
$
“
%
0,1
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$ % &
%XUU PD[ DOORZHG
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Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
89
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 9
¡ $ % &
Package Outline Raw Card F L-DIM-240-6
0$;
“
“
&
“
“
“
“
“
“
“
“
$
“
%
0,1
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'HWDLO RI FRQWDFWV
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$ % &
%XUU PD[ DOORZHG
*/'
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
90
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
FIGURE 10
¡ $ % &
Package Outline Raw Card G L-DIM-240-7
0$;
“
“
&
“
“
“
“
“
“
“
“
$
“
%
0,1
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'HWDLO RI FRQWDFWV
“
$ % &
%XUU PD[ DOORZHG
*/'
Notes
1. Drawing according to ISO 8015
2. Dimensions in mm
3. General tolerances +/- 0.15
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
91
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
6
Product Type Nomenclature
This chapter describes Product Type Nomenclature for DDR2 DRAMs and DIMMs.
Qimonda’s nomenclature uses simple coding combined with some propriatory coding. Table 37 provides examples for module
and component product type number as well as the field number. The detailed field description together with possible values
and coding explanation is listed for modules in Table 38 and for components in Table 39.
TABLE 37
Nomenclature Fields and Examples
Example for
Field Number
1
2
3
4
5
6
7
8
9
10
11
Micro-DIMM
HYS
64
T
64/128
0
2
0
K
M
–5
–A
DDR2 DRAM
HYB
18
T
512/1G 16
0
A
C
–5
TABLE 38
DDR2 DIMM Nomenclature
Field
Description
Values
Coding
1
Qimonda Module Prefix
HYS
Constant
2
Module Data Width [bit]
64
Non-ECC
72
ECC
3
DRAM Technology
T
DDR2
4
Memory Density per I/O [Mbit];
Module Density1)
32
256 MByte
64
512 MByte
128
1 GByte
256
2 GByte
512
4 GByte
5
Raw Card Generation
0 .. 9
Look up table
6
Number of Module Ranks
0, 2, 4
1, 2, 4
7
Product Variations
0 .. 9
Look up table
8
Package, Lead-Free Status
A .. Z
Look up table
9
Module Type
D
SO-DIMM
M
Micro-DIMM
R
Registered
U
Unbuffered
F
Fully Buffered
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
92
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Field
Description
Values
Coding
10
Speed Grade
–2.5F
PC2–6400 5–5–5
–2.5
PC2–6400 6–6–6
11
Die Revision
–3
PC2–5300 4–4–4
–3S
PC2–5300 5–5–5
–3.7
PC2–4200 4–4–4
–5
PC2–3200 3–3–3
–A
First
–B
Second
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall
module memory density in MBytes as listed in column “Coding”.
TABLE 39
DDR2 DRAM Nomenclature
Field
Description
Values
Coding
1
2
Qimonda Component Prefix
HYB
Constant
Interface Voltage [V]
18
SSTL_18
3
DRAM Technology
T
DDR2
4
Component Density [Mbit]
256
256 Mbit
512
512 Mbit
1G
1 Gbit
2G
2 Gbit
40
×4
80
×8
16
×16
0 .. 9
Look up table
5+6
Number of I/Os
7
Product Variations
8
Die Revision
9
10
Package, Lead-Free Status
Speed Grade
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
A
First
B
Second
C
FBGA, lead-containing
F
FBGA, lead-free
–25F
DDR2-800 5-5-5
–2.5
DDR2-800 6-6-6
–3
DDR2-667 4-4-4
–3S
DDR2-667 5-5-5
–3.7
DDR2-533 4-4-4
–5
DDR2-400 3-3-3
93
Internet Data Sheet
HYS[64/72]T[32/64/128][0/9]xxEU-[25F/2.5/3/3S/3.7]-B2
Unbuffered DDR2 SDRAM Module
Table of Contents
1
1.1
1.2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.1.1
3.2
3.3
3.3.1
3.3.2
3.3.3
3.4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Speed Grade Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRAM Component Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
16
16
16
17
18
18
21
30
32
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Rev. 1.0, 2006-10
10202006-L0SM-FEYT
94
Internet Data Sheet
Edition 2006-10
Published by Qimonda AG
Gustav-Heinemann-Ring 212
D-81739 München, Germany
© Qimonda AG 2006.
All Rights Reserved.
Legal Disclaimer
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Qimonda Office.
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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