IDT IDT7016L15PFG High-speed 16k x 9 dual-port static ram Datasheet

HIGH-SPEED
16K X 9 DUAL-PORT
STATIC RAM
Features
◆
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial:12/15/20/25/35ns (max.)
– Industrial: 20ns (max.)
– Military: 20/25/35ns (max.)
Low-power operation
– IDT7016S
Active: 750mW (typ.)
Standby: 5mW (typ.)
– IDT7016L
Active: 750mW (typ.)
Standby: 1mW (typ.)
◆
◆
◆
◆
◆
◆
◆
◆
◆
IDT7016S/L
IDT7016 easily expands data bus width to 18 bits or more
using the Master/Slave select when cascading more than
one device
M/S = VIH for BUSY output flag on Master
M/S = VIL for BUSY input on Slave
Busy and Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in ceramic 68-pin PGA, 68-pin PLCC, and an 80pin TQFP
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
Functional Block Diagram
OEL
OER
CEL
R/WL
CER
R/WR
I/O0L- I/O8L
I/O0R-I/O8R
I/O
Control
I/O
Control
(1,2)
BUSYL
A13L
A0L
(1,2)
BUSYR
Address
Decoder
MEMORY
ARRAY
14
CEL
OEL
R/WL
SEML
(2)
INTL
A13R
Address
Decoder
A0R
14
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
CER
OER
R/WR
SEMR
(2)
INTR
M/S
NOTES:
1. In MASTER mode: BUSY is an output and is a push-pull driver
In SLAVE mode: BUSY is input.
2. BUSY outputs and INT outputs are non-tri-stated push-pull drivers.
3190 drw 01
APRIL 2006
1
©2006 Integrated Device Technology, Inc.
DSC 3190/9
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Description
The IDT7016 is a high-speed 16K x 9 Dual-Port Static RAM. The
IDT7016 is designed to be used as stand-alone Dual-Port RAMs or as
a combination MASTER/SLAVE Dual-Port RAM for 18-bit-or-more wider
systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 18bit or wider memory system applications results in full-speed, error-free
operation without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64-pin PLCC
and an 80-pinTQFP (Thin Quad Flatpack). Military grade product is
manufactured in compliance with the latest revision of MIL-PRF-38535
QML, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
I/O1L
I/O0L
I/O8L
OEL
R/WL
SEML
CEL
N/C
A13L
VCC
A12L
A11L
A10L
A9L
A8L
A7L
A6L
Pin Configurations(1,2,3)
11/19/01
INDEX
9
10
1 68 67 66 65 64 63 62 61
60
11
59
12
58
13
57
14
56
15
16
8
7
6
5
4
3
2
IDT7016J
J68-1(4)
17
18
19
55
54
53
68-Pin PLCC
Top View(5)
52
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O7R
I/O8R
OER
R/WR
SEMR
CER
N/C
A13R
GND
A12R
A11R
A10R
A9R
A8R
A7R
A6R
A5R
I/O2L
I/O3L
I/O4L
I/O5L
GND
I/O6L
I/O7L
VCC
GND
I/O0R
I/O1R
I/O2R
VCC
I/O3R
I/O4R
I/O5R
I/O6R
A5L
A4L
A3L
A2L
A1L
A0L
INTL
BUSYL
GND
M/S
BUSYR
INTR
A0R
A1R
A2R
A3R
A4R
,
3190 drw 02
Pin Names (7016)
Left Port
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not imply orientation of Part-marking.
Right Port
Names
CEL
CER
Chip Enable
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L - A13L
A0R - A13R
Address
I/O0L - I/O8L
I/O0R - I/O8R
Data Input/Output
SEML
SEMR
Semaphore Enable
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
M/S
Master or Slave Select
VCC
Power
GND
Ground
3190 tbl 01
2
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
A9L
A8L
66
65
64
63
NC
NC
A11L
A10L
68
67
A7L
VCC
A12L
70
69
A6L
NC
A13L
(con't.)
72
79
78
77
76
SEML
CEL
NC
I/O1L
I/O0L
I/O8L
80
11/19/01
OEL
R/WL
Pin Configurations
(1,2,3)
62
61
71
75
74
73
INDEX
NC
1
60
NC
I/O2L
2
59
A5L
I/O3L
3
58
A4L
I/O4L
4
57
A3L
I/O5L
5
56
A2L
GND
6
55
A1L
I/O6L
7
54
I/O7L
8
53
A0L
INTL
52
BUSYL
51
50
GND
M/S
IDT7016PF
PN80-1(4)
9
NC
10
GND
11
I/O0R
12
49
BUSYR
I/O1R
13
48
INTR
I/O2R
14
47
A0R
VCC
15
46
A1R
I/O3R
16
45
I/O4R
17
44
A2R
A3R
I/O5R
18
43
I/O6R
19
42
A4R
NC
NC
20
41
NC
3190 drw 03
NC
39
37
38
A6R
A5R
NC
35
36
A7R
33
34
A9R
A8R
32
A11R
A10R
A12R
30
31
29
A13R
GND
26
27
28
NC
NC
CER
24
25
R/WR
SEMR
21
I/O7R
I/O8R
OER
22
23
80-Pin TQFP
Top View(5)
40
VCC
11/19/01
51
11
A5L
50
A4L
48
A2L
46
44
42
40
38
A0L BUSYL M/S INTR A1R
36
A3R
49
A3L
47
A1L
45
43
41
39
37
INTL GND BUSYR A0R A2R
35
A4R
34
A5R
53
A7L
52
10
55
A9L
54
09
A8L
32
A7R
33
A6R
08
57
56
A11L A10L
30
A9R
31
A8R
07
59
58
VCC A12L
IDT7016G
G68-1(4)
06
61
60
N/C A13L
68-Pin PGA
Top View(5)
A6L
28
29
A11R A10R
63
62
05 SEML
CEL
26
GND
27
A12R
24
N/C
25
A13R
04
65
64
OEL R/WL
22
23
SEMR CER
03
67
66
I/O0L I/O8L
20
21
OER R/WR
02
1
3
68
I/O1L I/O2L I/O4L
NOTES:
