IDT IDT70V25L20PF High-speed 3.3v 8k x 16 dual-port static ram Datasheet

IDT70V25S/L
HIGH-SPEED 3.3V
8K x 16 DUAL-PORT
STATIC RAM
Features
◆
◆
◆
◆
◆
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 15/20/25/35/55ns (max.)
– Industrial: 20/25/35/55ns (max.)
Low-power operation
– IDT70V25S
Active: 400mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V25L
Active: 380mW (typ.)
Standby: 660µW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
◆
◆
◆
◆
◆
◆
◆
◆
IDT70V25 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = VIH for BUSY output flag on Master
M/S = VIL for BUSY input on Slave
BUSY and Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
LVTTL-compatible, single 3.3V (±0.3V) power supply
Available in 84-pin PGA, 84-pin PLCC and 100-pin TQFP
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/WL
UBL
R/WR
UBR
LBL
CEL
OEL
LBR
CER
OER
,
I/O8L-I/O15L
I/O8R-I/O15R
I/O
Control
I/O
Control
I/O0L-I/O7L
I/O0R-I/O7R
(1,2)
BUSYR(1,2)
BUSYL
A12L
A0L
Address
Decoder
MEMORY
ARRAY
13
CEL
OEL
R/WL
SEML
INTL(2)
Address
Decoder
A12R
A0R
13
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/S
CER
OER
R/WR
SEMR
INTR(2)
2944 drw 01
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY outputs and INT outputs are non-tri-stated push-pull.
MAY 2000
1
©2000 Integrated Device Technology, Inc.
DSC-2944/8
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Description
The IDT70V25 is a high-speed 8K x 16 Dual-Port Static RAM. The
IDT70V25 is designed to be used as a stand-alone Dual-Port RAM or
as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or wider
memory system applications results in full-speed, error-free operation
without the need for additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 400mW of power.
The IDT70V25 is packaged in a ceramic 84-pin PGA, an 84-Pin
PLCC and a 100-pin Thin Quad Flatpack.
A8L
A10L
A9L
A12L
A11L
CEL
UBL
LBL
SEML
R/WL
OEL
VCC
I/O1L
I/O0L
I/O2L
GND
I/O3L
INDEX
I/O5L
I/O4L
I/O7L
I/O6L
Pin Configurations(1,2,3)
11 10 9 8 7 6 5 4 3 2 1 84 83 82 81 80 79 78 77 76 75
74
I/O8L
I/O9L
12
13
I/O10L
I/O11L
14
15
73
72
71
I/O12L
I/O13L
16
17
70
69
GND
I/O14L
18
19
20
IDT70V25J
J84-1(4)
21
22
84-Pin PLCC
Top View(5)
64
63
GND
57
56
30
31
A7R
A8R
A10R
A9R
LBR
A12R
A11R
UBR
CER
GND
SEMR
55
54
32
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53
I/O9R
I/O7R
I/O8R
28
29
OER
R/WR
I/O5R
I/O6R
INTL
60
59
58
26
27
I/O14R
GND
I/O15R
I/O3R
I/O4R
66
65
62
61
I/O13R
I/O2R
VCC
23
24
25
I/O12R
GND
I/O0R
I/O1R
I/O10R
I/O11R
I/O15L
VCC
68
67
A7L
A6L
A5L
A4L
A3L
A2L
A1L
A0L
BUSYL
M/S
BUSYR
INTR
A0R
A1R
A2R
A3R
A4R
A5R
A6R
2944 drw 02
1100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 7675
2
74
3
73
72
4
5
71
70
6
7
8
69
68
67
66
9
10
11
12
13
14
IDT70V25PF
PN100-1(4)
100-Pin TQFP
Top View(5)
65
64
63
16
62
61
60
17
59
18
58
19
57
56
55
15
20
21
22
23
24
54
53
52
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
I/O7R
I/O8R
I/O9R
I/O10R
I/O11R
I/O12R
I/O13R
I/O14R
GND
I/O15R
OER
R/WR
GND
SEMR
CER
UBR
LBR
A12R
A11R
A10R
A9R
A8R
A7R
A6R
A5R
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. J84-1 package body is approximately 1.15 in x 1.15 in x .17 in.
PN100-1 package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
N/C
N/C
N/C
N/C
I/O10L
I/O11L
I/O12L
I/O13L
GND
I/O14L
I/O15L
VCC
GND
I/O0R
I/O1R
I/O2R
VCC
I/O3R
I/O4R
I/O5R
I/O6R
N/C
N/C
N/C
N/C
I/O9L
I/O8L
I/O7L
I/O6L
I/O5L
I/O4L
I/O3L
I/O2L
GND
I/O1L
I/O0L
OEL
VCC
R/WL
SEML
CEL
UBL
LBL
A12L
A11L
A10L
A9L
A8L
A7L
A6L
Index
6.42
2
N/C
N/C
N/C
N/C
A5L
A4L
A3L
A2L
A1L
A0L
INTL
BUSYL
GND
M/S
BUSYR
INTR
A0R
A1R
A2R
A3R
A4R
N/C
N/C
N/C
N/C
,
2944 drw 03
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Pin Configurations(1,2,3) (con't.)
