IDT IDT72235LB Cmos syncfifo Datasheet

IDT72205LB, IDT72215LB,
IDT72225LB, IDT72235LB,
IDT72245LB
CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18,
2,048 x 18, and 4,096 x 18
FEATURES:
•
•
•
•
•
•
•
•
•
•
•
•
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write controls. These FIFOs are applicable for a wide variety of data buffering
needs, such as optical disk controllers, Local Area Networks (LANs), and
interprocessor communication.
These FIFOs have 18-bit input and output ports. The input port is controlled
by a free-running clock (WCLK), and an input enable pin (WEN). Data is read
into the synchronous FIFO on every clock when WEN is asserted. The output
port is controlled by another clock pin (RCLK) and another enable pin (REN).
The read clock can be tied to the write clock for single clock operation or the
two clocks can run asynchronous of one another for dual-clock operation. An
Output Enable pin (OE) is provided on the read port for three-state control of
the output.
The synchronous FIFOs have two fixed flags, Empty (EF) and Full (FF),
and two programmable flags, Almost-Empty (PAE) and Almost-Full (PAF). The
offset loading of the programmable flags is controlled by a simple state machine,
and is initiated by asserting the Load pin (LD). A Half-Full flag (HF) is available
when the FIFO is used in a single device configuration.
These devices are depth expandable using a Daisy-Chain technique. The
XI and XO pins are used to expand the FIFOs. In depth expansion configuration, First Load (FL) is grounded on the first device and set to HIGH for all
other devices in the Daisy Chain.
The IDT72205LB/72215LB/72225LB/72235LB/72245LB is fabricated
using high-speed submicron CMOS technology.
256 x 18-bit organization array (IDT72205LB)
512 x 18-bit organization array (IDT72215LB)
1,024 x 18-bit organization array (IDT72225LB)
2,048 x 18-bit organization array (IDT72235LB)
4,096 x 18-bit organization array (IDT72245LB)
10 ns read/write cycle time
Empy and Full flags signal FIFO status
Easy expandable in depth and width
Asynchronous or coincident read and write clocks
Programmable Almost-Empty and Almost-Full flags with
default settings
Half-Full flag capability
Dual-Port zero fall-through time architecture
Output enable puts output data bus in high-impedence state
High-performance submicron CMOS technology
Available in a 64-lead thin quad flatpack (TQFP/STQFP)
and plastic leaded chip carrier (PLCC)
Industrial temperature range (–40°°C to +85°°C) is available
Green parts available, see ordering information
DESCRIPTION:
The IDT72205LB/72215LB/72225LB/72235LB/72245LB are very high
speed, low-power First-In, First-Out (FIFO) memories with clocked read and
FUNCTIONAL BLOCK DIAGRAM
WCLK
D0-D17
INPUT REGISTER
WRITE CONTROL
LOGIC
WRITE POINTER
(
)/
OFFSET REGISTER
••
RAM ARRAY
256 x 18, 512 x 18
1,024 x 18, 2,048 x 18
4,096 x 18
••
FLAG
LOGIC
/(
)
READ POINTER
READ CONTROL
LOGIC
EXPANSION LOGIC
OUTPUT REGISTER
RESET LOGIC
Q0-Q17
RCLK
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. SyncFIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
2766 drw 01
MARCH 2013
1
©2013 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
DSC-2766/3
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
PIN CONFIGURATIONS
9 8 7 6 5 4 3 2
68 67 66 65 64 63 62 61
10
60
1
11
59
12
58
57
13
14
56
55
15
54
16
53
17
52
18
51
19
50
20
21
49
48
22
23
47
24
46
25
45
44
26
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
PAE
FL
WCLK
WEN
WXI
VCC
PAF
RXI
FF
WXO/HF
RXO
Q0
Q1
GND
Q2
Q3
VCC
D14
D13
D12
D11
D10
D9
VCC
D8
GND
D7
D6
D5
D4
D3
D2
D1
D0
D15
D16
D17
GND
RCLK
REN
LD
OE
RS
VCC
GND
EF
VCC
Q17
Q16
GND
Q15
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
VCC
Q14
Q13
GND
Q12
Q11
VCC
Q10
Q9
GND
Q8
Q7
VCC
Q6
Q5
GND
Q4
2766 drw 02
Q17
Q16
GND
Q15
VCC
VCC
GND
D16
D17
GND
RCLK
PLCC (J68-1, order code: J)
TOP VIEW
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
Q14
Q13
GND
Q12
Q11
VCC
Q10
Q9
GND
Q8
Q7
Q6
Q5
GND
Q4
VCC
Q0
Q1
GND
Q2
Q3
/
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
WCLK
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
PIN 1
2766 drw 03
TQFP (PN64-1, order code: PF)
STQFP (PP64-1, order code: TF)
TOP VIEW
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MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
PIN DESCRIPTION
Symbol
Name
I/O
Description
D0–D17
Data Inputs
I
Data inputs for a 18-bit bus.
