Renesas HZS39NB3 Silicon epitaxial planar zener diode for stabilized power supply Datasheet

HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-124)
Rev.1.00
Mar.11.2004
Features
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
• Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-N Series
Type No.
MHD
Pin Arrangement
7.5
B
2
1
2
Type No.
Cathode band
1. Cathode
2. Anode
Rev.1.00, Mar.11.2004, page 1 of 6
HZS-N Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Junction temperature
Pd
Tj
400
200
mW
°C
Storage temperature
Tstg
−55 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
1
VZ (V)*
Type
Grade
HZS2.0N
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
HZS2.2N
HZS2.4N
HZS2.7N
HZS3.0N
HZS3.3N
HZS3.6N
HZS3.9N
HZS4.3N
HZS4.7N
HZS5.1N
HZS5.6N
HZS6.2N
HZS6.8N
Note:
Min
1.88
2.02
2.12
2.22
2.33
2.43
2.54
2.69
2.85
3.01
3.16
3.32
3.47
3.62
3.77
3.92
4.05
4.20
4.34
4.47
4.59
4.71
4.85
4.97
5.12
5.29
5.46
5.64
5.81
5.99
6.16
6.32
6.52
6.70
Max
2.10
2.20
2.30
2.41
2.52
2.63
2.75
2.91
3.07
3.22
3.38
3.53
3.68
3.83
3.98
4.14
42.6
4.40
4.53
4.65
4.77
4.91
5.03
5.18
5.35
5.52
5.70
5.88
6.06
6.24
6.40
6.59
6.79
6.97
1. Tested with pulse (PW = 40 ms)
Rev.1.00, Mar.11.2004, page 2 of 6
Test
Condition
Reverse Current
Test
IR (µA)
Condition
Dynamic Resistance
Test
rd (Ω)
Condition
IZ (mA)
5
Max
120
VR (V)
0.5
Max
100
IZ (mA)
5
5
120
0.7
100
5
5
120
1.0
100
5
5
100
1.0
110
5
5
50
1.0
120
5
5
20
1.0
120
5
5
10
1.0
120
5
5
5
1.0
120
5
5
5
1.0
120
5
5
5
1.0
100
5
5
5
1.5
70
5
5
5
2.5
40
5
5
5
3.0
30
5
5
2
3.5
25
5
HZS-N Series
(Ta = 25°C)
Zener Voltage
1
VZ (V)*
Type
Grade
HZS7.5N
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B1
B2
B3
B4
B1
B2
B3
B4
B1
B2
B3
B4
HZS8.2N
HZS9.1N
HZS10N
HZS11N
HZS12N
HZS13N
HZS15N
HZS16N
HZS18N
HZS20N
HZS22N
HZS24N
HZS27N
Note:
Min
6.88
7.11
7.33
7.56
7.82
8.07
8.33
8.61
8.89
9.19
9.48
9.82
10.18
10.50
10.82
11.13
11.50
11.80
12.18
12.59
13.03
13.48
13.95
14.42
14.87
15.33
15.79
16.34
16.90
17.51
18.14
18.80
19.52
20.23
20.76
21.22
21.68
22.26
22.75
23.29
23.81
24.26
24.97
25.63
26.29
Max
7.19
7.41
7.64
7.90
8.15
8.41
8.70
8.99
9.29
9.59
9.90
10.30
10.63
10.95
11.26
11.63
11.92
12.30
12.71
13.16
13.62
14.09
14.56
15.02
15.50
15.96
16.50
17.06
17.67
18.30
18.96
19.68
20.45
21.08
21.65
22.09
22.61
23.12
23.73
24.27
24.81
25.52
26.26
26.95
27.64
1. Tested with pulse (PW = 40 ms)
Rev.1.00, Mar.11.2004, page 3 of 6
Test
Condition
Reverse Current
Test
IR (µA)
Condition
Dynamic Resistance
Test
rd (Ω)
Condition
IZ (mA)
5
Max
0.5
VR (V)
4.0
Max
25
IZ (mA)
5
5
0.5
5.0
20
5
5
0.5
6.0
20
5
5
0.2
7.0
20
5
5
0.2
8.0
20
5
5
0.2
9.0
25
5
5
0.2
10
25
5
5
0.2
11
25
5
5
0.2
12
25
5
5
0.2
13
30
5
5
0.2
15
30
5
5
0.2
17
30
5
5
0.2
19
35
5
5
0.2
21
45
5
HZS-N Series
(Ta = 25°C)
Zener Voltage
1
VZ (V)*
Reverse Current
Dynamic Resistance
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZS30N
B1
26.99
28.39
5
0.2
23
55
5
B2
B3
27.70
28.36
29.13
29.82
B4
B1
29.02
29.68
30.51
31.22
5
0.2
25
65
5
B2
B3
30.32
30.90
31.88
32.50
B4
B1
31.49
32.14
33.11
33.79
5
0.2
27
75
5
B2
B3
32.79
33.40
34.49
35.13
B4
B1
34.01
34.68
35.77
36.47
5
0.2
30
85
5
B2
B3
35.36
36.00
37.19
37.85
B4
36.63
38.52
HZS33N
HZS36N
HZS39N
Notes: 1. Tested with pulse (PW = 40 ms).
2. Type No. is as follows: HZS2.0NB1, HZS2.0NB2, ••• HZS39NB4.
Rev.1.00, Mar.11.2004, page 4 of 6
HZS-N Series
HZS16N
HZS2.4N
HZS3.0N
HZS3.6N
HZS4.3N
HZS5.1N
HZS6.2N
HZS7.5N
HZS8.2N
HZS9.1N
HZS10N
HZS11N
HZS12N
Main Characteristic
HZS39N
HZS36N
HZS33N
HZS30N
HZS27N
HZS24N
HZS22N
HZS18N
HZS6.8N
6
HZS13N
HZS15N
HZS2.0N
Zener Current IZ (mA)
8
HZS20N
10
4
2
0
0
4
8
12
16
20
24
28
32
36
40
Zener Voltage VZ (V)
50
%/°C
0.08
40
0.06
30
0.04
20
mV/°C
0.02
10
0
0
−0.02
−10
−0.04
−20
−0.06
−30
−0.08
−40
−0.10
0
5
−50
10 15 20 25 30 35 40
500
l
2.5 mm
Power Dissipation Pd (mW)
0.10
Zener Voltage Temperature Coefficient γZ (mV/°C)
Zener Voltage Temperature Coefficient γZ (%/°C)
Fig.1 Zener current vs. Zener voltage
3 mm
400
Printed circuit board
100 × 180 × 1.6t mm
Material: paper phenol
300
l = 5 mm
200
l = 10 mm
(Publication value)
100
0
0
50
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (°C)
Fig.2 Temperature Coefficient vs. Zener voltage
Fig.3 Power Dissipation vs. Ambient Temperature
Rev.1.00, Mar.11.2004, page 5 of 6
HZS-N Series
Package Dimensions
As of January, 2003
Unit: mm
2.4 Max
26.0 Min
φ 0.4
φ 2.0
26.0 Min
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.1.00, Mar.11.2004, page 6 of 6
MHD
Conforms
—
0.084 g
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