63
11
61
66
10
64
I/O10L
67
09
I/O13L
I/O15L
UBL
CEL
53
GND
47
45
A11L
44
A12L
A9L
41
BUSYL
VCC
IDT70V25G
G84-3(4)
GND
32
VCC
29
7
5
I/O10R
4
I/O11R
B
11
GND
2
I/O9R
A1L
30
INTR
BUSYR
27
A2R
I/O7R
3
A
M/S
A0R
83
I/O8R
36
31
28
INTL
A0L
GND
84-Pin PGA
Top View(5)
A2L
34
26
1
A4L
37
35
I/O4R
I/O6R
39
A6L
80
I/O5R
A5L
A3L
78
I/O2R
A7L
40
A8L
R/WL
33
74
GND
I/O3R
42
A10L
43
52
VCC
73
I/O14L
I/O1R
84
01
50
46
LBL
38
77
82
02
I/O1L
48
SEML
49
57
70
81
03
I/O3L
51
OEL
I/O12L
I/O0R
79
04
I/O6L
56
I/O9L
71
76
05
59
62
54
I/O0L
68
75
06
55
I/O2L
65
72
07
58
I/O4L
I/O8L
I/O11L
69
08
60
I/O5L
I/O7L
8
I/O13R
6
I/O12R
C
I/O15R
D
14
OER
E
A5R
17
UBR
R/WR
15
25
23
SEMR
10
9
I/O14R
12
GND
13
A1R
20
A11R
16
22
A8R
18
LBR
CER
A12R
F
G
H
A3R
24
A6R
19
A10R
A4R
21
A9R
J
K
L
2944 drw 04
Index
NOTES:
1. All VCC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. Package body is approximately 1.12 in x 1.12 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part marking.
A7R
Pin Names
Left Port
Right Port
Names
CEL
CER
Chip Enable
R/WL
R/WR
Read/Write Enable
OEL
OER
Output Enable
A0L - A12L
A0R - A12R
Address
I/O0L - I/O15L
I/O0R - I/O15R
Data Input/Output
SEML
SEMR
Semaphore Enable
UBL
UBR
Upper Byte Select
LBL
LBR
Lower Byte Select
INTL
INTR
Interrupt Flag
BUSYL
BUSYR
Busy Flag
M/S
Master or Slave Select
VCC
Power
GND
Ground
2944 tbl 01
6.42
3
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs(1)
Outputs
CE
R/W
OE
UB
LB
SEM
I/O8-15
I/O0-7
H
X
X
X
X
H
High-Z
High-Z
Deselected: Power Down
X
X
X
H
H
H
High-Z
High-Z
Both Bytes Deselected
L
L
X
L
H
H
DATAIN
High-Z
Write to Upper Byte Only
L
L
X
H
L
H
High-Z
DATA IN
Write to Lower Byte Only
L
L
X
L
L
H
DATAIN
DATA IN
Write to Both Bytes
L
H
L
L
H
H
DATA OUT
High-Z
Read Upper Byte Only
L
H
L
H
L
H
High-Z
DATAOUT
Read Lower Byte Only
L
H
L
L
L
H
DATA OUT
DATAOUT
Read Both Bytes
X
X
H
X
X
X
High-Z
High-Z
Outputs Disabled
Mode
2944 tbl 02
NOTE:
1. A0L — A12L ≠ A0R — A12R
Truth Table II: Semaphore Read/Write Control(1)
Inputs
Outputs
CE
R/W
OE
UB
LB
SEM
I/O8-15
I/O0-7
H
H
L
X
X
L
DATAOUT
DATA OUT
Read Data in Semaphore Flag
X
H
L
H
H
L
DATAOUT
DATA OUT
Read Data in Semaphore Flag
H
↑
X
X
X
L
DATAIN
DATAIN
Write DIN0 into Semaphore Flag
X
↑
X
H
H
L
DATAIN
DATAIN
Write DIN0 into Semaphore Flag
L
____
____
Not Allowed
L
____
____
Not Allowed
L
L
X
X
X
X
L
X
X
L
Mode
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from all of the I/O's (I/O0-I/O15). These eight semaphores are addressed by A0-A2.
6.42
4
2944 tbl 03
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
VTERM(2)
Rating
Commercial
& Industrial
Unit
Terminal Voltage
with Respect
to GND
-0.5 to +4.6
V
Maximum Operating Temperature
and Supply Voltage(1)
Grade
Commercial
TBIAS
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-55 to +125
o
C
IOUT
DC Output
Current
Ambient
Temperature
GND
Vcc
0OC to +70OC
0V
3.3V + 0.3V
0V
3.3V + 0.3V
O
O
-40 C to +85 C
Industrial
2944 tbl 05
50
NOTES:
1. This is the parameter TA.
mA
2944 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed Vcc + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 0.3V.
Recommended DC Operating
Conditions
Symbol
Capacitance(1) (TA = +25°C, f = 1.0MHz)
Symbol
CIN
COUT
Parameter
Conditions(2)
Max.
Unit
VIN = 3dV
9
pF
VOUT = 3dV
10
Input Capacitance
Output Capacitance
Parameter
VCC
Supply Voltage
GND
Ground
Min.
Typ.
Max.
Unit
3.0
3.3
3.6
V
0
0
0
VIH
Input High Voltage
2.0
____
VIL
Input Low Voltage
-0.5(1)
____
V
(2)
VCC+0.3
0.8
V
V
2944 tbl 06
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed Vcc + 0.3V.
pF
2944 tbl 07
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VCC = 3.3V ± 0.3V)
70V25S
Symbol
Parameter
Test Conditions
70V25L
Min.
Max.
Min.
Max.