RS
Reset
I
When RS is set LOW, internal read and write pointers are set to the first location of the RAM array, FF and PAF
go HIGH, and PAE and EF go LOW. A reset is required before an initial WRITE after power-up.
WCLK
Write Clock
I
When WEN is LOW, data is written into the FIFO on a LOW-to-HIGH transition of WCLK, if the FIFO is not full.
WEN
Write Enable
I
When WEN is LOW and LD is HIGH, data is written into the FIFO on every LOW-to-HIGH transition of
WCLK. When WEN is HIGH, the FIFO holds the previous data. Data will not be written into the FIFO if the FF
is LOW.
RCLK
Read Clock
I
When REN is LOW, data is read from the FIFO on a LOW-to-HIGH transition of RCLK, if the FIFO is not empty.
REN
Read Enable
I
When REN is LOW, and LD is HIGH, data is read from the FIFO on every LOW-to-HIGH transition of RCLK.
When REN is HIGH, the output register holds the previous data. Data will not be read from the FIFO if the EF
is LOW.
OE
Output Enable
I
When OE is LOW, the data output bus is active. If OE is HIGH, the output data bus will be in a high-impedance
state.
LD
Load
I
When LD is LOW, data on the inputs D0–D11 is written to the offset and depth registers on the LOW-to-HIGH
transition of the WCLK, when WEN is LOW. When LD is LOW, data on the outputs Q0–Q11 is read from the
offset and depth registers on the LOW-to-HIGH transition of the RCLK, when REN is LOW.
FL
First Load
I
In the single device or width expansion configuration, FL is grounded. In the depth expansion configuration, FL
is grounded on the first device (first load device) and set to HIGH for all other devices in the Daisy Chain.
WXI
Write Expansion
I
In the single device or width expansion configuration, WXI is grounded. In the depth expansion configuration,
WXI is connected to WXO (Write Expansion Out) of the previous device.
RXI
Read Expansion
I
In the single device or width expansion configuration, RXI is grounded. In the depth expansion configuration,
RXI is connected to RXO (Read Expansion Out) of the previous device.
FF
Full Flag
O
When FF is LOW, the FIFO is full and further data writes into the input are inhibited. When FF is HIGH, the FIFO
is not full. FF is synchronized to WCLK.
EF
Empty Flag
O
When EF is LOW, the FIFO is empty and further data reads from the output are inhibited. When EF is HIGH, the
FIFO is not empty. EF is synchronized to RCLK.
PAE
Programmable
Almost-Empty Flag
O
When PAE is LOW, the FIFO is almost empty based on the offset programmed into the FIFO. The default
offset at reset is 31 from empty for IDT72205LB, 63 from empty for IDT72215LB, and 127 from empty for
IDT72225LB/72235LB/72245LB.
PAF
Programmable
Almost-Full Flag
O
When PAF is LOW, the FIFO is almost-full based on the offset programmed into the FIFO. The default offset at
reset is 31 from full for IDT72205, 63 from full for IDT72215LB, and 127 from full for IDT72225LB/72235LB/
72245LB.
WXO/HF
Write Expansion
Out/Half-Full Flag
O
In the single device or width expansion configuration, the device is more than half full when HF is LOW. In the
depth expansion configuration, a pulse is sent from WXO to WXI of the next device when the last location in the
FIFO is written.
RXO
Read Expansion
Out
O
In the depth expansion configuration, a pulse is sent from RXO to RXI of the next device when the last
location in the FIFO is read.
Q0–Q17
Data Outputs
O
Data outputs for an 18-bit bus.
V CC
Power
+5V power supply pins.
GND
Ground
Eight ground pins for the PLCC and seven gound pins for the TQFP/STQFP.
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MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
ABSOLUTE MAXIMUM RATINGS
Symbol
Rating
Commercial
Unit
VTERM
Terminal Voltage
with respect to GND
–0.5 to +7.0
V
TSTG
Storage
Temperature
–55 to +125
°C
IOUT
DC Output Current
–50 to +50
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
VCC
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Parameter
Supply Voltage
Commercial/Industrial
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
GND
Supply Voltage
0
0
0
V
VIH
Input High Voltage
Commercial/Industrial
2.0
—
—
V
VIL(1)
Input Low Voltage
Commercial/Industrial
—
—
0.8
V
TA
Operating Temperature
Commercial
0
—
70
°C
TA
Operating Temperature
Industrial
-40
⎯
85
°C
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Industrial: VCC = 5V ± 10%V, TA = -40°C to +85°C)
Symbol
Parameter
Min.
