ICSI IC41UV4105-70J 1mx4 bit dynamic ram with fast page mode Datasheet

IC41UV4105
Document Title
1Mx4 bit Dynamic RAM with Fast Page Mode
Revision History
Revision No
History
Draft Date
Remark
0A
0B
Initial Draft
1.Change for VCC 2.6±0.3 to 2.6±0.2V
August 9,2001
August 24,2001
Preliminary
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
1
IC41UV4105
1M x 4 (4−MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
DESCRIPTION
• Fast Page Mode Access Cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 1,024 cycles/16 ms
• Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply:
2.6V ± 0.2V
The ICSI 4105 Series is a 1,048,576 x 4-bit high-performance
CMOS Dynamic Random Access Memory. The Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 4-bit word.
These features make the 4105 Series ideally suited for highbandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The 4105 Series is packaged in a 20-pin 300mil SOJ and a 20
pin TSOP-2
KEY TIMING PARAMETERS
PIN CONFIGURATION
20 (26) Pin SOJ, TSOP-2
Parameter
-50
-70 -100 Unit
RAS Access Time (tRAC)
50
70
100
ns
CAS Access Time (tCAC)
14
20
25
ns
Column Address Access Time (tAA)
25
35
50
ns
Fast Page Mode Cycle Time (tPC)
20
45
60
ns
Read/Write Cycle Time (tRC)
90
130
180
ns
PIN DESCRIPTIONS
I/O0
1
26
GND
A0-A9
Address Inputs
I/O1
2
25
I/O3
I/O0-3
Data Inputs/Outputs
WE
3
24
I/O2
WE
Write Enable
RAS
4
23
CAS
A9
5
22
OE
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
A0
9
18
A8
A1
10
17
A7
A2
11
16
A6
A3
12
15
A5
VCC
13
14
A4
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
DR020-0A 08/09/2001
2
IC41UV4105
FUNCTIONAL BLOCK DIAGRAM
OE
WE
CAS
CONTROL
LOGIC
CAS
WE
CONTROL
LOGICS
CAS
OE
CONTROL
LOGIC
WE
OE
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
ROW DECODER
REFRESH
COUNTER
ADDRESS
BUFFERS
A0-A9
MEMORY ARRAY
1,048,576 x 4
DATA I/O BUFFERS
RAS
CLOCK
GENERATOR
RAS
RAS
I/O0-I/O3
TRUTH TABLE
Function
Standby
Read
Write: Word (Early Write)
Read-Write
Hidden Refresh
Read
Write(1)
RAS-Only Refresh
CBR Refresh
RAS
H
L
L
L
L→H→L
L→H→L
L
H→L
CAS
H
L
L
L
L
L
H
L
WE
X
H
L
H→L
H
L
X
X
OE
X
L
X
L→H
L
X
X
X
Address tR/tC
X
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
DOUT
DIN
DOUT, DIN
DOUT
DOUT
High-Z
High-Z
Note:
1. EARLY WRITE only.
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
3
IC41UV4105
Functional Description
Refresh Cycle
The IC41UV4105 are CMOS DRAMs optimized for highspeed bandwidth, low power applications. During READ
or WRITE cycles, each bit is uniquely addressed through
the 10 address bits. These are entered 10 bits (A0-A9) at
a time. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS). RAS is used to latch the
first ten bits and CAS is used the latter ten bits.
To retain data, 1,024 refresh cycles are required in each
16 ms period . There are two ways to refresh the memory:
1. By clocking each of the 1,024 row addresses (A0
through A9) with RAS at least once every 16 ms . Any
read, write, read-modify-write or RAS-only cycle refreshes the addressed row.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time specified
by tAR. Data Out becomes valid only when tRAC, tAA, tCAC
and tOE are all satisfied. As a result, the access time is
dependent on the timing relationships between these
parameters.
2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 10-bit counter provides the row addresses and the external address inputs are ignored.
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the VCC supply, an initial pause of
200 µs is required followed by a minimum of eight initialization cycles (any combination of cycles containing a
RAS signal).
During power-on, it is recommended that RAS track with
VCC or be held at a valid VIH to avoid current surges.