Unit
|ILI|
Input Leakage Current(1)
VCC = 3.6V, VIN = 0V to V CC
___
10
___
5
µA
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to V CC
___
10
___
5
µA
0.4
___
0.4
V
___
2.4
___
V
VOL
Output Low Voltage
IOL = +4mA
___
VOH
Output High Voltage
IOH = -4mA
2.4
2944 tbl 08
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
6.42
5
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(1) (VCC = 3.3V ± 0.3V)
70V25X15
Com'l Only
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports CMOS Level Inputs)
Full Standby Current
(One Port CMOS Level Inputs)
Test Condition
CE = VIL, Outputs Open
SEM = VIH
f = fMAX(3)
Version
70V25X20
Com'l
& Ind
70V25X25
Com'l
& Ind
Typ.(2)
Max.
Typ.(2)
Max.
Typ. (2)
Max.
Unit
mA
COM'L
S
L
150
140
215
185
140
130
200
175
130
125
190
165
IND
S
L
____
____
____
____
140
130
225
195
130
125
210
180
COM'L
S
L
25
20
35
30
20
15
30
25
16
13
30
25
MIL &
IND
S
L
____
____
____
____
20
15
45
40
16
13
45
40
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Open,
f=fMAX(3)
SEMR = SEML = VIH
COM'L
S
L
85
80
120
110
80
75
110
100
75
72
110
95
MIL &
IND
S
L
____
____
____
____
80
75
130
115
75
72
125
110
Both Ports CEL and
CER > VCC - 0.2V,
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0(4)
SEMR = SEML > VCC-0.2V
COM'L
S
L
1.0
0.2
5
2.5
1.0
0.2
5
2.5
1.0
0.2
5
2.5
MIL &
IND
S
L
____
____
____
____
1.0
0.2
15
5
1.0
0.2
15
5
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC-0.2V
VIN > VCC - 0.2V or V IN < 0.2V
Active Port Outputs Open,
f = fMAX(3)
COM'L
S
L
85
80
125
105
80
75
115
100
75
70
105
90
MIL &
IND
S
L
____
____
____
____
80
75
130
115
75
70
120
105
CER and CEL = VIH
SEMR = SEML = VIH
f = fMAX(3)
mA
mA
mA
mA
2944 tbl 09a
70V25X35
Com'l
& Ind
Symbol
ICC
ISB1
ISB2
ISB3
ISB4
Parameter
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL
Level Inputs)
Standby Current
(One Port - TTL
Level Inputs)
Full Standby Current
(Both Ports CMOS Level Inputs)
Full Standby Current
(One Port CMOS Level Inputs)
Test Condition
Version
70V25X55
Com'l
& Ind
Typ.(2)
Max.
Typ. (2)
Max.
Unit
COM'L
S
L
120
115
180
155
120
115
180
155
mA
IND
S
L
120
115
200
170
120
115
200
170
COM'L
S
L
13
11
25
20
13
11
25
20
MIL &
IND
S
L
13
11
40
35
13
11
40
35
COM'L
S
L
70
65
100
90
70
65
100
90
MIL &
IND
S
L
70
65
120
105
70
65
120
105
Both Ports CEL and
CER > VCC - 0.2V,
VIN > VCC - 0.2V or
VIN < 0.2V, f = 0 (4)
SEMR = SEML > VCC-0.2V
COM'L
S
L
1.0
0.2
5
2.5
1.0
0.2
5
2.5
MIL &
IND
S
L
1.0
0.2
15
5
1.0
0.2
15
5
CE"A" < 0.2V and
CE"B" > VCC - 0.2V(5)
SEMR = SEML > VCC-0.2V
VIN > VCC - 0.2V or V IN < 0.2V
Active Port Outputs Open,
f = fMAX(3)
COM'L
S
L
65
60
100
85
65
60
100
85
MIL &
IND
S
L
65
60
115
100
65
60
115
100
CE = VIL, Outputs Open
SEM = VIH
f = fMAX(3)
CER and CEL = VIH
SEMR = SEML = VIH
f = fMAX(3)
CE"A" = VIL and CE"B" = VIH(5)
Active Port Outputs Open,
f=fMAX(3)
SEMR = SEML = VIH
mA
mA
mA
mA
2944 tbl 09b
NOTES:
1. 'X' in part number indicates power rating (S or L)
2. VCC = 3.3V, TA = +25°C, and are not production tested. Icc dc = 115mA (typ.)
3. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND
to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
6.42
6
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Test Conditions
Input Pulse Levels
3.3V
3.3V
GND to 3.0V
Input Rise/Fall Times
3ns Max.
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
Output Load
590Ω
590Ω
DATAOUT
BUSY
INT
DATAOUT
435Ω
Figures 1 and 2
435Ω
30pF
,
2944 tbl 10
2944 drw 05
Figure 1. AC Output Test Load
Figure 2. Output Test
Load
(For tLZ, tHZ, tWZ, tOW)
*Including scope and jig.