IDT72205LB
IDT72215LB
IDT72225LB
IDT72235LB
IDT72245LB
Commercial and Industrial(1)
tCLK = 10, 15, 25 ns
Typ.
ILI(2)
Input Leakage Current (any input)
–1
—
LO(3)
I
Output Leakage Current
–10
—
10
μA
VOH
Output Logic “1” Voltage, IOH = –2 mA
2.4
—
—
V
VOL
Output Logic “0” Voltage, IOL = 8 mA
—
—
0.4
V
CC1(4,5,6)
Active Power Supply Current
Standby Current
—
—
—
—
60
5
mA
mA
I
ICC2(4,7)
Max.
Unit
1
μA
NOTES:
1. Industrial Temperature Range Product for the 15ns and the 25ns speed grades are available as a standard device.
2. Measurements with 0.4 ≤ VIN ≤ VCC.
3. OE ≥ VIH, 0.4 ≤ VOUT ≤ VCC.
4. Tested with outputs disabled (IOUT = 0).
5. RCLK and WCLK toggle at 20 MHZ and data inputs switch at 10 MHz.
6. For the IDT72205/72215/72225 the typical ICC1 = 1.81 + 1.12*fS + 0.02*CL*fS (in mA);
for the IDT72235/72245 the typical ICC1 = 2.85 + 1.30*fS + 0.02*CL*fS (in mA)
These equations are valid under the following conditions:
VCC = 5V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2, CL = capacitive load (in pF).
7. All Inputs = VCC - 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Max.
Unit
(2)
CIN
Input
Capacitance
VIN = 0V
10
pF
COUT(1,2)
Output
Capacitance
VOUT = 0V
10
pF
NOTES:
1. With output deselected, (OE ≥ VIH).
2. Characterized values, not currently tested.
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MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
AC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Industrial: VCC = 5V ± 10%, TA = -40°C to +85°C)
Commercial
IDT72205LB10
IDT72215LB10
IDT72225LB10
IDT72235LB10
IDT72245LB10
Symbol
fS
tA
tCLK
tCLKH
tCLKL
tDS
tDH
tENS
tENH
tRS
tRSS
tRSR
tRSF
tOLZ
tOE
tOHZ
tWFF
tREF
tPAF
tPAE
tHF
tXO
tXI
tXIS
tSKEW1
tSKEW2(2)
Parameter
Clock Cycle Frequency
Data Access Time
Clock Cycle Time
Clock HIGH Time
Clock LOW Time
Data Set-up Time
Data Hold Time
Enable Set-up Time
Enable Hold Time
Reset Pulse Width(2)
Reset Set-up Time
Reset Recovery Time
Reset to Flag and Output Time
Output Enable to Output in Low-Z(3)
Output Enable to Output Valid
Output Enable to Output in High-Z(3)
Write Clock to Full Flag
Read Clock to Empty Flag
Clock to Asynchronous Programmable Almost-Full Flag
Clock to Programmable Almost-Empty Flag
Clock to Half-Full Flag
Clock to Expansion Out
Expansion In Pulse Width
Expansion In Set-Up Time
Skew time between Read Clock & Write Clock forFull Flag
Skew time between Read Clock & Write Clock for Empty Flag
Min.
—
2
10
4.5
4.5
3
0
3
0
10
8
8
—
0
3
3
—
—
—
—
—
—
3
3.5
5
5
Max.
100
6.5
—
—
—
—
—
—
—
—
—
—
15
—
6
6
6.5
6.5
17
17
17
6.5
—
—
—
—
Commercial & Industrial(1)
IDT72205LB15
IDT72215LB15
IDT72225LB15
IDT72235LB15
IDT72245LB15
Min.
—
2
15
6
6
4
1
4
1
15
10
10
—
0
3
3
—
—
—
—
—
—
6.5
5
6
6
IDT72205LB25
IDT72215LB25
IDT72225LB25
IDT72235LB25
IDT72245LB25
Max.
66.7
10
—
—
—
—
—
—
—
—
—
—
20
—
8
8
10
10
24
24
24
10
—
—
—
—
Min.
—
2
25
10
10
6
1
6
1
25
15
15
—
0
3
3
—
—
—
—
—
—
10
10
10
10
Max.
40
15
—
—
—
—
—
—
—
—
—
—
25
—
12
12
15
15
26
26
26
15
—
—
—
—
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. Industrial temperature range product for the 15ns and the 25ns speed grades are available as a standard device. All other speed grades are available by special order.
2. Pulse widths less than minimum values are not allowed.
3. Values guaranteed by design, not currently tested.
5V
1.1K
D.U.T.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
680Ω
GND to 3.0V
3ns
1.5V
1.5V
See Figure 1
30pF*
2766 drw 04
Figure 1. Output Load
* Includes jig and scope capacitances.