Write Cycle
A write cycle is initiated by the falling edge of CAS and WE,
whichever occurs last. The input data must be valid at or
before the falling edge of CAS or WE, whichever occurs
last.
4
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
−0.5 to +3.4
V
VCC
Supply Voltage
−0.5 to +3.4
V
IOUT
PD
TA
TSTG
Output Current
Power Dissipation
Commercial Operation Temperature
Storage Temperature
50
1
0 to +70
−55 to +125
mA
W
o
C
o
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
2.4
2.6
2.8
V
VIH
Input High Voltage
1.8
−
VCC + 0.3
V
VIL
Input Low Voltage
−0.3
−
0.6
V
TA
Commercial Ambient Temperature
0
−
70
o
C
CAPACITANCE(1,2)
Symbol
Parameter
CIN1
CIN2
CIO
Input Capacitance: A0-A9
Input Capacitance: RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O3
Max.
Unit
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz.
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
5
IC41UV4105
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
IIL
Input Leakage Current
IIO
Speed
Min.
Max.
Unit
Any input 0V ≤ VIN ≤ Vcc
Other inputs not under test = 0V
−5
5
µA
Output Leakage Current
Output is disabled (Hi-Z)
0V ≤ VOUT ≤ Vcc
−5
5
µA
VOH
Output High Voltage Level
IOH = −2.0 mA
2.0
−
V
VOL
Output Low Voltage Level
IOL = 2 mA
−
0.8
V
ICC1
Standby Current: TTL
RAS, CAS ≥ VIH
−
1
mA
ICC2
Standby Current: CMOS
RAS, CAS ≥ VCC − 0.2V
0.5
mA
ICC3
Operating Current:
Random Read/Write(2,3,4)
Average Power Supply Current
RAS, CAS,
Address Cycling, tRC = tRC (min.)
-50
-70
-100
−
−
−
75
65
55
mA
ICC4
Operating Current:
Fast Page Mode(2,3,4)
Average Power Supply Current
RAS = VIL, CAS ≥ VIH
tRC = tRC (min.)
-50
-70
-100
−
−
−
60
50
40
mA
ICC5
Refresh Current:
RAS-Only(2,3)
Average Power Supply Current
RAS Cycling, CAS ≥ VIH
tRC = tRC (min.)
-50
-70
-100
−
−
−
75
65
55
mA
ICC6
Refresh Current:
CBR(2,3,5)
Average Power Supply Current
RAS, CAS Cycling
tRC = tRC (min.)
-50
-70
-100
−
−
−
75
65
55
mA
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each Fast page cycle.
5. Enables on-chip refresh and address counters.
6
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
Symbol
Parameter
tRC
tRAC
tCAC
tAA
tRAS
tRP
tCAS
tCP
tCSH
tRCD
tASR
tRAH
tASC
tCAH
tAR
Random READ or WRITE Cycle Time
Access Time from RAS(6, 7)
Access Time from CAS(6, 8, 15)
Access Time from Column-Address(6)
RAS Pulse Width
RAS Precharge Time
CAS Pulse Width(23)
CAS Precharge Time(9)
CAS Hold Time (21)
RAS to CAS Delay Time(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time(20)
Column-Address Hold Time(20)
Column-Address Hold Time
(referenced to RAS)
RAS to Column-Address Delay Time(11)
Column-Address to RAS Lead Time
RAS to CAS Precharge Time
RAS Hold Time
CAS to Output in Low-Z(15, 24)
CAS to RAS Precharge Time(21)
Output Disable Time(19, 24)
Output Enable Time(15, 16)
OE LOW to CAS HIGH Setup Time
Read Command Setup Time(17, 20)
Read Command Hold Time
(referenced to RAS)(12)
Read Command Hold Time
(referenced to CAS)(12, 17, 21)
Write Command Hold Time(17)
Write Command Hold Time
(referenced to RAS)(17)
Write Command Pulse Width(17)
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
Write Command Setup Time(14, 17, 20)
Data-in Hold Time (referenced to RAS)
tRAD
tRAL
tRPC
tRSH
tCLZ
tCRP
tOD
tOE
tOES
tRCS
tRRH
tRCH
tWCH
tWCR
tWP
tRWL
tCWL
tWCS
tDHR
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
Min.
Max.
-70
Min. Max.