Timing of Power-Up Power-Down
CE
ICC
5pF*
tPU
tPD
50%
50%
ISB
2944 drw 06
6.42
7
,
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
70V25X15
Com'l Only
Symbol
Parameter
70V25X20
Com'l
& Ind
70V25X25
Com'l
& Ind
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
15
____
20
____
25
____
ns
tAA
Address Access Time
____
15
____
20
____
25
ns
tACE
Chip Enable Access Time (3)
____
15
____
20
____
25
ns
tABE
Byte Enable Access Time (3)
____
15
____
20
____
25
ns
tAOE
Output Enable Access Time (3)
____
10
____
12
____
13
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tLZ
Output Low-Z Time(1,2)
3
____
3
____
3
____
ns
tHZ
Output High-Z Time (1,2)
____
10
____
12
____
15
ns
tPU
Chip Enable to Power Up Time (1,2)
0
____
0
____
0
____
ns
tPD
Chip Disable to Power Down Time(1,2)
____
15
____
20
____
25
ns
tSOP
Semaphore Flag Update Pulse (OE or SEM)
10
____
10
____
10
____
ns
tSAA
Semaphore Address Access (3)
____
15
____
20
____
25
ns
2944 tbl 11a
70V25X35
Com'l
& Ind
Symbol
Parameter
70V25X55
Com'l
& Ind
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
35
____
55
____
ns
tAA
Address Access Time
____
35
____
55
ns
tACE
Chip Enable Access Time(3)
____
35
____
55
ns
tABE
(3)
____
Byte Enable Access Time
(3)
35
____
55
ns
____
20
____
30
ns
tAOE
Output Enable Access Time
tOH
Output Hold from Address Change
3
____
3
____
ns
tLZ
Output Low-Z Time(1,2)
3
____
3
____
ns
tHZ
Output High-Z Time(1,2)
____
15
____
25
ns
0
____
0
____
ns
____
35
____
50
ns
tPU
Chip Enable to Power Up Time
(1,2)
(1,2)
tPD
Chip Disable to Power Down Time
tSOP
Semaphore Flag Update Pulse (OE or SEM)
15
____
15
____
ns
tSAA
Semaphore Address Access(3)
____
35
____
55
ns
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL, UB or LB = VIL, and SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL.
4. 'X' in part number indicates power rating (S or L).
6.42
8
2944 tbl 11b
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Waveform of Read Cycles(5)
tRC
ADDR
(4)
CE
tAA
(4)
tACE
tAOE
(4)
OE
tABE
(4)
UB, LB
R/W
tLZ
tOH
(1)
(4)
DATAOUT
VALID DATA
tHZ
(2)
BUSYOUT
tBDD
(3,4)
2944 drw 07
NOTES:
1. Timing depends on which signal is asserted last, OE, CE, LB, or UB.
2. Timing depends on which signal is de-asserted first, CE, OE, LB, or UB.
3. tBDD delay is required only in case where opposite port is completing a write operation to the same address location for simultaneous read operations BUSY has no
relation to valid output data.
4. Start of valid data depends on which timing becomes effective last tABE, tAOE, tACE , tAA or tBDD .
5. SEM = VIH.
6.42
9
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (5)
70V25X15
Com'l Only
Symbol
Parameter
70V25X20
Com'l
& Ind
70V25X25
Com'l
& Ind
Min.
Max.
Min.
Max.
Min.
Max.
Unit
15
____
20
____
25
____
ns
12
____
15
____
20
____
ns
12
____
15
____
20
____
ns
0
____
0
____
0
____
ns
12
____
15
____
20
____
ns
ns
WRITE CYCLE
tWC
tEW
tAW
tAS
Write Cycle Time
Chip Enable to End-of-Write
(3)
Address Valid to End-of-Write
Address Set-up Time
(3)
Write Pulse Width
tWP
tWR
Write Recovery Time
0
____
0
____
0
____
tDW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
tHZ
Output High-Z Time (1,2)
____
10
____
12
____
15
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
____
10
____
12
____
15
ns
0
____
0
____
0
____
ns
5
____
5
____
5
____
ns
5
____
5
____
5
____
ns
(1,2)
tWZ
Write Enable to Output in High-Z
tOW
Output Active from End-of-Write
tSWRD
SEM Flag Write to Read Time
tSPS
SEM Flag Contention Window
(1,2,4)
2944 tbl 12a
70V25X35
Com'l
& Ind
Symbol
Parameter
70V25X55
Com'l
& Ind
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
35
____
55
____
ns
tEW
Chip Enable to End-of-Write(3)
30
____
45
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
ns
tAS
Address Set-up Time (3)
0
____
0
____
ns
25
____
40
____
ns
0
____
0
____
ns
15
____
30
____
ns
____
15
____
25
ns
0
____
0
____
ns
____
15
____
25
ns
0
____
0
____
ns
5
____
5
____
ns
5
____
5
____
tWP
tWR
tDW
tHZ
tDH
tWZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time
Data Hold Time
(1,2)
(4)
(1,2)
Write Enable to Output in High-Z
tOW
Output Active from End-of-Write
tSWRD
SEM Flag Write to Read Time
tSPS
SEM Flag Contention Window
(1,2,4)
ns
2944 tbl 12b
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM = VIL. Either condition must be valid for the entire
tEW time.
4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part number indicates power rating (S or L).
6.42
10
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC
ADDRESS
tHZ
(7)
OE
tAW
(9)
CE or SEM
(9)
CE or SEM
tAS
(6)
tWP
(3)
(2)
tWR
R/W
tWZ
DATAOUT
(7)
tOW
(4)
(4)
tDW
tDH
DATAIN
2944 drw 08
Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5)
tWC
ADDRESS
tAW
(9)
CE or SEM
tAS (6)
tWR (3)
tEW (2)
(9)
UB or LB
R/W
tDW
tDH
DATAIN
2944 drw 09
NOTES:
1. R/W or CE or UB & LB must be HIGH during all address transitions.
2. A write occurs during the overlap (tEW or t WP) of a LOW UB or LB and a LOW CE and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of CE or R/W (or SEM or R/W) going HIGH to the end-of-write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition the outputs remain in the HIGH-impedance state.
6. Timing depends on which enable signal is asserted last, CE, R/W, or UB or LB.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with Output Test Load
(Figure 2).
8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be
placed on the bus for the required t DW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as
the specified t WP.
