HITACHI HZM43FA

HZM4.3FA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-468(Z)
Rev 0
Features
• HZM4.3FA has four devices, and can absorb external + and -surge.
• MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HZM4.3FA
43A
MPAK-5
Outline
2
1
1 Cathode
2 Cathode
3 Cathode
5
4
3
(Top View)
4 Anode
5 Cathode
HZM4.3FA
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
*1
Value
Unit
200
mW
Power dissipation
Pd
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Four device total, With P.C board.
Electrical Characteristics (Ta = 25°C) *2
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
4.01
—
4.48
V
I Z = 5 mA, 40ms pulse
Reverse current
IR
—
—
10
µA
VR = 1V
Capacitance
C
—
—
150
pF
VR = 0V, f = 1 MHz
rd
—
—
130
Ω
I Z = 5 mA
—
30
—
—
kV
C =150pF, R = 330 Ω, Both forward and
reverse direction 10 pulse
Dynamic resistance
ESD-Capability
*1
Notes: 1. Failure criterion ; IR ≥ 10 µA at VR = 1V.
2. Per one device.
2
HZM4.3FA
Main Characteristic
10
1.0
Zener Current
Iz
(A)
-1
10
10 -2
10
-3
-4
10
-5
10
-6
10
-7
10
0
1
2
3
4
Zener Voltage
5
6
8
7
Vz (V)
Fig.1 Zener current Vs. Zener voltage
250
0.6mm
1.0mm
Power Dissipation Pd (mW)
200
Cu Foil
Printed circuit board
25 × 62 × 1.6t mm
Material:
Glass Epoxy Resin+Cu Foil
150
100
50
0
0
50
100
150
200
Ambient Temperature Ta ( °C)
Fig.2 Power Dissipation Vs. Ambient Temperature
3
HZM4.3FA
Main Characteristic
Nonrepetitive Surge Reverses Power PRSM (W)
4
10
PRSM
t
3
Ta = 25°C
nonrepetitive
10
2
10
10
1.0
-5
10
-4
10
-3
10
Time t
-2
10
-1
1.0
10
(s)
Fig.3 Surge Reverse Power Ratings
4
3
10
2
10
20hx15wx0.8t
2.4
0.4
2.7
10
3.0
Transient Thermal Impedance Z th (°C/W)
10
1.0
1.0 1.5 1.75
-2
10
-1
10
1.0
Time t
10
(s)
Fig.4 Transient Thermal Impedance
4
2
10
unit: mm
3
10
HZM4.3FA
Package Dimensions
Unit : mm
0.4±0.1
0.4±0.1
2
0.2
1.6 +– 0.1
0.16
Laser Mark
0 to 0.15
43A
4
0.4±0.1
1 Cathode
3
2 Cathode
0.4±0.1
3 Cathode
1.9
2.9±0.2
4 Anode
+ 0.2
5 Cathode
1.1 – 0.1
5
(0.6)
0.2
2.8 +– 0.3
1
(0.8)
(0.6)
(0.95) (0.95)
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
MPAK-5
—
—
0.013
5
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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