Hitachi HZ30B3 Silicon epitaxial planar zener diode for stabilized power supply Datasheet

HZ Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
ADE-208-117B(Z)
Rev. 2
Nov. 1999
Features
• Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
Ordering Information
Type No.
Mark
Package Code
HZ Series
Type No.
DO-35
Outline
1
7
B2
2
Type No.
Cathode band
1. Cathode
2. Anode
HZ Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
500
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
-55 to +175
°C
Reverese Current
Dynamic Resistance
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*
1
Test
Condition
µA)
IR (µ
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZ2
A1
1.6
1.8
5
25
0.5
100
5
A2
1.7
1.9
A3
1.8
2.0
B1
1.9
2.1
5
5
0.5
100
5
B2
2.0
2.2
B3
2.1
2.3
C1
2.2
2.4
C2
2.3
2.5
C3
2.4
2.6
A1
2.5
2.7
5
5
0.5
100
5
A2
2.6
2.8
A3
2.7
2.9
B1
2.8
3.0
B2
2.9
3.1
B3
3.0
3.2
C1
3.1
3.3
C2
3.2
3.4
C3
3.3
3.5
A1
3.4
3.6
5
5
1.0
100
5
A2
3.5
3.7
A3
3.6
3.8
HZ3
HZ4
Note:
1. Tested with DC.
Rev.2, Nov. 1999, page 2 of 8
HZ Series
Zener Voltage
VZ (V)*
1
Reverese Current
Dynamic Resistance
Test
Condition
µA)
IR (µ
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZ4
B1
3.7
3.9
5
5
1.0
100
5
B2
3.8
4.0
B3
3.9
4.1
C1
4.0
4.2
C2
4.1
4.3
C3
4.2
4.4
A1
4.3
4.5
5
5
1.5
100
5
A2
4.4
4.6
A3
4.5
4.7
B1
4.6
4.8
B2
4.7
4.9
B3
4.8
5.0
C1
4.9
5.1
C2
5.0
5.2
C3
5.1
5.3
A1
5.2
5.5
5
5
2.0
40
5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
C2
6.0
6.3
C3
6.1
6.4
A1
6.3
6.6
5
1
3.5
15
5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
HZ5
HZ6
HZ7
Note:
1. Tested with DC.
Rev.2, Nov. 1999, page 3 of 8
HZ Series
Zener Voltage
VZ (V)*
1
Reverese Current
Dynamic Resistance
Test
Condition
µA)
IR (µ
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZ7
C1
7.2
7.6
5
1
3.5
15
5
C2
7.3
7.7
C3
7.5
7.9
A1
7.7
8.1
5
1
5.0
20
5
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
A1
9.5
9.9
5
1
7.5
25
5
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
C1
10.9
11.3
C2
11.1
11.6
C3
11.4
11.9
A1
11.6
12.1
5
1
9.5
35
5
A2
11.9
12.4
A3
12.2
12.7
B1
12.4
12.9
B2
12.6
13.1
B3
12.9
13.4
C1
13.2
13.7
C2
13.5
14.0
C3
13.8
14.3
HZ9
HZ11
HZ12
Note:
1. Tested with DC.
Rev.2, Nov. 1999, page 4 of 8
HZ Series
Zener Voltage
VZ (V)*
1
Reverese Current
Dynamic Resistance
Test
Condition
µA)
IR (µ
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZ15
1
14.1
14.7
5
1
11.0
40
5
2
14.5
15.1
3
14.9
15.5
1
15.3
15.9
5
1
12.0
45
5
2
15.7
16.5
3
16.3
17.1
1
16.9
17.7
5
1
13.0
55
5
2
17.5
18.3
3
18.1
19.0
1
18.8
19.7
2
1
15.0
60
2
2
19.5
20.4
3
20.2
21.1
1
20.9
21.9
2
1
17.0
65
2
2
21.6
22.6
3
22.3
23.3
1
22.9
24.0
2
1
19.0
70
2
2
23.6
24.7
3
24.3
25.5
1
25.2
26.6
2
1
21.0
80
2
2
26.2
27.6
3
27.2
28.6
1
28.2
29.6
2
1
23.0
100
2
2
29.2
30.6
3
30.2
31.6
1
31.2
32.6
2
1
25.0
120
2
2
32.2
33.6
3
33.2
34.6
1
34.2
35.7
2
1
27.0
140
2
2
35.3
36.8
3
36.4
38.0
HZ16
HZ18
HZ20
HZ22
HZ24
HZ27
HZ30
HZ33
HZ36
Note:
Note:
1. Tested with DC.
2. Type No. is as follows; HZ2B1, HZ2B2, HZ36-3.
Rev.2, Nov. 1999, page 5 of 8
HZ Series
Main Characteristic
Zener Current I Z (A)
HZ36-2
HZ30-2
HZ24-2
HZ20-2
HZ16-2
HZ9B2
HZ2B2
HZ4B2
HZ6B2
10-3
HZ12B2
10-2
10-4
10-5
10-6
10-7
10-8
0
5
15
10
20
25
30
35
40
Zener Voltage V Z (V)
Fig.1 Zener current Vs. Zener voltage
0.08
40
0.06
30
0.04
20
mV/°C
10
0.02
0
0
-0.02
-10
-0.04
-20
-0.06
-30
-0.08
-40
-0.10
0
5
-50
10 15 20 25 30 35 40
Zener Voltage VZ (V)
Fig.2 Temperature Coefficient Vs. Zener voltage
Rev.2, Nov. 1999, page 6 of 8
5mm
2.5 mm
3 mm
400
Power Dissipation Pd (mW)
%/°C
Zener Voltage
Temperature Coefficient γ z (mV/°C)
Zener Voltage
Temperature Coefficient γ z (%/°C)
500
50
0.10
Printed circuit board
100 ×180 ×1.6t mm
Quality: paper phenol
300
200
100
0
0
50
100
150
Ambient Temperature Ta (°C)
200
Fig.3 Power Dissipation Vs. Ambient Temperature
HZ Series
Package Dimensions
Unit: mm
4.2 Max
26.0 Min
φ 0.5
φ 2.0
26.0 Min
Hitachi Code
JEDEC
EIAJ
Mass
DO-35
Conforms
Conforms
0.13 g
Rev.2, Nov. 1999, page 7 of 8
HZ Series
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585200
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straße 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.2, Nov. 1999, page 8 of 8
Similar pages