9. To access SRAM, CE = VIL, UB or LB = VIL, and SEM = VIH. To access Semaphore, CE = VIH or UB and LB = VIH, and SEM = V IL. tEW must be met for either condition.
6.42
11
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tOH
tSAA
A0-A2
VALID ADDRESS
tAW
VALID ADDRESS
tWR
tACE
tEW
SEM
tSOP
tDW
DATAIN
VALID
I/O0
tAS
tWP
DATAOUT
VALID(2)
tDH
R/W
tSWRD
tAOE
OE
Write Cycle
Read Cycle
2944 drw 10
NOTES:
1. CE = VIH or UB & LB = VIH for the duration of the above timing (both write and read cycle).
2. “DATAOUT VALID” represents all I/O's (I/O0-I/O15 ) equal to the semaphore value.
Timing Waveform of Semaphore Write Contention(1,3,4)
A0"A"-A2"A"
(2)
SIDE
"A"
MATCH
R/W"A"
SEM"A"
tSPS
A0"B"-A2"B"
(2)
SIDE
"B"
MATCH
R/W"B"
SEM"B"
2944 drw 11
NOTES:
1. DOR = DOL = VIL, CER = CEL = VIH, or both UB & LB = VIH.
2. All timing is the same for left and right port. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
3. This parameter is measured from R/W"A" or SEM "A" going HIGH to R/W"B" or SEM"B" going HIGH.
4. If tSPS is not satisfied, there is no guarantee which side will obtain the semaphore flag.
6.42
12
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(6)
70V25X15
Com'l Ony
Symbol
Parameter
70V25X20
Com'l
& Ind
70V25X25
Com'l
& Ind
Min.
Max.
Min.
Max.
Min.
Max.
Unit
15
____
20
____
20
ns
15
____
20
____
20
ns
BUSY TIMING (M/S = VIH)
tBAA
BUSY Access Time from Address Match
____
tBDA
BUSY Disable Time from Address Not Matched
____
tBAC
BUSY Ac cess Time from Chip Enable LOW
____
15
____
20
____
20
ns
tBDC
BUSY Disable Time from Chip Enable HIGH
____
15
____
17
____
17
ns
5
____
5
____
5
____
ns
____
18
____
30
____
30
ns
12
____
15
____
17
____
ns
0
____
0
____
0
____
ns
12
____
15
____
17
____
ns
tAPS
Arbitration Priority Set-up Time
tBDD
BUSY Disable to Valid Data
tWH
Write Hold After BUSY
(2)
(3)
(5)
BUSY TIMING (M/S = VIL)
tWB
BUSY Input to Write(4)
tWH
Write Hold After BUSY
(5)
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
30
____
45
____
50
ns
tDDD
Write Data Valid to Read Data Delay (1)
____
25
____
35
____
35
ns
2944 tbl 13a
70V25X35
Com'l
& Ind
Symbol
Parameter
70V25X55
Com'l
& Ind
Min.
Max.
Min.
Max.
Unit
BUSY TIMING (M/S = VIH)
tBAA
BUSY Access Time from Address Match
____
20
____
45
ns
tBDA
BUSY Disable Time from Address Not Matched
____
20
____
40
ns
tBAC
BUSY Ac cess Time from Chip Enable LOW
____
20
____
40
ns
tBDC
BUSY Disable Time from Chip Enable HIGH
____
20
____
35
ns
tAPS
Arbitration Priority Set-up Time (2)
5
tBDD
BUSY Disable to Valid Data(3)
tWH
Write Hold After BUSY
(5)
____
5
____
ns
____
35
____
40
ns
25
____
25
____
ns
0
____
0
____
ns
25
____
25
____
ns
BUSY TIMING (M/S = VIL)
tWB
BUSY Input to Write(4)
tWH
Write Hold After BUSY
(5)
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
60
____
80
ns
tDDD
Write Data Valid to Read Data Delay (1)
____
45
____
65
ns
2944 tbl 13b
NOTES:
1. Port-to-port delay through SRAM cells from writing port to reading port, refer to "TIMING WAVEFORM OF WRITE PORT-TO-PORT READ AND
BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6. 'X' in part number indicates power rating (S or L).
6.42
13
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write Port-to-Port Read and BUSY(2,4,5) (M/S = VIH)
tWC
ADDR"A"
MATCH
tWP
R/W"A"
tDH
tDW
DATAIN "A"
VALID
tAPS
(1)
ADDR"B"
MATCH
tBAA
tBDA
tBDD
BUSY"B"
tWDD
DATAOUT "B"
VALID
tDDD
(3)
2944 drw 12
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (slave).
2. CEL = CER = VIL.
3. OE = VIL for the reading port.
4. If M/S = VIL (slave), BUSY is an input. Then for this example BUSY“A” = VIH and BUSY“B” input is shown above.
5. All timing is the same for both left and right ports. Port “A” may be either the left or right port. Port “B ” is the port opposite from port “A”.
6.42
14
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with BUSY
tWP
R/W"A"
tWB
(3)
BUSY"B"
tWH
R/W"B"
(1)
(2)
2944 drw 13 ,
NOTES:
1. tWH must be met for both master BUSY input (slave) and output (master).
2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH.
3. tWB is only for the slave version.
Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH)
ADDR"A"
and "B"
ADDRESSES MATCH
CE"A"
tAPS (2)
CE"B"
tBAC
tBDC
BUSY"B"
2944 drw 14
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing(1) (M/S = VIH)
ADDR"A"
ADDRESS "N"
tAPS
(2)
ADDR"B"
MATCHING ADDRESS "N"
tBAA
tBDA
BUSY"B"
2944 drw 15
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
6.42
15
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1)
70V25X15
Com'l Only
Symbol
Parameter
70V25X20
Com'l
& Ind
70V25X25
Com'l
& Ind
Min.