1. All V CC pins must be connected to power supply.
01
2. All GND pins must be connected to ground supply.
3. PN80-1 package body is approximately
A
14mm x 14mm x 1.4mm.
INDEX
G68-1 package body is approximately
1.18 in x 1.18 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
2
4
I/O3L I/O5L
6.42
3
B
C
5
7
9
11
13
15
GND I/O7L GND I/O1R VCC I/O4R
18
19
I/O7R I/O8R
6
8
I/O6L VCC
17
I/O6R
D
E
10
12
14
16
I/O0R I/O2R I/O3R I/O5R
F
G
H
J
K
,
L
3190 drw 04
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs(1)
Outputs
CE
R/W
OE
SEM
I/O0-8
H
X
X
H
High-Z
Deselcted: Power-Down
L
L
X
H
DATAIN
Write to Memory
L
H
L
H
DATAOUT
X
X
H
X
High-Z
Mode
Read Memory
Outputs Disabled
3190 tbl 02
NOTE:
Condition: A0L — A13L ≠ A0R — A13R
1.
Truth Table II: Semaphore Read/Write Control(1)
Inputs
Outputs
CE
R/W
OE
SEM
I/O0-8
H
H
L
L
DATAOUT
H
↑
X
L
DATAIN
L
X
X
L
____
Mode
Read Semaphore Flag Data Out (I/O0 - I/O8)
Write I/O0 into Semaphore Flag
Not Allowed
3190 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from all I/Os (I/O0-I/O8). These eight semaphores are addressed by A 0 - A2.
Absolute Maximum Ratings(1)
Symbol
VTERM(2)
TBIAS
Rating
Commercial
& Industrial
Military
Unit
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
Temperature
Under Bias
-55 to +125
Maximum Operating
Temperature and Supply Voltage(1)
Grade
Military
-65 to +135
o
Commercial
C
IOUT
Storage
Temperature
DC Output
Current
-65 to +150
50
-65 to +150
50
o
GND
Vcc
-55OC to +125OC
0V
5.0V + 10%
0OC to +70OC
0V
5.0V + 10%
0V
5.0V + 10%
O
Industrial
TSTG
Ambient
Temperature
O
-40 C to +85 C
C
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
mA
3190 tbl 05
3190 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.
Recommended DC Operating
Conditions
Symbol
Parameter
VCC
Supply Voltage
GND
Ground
VIH
VIL
Input High Voltage
Input Low Voltage
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 10%.
4
6.42
Min.
Typ.
Max.
Unit
4.5
5.0
5.5
V
0
0
0
V
2.2
____
(1)
-0.5
____
(2)
6.0
0.8
V
V
3190 tbl 06
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
(TA = +25°C, f = 1.0mhz, for TQFP ONLY)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
Max.
Unit
V IN = 3dV
9
pF
V OUT = 3dV
10
pF
3190 tbl 07
NOTES:
1. This parameter is determined by device characteristics but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V .
DC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
7016S
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
10
___
5
µA
10
___
5
µA
___
0.4
___
0.4
V
2.4
___
2.4
___
V
(1)
Input Leakage Current
VCC = 5.5V, VIN = 0V to VCC
___
|ILO |
Output Leakage Current
CE = VIH, VOUT = 0V to V CC
___
VOL
Output Low Voltage
IOL = +4mA
VOH
Output High Voltage
IOH = -4mA
|ILI|
7016L
3190 tbl 08
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
Output Loads and AC Test
Conditions
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
3ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
Figures 1 and 2
3190 tbl 09
5V
5V
893Ω
DATAOUT
BUSY
INT
893Ω
DATAOUT
347Ω
30pF
5pF*
347Ω
,
3190 drw 06
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for tLZ, tHZ , tWZ, tOW)
*Including scope and jig.
6.42
5
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1) (con't.) (VCC = 5.0V ± 10%)
7016X12
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Test Condition
Version
CE = VIL, Outputs Disabled
SEM = VIH
f = fMAX(3)
7016X15
Com'l Only
Typ.(2)
Max.
Typ. (2)
Max.