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MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
SIGNAL DESCRIPTIONS:
OUTPUT ENABLE (OE)
When Output Enable (OE) is enabled (LOW), the parallel output buffers
receive data from the output register. When OE is disabled (HIGH), the Q output
data bus is in a high-impedance state.
INPUTS:
DATA IN (D0 - D17)
Data inputs for 18-bit wide data.
LOAD (LD)
The IDT72205LB/72215LB/72225LB/72235LB/72245LB devices contain two 12-bit offset registers with data on the inputs, or read on the outputs.
When the Load (LD) pin is set LOW and WEN is set LOW, data on the inputs
D0-D11 is written into the Empty Offset register on the first LOW-to-HIGH
transition of the Write Clock (WCLK). When the LD pin and (WEN) are held
LOW then data is written into the Full Offset register on the second LOW-to-HIGH
transition of (WCLK). The third transition of the write clock (WCLK) again writes
to the Empty Offset register.
However, writing all offset registers does not have to occur at one time. One
or two offset registers can be written and then by bringing the LD pin HIGH, the
FIFO is returned to normal read/write operation. When the LD pin is set LOW,
and WEN is LOW, the next offset register in sequence is written.
CONTROLS:
RESET (RS)
Reset is accomplished whenever the Reset (RS) input is taken to a LOW state.
During reset, both internal read and write pointers are set to the first location.
A reset is required after power-up before a write operation can take place. The
Full Flag (FF), Half-Full Flag (HF) and Programmable Almost-Full Flag (PAF)
will be reset to HIGH after tRSF. The Empty Flag (EF) and Programmable
Almost-Empty Flag (PAE) will be reset to LOW after tRSF. During reset, the output
register is initialized to all zeros and the offset registers are initialized to their default
values.
WRITE CLOCK (WCLK)
A write cycle is initiated on the LOW-to-HIGH transition of the Write Clock
(WCLK). Data setup and hold times must be met with respect to the LOW-to-HIGH
transition of WCLK.
The Write and Read Clocks can be asynchronous or coincident.
LD
WEN
0
0
WCLK
Selection
Writing to offset registers:
Empty Offset
Full Offset
WRITE ENABLE (WEN)
When the WEN input is LOW and LD input is HIGH, data may be loaded into
the FIFO RAM array on the rising edge of every WCLK cycle if the device is
not full. Data is stored in the RAM array sequentially and independently of any
ongoing read operation.
When WEN is HIGH, no new data is written in the RAM array on each WCLK
cycle.
To prevent data overflow, FF will go LOW, inhibiting further write operations.
Upon the completion of a valid read cycle, FF will go HIGH allowing a write to
occur. The FF flag is updated on the rising edge of WCLK. WEN is ignored
when the FIFO is full.
0
1
No Operation
1
0
Write Into FIFO
1
1
No Operation
NOTE:
1. The same selection sequence applies to reading from the registers. REN is enabled and
read is performed on the LOW-to-HIGH transition of RCLK.
Figure 2. Write Offset Register
READ CLOCK (RCLK)
Data can be read on the outputs on the LOW-to-HIGH transition of the Read
Clock (RCLK), when Output Enable (OE) is set LOW.
The Write and Read Clocks can be asynchronous or coincident.
17
0
11
EMPTY OFFSET REGISTER
READ ENABLE (REN)
When Read Enable is LOW and LD input is HIGH, data is loaded from the
RAM array into the output register on the rising edge of every RCLK cycle if
the device is not empty.
When the REN input is HIGH, the output register holds the previous data and
no new data is loaded into the output register. The data outputs Q0-Qn maintain
the previous data value.
Every word accessed at Qn, including the first word written to an empty
FIFO, must be requested using REN. When the last word has been read from
the FIFO, the Empty Flag (EF) will go LOW, inhibiting further read operations.
REN is ignored when the FIFO is empty. Once a write is performed, EF will
go HIGH allowing a read to occur. The EF flag is updated on the rising edge
of RCLK.
DEFAULT VALUE
001FH (72205) 003FH (72215):
007FH (72225/72235/72245)
17
11
0
FULL OFFSET REGISTER
DEFAULT VALUE
001FH (72205) 003FH (72215):
007FH (72225/72235/72245)
2766 drw 05
NOTE:
1. Any bits of the offset register not being programmed should be set to zero.
Figure 3. Offset Register Location and Default Values
6
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
EMPTY FLAG/ (EF)
When the FIFO is empty, EF will go LOW, inhibiting further read operations.
When EF is HIGH, the FIFO is not empty.
The EF is updated on the LOW-to-HIGH transition of the read clock (RCLK).
When the LD pin is LOW and WEN is HIGH, the WCLK input is disabled;
then a signal at this input can neither increment the write offset register pointer,
nor execute a write.