Max.
Min.
Max.
Min.
Max.
Unit
0
____
0
____
0
____
ns
0
____
0
____
0
____
ns
15
____
20
____
20
ns
15
____
20
____
20
ns
INTERRUPT TIMING
Address Set-up Time
tAS
tWR
Write Recovery Time
tINS
Interrupt Set Time
____
tINR
Interrupt Reset Time
____
2944 tbl 14a
70V25X35
Com'l
& Ind
Symbol
Parameter
70V25X55
Com'l
& Ind
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tINS
Interrupt Set Time
____
25
____
40
ns
Interrupt Reset Time
____
25
____
40
tINR
ns
2944 tbl 14b
NOTES:
1. 'X' in part number indicates power rating (S or L).
6.42
16
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing(1)
tWC
ADDR"A"
INTERRUPT SET ADDRESS
(2)
(3)
tAS
tWR
(4)
CE"A"
R/W"A"
tINS (3)
INT"B"
2944 drw 16
tRC
INTERRUPT CLEAR ADDRESS
ADDR"B"
(2)
tAS(3)
CE"B"
OE"B"
tINR
(3)
INT"B"
2944 drw 17
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. See Interrupt Flag Truth Table III.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
6.42
17
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table III — Interrupt Flag(1)
Left Port
CEL
R/WL
L
OEL
L
X
X
1FFF
X
X
X
L
INTL
A12L-A0L
X
X
X
Right Port
L
CER
R/WR
X
X
X
OER
A12R-A0R
X
INTR
Function
L(2)
Set Right INTR Flag
X
X
X
X
L
L
1FFF
H
Reset Right INTR Flag
X
L(3)
L
L
X
1FFE
X
Set Left INTL Flag
(2)
X
X
X
X
X
Reset Left INTL Flag
1FFE
H
(3)
2944 tbl 15
NOTES:
1. Assumes BUSYL = BUSYR = VIH .
2. If BUSY L = VIL, then no change.
3. If BUSY R = VIL, then no change.
Truth Table IV — Address BUSY
Arbitration
Inputs
Outputs
CEL
CER
A12L-A0L
A12R-A0R
BUSYL(1)
BUSYR(1)
Function
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
2944 tbl 16
NOTES:
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the IDT70V25 are
push pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. VIH if the inputs to the opposite port became stable after the address
and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSY L and BUSYR outputs cannot be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored
when BUSYR outputs are driving LOW regardless of actual logic level on the pin.
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)
Functions
D0 - D15 Left
D0 - D15 Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70V25.
2. There are eight semaphore flags written to via I/O0 and read from all I/O's (I/O0-I/O15). These eight semaphores are addressed by A 0-A2.
3. CE = VIH, SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Tables.
6.42
18
2944 tbl 17
IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
BUSYL
CE
SLAVE
CE
Dual Port
SRAM
BUSYR
BUSYL
BUSYR
MASTER
CE
Dual Port
SRAM
BUSYR
BUSYL
SLAVE
CE
Dual Port
SRAM
BUSYR
BUSYL
DECODER
MASTER
Dual Port
SRAM
BUSYL
Industrial and Commercial Temperature Ranges
BUSYR
2944 drw 18
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70V25 SRAMs.
Functional Description
The IDT70V25 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT70V25 has an automatic power down
feature controlled by CE. The CE controls on-chip power down circuitry
that permits the respective port to go into a standby mode when not
selected (CE HIGH). When a port is enabled, access to the entire
memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag (INTL) is asserted when the right port writes to memory location
1FFE (HEX), where a write is defined as the CER = R/WR = VIL per
Truth Table III. The left port clears the interrupt by an address location
1FFE access when CEL = OEL = VIL, R/WL is a "don't care". Likewise,
the right port interrupt flag (INTR) is set when the left port writes to
memory location 1FFF (HEX) and to clear the interrupt flag (INTR), the
right port must read the memory location 1FFF. The message (16 bits)
at 1FFE or 1FFF is user-defined, since it is an addressable SRAM
location. If the interrupt function is not used, address locations 1FFE
and 1FFF are not used as mail boxes, but as part of the random access
memory. Refer to Truth Table III for the interrupt operation.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
SRAM have accessed the same location at the same time. It also
allows one of the two accesses to proceed and signals the other side
that the SRAM is “busy”. The BUSY pin can then be used to stall the
access until the operation on the other side is completed. If a write
operation has been attempted from the side that receives a BUSY
indication, the write signal is gated internally to prevent the write from
proceeding.
The use of BUSY logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag the
event of an illegal or illogical operation. If the write inhibit function of
BUSY logic is not desirable, the BUSY logic can be disabled by placing
the part in slave mode with the M/S pin. Once in slave mode the BUSY
pin operates solely as a write inhibit input pin. Normal operation can be
programmed by tying the BUSY pins HIGH. If desired, unintended
write operations can be prevented to a port by tying the BUSY pin for that
port LOW.
The BUSY outputs on the IDT 70V25 SRAM in master mode, are
push-pull type outputs and do not require pull up resistors to operate. If
these SRAMs are being expanded in depth, then the BUSY indication for
the resulting array requires the use of an external AND gate.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an IDT70V25 SRAM array in width while using
BUSY logic, one master part is used to decide which side of the SRAM
array will receive a BUSY indication, and to output that indication. Any
number of slaves to be addressed in the same address range as the
master, use the BUSY signal as a write inhibit signal. Thus on the
IDT70V25 SRAM the BUSY pin is an output if the part is used as a
master (M/S pin = VIH), and the BUSY pin is an input if the part used
as a slave (M/S pin = VIL) as shown in Figure 3.
