Infineon IDP09E60 Fast switching emcon diode Datasheet

IDP09E60
IDB09E60
Fast Switching EmCon Diode
Product Summary
Feature
VRRM
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
600
V
IF
9
A
VF
1.5
V
T jmax
175
°C
P-TO220-3.SMD
• Low forward voltage
P-TO220-2-2.
• 175°C operating temperature
• Easy paralleling
Type
Package
Ordering Code
Marking
Pin 1
PIN 2
PIN 3
IDP09E60
P-TO220-2-2.
Q67040-S4483
D09E60
C
A
-
IDB09E60
P-TO220-3.SMD Q67040-S4482
D09E60
NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continous forward current
IF
Value
600
V
A
TC=25°C
19.3
TC=90°C
13
Surge non repetitive forward current
Unit
I FSM
40
I FRM
29.5
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
W
Ptot
TC=25°C
57.7
TC=90°C
32.7
Operating and storage temperature
Soldering temperature
Tj , Tstg
TS
1.6mm(0.063 in.) from case for 10s
Rev.2
Page 1
-55...+175
255
°C
°C
2003-07-31
IDP09E60
IDB09E60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
2.6
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 1)
-
35
-
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Reverse leakage current
IR
µA
V R=600V, Tj=25°C
-
-
50
V R=600V, Tj=150°C
-
-
750
Forward voltage drop
VF
V
IF=9A, Tj=25°C
-
1.5
2
IF=9A, Tj=150°C
-
1.5
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2
Page 2
2003-07-31
IDP09E60
IDB09E60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Reverse recovery time
ns
t rr
V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C
-
75
-
V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C
-
110
-
V R=400V, IF=9A, di F/dt=800A/µs, Tj=150°C
-
112
-
Peak reverse current
A
I rrm
V R=400V, IF = 9A, diF/dt=800A/µs, Tj=25°C
-
10.2
-
V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C
-
11.8
-
V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C
-
12.3
-
Reverse recovery charge
nC
Q rr
V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C
-
343
-
V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C
-
585
-
V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C
-
612
-
V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C
-
4
-
V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C
-
5.5
-
V R=400V, IF=9A, di F/dt=800A/µs, Tj=150°C
-
5.7
-
Reverse recovery softness factor
Rev.2
S
Page 3
2003-07-31
IDP09E60
IDB09E60
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f(TC)
parameter: Tj ≤ 175 °C
parameter: Tj≤ 175°C
20
60
W
A
50
16
14
40
IF
P tot
45
35
12
30
10
25
8
20
6
15
4
10
2
5
0
25
50
75
100
125
0
25
175
°C
50
75
100
125
TC
175
°C
TC
3 Typ. diode forward current
4 Typ. diode forward voltage
IF = f (VF)
VF = f (Tj)
2
27
18A
A
-55°C
25°C
100°C
150°C
21
V
IF
VF
18
1.6
15
9A
12
1.4
9
4,5A
6
1.2
3
0
0
0.5
1
1.5
2.5
V
VF
Rev.2
Page 4
1
-60
-20
20
60
100
160
°C
Tj
2003-07-31
IDP09E60
IDB09E60
5 Typ. reverse recovery time
6 Typ. reverse recovery charge
trr = f (diF/dt)
Qrr =f(diF/dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125 °C
800
350
nC
18A
ns
700
650
trr
Qrr
18A
9A
4.5A
250
600
9A
550
200
500
150
4.5A
450
400
100
350
50
200
300
400
500
600
700
800
300
200
A/µs 1000
di F/dt
300
400
500
600
700
800
A/µs 1000
diF/dt
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
Irr = f (diF/dt)
S = f(diF /dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125°C
14
14
A
18A
9A
4.5A
12
10
11
10
S
Irr
18A
9A
4.5A
8
9
6
8
7
4
6
2
5
4
200
Rev.2
300
400
500
600
700
800
A/µs 1000
di F/dt
Page 5
0
200
300
400
500
600
700
800
A/µs 1000
diF/dt
2003-07-31
IDP09E60
IDB09E60
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1
IDP09E60
K/W
ZthJC
10 0
10 -1
D = 0.50
0.20
0.10
0.05
10 -2
0.02
single pulse
10 -3 -7
10
10
-6
10
-5
0.01
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2
Page 6
2003-07-31
IDP09E60
IDB09E60
TO-220-2-2
N
A
P
dimensions
[mm]
symbol
E
D
U
H
B
V
F
W
X
J
L
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
1.05 typ.
M
2.54 typ.
0.1 typ.
N
4.4 typ.
0.173 typ.
P
G
T
C
Rev.2
M
1.10
1.40
0.41 typ.
0.0433
0.0551
2.4 typ.
0.095 typ.
0.26 typ.
U
6.6 typ.
V
13.0 typ.
0.51 typ.
W
7.5 typ.
0.295 typ.
X
T
[inch]
min
0.00
0.40
0.0000
0.0157
K
Page 7
2003-07-31
IDP09E60
IDB09E60
TO-220-3-45 (P-TO220SMD)
dimensions
[mm]
symbol
min
A
max
B
0.3858 0.3937
0.0512 typ.
C
1.25
0.0492
D
0.95
1.15
2.54 typ.
0.0374 0.0453
0.1 typ.
G
0.72
0.85
5.08 typ.
0.0283 0.0335
0.2 typ.
H
4.30
4.50
0.1693
K
1.28
1.40
0.0504
0.0551
L
9.00
9.40
0.3543
0.3701
M
N
2.30
2.50
14.1 typ.
0.0906 0.0984
0.5551 typ.
P
0.00
0.0000
Q
R
3.30
3.90
8° max
0.1299 0.1535
8° max
S
1.70
0.0669
T
U
0.50
0.65
10.8 typ.
0.0197 0.0256
0.4252 typ.
V
1.35 typ.
0.0532 typ.
W
6.43 typ.
0.2532 typ.
X
4.60 typ.
0.1811 typ.
Y
9.40 typ.
0.3701 typ.
Z
16.15 typ.
0.6358 typ.
F
Page 8
min
9.80
10.00
1.3 typ.
E
Rev.2
[inch]
max
1.75
0.20
2.50
0.0689
0.1772
0.0079
0.0984
2003-07-31
IDP09E60
IDB09E60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev.2
Page 9
2003-07-31
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