Unit
mA
COM'L
S
L
170
170
325
275
170
170
310
260
MIL &
IND
S
L
____
____
____
____
____
____
____
____
COM'L
S
L
25
25
70
60
25
25
60
50
MIL &
IND
S
L
____
____
____
____
____
____
____
____
CE"A" = VIL and CE"B" = V IH(5)
Active Port Outputs Disabled,
f=fMAX(3)
SEMR = SEML = VIH
COM'L
S
L
105
105
200
170
105
105
190
160
MIL &
IND
S
L
____
____
____
____
____
____
____
____
Both Ports CEL and
CER > VCC - 0.2V
V IN > V CC - 0.2V or
V IN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
MIL &
IND
S
L
____
____
____
____
____
____
____
____
COM'L
S
L
100
100
180
150
100
100
170
140
MIL &
IND
S
L
____
____
____
____
____
____
____
____
CER = CEL = VIH
SEMR = SEML = VIH
f = fMAX(3)
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC - 0.2V
V IN > V CC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
mA
mA
mA
mA
3190 tbl 10
7016X20
Com'l, Ind
& Military
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS Level
Inputs)
7016X25
Com'l &
Military
7016X35
Com'l &
Military
Typ. (2)
Max.
Typ.(2)
Max.
Typ.(2)
Max.
Unit
CE = VIL, Outputs Disabled
SEM = VIH
f = fMAX(3)
COM'L
S
L
160
160
290
240
155
155
265
220
150
150
250
210
mA
MIL &
IND
S
L
160
160
380
310
155
155
340
280
150
150
300
250
CER = CEL = VIH
SEMR = SEML = VIH
f = fMAX(3)
COM'L
S
L
20
20
60
50
16
16
60
50
13
13
60
50
MIL &
IND
S
L
20
20
80
65
16
16
80
65
13
13
80
65
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(3)
SEMR = SEML = VIH
COM'L
S
L
95
95
180
150
90
90
170
140
85
85
155
130
MIL &
IND
S
L
95
95
240
210
90
90
215
180
85
85
190
160
Both Ports CEL and
CER > VCC - 0.2V
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC - 0.2V
COM'L
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
MIL &
IND
S
L
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
COM'L
S
L
90
90
155
130
85
85
145
120
80
80
135
110
MIL &
IND
S
L
90
90
230
200
85
85
200
170
80
80
175
150
Test Condition
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC - 0.2V
VIN > VCC - 0.2V or V IN < 0.2V
Active Port Outputs Disabled
f = fMAX(3)
Version
NOTES:
1. 'X' in part numbers indicates power rating (S or L)
2. VCC = 5V, TA = +25°C, and are not production tested. ICCDC = 120mA(typ.)
3. At f = fMAX, address and I/Os are cycling at the maximum frequency read cycle of 1/tRC.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
6
6.42
mA
mA
mA
mA
3190 tbl 11
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
7016X12
Com'l Only
Symbol
Parameter
7016X15
Com'l Only
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
12
____
15
____
ns
tAA
Address Access Time
____
12
____
15
ns
tACE
Chip Enable Access Time (3)
____
12
____
15
ns
tAOE
Output Enable Access Time
____
8
____
10
ns
3
____
3
____
ns
3
____
3
____
ns
____
10
____
10
ns
0
____
0
____
ns
____
12
____
15
ns
10
____
ns
____
15
ns
tOH
Output Hold from Address Change
(1,2)
tLZ
Output Low-Z Time
tHZ
Output High-Z Time (1,2)
tPU
Chip Enable to Power Up Time (2)
(2)
tPD
Chip Disable to Power Down Time
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
____
tSAA
Semaphore Address Access Time
____
12
3190 tbl 12a
7016X20
Com'l, Ind
& Military
Symbol
Parameter
7016X25
Com'l &
Military
7016X35
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
20
____
25
____
35
____
ns
Address Access Time
____
READ CYCLE
tRC
20
____
25
____
35
ns
tACE
Chip Enable Access Time
(3)
____
20
____
25
____
35
ns
tAOE
Output Enable Access Time
____
12
____
13
____
20
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tLZ
Output Low-Z Time(1,2)
3
____
3
____
3
____
ns
tHZ
(1,2)
____
12
____
15
____
20
ns
0
____
0
____
0
____
ns
tAA
Output High-Z Time
(2)
tPU
Chip Enable to Power Up Time
tPD
Chip Disable to Power Down Time (2)
____
20
____
25
____
35
ns
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
____
10
____
10
____
ns
Semaphore Address Access Time
____
20
____
25
____
35
ns
tSAA
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. 'X' in part numbers indicates power rating (S or L).
6.42
7
3190 tbl 12b
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of Read Cycles
(5)
tRC
ADDR
(4)
tAA
(4)
tACE
CE
tAOE
(4)
OE
R/W
tLZ
tOH
(1)
(4)
DATAOUT
VALID DATA
tHZ
(2)
BUSYOUT
tBDD
(3,4)
3190 drw 07
NOTES:
1. Timing depends on which signal is asserted last, OE or CE.
2. Timing depends on which signal is de-asserted first, CE or OE.
3. tBDD delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last: tAOE, tACE, tAA or tBDD .