The contents of the offset registers can be read on the output lines when the
LD pin is set LOW and REN is set LOW; then, data can be read on the LOWto-HIGH transition of the read clock (RCLK). The act of reading the control
registers employs a dedicated read offset register pointer. (The read and write
pointers operate independently).
A read and a write should not be performed simultaneously to the offset
registers.
PROGRAMMABLE ALMOST-FULL FLAG (PAF)
The Programmable Almost-Full Flag (PAF) will go LOW when FIFO
reaches the Almost-Full condition. If no reads are performed after Reset (RS),
the PAF will go LOW after (256-m) writes for the IDT72205LB, (512-m) writes
for the IDT72215LB, (1,024-m) writes for the IDT72225LB, (2,048–m) writes
for the IDT72235LB and (4,096–m) writes for the IDT72245LB. The offset “m”
is defined in the FULL offset register.
If there is no Full offset specified, the PAF will be LOW when the device is
31 away from completely full for IDT72205LB, 63 away from completely full for
IDT72215LB, and 127 away from completely full for IDT72225LB/72235LB/
72245LB.
The PAF is asserted LOW on the LOW-to-HIGH transition of the write clock
(WCLK). PAF is reset to HIGH on the LOW-to-HIGH transition of the read clock
(RCLK). Thus PAF is asynchronous.
FIRST LOAD (FL)
FL is grounded to indicate operation in the Single Device or Width Expansion
mode. In the Depth Expansion configuration, FL is grounded to indicate it is the
first device loaded and is set to HIGH for all other devices in the Daisy Chain.
(See Operating Configurations for further details.)
WRITE EXPANSION INPUT (WXI)
This is a dual purpose pin. WXI is grounded to indicate operation in the Single
Device or Width Expansion mode. WXI is connected to Write Expansion Out
(WXO) of the previous device in the Daisy Chain Depth Expansion mode.
PROGRAMMABLE ALMOST-EMPTY FLAG (PAE)
The ProgrammableAlmost-Empty Flag(PAE) will go LOW when the read
pointer is "n+1" locations less than the write pointer. The offset "n" is defined in
the EMPTY offset register.
If there is no Empty offset specified, the Programmable Almost-Empty Flag
(PAE) will be LOW when the device is 31 away from completely empty for
IDT72205LB, 63 away from completely empty for IDT72215LB, and 127 away
from completely empty for IDT72225LB/72235LB/72245LB.
The PAE is asserted LOW on the LOW-to-HIGH transition of the read clock
(RCLK). PAE is reset to HIGH on the LOW-to-HIGH transition of the write clock
(WCLK). Thus PAE is asynchronous.
READ EXPANSION INPUT (RXI)
This is a dual purpose pin. RXI is grounded to indicate operation in the Single
Device or Width Expansion mode. RXI is connected to Read Expansion Out
(RXO) of the previous device in the Daisy Chain Depth Expansion mode.
OUTPUTS:
FULL FLAG(FF)
When the FIFO is full, FF will go LOW, inhibiting further write operations.
When FF is HIGH, the FIFO is not full. If no reads are performed after a reset,
FF will go LOW after D writes to the FIFO. D = 256 writes for the IDT72205LB,
512 for the IDT72215LB, 1,024 for the IDT72225LB, 2,048 for the IDT72235LB
and 4,096 for the IDT72245LB.
The FF is updated on the LOW-to-HIGH transition of the write clock (WCLK).
WRITE EXPANSION OUT/HALF-FULL FLAG (WXO/HF)
This is a dual-purpose output. In the Single Device and Width Expansion
mode, when Write Expansion In (WXI) and Read Expansion In (RXI) are
grounded, this output acts as an indication of a half-full memory.
TABLE 1 — STATUS FLAGS
IDT72205LB
IDT72215LB
0
0
1 to n(1)
1 to n
(1)
Number of Words in FIFO
IDT72225LB
IDT72235LB
IDT72245LB
0
0
1 to n(1)
1 to n(1)
FF PAF
HF
PAE EF
0
H
H
H
L
L
1 to n(1)
H
H
H
L
H
(n + 1) to 128
(n + 1) to 256
(n + 1) to 512
(n + 1) to 1,024
(n + 1) to 2,048
H
H
H
H
H
129 to (256-(m+1))
257 to (512-(m+1))
513 to (1,024-(m+1))
1,025 to (2,048-(m+1))
2,049 to (4,096-(m+1))
H
H
L
H
H
(512-m)(2) to 511
(1,024-m)(2) to 1,023
(2,048-m)(2) to 2,047
(4,096-m)(2) to 4,095
H
L
L
H
H
512
1,024
2,048
4,096
L
L
L
H
H
(2) to 255
(256-m)
256
NOTES:
1. n = Empty Offset (Default Values : IDT72205LB n=31, IDT72215LB n = 63, IDT72225LB/72235LB/72245LB n = 127)
2. m = Full Offset (Default Values : IDT72205LB m=31, IDT72215LB m = 63, IDT72225LB/72235LB/72245LB m = 127)
7
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
After half of the memory is filled, and at the LOW-to-HIGH transition of the next
write cycle, the Half-Full Flag goes LOW and will remain set until the difference
between the write pointer and read pointer is less than or equal to one half of
the total memory of the device. The Half-Full Flag (HF) is then reset to HIGH
by the LOW-to-HIGH transition of the Read Clock (RCLK). The HF is
asynchronous.
