ETC HZM-NSERIES

HZM-N Series
Silicon Epitaxial Planar Zener Diode for Stabilizer
ADE-208-130D (Z)
Rev.4
Dec. 2002
Features
• Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application.
• MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HZM-N Series
Let to Mark Code
MPAK
Pin Arrangement
3
1
2
(Top View)
1. NC
2. Anode
3. Cathode
HZM-N Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
1
Value
Unit
200
mW
Power dissipation
Pd *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. See Fig. 3.
Electrical Characteristics
(Ta = 25°C)
Zener Voltage *
1
VZ (V)
Reverse Current
Dynamic Resistance
Test
Condition
IR (µ
µA)
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZM2.0N
B
1.90
2.20
5
120
0.5
100
5
HZM2.2N
B
2.10
2.40
5
120
0.7
100
5
HZM2.4N
B
2.30
2.60
5
120
1.0
100
5
HZM2.7N
B
2.50
2.90
5
120
1.0
110
5
B1
2.50
2.75
B2
2.65
2.90
B
2.80
3.20
5
50
1.0
120
5
B1
2.80
3.05
B2
2.95
3.20
B
3.10
3.50
5
20
1.0
130
5
B1
3.10
3.35
B2
3.25
3.50
B
3.40
3.80
5
10
1.0
130
5
B1
3.40
3.65
B2
3.55
3.80
B
3.70
4.10
5
10
1.0
130
5
B1
3.70
3.97
B2
3.87
4.10
HZM3.0N
HZM3.3N
HZM3.6N
HZM3.9N
Note:
1. Tested with pulse (PW = 40 ms)
Rev.4, Dec. 2002, page 2 of 10
HZM-N Series
Zener Voltage *
1
VZ (V)
Reverse Current
Dynamic Resistance
Test
Condition
IR (µ
µA)
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZM4.3N
B
4.01
4.48
5
10
1.0
130
5
B1
4.01
4.21
B2
4.15
4.34
B3
4.28
4.48
B
4.42
4.90
5
10
1.0
130
5
B1
4.42
4.61
B2
4.55
4.75
B3
4.69
4.90
B
4.84
5.37
5
5
1.5
130
5
B1
4.84
5.04
B2
4.98
5.20
B3
5.14
5.37
B
5.31
5.92
5
5
2.5
80
5
B1
5.31
5.55
B2
5.49
5.73
B3
5.67
5.92
B
5.86
6.53
5
2
3.0
50
5
B1
5.86
6.12
B2
6.06
6.33
B3
6.26
6.53
B
6.47
7.14
5
2
3.5
30
5
B1
6.47
6.73
B2
6.65
6.93
B3
6.86
7.14
B
7.06
7.84
5
2
4.0
30
5
B1
7.06
7.36
B2
7.28
7.60
B3
7.52
7.84
B
7.76
8.64
5
2
5.0
30
5
B1
7.76
8.10
B2
8.02
8.36
B3
8.28
8.64
HZM4.7N
HZM5.1N
HZM5.6N
HZM6.2N
HZM6.8N
HZM7.5N
HZM8.2N
Note:
1. Tested with pulse (PW = 40 ms)
Rev.4, Dec. 2002, page 3 of 10
HZM-N Series
Zener Voltage *
1
VZ (V)
Reverse Current
Dynamic Resistance
Test
Condition
IR (µ
µA)
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZM9.1N
B
8.56
9.55
5
2
6.0
30
5
B1
8.56
8.93
B2
8.85
9.23
B3
9.15
9.55
B
9.45
10.55
5
2
7.0
30
5
B1
9.45
9.87
B2
9.77
10.21
B3
10.11
10.55
B
10.44
11.56
5
2
8.0
30
5
B1
10.44
10.88
B2
10.76
11.22
B3
11.10
11.56
B
11.42
12.60
5
2
9.0
35
5
B1
11.42
11.90
B2
11.74
12.24
B3
12.08
12.60
B
12.47
13.96
5
2
10.0
35
5
B1
12.47
13.03
B2
12.91
13.49
B3
13.37
13.96
B
13.84
15.52
5
2
11.0
40
5
B1
13.84
14.46
B2
14.34
14.98
B3
14.85
15.52
B
15.37
17.09
5
2
12.0
40
5
B1
15.37
16.01
B2
15.85
16.51
B3
16.35
17.09
B
16.94
19.03
5
2
13.0
45
5
B1
16.94
17.70
B2
17.56
18.35
B3
18.21
19.03
HZM10N
HZM11N
HZM12N
HZM13N
HZM15N
HZM16N
HZM18N
Note:
1. Tested with pulse (PW = 40 ms)
Rev.4, Dec. 2002, page 4 of 10
HZM-N Series
Zener Voltage *
1
VZ (V)
Reverse Current
Dynamic Resistance
Test
Condition
IR (µ
µA)
Test
Condition
rd (Ω
Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZM20N
B
18.86
21.08
5
2
15.0
50
5
B1
18.86
19.70
B2
19.52
20.39
B3
20.21
21.08
B
20.88
23.17
5
2
17.0
55
5
B1
20.88
21.77
B2
21.54
22.47
B3
22.23
23.17
B
22.93
25.57
5
2
19.0
60
5
B1
22.93
23.96
B2
23.72
24.78
B3
24.54
25.57
HZM27N
B
25.10
28.90
2
2
21.0
70
2
HZM30N
B
28.00
32.00
2
2
23.0
80
2
HZM33N
B
31.00
35.00
2
2
25.0
80
2
HZM36N
B
34.00
38.00
2
2
27.0
90
2
HZM22N
HZM24N
Note:
1. Tested with pulse (PW = 40 ms)
Rev.4, Dec. 2002, page 5 of 10
HZM-N Series
Mark Code
Type
Grade
MARK No.