5. SEM = VIH.
Timing of Power-Up / Power-Down
CE
tPU
tPD
ICC
50%
50%
ISB
,
3190 drw 08
8
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
7016X12
Com'l Only
Symbol
Parameter
7016X15
Com'l Only
Min.
Max.
Min.
Max.
Unit
12
____
15
____
ns
10
____
12
____
ns
10
____
12
____
ns
0
____
0
____
ns
10
____
12
____
ns
2
____
2
____
ns
10
____
10
____
ns
____
10
____
10
ns
0
____
0
____
ns
10
ns
WRITE CYCLE
tWC
tEW
tAW
tAS
Write Cycle Time
Chip Enable to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
tWP
(3)
(3)
Write Pulse Width
tWR
tDW
tHZ
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
tDH
Data Hold Time
tWZ
(1,2)
(4)
(1,2)
____
10
____
(1,2,4)
3
____
3
____
ns
ns
Write Enable to Output in High-Z
tOW
Output Active from End-of-Write
tSWRD
SEM Flag Write to Read Time
5
____
5
____
tSPS
SEM Flag Contention Window
5
____
5
____
ns
3190 tbl 13a
Symbol
Parameter
7016X35
Com'l &
Military
7016X25
Com'l &
Military
7016X20
Com'l, Ind
& Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
20
____
25
____
35
____
ns
15
____
20
____
30
____
ns
15
____
20
____
30
____
ns
0
____
0
____
0
____
ns
WRITE CYCLE
tWC
tEW
tAW
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
(3)
tAS
Address Set-up Time
tWP
Write Pulse Width
15
____
20
____
25
____
ns
tWR
Write Recovery Time
2
____
2
____
2
____
ns
tDW
Data Valid to End-of-Write
15
____
15
____
15
____
ns
tHZ
Output High-Z Time (1,2)
____
12
____
15
____
20
ns
tDH
Data Hold Time (4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
12
____
15
____
20
ns
tOW
Output Active from End-of-Write
(1,2,4)
3
____
3
____
3
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
3190 tbl 13b
6.42
9
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC
ADDRESS
tHZ (7)
OE
tAW
CE or SEM
(9)
tWP (2)
tAS (6)
tWR
(3)
R/W
tLZ
DATAOUT
tWZ (7)
tOW
(4)
(4)
tDW
tDH
DATAIN
3190 drw 09
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5)
tWC
ADDRESS
tAW
CE or SEM
(9)
(6)
tAS
tEW (2)
tWR
(3)
R/W
tDW
tDH
DATAIN
3190 drw 10
NOTES:
1. R/W or CE must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or tWP ) of a LOW CE and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last, CE or R/W.
7. This parameter is guaranteed by device characterization but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure
2).
8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + t DW) to allow the I/O drivers to turn off and data to be
placed on the bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as
the specified tWP .
9. To access RAM, CE = VIL and SEM = VIH. To access Semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition.
10
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tSAA
VALID ADDRESS
VALID ADDRESS
A0-A2
tWR
tAW
tACE
tEW
SEM
tOH
tDW
DATAIN
VALID
I/O
tAS
tWP
tSOP
DATAOUT
VALID(2)
tDH
R/W
tAOE
tSWRD
OE
Read Cycle
Write Cycle
3190 drw 11
NOTES:
1. CE = VIH for the duration of the above timing (both write and read cycle).
2. “DATAOUT VALID” represents all I/O's (I/O0-I/O8) equal to the semaphore value.
Timing Waveform of Semaphore Write Condition(1,3,4)
A0"A"-A2 "A"
(2)
SIDE
"A"
MATCH
R/W"A"
SEM"A"
tSPS
A0"B"-A2 "B"
(2)
SIDE
"B"
MATCH
R/W"B"
SEM"B"
3190 drw 12
NOTES:
1. DOR = DOL =VIH, CE R = CEL =VIH.
2. All timing is the same for left and right ports. Port“A” may be either left or right port. “B” is the opposite port from “A”.
3. This parameter is measured from R/W“A” or SEM “A” going HIGH to R/W“B” or SEM“B” going HIGH.
4. If tSPS is not satisfied, there is no guarantee which side will obtain the semaphore flag.
6.42
11
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(6)
7016X12
Com'l Only
Symbol
Parameter
7016X15
Com'l Only
Min.
Max.
Min.
Max.
