Renesas HZS6L1 Silicon epitaxial planar zener diode for low noise application Datasheet

HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-L Series
Type No.
MHD
Pin Arrangement
7
B
1
2
2
Type No.
Cathode band
1. Cathode
2. Anode
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Reverse Current
Dynamic Resistance
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*
1
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZS6L
A1
5.2
5.5
0.5
1
2.0
150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
A1
6.3
6.6
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
HZS7L
Note:
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 2 of 6
0.5
1
3.5
HZS-L Series
Zener Voltage
VZ (V)*
Type
Grade
HZS9L
HZS11L
HZS12L
HZS15L
HZS16L
Note:
Min
Reverse Current
Dynamic Resistance
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
0.5
1
6.0
60
0.5
0.5
1
8.0
80
0.5
0.5
1
10.5
80
0.5
0.5
1
13.0
80
0.5
0.5
1
14.0
80
0.5
1
A1
7.7
8.1
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
A1
9.5
9.9
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
C1
10.9
11.3
C2
11.1
11.6
C3
11.4
11.9
A1
11.6
12.1
A2
11.9
12.4
A3
12.2
12.7
B1
12.4
12.9
B2
12.6
13.1
B3
12.9
13.4
C1
13.2
13.7
C2
13.5
14.0
C3
13.8
14.3
1
14.1
14.7
2
14.5
15.1
3
14.9
15.5
1
15.3
15.9
2
15.7
16.5
3
16.3
17.1
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 3 of 6
HZS-L Series
Zener Voltage
VZ (V)*
Type
HZS18L
HZS20L
HZS22L
HZS24L
HZS27L
HZS30L
HZS33L
HZS36L
Grade
Min
Reverse Current
Dynamic Resistance
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
0.5
1
15.0
80
0.5
0.5
1
18.0
100
0.5
0.5
1
20.0
100
0.5
0.5
1
22.0
120
0.5
0.5
1
24.0
150
0.5
0.5
1
27.0
200
0.5
0.5
1
30.0
250
0.5
0.5
1
33.0
300
0.5
1
1
16.9
17.7
2
17.5
18.3
3
18.1
19.0
1
18.8
19.7
2
19.5
20.4
3
20.2
21.1
1
20.9
21.9
2
21.6
22.6
3
22.3
23.3
1
22.9
24.0
2
23.6
24.7
3
24.3
25.5
1
25.2
26.6
2
26.2
27.6
3
27.2
28.6
1
28.2
29.6
2
29.2
30.6
3
30.2
31.6
1
31.2
32.6
2
32.2
33.6
3
33.2
34.6
1
34.2
35.7
2
35.3
36.8
3
36.4
38.0
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L
Rev.2.00, Jan.06.2003, page 4 of 6
HZS-L Series
Main Characteristic
10–4
HZS36-2L
HZS30-2L
HZS24-2L
HZS20-2L
HZS16-2L
HZS12B2L
Zener Current IZ (A)
10–3
HZS9B2L
HZS6B2L
10–2
10–5
10–6
10–7
10–8
0
5
10
15
20
25
30
35
40
Zener Voltage VZ (V)
50
%/°C
0.08
40
0.06
30
0.04
20
mV/°C
0.02
10
0
0
−0.02
−10
−0.04
−20
−0.06
−30
−0.08
−40
−0.10
0
5
−50
10 15 20 25 30 35 40
500
l
2.5 mm
Power Dissipation Pd (mW)
0.10
Zener Voltage Temperature Coefficient γZ (mV/°C)
Zener Voltage Temperature Coefficient γZ (%/°C)
Fig.1 Zener current vs. Zener voltage
3 mm
400
Printed circuit board
100 × 180 × 1.6t mm
Quality: paper phenol
300
l = 5 mm
200
l = 10 mm
(Publication value)
100
0
0
50
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (°C)
Fig.2 Temperature Coefficient vs. Zener voltage
Fig.3 Power Dissipation vs. Ambient Temperature
Rev.2.00, Jan.06.2003, page 5 of 6
HZS-L Series
Package Dimensions
As of January, 2003
Unit: mm
2.4 Max
26.0 Min
φ 0.4
φ 2.0
26.0 Min
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Jan.06.2003, page 6 of 6
MHD
Conforms
—
0.084 g
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
http://www.renesas.com
RENESAS SALES OFFICES
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501
Renesas Technology Europe Limited.
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom
Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900
Renesas Technology Europe GmbH
Dornacher Str. 3, D-85622 Feldkirchen, Germany
Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11
Renesas Technology Hong Kong Ltd.
7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2375-6836
Renesas Technology Taiwan Co., Ltd.
FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon 1.0
Similar pages