-100
Min.
Max. Units
90
−
−
−
50
30
8
8
50
19
0
8
0
8
40
−
50
14
25
10K
−
10K
−
−
36
−
−
−
−
−
130
−
−
−
70
50
20
10
70
20
0
10
0
15
70
−
70
20
35
10K
−
10K
−
−
50
−
−
−
−
−
180
−
−
−
100
70
25
10
100
25
0
15
0
20
100
−
100
25
50
10K
−
10K
−
−
75
−
−
−
−
−
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
14
25
0
14
3
5
3
−
5
0
0
25
−
−
−
−
−
15
15
−
−
−
15
35
5
20
3
5
3
5
0
0
35
−
−
−
−
−
20
20
−
−
−
20
50
5
25
3
5
3
5
0
0
50
−
−
−
−
−
25
25
−
−
−
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
−
0
−
0
−
ns
8
40
−
−
10
70
−
−
15
100
−
−
ns
ns
8
14
14
0
40
−
−
−
−
−
10
20
20
0
50
−
−
−
−
−
15
25
25
0
60
−
−
−
−
−
ns
ns
ns
ns
ns
7
IC41UV4105
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
tACH
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
Data-In Setup Time(15, 22)
Data-In Hold Time(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
Fast Page Mode READ or WRITE
Cycle Time
Fast Page Mode RAS Pulse Width
Access Time from CAS Precharge(15)
Fast Page Mode READ WRITE
Cycle Time
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 24)
CAS Setup Time (CBR REFRESH)(20, 25)
CAS Hold Time (CBR REFRESH)( 21, 25)
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
Auto Refresh Period 1,024 Cycles
Transition Time (Rise or Fall)(2, 3)
tOEH
tDS
tDH
tRWC
tRWD
tCWD
tAWD
tPC
tRASP
tCPA
tPRWC
tOFF
tCSR
tCHR
tORD
tREF
tT
Min.
-50
Max.
-70
Min. Max.
-100
Min. Max.
Units
15
−
15
−
15
−
ns
10
−
20
−
25
−
ns
0
8
125
70
−
−
−
−
0
15
185
100
−
−
−
−
0
20
240
130
−
−
−
−
ns
ns
ns
ns
34
42
20
−
−
−
45
60
45
−
−
−
55
85
60
−
−
−
ns
ns
ns
50
47
100K
27
−
70
100
100K
40
−
100
120
100K
55
−
ns
ns
ns
3
15
3
15
3
15
ns
5
10
0
−
−
−
5
10
0
−
−
−
5
10
0
−
−
−
ns
ns
ns
−
3
16
50
−
3
16
50
−
3
16
50
ms
ns
AC TEST CONDITIONS
Output load:
One TTL Load and 100 pF
Input timing reference levels:
VIH = 1.8V, VIL = 0.6V
Output timing reference levels: VOH = 1.6V, VOL = 0.6V
8
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH
and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH)
in a monotonic manner.
4. If CAS and RAS = VIH, data output is High-Z.
5. If CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 100 pF.
7. Assumes that tRCD ≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase
by the amount that tRCD exceeds the value shown.
8. Assumes that tRCD ≥ tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the
data output buffer, CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD
is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD
is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS ≥ tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD ≥ tRWD
(MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back
to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a
LATE WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW
and OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. Determined by falling edge of CAS.