Unit
12
____
15
ns
BUSY TIMING (M/S = VIH)
tBAA
BUSY Access Time from Address Match
____
tBDA
BUSY Disable Time from Address Not Matched
____
12
____
15
ns
tBAC
BUSY Access Time from Chip Enable Low
____
12
____
15
ns
tBDC
BUSY Disab le Time from Chip Enable High
____
12
____
15
ns
tAPS
Arbitration Priority Set-up Time (2)
5
____
5
____
ns
tBDD
BUSY Disable to Valid Data(3)
____
15
____
18
ns
tWH
Write Hold After BUSY(5)
11
____
13
____
ns
BUSY INPUT TIMING (M/S = VIL)
tWB
BUSY Input to Write (4)
0
____
0
____
ns
tWH
Write Hold After BUSY(5)
11
____
13
____
ns
____
25
____
30
ns
20
____
25
PORT-TO-PORT DELAY TIMING
tWDD
tDDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay
(1)
____
ns
3190 tbl 14a
7016X20
Com'l, Ind
& Military
Symbol
Parameter
7016X25
Com'l &
Military
7016X35
Com'l &
Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/S = VIH)
tBAA
BUSY Access Time from Address Match
____
20
____
20
____
20
ns
tBDA
BUSY Disable Time from Address Not Matched
____
20
____
20
____
20
ns
tBAC
BUSY Access Time from Chip Enable Low
____
20
____
20
____
20
ns
tBDC
BUSY Disab le Time from Chip Enable High
____
17
____
17
____
20
ns
5
____
5
____
5
____
ns
____
30
____
30
____
35
ns
15
____
17
____
25
____
ns
0
____
0
____
0
____
ns
15
____
17
____
25
____
ns
____
45
____
50
____
60
ns
30
____
35
____
45
ns
tAPS
Arbitration Priority Set-up Time
tBDD
BUSY Disable to Valid Data
tWH
Write Hold After BUSY
(2)
(3)
(5)
BUSY INPUT TIMING (M/S = VIL)
tWB
BUSY Input to Write (4)
tWH
Write Hold After BUSY
(5)
PORT-TO-PORT DELAY TIMING
tWDD
tDDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay
(1)
____
3190 tbl 14b
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveformof Write with Port-to-Port Read and BUSY (M/S = V IH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on Port "B" during contention on Port "A".
5. To ensure that a write cycle is completed on Port "B" after contention on Port "A".
6. 'X' in part numbers indicates power rating (S or L).
12
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read with BUSY
(2,4,5)
(M/S = VIH)
tWC
MATCH
ADDR"A"
tWP
R/W"A"
tDH
tDW
VALID
DATAIN "A"
tAPS (1)
MATCH
ADDR"B"
tBDA
tBDD
BUSY"B"
tWDD
DATAOUT "B"
VALID
tDDD (3)
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S=VIL.
2. CEL = CER = VIL.
3. OE = VIL for the reading port.
4. If M/S=VIL (SLAVE), BUSY is an input. Then for this example BUSY “A” = VIH and BUSY“B” input is shown above.
5. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from Port "A".
3190 drw 13
Timing Waveform of Write with BUSY(3)
tWP
R/W"A"
tWB
BUSY"B"
tWH
R/W"B"
(1)
(2)
3190 drw 14
NOTES:
1. tWH must be met for both BUSY input (SLAVE) and output (MASTER).
2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH.
3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from Port "A".
6.42
13
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH)
ADDR"A"
and "B"
ADDRESSES MATCH
CE"A"
tAPS (2)
CE"B"
tBAC
tBDC
BUSY"B"
3190 drw 15
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing(1) (M/S = VIH)
ADDR"A"
ADDRESS "N"
tAPS
(2)
ADDR"B"
MATCHING ADDRESS "N"
tBAA
tBDA
BUSY"B"
3190 drw 16
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1)
7016X12
Com'l Only
Symbol
Parameter
7016X15
Com'l Only
Min.
Max.
Min.
Max.
Unit
0
____
0
____
ns
ns
INTERRUPT TIMING
tAS
Address Set-up Time
tWR
Write Recovery Time
0
____
0
____
tINS
Interrupt Set Time
____
12
____
15
ns
tINR
Interrupt Reset Time
____
12
____
15
ns
3190 tbl 15a
Symbol
Parameter
7016X35
Com'l &
Military
7016X25
Com'l &
Military
7016X20
Com'l, Ind
& Military
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tINS
Interrupt Set Time
____
20
____
20
____
25
ns
tINR
Interrupt Reset Time
____
20
____
20
____
25
ns
3190 tbl 15b
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
14
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing
(1)
tWC
ADDR"A"
INTERRUPT SET ADDRESS
tAS
(2)
(3)
tWR
(4)
CE"A"
R/W"A"
tINS
(3)
INT"B"
3190 drw 17
tRC
ADDR"B"
INTERRUPT CLEAR ADDRESS
tAS
(2)
(3)
CE"B"
OE"B"
tINR
(3)
INT"B"
3190 drw 18
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. See Interrupt truth table.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
Truth Table III — Interrupt Flag(1)
Left Port
R/WL
L
X
X
X
CEL
L
X
X
L
OEL
X
X
X
L
Right Port
A13L-A0L
3FFF
X
X
3FFE
INTL
X
R/WR
X
CER
X
OER
X
A13R-A0R
X
INTR
Function
(2)
Set Right INTR Flag
(3)
L
X
L
L
3FFF
H
Reset Right INTR Flag
(3)
L
L
X
3FFE
X
Set Left INTL Flag
(2)
X
X
X
X
X
Reset Left INTL Flag
X
L
H
3190 tbl 16
NOTES:
1. Assumes BUSYL = BUSY R = VIH.
2. If BUSYL = V IL, then no change.
3. If BUSYR = VIL, then no change.
6.42
15
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table IV — Address BUSY
Arbitration
Inputs
Outputs
CEL
CER
AOL-A13L
AOR-A13R
BUSYL(1)
BUSYR(1)
Function
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
3190 tbl 17
NOTES:
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSYX outputs on the IDT7016 are
push-pull, not open drain outputs. On slaves the BUSYX input internally inhibits writes.