If two or more master parts were used when expanding in width, a
split decision could result with one master indicating BUSY on one side
of the array and another master indicating BUSY on one other side of
the array. This would inhibit the write operations from one port for part
of a word and inhibit the write operations from the other port for the
other part of the word.
The BUSY arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a BUSY flag to be output from the master before the
actual write pulse can be initiated with either the R/W signal or the byte
enables. Failure to observe this timing can result in a glitched internal
write inhibit signal and corrupted data in the slave.
Semaphores
The IDT70V25 is an extremely fast Dual-Port 8K x 16 CMOS Static
RAM with an additional 8 address locations dedicated to binary
semaphore flags. These flags allow either processor on the left or right
side of the Dual-Port SRAM to claim a privilege over the other
processor for functions defined by the system designer’s software. As
an example, the semaphore can be used by one processor to inhibit
the other from accessing a portion of the Dual-Port SRAM or any other
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IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
shared resource.
The Dual-Port SRAM features a fast access time, and both ports
are completely independent of each other. This means that the activity
on the left port in no way slows the access time of the right port. Both
ports are identical in function to standard CMOS Static RAM and can
be accessed at the same time with the only possible conflict arising
from the simultaneous writing of, or a simultaneous READ/WRITE of,
a non-semaphore location. Semaphores are protected against such
ambiguous situations and may be used by the system program to
avoid any conflicts in the non-semaphore portion of the Dual-Port
SRAM. These devices have an automatic power-down feature controlled by CE, the Dual-Port SRAM enable, and SEM, the semaphore
enable. The CE and SEM pins control on-chip power down circuitry
that permits the respective port to go into standby mode when not
selected. This is the condition which is shown in Truth Table I where
CE and SEM are both HIGH.
Systems which can best use the IDT70V25 contain multiple
processors or controllers and are typically very high-speed systems
which are software controlled or software intensive. These systems
can benefit from a performance increase offered by the IDT70V25's
hardware semaphores, which provide a lockout mechanism without
requiring complex programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated in
varying configurations. The IDT70V25 does not use its semaphore
flags to control any resources through hardware, thus allowing the
system designer total flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred
in either processor. This can prove to be a major advantage in very
high-speed systems.
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent of the Dual-Port SRAM. These latches can be used to pass a flag,
or token, from one port to the other to indicate that a shared resource
is in use. The semaphores provide a hardware assist for a use
assignment method called “Token Passing Allocation.” In this method,
the state of a semaphore latch is used as a token indicating that shared
resource is in use. If the left processor wants to use this resource, it
requests the token by setting the latch. This processor then verifies its
success in setting the latch by reading it. If it was successful, it
proceeds to assume control over the shared resource. If it was not
successful in setting the latch, it determines that the right side
processor has set the latch first, has the token and is using the shared
resource. The left processor can then either repeatedly request that
semaphore’s status or remove its request for that semaphore to
perform another task and occasionally attempt again to gain control of
the token via the set and test sequence. Once the right side has
relinquished the token, the left side should succeed in gaining control.
The semaphore flags are active LOW. A token is requested by
writing a zero into a semaphore latch and is released when the same
side writes a one to that latch.
The eight semaphore flags reside within the IDT70V25 in a
separate memory space from the Dual-Port SRAM. This address
space is accessed by placing a LOW input on the SEM pin (which acts
as a chip select for the semaphore flags) and using the other
control pins (Address, OE, and R/W) as they would be used in
accessing a standard static RAM. Each of the flags has a unique
address which can be accessed by either side through address pins
A0 – A2. When accessing the semaphores, none of the other address
pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a LOW
level is written into an unused semaphore location, that flag will be set
to a zero on that side and a one on the other side (see Truth Table V).
That semaphore can now only be modi-fied by the side showing the
zero. When a one is written into the same location from the same side,
the flag will be set to a one for both sides (unless a semaphore request
from the other side is pending) and then can be written to by both sides.
The fact that the side which is able to write a zero into a semaphore
subsequently locks out writes from the other side is what makes
semaphore flags useful in interprocessor communications. (A thorough discussion on the use of this feature follows shortly.) A zero
written into the same location from the other side will be stored in the
semaphore request latch for that side until the semaphore is freed by
the first side.
When a semaphore flag is read, its value is spread into all data bits
so that a flag that is a one reads as a one in all data bits and a flag
containing a zero reads as all zeros. The read value is latched into one
side’s output register when that side's semaphore select (SEM) and
output enable (OE) signals go active. This serves to disallow the
semaphore from changing state in the middle of a read cycle due to a
write cycle from the other side. Because of this latch, a repeated read
of a semaphore in a test loop must cause either signal (SEM or OE) to
go inactive or the output will never change.
A sequence WRITE/READ must be used by the semaphore in
order to guarantee that no system level contention will occur. A
processor requests access to shared resources by attempting to write
a zero into a semaphore location. If the semaphore is already in use,
the semaphore request latch will contain a zero, yet the semaphore
flag will appear as one, a fact which the processor will verify by the
subsequent read (see Truth Table V). As an example, assume a
processor writes a zero to the left port at a free semaphore location. On
a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in
question. Meanwhile, if a processor on the right side attempts to write
a zero to the same semaphore flag it will fail, as will be verified by the
fact that a one will be read from that semaphore on the right side during
subsequent read. Had a sequence of READ/WRITE been used
instead, system contention problems could have occurred during the
gap between the read and write cycles.