In the Daisy Chain Depth Expansion mode, WXI is connected to WXO of
the previous device. This output acts as a signal to the next device in the Daisy
Chain by providing a pulse when the previous device writes to the last location
of memory.
READ EXPANSION OUT (RXO)
In the Daisy Chain Depth Expansion configuration, Read Expansion In
(RXI) is connected to Read Expansion Out (RXO) of the previous device. This
output acts as a signal to the next device in the Daisy Chain by providing a pulse
when the previous device reads from the last location of memory.
DATA OUTPUTS (Q0-Q17)
Q0-Q17 are data outputs for 18-bit wide data.
t RS
t RSR
tRSS
,
,
t RSF
,
t RSF
,
,
t RSF
= 1(1)
Q0 - Q17
=0
2766 drw 06
NOTES:
1. After reset, the outputs will be LOW if OE = 0 and tri-state if OE = 1.
2. The clocks (RCLK, WCLK) can be free-running during reset.
Figure 4. Reset Timing(2)
8
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
t CLK
t CLKH
t CLKL
WCLK
t DH
t DS
D0 - D17
DATA IN VALID
t ENH
t ENS
NO OPERATION
t WFF
t WFF
t SKEW1(1)
RCLK
2766 drw 07
NOTE:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that FF will go HIGH during the current clock cycle. If the time between the rising
edge of RCLK and the rising edge of WCLK is less than tSKEW1, then FF may not change state until the next WCLK edge.
Figure 5. Write Cycle Timing
t CLK
t CLKH
t CLKL
RCLK
t ENS
t ENH
NO OPERATION
t REF
t REF
tA
Q0 - Q17
VALID DATA
t OLZ
t OHZ
t OE
t SKEW2
(1)
WCLK
2766 drw 08
NOTE:
1. tSKEW2 is the minimum time between a rising WCLK edge and a rising RCLK edge to guarantee that EF will go HIGH during the current clock cycle. If the time between the rising
edge of WCLK and the rising edge of RCLK is less than tSKEW2, then EF may not change state until the next RCLK edge.
Figure 6. Read Cycle Timing
9
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
WCLK
t DS
D0 (first valid write)
D0 - D17
D1
D2
D3
tA
tA
D4
t ENS
t FRL(1)
t SKEW2
RCLK
t REF
tENS
Q0 - Q17
D0
t OLZ
D1
t OE
2766 drw 09
NOTES:
1. When tSKEW2 minimum specification, tFRL (maximum) = tCLK + tSKEW2. When tSKEW2 < minimum specification, tFRL (maximum) = either 2*tCLK + tSKEW2 or tCLK + tSKEW2.
The Latency Timing applies only at the Empty Boundary (EF = LOW).
2. The first word is available the cycle after EF goes HIGH, always.
Figure 7. First Data Word Latency after Reset with Simultaneous Read and Write
NO WRITE
WCLK
NO WRITE
(1)
(1)
t SKEW1
t SKEW1
t DS
D0 - D17
t DS
DATA
WRITE
DATA WRITE
t WFF
t WFF
t WFF
RCLK
t ENS
t ENS
t ENH
t ENH
LOW
tA
Q0 - Q17
tA
DATA IN OUTPUT REGISTER
DATA READ
NEXT DATA READ
2766 drw 10
NOTE:
1. tSKEW1 is the minimum time between a rising RCLK edge and a rising WCLK edge to guarantee that FF will go HIGH during the current clock cycle. If the time between the rising
edge of RCLK and the rising edge of WCLK is less than tSKEW1, then FF may not change state until the next WCLK edge.
Figure 8. Full Flag Timing
10
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
WCLK
tDS
tDS
DATA WRITE 1
D0 - D17
tENS
DATA WRITE 2
tENS
tENH
tFRL
tSKEW2
tENH
(1)
tFRL
(1)
tSKEW2
RCLK
tREF
tREF
tREF
LOW
tA
Q0 - Q17
DATA READ
DATA IN OUTPUT REGISTER
2766 drw 11
NOTE:
1. When tSKEW2 minimum specification, tFRL (maximum) = tCLK + tSKEW2. When tSKEW2 < minimum specification, tFRL (maximum) = either 2*tCLK + tSKEW2 or tCLK + tSKEW2.