2. "L" if the inputs to the opposite port were stable prior to the address and enable inputs of this port. "H" if the inputs to the opposite port became stable after the address
and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSY R outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when BUSYR outputs are driving LOW regardless of actual logic level on the pin.
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)
Functions
D0 - D8 Left
D0 - D8 Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
3190 tbl 18
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT7016.
2. There are eight semaphore flags written to via I/O0 and read from all I/Os (I/O0 - I/O8). These eight semaphores are addressed by A 0 - A2.
e. CE = VIH, SEM = VIL to access the semaphores. Refer to the semaphore Read/Write Truth Table.
Functional Description
The IDT7016 provides two ports with separate control, address and
I/O pins that permit independent access for reads or writes to any location
in memory. The IDT7016 has an automatic power down feature controlled
by CE. The CE controls on-chip power down circuitry that permits the
respective port to go into a standby mode when not selected (CE HIGH).
When a port is enabled, access to the entire memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail box
or message center) is assigned to each port. The left port interrupt flag
(INTL) is asserted when the right port writes to memory location 3FFE
where a write is defined as the CE = R/W = VIL per Truth Table III. The
left port clears the interrupt by an address location 3FFE access when CER
=OER =VIL, R/W is a "don't care". Likewise, the right port interrupt flag
(INTR) is asserted when the left port writes to memory location 3FFF and
to clear the interrupt flag (INTR), the right port must access memory
location 3FFF. The message (9 bits) at 3FFE or 3FFF is user-defined
since it is in an addressable SRAM location. If the interrupt function is not
used, address locations 3FFE and 3FFF are not used as mail boxes but
are still part of the random access memory. Refer to Truth Table III for the
interrupt operation.
16
6.42
APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Busy Logic
Busy Logic provides a hardware indication that both ports of the RAM
have accessed the same location at the same time. It also allows one of the
two accesses to proceed and signals the other side that the RAM is “busy”.
The BUSY pin can then be used to stall the access until the operation on
the other side is completed. If a write operation has been attempted from
the side that receives a BUSY indication, the write signal is gated internally
to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applications.
In some cases it may be useful to logically OR the BUSY outputs together
and use any BUSY indication as an interrupt source to flag the event of
an illegal or illogical operation. If the write inhibit function of BUSY logic is
not desirable, the BUSY logic can be disabled by placing the part in slave
mode with the M/S pin. Once in slave mode the BUSY pin operates solely
as a write inhibit input pin. Normal operation can be programmed by tying
the BUSY pins HIGH. If desired, unintended write operations can be
prevented to a port by tying the BUSY pin for that port LOW.
The BUSY outputs on the IDT7016 RAM in master mode, are pushpull type outputs and do not require pull up resistors to operate. If these
RAMs are being expanded in depth, then the BUSY indication for the
resulting array requires the use of an external AND gate.
Width Expansion Busy Logic
Master/Slave Arrays
When expanding an IDT7016 RAM array in width while using BUSY
logic, one master part is used to decide which side of the RAM array will
receive a BUSY indication, and to output that indication. Any number of
slaves to be addressed in the same address range as the master use the
BUSY signal as a write inhibit signal. Thus on the IDT7016 RAM the BUSY
pin is an output if the part is used as a master (M/S pin = H), and the BUSY
pin is an input if the part used as a slave (M/S pin = L) as shown in
Figure 3.
If two or more master parts were used when expanding in width, a split
decision could result with one master indicating BUSY on one side of the
array and another master indicating BUSY on one other side of the array.
This would inhibit the write operations from one port for part of a word and
inhibit the write operations from the other port for the other part of the word.
The BUSY arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write. In
a master/slave array, both address and chip enable must be valid long
enough for a BUSY flag to be output from the master before the actual write
pulse can be initiated with the R/W signal. Failure to observe this timing can
result in a glitched internal write inhibit signal and corrupted data in the
slave.
Semaphores
The IDT7016 are extremely fast Dual-Port 16Kx9 Static RAMs with
an additional 8 address locations dedicated to binary semaphore flags.
These flags allow either processor on the left or right side of the Dual-Port
RAM to claim a privilege over the other processor for functions defined by
the system designer’s software. As an example, the semaphore can be
used by one processor to inhibit the other from accessing a portion of the
Dual-Port RAM or any other shared resource.
The Dual-Port RAM features a fast access time, and both ports are
completely independent of each other. This means that the activity on the
BUSY (L)
CE
MASTER
Dual Port
RAM
BUSY (L) BUSY (R)
CE
SLAVE
Dual Port
RAM
BUSY (L) BUSY (R)
CE
MASTER
Dual Port
RAM
BUSY (L) BUSY (R)
CE
SLAVE
Dual Port
RAM
BUSY (L) BUSY (R)
DECODER
Military, Industrial and Commercial Temperature Ranges
BUSY (R)
3190 drw 19
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT7016 RAMs.
