Renesas HZS9L3 Silicon epitaxial planar zener diode for low noise application Datasheet

HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
• Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
Mark
Package Code
HZS-L Series
Type No.
MHD
Pin Arrangement
7
B
1
2
2
Type No.
Cathode band
1. Cathode
2. Anode
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Power dissipation
Pd
400
mW
Junction temperature
Tj
200
°C
Storage temperature
Tstg
–55 to +175
°C
Reverse Current
Dynamic Resistance
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
VZ (V)*
1
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Type
Grade
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
HZS6L
A1
5.2
5.5
0.5
1
2.0
150
0.5
A2
5.3
5.6
A3
5.4
5.7
B1
5.5
5.8
80
0.5
B2
5.6
5.9
B3
5.7
6.0
C1
5.8
6.1
60
0.5
C2
6.0
6.3
C3
6.1
6.4
A1
6.3
6.6
60
0.5
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
B2
6.9
7.2
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
HZS7L
Note:
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 2 of 6
0.5
1
3.5
HZS-L Series
Zener Voltage
VZ (V)*
Type
Grade
HZS9L
HZS11L
HZS12L
HZS15L
HZS16L
Note:
Min
Reverse Current
Dynamic Resistance
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
0.5
1
6.0
60
0.5
0.5
1
8.0
80
0.5
0.5
1
10.5
80
0.5
0.5
1
13.0
80
0.5
0.5
1
14.0
80
0.5
1
A1
7.7
8.1
A2
7.9
8.3
A3
8.1
8.5
B1
8.3
8.7
B2
8.5
8.9
B3
8.7
9.1
C1
8.9
9.3
C2
9.1
9.5
C3
9.3
9.7
A1
9.5
9.9
A2
9.7
10.1
A3
9.9
10.3
B1
10.2
10.6
B2
10.4
10.8
B3
10.7
11.1
C1
10.9
11.3
C2
11.1
11.6
C3
11.4
11.9
A1
11.6
12.1
A2
11.9
12.4
A3
12.2
12.7
B1
12.4
12.9
B2
12.6
13.1
B3
12.9
13.4
C1
13.2
13.7
C2
13.5
14.0
C3
13.8
14.3
1
14.1
14.7
2
14.5
15.1
3
14.9
15.5
1
15.3
15.9
2
15.7
16.5
3
16.3
17.1
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 3 of 6
HZS-L Series
Zener Voltage
VZ (V)*
Type
HZS18L
HZS20L
HZS22L
HZS24L
HZS27L
HZS30L
HZS33L
HZS36L
Grade
Min
Reverse Current
Dynamic Resistance
Test
Condition
IR (µA)
Test
Condition
rd (Ω)
Test
Condition
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
0.5
1
15.0
80
0.5
0.5
1
18.0
100
0.5
0.5
1
20.0
100
0.5
0.5
1
22.0
120
0.5
0.5
1
24.0
150
0.5
0.5
1
27.0
200
0.5
0.5
1
30.0
250
0.5
0.5
1
33.0
300
0.5
1
1
16.9
17.7
2
17.5
18.3
3
18.1
19.0
1
18.8
19.7
2
19.5
20.4
3
20.2
21.1
1
20.9
21.9
2
21.6
22.6
3
22.3
23.3
1
22.9
24.0
2
23.6
24.7
3
24.3
25.5
1
25.2
26.6
2
26.2
27.6
3
27.2
28.6
1
28.2
29.6
2
29.2
30.6
3
30.2
31.6
1
31.2
32.6
2
32.2
33.6
3
33.2
34.6
1
34.2
35.7
2
35.3
36.8
3
36.4
38.0
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L
Rev.2.00, Jan.06.2003, page 4 of 6
HZS-L Series
Main Characteristic
10–4
HZS36-2L
HZS30-2L
HZS24-2L
HZS20-2L
HZS16-2L
HZS12B2L
Zener Current IZ (A)
10–3
HZS9B2L
HZS6B2L
10–2
10–5
10–6
10–7
10–8
0
5
10
15
20
25
30
35
40
Zener Voltage VZ (V)
50
%/°C
0.08
40
0.06
30
0.04
20
mV/°C
0.02
10
0
0
−0.02
−10
−0.04
−20
−0.06
−30
−0.08
−40
−0.10
0
5
−50
10 15 20 25 30 35 40
500
l
2.5 mm
Power Dissipation Pd (mW)
0.10
Zener Voltage Temperature Coefficient γZ (mV/°C)
Zener Voltage Temperature Coefficient γZ (%/°C)
Fig.1 Zener current vs. Zener voltage
3 mm
400
Printed circuit board
100 × 180 × 1.6t mm
Quality: paper phenol
300
l = 5 mm
200
l = 10 mm
(Publication value)
100
0
0
50
100
150
200
Zener Voltage VZ (V)
Ambient Temperature Ta (°C)
Fig.2 Temperature Coefficient vs. Zener voltage
Fig.3 Power Dissipation vs. Ambient Temperature
Rev.2.00, Jan.06.2003, page 5 of 6
HZS-L Series
Package Dimensions
As of January, 2003
Unit: mm
2.4 Max
26.0 Min
φ 0.4
φ 2.0
26.0 Min
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Jan.06.2003, page 6 of 6
MHD
Conforms
—
0.084 g
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