The Latency Timing applies only at the Empty Boundary (EF = LOW).
Figure 9. Empty Flag Timing
tCLK
tCLKH
tCLKL
WCLK
tENS
tENH
LD
tENS
WEN
tDS
tDH
PAE OFFSET
D0–D15
PAE OFFSET
D0–D11
PAF OFFSET
2766 drw 12
Figure 10. Write Programmable Registers
tCLKH
tCLK
tCLKL
RCLK
tENS
tENH
tENS
tA
Q0–Q15
UNKNOWN
PAE OFFSET
PAE OFFSET
Figure 11. Read Programmable Registers
11
PAF OFFSET
2766 drw 13
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
tCLKH
tCLKL
WCLK
tENS
tENH
tPAE
n + 1 words in FIFO
n words in FIFO
tPAE
RCLK
tENS
NOTE:
1. n = PAE offset. Number of data words written into FIFO already = n.
2766 drw 14
Figure 12. Programmable Almost-Empty Flag Timing
tCLKH
tCLKL
WCLK
(1)
tENH
tENS
tPAF
D – m words
(2)
in FIFO memory
D – m + 1 words in FIFO memory (1)
D – m + 1 words
in FIFO memory (1)
tPAF
RCLK
tENS
NOTES:
2766 drw 15
1. m = PAF offset. D = maximum FIFO Depth. Number of data words written into FIFO memory = 256 - m + 1 for the IDT72205LB, 512 - m + 1 for the IDT72215LB,
1,024 - m + 1 for the IDT72225LB, 2,048 - (m + 1) for the IDT72235LB and 4,096 - (m + 1) for the IDT72245LB.
2. 256 - m words for the IDT72205LB, 512 - m words for the IDT72215LB, 1,024 - m words for the IDT72225LB, 2,048 - m words for the IDT72235LB and 4,096 - m words for
the IDT72245LB.
Figure 13. Programmable Almost-Full Flag Timing
tCLKH
tCLKL
WCLK
tENH
tENS
tHF
D/2 + 1 words in
FIFO memory(2)
D/2 words in FIFO memory(1)
D/2 words in
FIFO memory(1)
tHF
RCLK
tENS
2766 drw 16
NOTES:
1. D = maximum FIFO Depth = 256 words for the IDT72205LB, 512 words for the IDT72215LB, 1,024 words for the IDT72225LB, 2,048 words for the IDT72235LB and 4,096 words
for the IDT72245LB.
Figure 14. Half-Full Flag Timing
12
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
t CLKH
WCLK
Note 1
t XO
t XO
t ENS
2766 drw 17
NOTE:
1. Write to Last Physical Location.
Figure 15. Write Expansion Out Timing
t CLKH
RCLK
Note 1
t XO
t XO
t ENS
2766 drw 18
NOTE:
1. Read from Last Physical Location.
Figure 16. Read Expansion Out Timing
t XI
t XIS
WCLK
2766 drw 19
Figure 17. Write Expansion In Timing
t XI
t XIS
RCLK
2766 drw 20
Figure 18. Read Expansion In Timing
13
MARCH 2013
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
OPERATING CONFIGURATIONS
SINGLE DEVICE CONFIGURATION
A single IDT72205LB/72215LB/72225LB/72235LB/72245LB may be used
when the application requirements are for 256/512/1,024/2,048/4,096 words
or less. These FIFOs are in a single Device Configuration when the First Load
(FL), Write Expansion In (WXI) and Read Expansion In (RXI) control inputs
are grounded (Figure 19).
RESET (
WRITE CLOCK (WCLK)
WRITE ENABLE (
LOAD (
READ CLOCK (RCLK)
)
READ ENABLE (
)
)
OUTPUT ENABLE (
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
DATA IN (D0 - D17)
FULL FLAG (
)
)
PROGRAMMABLE (
HALF-FULL FLAG (
)
DATA OUT (Q0 - Q17)
EMPTY FLAG (
)
)
PROGRAMMABLE (
)
)
FIRST LOAD (
2766 drw 21
)
READ EXPANSION IN (
WRITE EXPANSION IN (
)
)
Figure 19. Block Diagram of Single 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, 4,096 x 18 Synchronous FIFO
WIDTH EXPANSION CONFIGURATION
Word width may be increased simply by connecting together the control
signals of multiple devices. Status flags can be detected from any one device.