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAM and can be read from,
or written to, at the same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous
situations and may be used by the system program to avoid any conflicts
in the non-semaphore portion of the Dual-Port RAM. These devices have
an automatic power-down feature controlled by CE, the Dual-Port RAM
enable, and SEM, the semaphore enable. The CE and SEM pins control
on-chip power down circuitry that permits the respective port to go into
standby mode when not selected. This is the condition which is shown in
Truth Table I where CE and SEM are both HIGH.
Systems which can best use the IDT7016 contain multiple processors
or controllers and are typically very high-speed systems which are
software controlled or software intensive. These systems can benefit from
a performance increase offered by the IDT7016's hardware semaphores,
which provide a lockout mechanism without requiring complex programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated in varying
configurations. The IDT7016 does not use its semaphore flags to control
any resources through hardware, thus allowing the system designer total
flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred in
either processor. This can prove to be a major advantage in very highspeed systems.
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent
of the Dual-Port RAM. These latches can be used to pass a flag, or token,
from one port to the other to indicate that a shared resource is in use. The
semaphores provide a hardware assist for a use assignment method
called “Token Passing Allocation.” In this method, the state of a semaphore
latch is used as a token indicating that shared resource is in use. If the left
processor wants to use this resource, it requests the token by setting the
latch. This processor then verifies its success in setting the latch by reading
it. If it was successful, it proceeds to assume control over the shared
resource. If it was not successful in setting the latch, it determines that the
right side processor has set the latch first, has the token and is using the
shared resource. The left processor can then either repeatedly request
that semaphore’s status or remove its request for that semaphore to
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IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
perform another task and occasionally attempt again to gain control of the
token via the set and test sequence. Once the right side has relinquished
the token, the left side should succeed in gaining control.
The semaphore flags are active LOW. A token is requested by writing
a zero into a semaphore latch and is released when the same side writes
a one to that latch.
The eight semaphore flags reside within the IDT7016 in a separate
memory space from the Dual-Port RAM. This address space is accessed
by placing a LOW input on the SEM pin (which acts as a chip select for the
semaphore flags) and using the other control pins (Address, OE, and
R/W) as they would be used in accessing a standard static RAM. Each
of the flags has a unique address which can be accessed by either side
through address pins A0 – A2. When accessing the semaphores, none of
the other address pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a low level
is written into an unused semaphore location, that flag will be set to a zero
on that side and a one on the other side (see Truth Table V). That
semaphore can now only be modified by the side showing the zero. When
a one is written into the same location from the same side, the flag will be
set to a one for both sides (unless a semaphore request from the other side
is pending) and then can be written to by both sides. The fact that the side
which is able to write a zero into a semaphore subsequently locks out
writes from the other side is what makes semaphore flags useful in
interprocessor communications. (A thorough discussion on the use of this
feature follows shortly.) A zero written into the same location from the other
side will be stored in the semaphore request latch for that side until the
semaphore is freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so
that a flag that is a one reads as a one in all data bits and a flag containing
a zero reads as all zeros. The read value is latched into one side’s output
register when that side's semaphore select (SEM) and output enable (OE)
signals go active. This serves to disallow the semaphore from changing
state in the middle of a read cycle due to a write cycle from the other side.
Because of this latch, a repeated read of a semaphore in a test loop must
cause either signal (SEM or OE) to go inactive or the output will never
change.
A sequence WRITE/READ must be used by the semaphore in order
to guarantee that no system level contention will occur. A processor
requests access to shared resources by attempting to write a zero into a
semaphore location. If the semaphore is already in use, the semaphore
request latch will contain a zero, yet the semaphore flag will appear as one,
a fact which the processor will verify by the subsequent read (see Truth
Table V). As an example, assume a processor writes a zero to the left port
at a free semaphore location. On a subsequent read, the processor will
verify that it has written successfully to that location and will assume control
over the resource in question. Meanwhile, if a processor on the right side
attempts to write a zero to the same semaphore flag it will fail, as will be
verified by the fact that a one will be read from that semaphore on the right
side during subsequent read. Had a sequence of READ/WRITE been
used instead, system contention problems could have occurred during
the gap between the read and write cycles.
It is important to note that a failed semaphore request must be followed
by either repeated reads or by writing a one into the same location. The
reason for this is easily understood by looking at the simple logic diagram
of the semaphore flag in Figure 4. Two semaphore request latches feed
into a semaphore flag. Whichever latch is first to present a zero to the
semaphore flag will force its side of the semaphore flag LOW and the other
side HIGH. This condition will continue until a one is written to the same
semaphore request latch. Should the other side’s semaphore request latch
have been written to a zero in the meantime, the semaphore flag will flip
over to the other side as soon as a one is written into the first side’s request
latch. The second side’s flag will now stay LOW until its semaphore request
latch is written to a one. From this it is easy to understand that, if a semaphore
is requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request a
single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives
the token. If one side is earlier than the other in making the request, the first
side to make the request will receive the token. If both requests arrive at
the same time, the assignment will be arbitrarily made to one port or the
other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is secure.