21. Determined by rising edge of CAS.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles.
23. CAS must meet minimum pulse width.
24. The 3 ns minimum is a parameter guaranteed by design.
25. Enables on-chip refresh and address counters.
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
9
IC41UV4105
READ CYCLE
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS
tRCD
tRRH
CAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tASC
Row
Column
Row
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLZ
I/O
tOFF(1)
Open
Open
Valid Data
tOE
tOD
OE
tOES
Don’t Care
Note:
1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
10
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
tRWC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS
tRCD
CAS
tAR
tRAD
tASR
tRAH
tRAL
tCAH
tASC
tACH
ADDRESS
Row
Column
Row
tRWD
tCWL
tRWL
tCWD
tRCS
tAWD
tWP
WE
tAA
tRAC
tCAC
tCLZ
I/O
tDS
Open
Valid DOUT
tOE
tOD
tDH
Valid DIN
Open
tOEH
OE
Don’t Care
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
11
IC41UV4105
EARLY WRITE CYCLE (OE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS
tRCD
CAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tACH
tASC
Row
Column
Row
tCWL
tRWL
tWCR
tWCS
tWCH
tWP
WE
tDHR
tDS
I/O
tDH
Valid Data
Don’t Care
12
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
FAST PAGE MODE READ CYCLE
tRASP
tRP
RAS
tPC
tCSH
tCAS
tCRP
tRSH
tCAS
tCAS
tRCD
tCP
tCRP
tCP
CAS
tAR
tRAL
tRAH
tRAD
tASC
tASR
ADDRESS
Row
tCAH
tASC
tAR
Column
tCAH
Column
tCAH
tASC
Column
tRCS
WE
tCPA
tCPA
tAA
tAA
tCAC
tAA
tCAC
tOE
tCAC
tOE
tOE
OE
tRAC
tOD
tCLZ
I/O
tOD
tCLZ
OUT
tOD
tCLZ
OUT
OUT
Don’t Care
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
13
IC41UV4105
FAST PAGE MODE EARLY WRITE CYCLE
tRASP
tRP
RAS
tPC
tCAS
tCSH
tCAS
tCRP
tRCD
tRSH
tCAS
tCP
tCRP
tCP
CAS
tAR
tRAL
tRAH
tRAD
tASC
tASR
ADDRESS
Row
tCAH
tCAH
tAR
Column
tASC
Column
Column
tCWL
tWCS
tWCH
tCAH
tASC
tCWL
tWCS
tWP
tRWL
tWCH tWCS
tWP
tWCH
tWP
WE
tWCR
OE
tDHR
tDS
I/O
tDH
Valid DIN
tDS
tDH
Valid DIN
tDS
tDH
Valid DIN
Don’t Care
14
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
FAST PAGE MODE READ WRITE CYCLE (LATE WRITE AND READ-MODIFY-WRITE CYCLE)
tRASP
tRP
RAS
tPRWC
tCAS
tCSH
tCAS
tCRP
tRCD
tRSH
tCAS
tCP
tCRP
tCP
CAS
tAR
tRAL
tRAD
tRAH
tASC
tASR
ADDRESS
Row
tCAH
tASC
tAR
Column
tCAH
tASC
Column
tCWL
tRWD
tAWD
tCWD
tRCS
tCAH
Column
tCWL
tRWL
tCWL
tAWD
tCWD
tWP
tAWD
tCWD
tWP
tWP
WE
tAA
tAA
tCAC
tAA
tCAC
tCAC
tOE
tOE
tOE
OE
tOD
tOD
tOD
tRAC
I/O
tDH
tDH
tDS tCLZ
tCLZ
OUT
tDS
IN
OUT
tDH
tCLZ
tDS
OUT
IN
IN
Don’t Care
RAS
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCRP
tRPC
CAS
tASR
ADDRESS
I/O
tRAH
Row
Row
Open
Don’t Care
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
15
IC41UV4105
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
tRP
tRAS
tRP
tRAS
RAS
tRPC
tCP
tCHR
tCHR
tRPC
tCSR
tCSR
CAS
Open
I/O
Don’t Care
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
tRAS
tRAS
tRP
RAS
tCRP
tRCD
tRSH
tCHR
CAS
tAR
tRAD
tRAH tASC
tASR
ADDRESS
Row
tRAL
tCAH
Column
tAA
tRAC
tOFF(2)
tCAC
tCLZ
I/O
Open
Valid Data
tOE
Open
tOD
tORD
OE
Don’t Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
16
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
IC41UV4105
ORDERING INFORMATION
Commercial Range: 0°°C to 70°°C
Voltage: 2.6V
Speed (ns)
50
50
70
70
100
100
Order Part No.
IC41UV4105-50J
IC41UV4105-50T
IC41UV4105-70J
IC41UV4105-70T
IC41UV4105-100J
IC41UV4105-100T
Package
300mil SOJ
300mil TSOP-2
300mil SOJ
300mil TSOP-2
300mil SOJ
300mil TSOP-2
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
Integrated Circuit Solution Inc.
DR020-0B 08/24/2001
17
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