The exceptions are the Empty Flag and Full Flag. Because of variations in skew
between RCLK and WCLK, it is possible for flag assertion and deassertion to
vary by one cycle between FIFOs. To avoid problems the user must create
composite flags by ANDing the Empty Flags of every FIFO, and separately
ANDing all Full Flags. Figure 20 demonstrates a 36-word width by using two
IDT72205LB/72215LB/72225LB/72235LB/72245LBs. Any word width can
be attained by adding additional IDT72205LB/72215LB/72225LB/72235LB/
72245LBs. Please see the Application Note AN-83.
RESET (RS)
DATA IN (D) 36
18
RESET (RS)
18
READ CLOCK (RCLK)
WRITE CLOCK (WCLK)
READ ENABLE (REN)
WRITE ENABLE (WEN)
OUTPUT ENABLE (OE)
LOAD (LD)
PROGRAMMABLE (PAE)
72205LB
72215LB
72225LB
72235LB
72245LB
72205LB
72215LB
72225LB
72235LB
72245LB
HALF FULL FLAG (HF)
FF
PROGRAMMABLE (PAF)
EF
FF
EMPTY FLAG (EF)
EF
18
FULL FLAG (FF)
DATA OUT (Q)
18
FIRST LOAD (FL)
WRITE EXPANSION IN (WXI)
READ EXPANSION IN (RXI)
36
2766 drw 22
NOTE:
1. Do not connect any output control signals directly together.
Figure 20. Block Diagram of 256 x 36, 512 x 36, 1,024 x 36, 2,048 x 36, 4,096 x 36
Synchronous FIFO Memory Used in a Width Expansion Configuration
14
MARCH 2013
IDT72205LB/72215LB/72225LB/72235LB/72245LB CMOS SyncFIFOTM
256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18
DEPTH EXPANSION CONFIGURATION —
(WITH PROGRAMMABLE FLAGS)
These devices can easily be adapted to applications requiring more than 256/
512/1,024/2,048/4,096 words of buffering. Figure 21 shows Depth Expansion
using three IDT72205LB/72215LB/72225LB/72235LB/72245LBs. Maximum
depth is limited only by signal loading. Follow these steps:
1. The first device must be designated by grounding the First Load (FL)
control input.
2. All other devices must have FL in the HIGH state.
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
3. The Write Expansion Out (WXO) pin of each device must be tied to
the Write Expansion In (WXI) pin of the next device. See Figure 21.
4. The Read Expansion Out (RXO) pin of each device must be tied to the
Read Expansion In (RXI) pin of the next device. See Figure 21.
5. All Load (LD) pins are tied together.
6. The Half-Full Flag (HF) is not available in this Depth Expansion
Configuration.
7. EF, FF, PAE, and PAF are created with composite flags by ORing
together every respective flags for monitoring. The composite PAE
and PAF flags are not precise.
WCLK
RCLK
Dn
Vcc
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
Qn
WCLK
RCLK
Dn
DATA IN
Vcc
WRITE CLOCK
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
WCLK
Qn
RCLK
WRITE ENABLE
DATA OUT
READ CLOCK
READ ENABLE
RESET
OUTPUT ENABLE
Dn
LOAD
FIRST LOAD (
IDT
72205LB
72215LB
72225LB
72235LB
72245LB
Qn
)
2766 drw 23
Figure 21. Block Diagram of 768 x 18, 1,536 x 18, 3,072 x 18, 6,144 x 18, 12,288 x 18 Synchronous
FIFO Memory With Programmable Flags used in Depth Expansion Configuration
15
MARCH 2013
ORDERING INFORMATION
XXXXX
X
Device Type Power
XX
Speed
X
Package
X
X
Process /
Temperature
Range
X
BLANK
8
Tube or Tray
Tape and Reel
BLANK
I(1)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
G(2)
Green
J
PF
TF
Plastic Leaded Chip Carrier (PLCC, J68-1)
Thin Plastic Quad Flatpack (TQFP, PN64-1)
Slim Thin Plastic Quad Flatpack (STQFP, PP64-1)
10
15
25
Commercial Only
Commercial & Industrial
Commercial & Industrial
LB
Low Power
72205
72215
72225
72235
72245
256 x 18 Synchronous FIFO
512 x 18 Synchronous FIFO
1,024 x 18 Synchronous FIFO
2,048 x 18 Synchronous FIFO
4,096 x 18 Synchronous FIFO
Clock Cycle Time (tCLK)
Speed in Nanoseconds
2766 drw24
NOTES:
1. Industrial temperature range product for 15ns and 25ns speed grades are available as a standard device. All other speed grades are available by special order.
2. Green parts are available. For specific speeds and packages contact your sales office.
DATASHEET DOCUMENT HISTORY
10/02/2006
10/22/2008
03/21/2013
pgs. 1 and 16.
pg. 16.
pg. 1, 12, 16
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for SALES:
800-345-7015 or 408-284-8200
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16
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408-360-1533
email: [email protected]
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