As with any powerful programming technique, if semaphores are misused
or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be handled
via the initialization program at power-up. Since any semaphore request
flag which contains a zero must be reset to a one, all semaphores on both
sides should have a one written into them at initialization from both sides
to assure that they will be free when needed.
Using Semaphores—Some Examples
Perhaps the simplest application of semaphores is their application as
resource markers for the IDT7016’s Dual-Port RAM. Say the 16K x 9 RAM
was to be divided into two 8K x 9 blocks which were to be dedicated at any
one time to servicing either the left or right port. Semaphore 0 could be used
to indicate the side which would control the lower section of memory, and
Semaphore 1 could be defined as the indicator for the upper section of
memory.
To take a resource, in this example the lower 8K of Dual-Port RAM,
the processor on the left port could write and then read a zero in to
Semaphore 0. If this task were successfully completed (a zero was read
back rather than a one), the left processor would assume control of the
lower 8K. Meanwhile the right processor was attempting to gain control of
the resource after the left processor, it would read back a one in response
to the zero it had attempted to write into Semaphore 0. At this point, the
software could choose to try and gain control of the second 8K section by
writing, then reading a zero into Semaphore 1. If it succeeded in gaining
control, it would lock out the left side.
Once the left side was finished with its task, it would write a one to
Semaphore 0 and may then try to gain access to Semaphore 1. If
Semaphore 1 was still occupied by the right side, the left side could undo
its semaphore request and perform other tasks until it was able to write, then
read a zero into Semaphore 1. If the right processor performs a similar task
with Semaphore 0, this protocol would allow the two processors to swap
8K blocks of Dual-Port RAM with each other.
The blocks do not have to be any particular size and can even be
variable, depending upon the complexity of the software using the
18
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IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
semaphore flags. All eight semaphores could be used to divide the DualPort RAM or other shared resources into eight parts. Semaphores can
even be assigned different meanings on different sides rather than being
given a common meaning as was shown in the example above.
Semaphores are a useful form of arbitration in systems like disk
interfaces where the CPU must be locked out of a section of memory during
a transfer and the I/O device cannot tolerate any wait states. With the use
of semaphores, once the two devices has determined which memory area
was “off-limits” to the CPU, both the CPU and the I/O devices could access
their assigned portions of memory continuously without any wait states.
Semaphores are also useful in applications where no memory “WAIT”
state is available on one or both sides. Once a semaphore handshake has
been performed, both processors can access their assigned RAM
segments at full speed.
Another application is in the area of complex data structures. In this
case, block arbitration is very important. For this application one processor
may be responsible for building and updating a data structure. The other
processor then reads and interprets that data structure. If the interpreting
processor reads an incomplete data structure, a major error condition may
exist. Therefore, some sort of arbitration must be used between the two
different processors. The building processor arbitrates for the block, locks
it and then is able to go in and update the data structure. When the update
is completed, the data structure block is released. This allows the
interpreting processor to come back and read the complete data structure,
thereby guaranteeing a consistent data structure.
L PORT
R PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
D
SEMAPHORE
REQUEST FLIP FLOP
Q
Q
D
WRITE
D0
WRITE
SEMAPHORE
READ
SEMAPHORE
READ
,
3190 drw 20
Figure 4. IDT7016 Semaphore Logic
6.42
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APRIL 04, 2006
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX
Device
Type
A
999
A
Power Speed Package
A
A
Process/
Temperature
Range
Blank
I(1)
B
G
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
Military (-55°C to +125°C)
Compliant to MIL-PRF-38535 QML
Green
(2)
PF
G
J
80-pin TQFP (PN80-1)
68-pin PGA (G68-1)
68-pin PLCC (J68-1)
12
15
20
25
35
Commercial Only
Commercial Only
Com'l, Ind & Military
Commercial & Military
Commercial & Military
S
L
Standard Power
Low Power
7016
144K (16K x 9) Dual-Port RAM
,
Speed in Nanoseconds
3190 drw 21
NOTES:
1. Contact your local sales office for industrial temp range for other speeds, packages and powers.
2. Green parts available. For specific speeds, packages and powers contact your local sales office.
Datasheet Document History
01/11/99:
Pages 2 and 3
06/03/99
Page 1
11/10/99:
05/19/00:
Page 4
Page 6
01/10/02:
04/04/06:
Pages 2 & 3
Pages 4, 6, 7, 9 & 12
Pages 6, 7, 9, 12 & 14
Page 20
Pages 1 & 20
Page 1
Page 20
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Added additional notes to pin configurations
Changed drawing format
Corrected DSC number
Replaced IDT logo
Increased storage temperature parameter
Clarified TA parameter
DC Electrical parameters–changed wording from open to disabled
Changed ±200mV to 0mV in notes
Added date revision for pin configurations
Removed Industrial temp footnote from all tables
Added Industrial temp for 20ns speed to DC and AC Electrical Characteristics
Added Industrial temp offering to 20ns ordering information
Replaced TM logo with ® logo
Added green availability to features
Added indicator to ordering information
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20
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