Type
Grade
MARK No.
Type
Grade
MARK No.
HZM2.0N
B
20–
HZM7.5N
B1
751
HZM20N
B1
201
HZM2.2N
B
22–
B2
752
B2
202
HZM2.4N
B
24–
B3
753
B3
203
HZM2.7N
B1
271
B1
821
B1
221
B2
272
B2
822
B2
222
B1
301
B2
302
B1
HZM3.0N
HZM3.3N
HZM3.6N
HZM3.9N
HZM4.3N
HZM4.7N
HZM5.1N
HZM5.6N
HZM6.2N
HZM6.8N
HZM8.2N
B3
823
B1
911
331
B2
B2
332
B1
361
B2
HZM22N
B3
223
B1
241
912
B2
242
B3
913
B3
243
B1
101
HZM27N
B
27–
362
B2
102
HZM30N
B
30–
B1
391
B3
103
HZM33N
B
33–
B2
392
B1
111
HZM36N
B
36–
B1
431
B2
112
B2
432
B3
433
B1
HZM9.1N
HZM10N
HZM11N
B3
113
B1
121
471
B2
122
B2
472
B3
123
B3
473
B1
131
B1
511
B2
132
B2
512
B3
133
B3
513
B1
151
HZM12N
HZM13N
HZM15N
B1
561
B2
152
B2
562
B3
153
B3
563
B1
161
B1
621
B2
162
B2
622
B3
163
B3
623
B1
181
B1
681
B2
182
B2
682
B3
183
B3
683
Rev.4, Dec. 2002, page 6 of 10
HZM16N
HZM18N
HZM24N
HZM-N Series
Example of Marking
1. One grade type (grade type B)
20 HZM2.0NB
30
- -
Underline
HZM30NB
2. Two grade type (B1, B2)
301
302
HZM3.0NB1
HZM3.0NB2
3. Three grade type (B1, B2, B3)
431
432
433
HZM4.3NB1
HZM4.3NB2
HZM4.3NB3
Notes: 1. The grade B type includes from B1 min. to B3 (or B2) max.
2. B grade is standard and has better delivery, These are marked one of B1, B2, B3.
Ordering P/N HZM-N series are delivered taped (TL/TR).
3.
Choose one taping code and adhere to parts No.
Example: HZM2.0NBTL (or TR), HZM2.2NBTL (or TR), HZM36NBTL (or TR).
(Grade B type)
HZM2.7NB1TL (or TR), HZM2.7NB2TL (or TR), HZM24NB3TL (or TR).
(Grade B1, B2, B3 type)
Rev.4, Dec. 2002, page 7 of 10
HZM-N Series
HZM16N
HZM13N
HZM2.4N
HZM3.0N
HZM3.6N
HZM4.3N
HZM5.1N
HZM6.2N
HZM7.5N
HZM8.2N
HZM9.1N
HZM10N
HZM11N
Main Characteristic
10
HZM36N
HZM33N
HZM30N
HZM27N
HZM22N
HZM24N
HZM20N
HZM18N
HZM15N
HZM12N
4
HZM6.8N
6
HZM2.0N
Zener Current IZ (mA)
8
2
0
0
4
8
12
16
24
20
28
32
36
40
Zener Voltage VZ (V)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
–0.01
–0.02
–0.03
–0.04
–0.05
–0.06
250
mV/°C
0
5 10 15 20 25 30 35 40 45
0.8mm
40
35
30
25
20
15
10
5
0
–5
–10
–15
–20
–25
Power Dissipation Pd (mW)
1.0mm
%/°C
Zener Voltage
Temperature Coefficient γZ (mV/°C)
Zener Voltage
Temperature Coefficient γZ (%/°C)
Fig.1 Zener current vs. Zener voltage
200
Cu Foil
Printed circuit board
25 × 62 × 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
150
100
50
0
0
50
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (°C)
Fig.2 Temperature Coefficient vs. Zener voltage
Fig.3 Power Dissipation vs. Ambient Temperature
Rev.4, Dec. 2002, page 8 of 10
HZM-N Series
Package Dimensions
As of July, 2002
2.8
+ 0.2
– 0.6
1.5 ± 0.15
0.3
2.8 +– 0.1
(0.65)
1.9 ± 0.2
0 – 0.1
(0.3)
(0.95) (0.95)
+ 0.10
0.16 – 0.06
+ 0.2
1.1 – 0.1
0.10
3–0.4 +– 0.05
(0.65)
Unit: mm
Hitachi Code
JEDEC
JEITA
Mass (reference value)
MPAK
—
Conforms
0.011 g
Rev.4, Dec. 2002, page 9 of 10
HZM-N Series
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Sales Offices
Hitachi, Ltd.
Semiconductor & Integrated Circuits
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
URL
http://www.hitachisemiconductor.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe Ltd.
Electronic Components Group
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00
Singapore 049318
Tel : <65>-6538-6533/6538-8577
Fax : <65>-6538-6933/6538-3877
URL : http://semiconductor.hitachi.com.sg
Hitachi Europe GmbH
Electronic Components Group
Dornacher Str 3
D-85622 Feldkirchen
Postfach 201, D-85619 Feldkirchen
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road
Hung-Kuo Building
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://semiconductor.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon Hong Kong
Tel : <852>-2735-9218
Fax : <852>-2730-0281
URL : http://semiconductor.hitachi.com.hk
Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.4, Dec. 2002, page 10 of 10