It is important to note that a failed semaphore request must be
followed by either repeated reads or by writing a one into the same
location. The reason for this is easily understood by looking at the
simple logic diagram of the semaphore flag in Figure 4. Two semaphore request latches feed into a semaphore flag. Whichever latch is
first to present a zero to the semaphore flag will force its side of the
semaphore flag LOW and the other side HIGH. This condition will
continue until a one is written to the same semaphore request latch.
Should the other side’s semaphore request latch have been written to
a zero in the meantime, the semaphore flag will flip over to the other
side as soon as a one is written into the first side’s request latch. The
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IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
second side’s flag will now stay LOW until its semaphore request latch is
written to a one. From this it is easy to understand that, if a semaphore is
requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request
a single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If
simultaneous requests are made, the logic guarantees that only one
side receives the token. If one side is earlier than the other in making
the request, the first side to make the request will receive the token. If
both requests arrive at the same time, the assignment will be arbitrarily
made to one port or the other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is
secure. As with any powerful programming technique, if semaphores
are misused or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be
handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all
semaphores on both sides should have a one written into them at
initialization from both sides to assure that they will be free when
needed.
Using Semaphores—Some Examples
Perhaps the simplest application of semaphores is their application as resource markers for the IDT70V25’s Dual-Port SRAM. Say the
8K x 16 SRAM was to be divided into two 4K x 16 blocks which were
to be dedicated at any one time to servicing either the left or right port.
Semaphore 0 could be used to indicate the side which would control
the lower section of memory, and Semaphore 1 could be defined as the
indicator for the upper section of memory.
To take a resource, in this example the lower 4K of Dual-Port
SRAM, the processor on the left port could write and then read a zero
in to Semaphore 0. If this task were successfully completed (a zero
was read back rather than a one), the left processor would assume
control of the lower 4K. Meanwhile the right processor was attempting
to gain control of the resource after the left processor, it would read
back a one in response to the zero it had attempted to write into
Semaphore 0. At this point, the software could choose to try and gain
control of the second 4K section by writing, then reading a zero into
Semaphore 1. If it succeeded in gaining control, it would lock out the
left side.
Once the left side was finished with its task, it would write a one to
Semaphore 0 and may then try to gain access to Semaphore 1. If
Semaphore 1 was still occupied by the right side, the left side could
undo its semaphore request and perform other tasks until it was able
to write, then read a zero into Semaphore 1. If the right processor
performs a similar task with Semaphore 0, this protocol would allow the
two processors to swap 4K blocks of Dual-Port SRAM with each other.
The blocks do not have to be any particular size and can even be
variable, depending upon the complexity of the software using the
semaphore flags. All eight semaphores could be used to divide the
Dual-Port SRAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides
rather than being given a common meaning as was shown in the
example above.
Semaphores are a useful form of arbitration in systems like disk
interfaces where the CPU must be locked out of a section of memory
during a transfer and the I/O device cannot tolerate any wait states.
With the use of semaphores, once the two devices has determined
which memory area was “off-limits” to the CPU, both the CPU and the
I/O devices could access their assigned portions of memory continuously without any wait states.
Semaphores are also useful in applications where no memory
“WAIT” state is available on one or both sides. Once a semaphore
handshake has been performed, both processors can access their
assigned RAM segments at full speed.
Another application is in the area of complex data structures. In this
case, block arbitration is very important. For this application one
processor may be responsible for building and updating a data
structure. The other processor then reads and interprets that data
structure. If the interpreting processor reads an incomplete data
structure, a major error condition may exist. Therefore, some sort of
arbitration must be used between the two different processors. The
building processor arbitrates for the block, locks it and then is able to
go in and update the data structure. When the update is completed, the
data structure block is released. This allows the interpreting processor
to come back and read the complete data structure, thereby guaranteeing a consistent data structure.
L PORT
R PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
WRITE
D
SEMAPHORE
REQUEST FLIP FLOP
Q
Q
SEMAPHORE
READ
D
D0
WRITE
SEMAPHORE
READ
,
Figure 4. IDT70V25 Semaphore Logic
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IDT70V25S/L
High-Speed 8K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Ordering Information(1)
IDT XXXXX
Device
Type
A
999
A
A
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
PF
G
J
100-pin TQFP (PN100-1)
84-pin PGA (G84-3)
84-pin PLCC (J84-1)
15
20
25
35
55
Commercial Only
Commercial & Industrial
Commercial & Industrial
Commercial & Industrial
Commercial & Industrial
S
L
Standard Power
Low Power
70V25
128K (8K x 16) 3.3V Dual-Port RAM
,
Speed in Nanoseconds
2944 drw 20
Datasheet Document History
3/8/99:
5/19/99:
6/10/99:
8/30/99:
11/12/99:
11/18/99:
3/10/00:
5/16/00:
Initiated datasheet document history
Converted to new format
Cosmetic and typographical corrections
Pages 2 and 3 Added additional notes to pin configurations
Page 9 Fixed typographical error
Changed drawing format
Page 1 Chaged 660mW to 660µW
Replaced IDT logo
Page 2 Fixed pin 55 in PN100 package
Added 15 & 20ns speed grades
Upgraded DC parameters
Added Industrial Temperature information
Changed ±200 mV to 0mV in notes
Page 5 Fixed note for Absolute Maximum Ratings table
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6.42
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