Infineon IDW10G65C5 Thinq!â ¢ generation 5 represents infineon leading edge technology for the sic schottky barrier diodes. Datasheet

SiC
Silicon Carbide Diode
5 t h Generation thinQ! T M
650V SiC Schottky Diode
IDW10G65C5
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1
IDW10G65C5
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the
SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over
all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
Features
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Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
1
2
CASE
3
Benefits


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System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
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
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Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
650
V
VDC
QC; VR=400V
15
nC
EC; VR=400V
3.5
µJ
IF @ TC < 130°C
10
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Type / ordering Code
IDW10G65C5
Package
PG-TO247-3
Marking
D1065C5
Related links
www.infineon.com/sic
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Table of contents
Table of Contents
1
Description.......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified Forward Characteristics Model ...................................................................................... 8
7
Package outlines ................................................................................................................................ 9
8
Revision History ............................................................................................................................... 10
Final Data Sheet
3
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Continuous forward current
IF
Surge non-repetitive forward current, IF,SM
sine halfwave
Non-repetitive peak forward current
i²t value
IF,max
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
VRRM
3
∫ i²dt
dv/dt
Ptot
Tj;Tstg
Min.
–
–
–
–
–
–
–
–
–
-55
–
Values
Typ.
–
–
–
–
–
–
–
–
–
–
50
Unit
Max.
10
58
46
431
16.6
10.5
650
100
65
175
70
A
A²s
V
V/ns
W
°C
Ncm
Note/Test Condition
TC < 130°C, D=1
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
TC = 25°C, tp=10 µs
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
VR=0..480 V
TC = 25°C
M3 and M4 screws
Thermal characteristics
Table 4
Parameter
Thermal characteristics TO-247-3
Symbol
Min.
Thermal resistance, junction-case
RthJC
–
Thermal resistance, junctionRthJA
–
ambient
Soldering temperature,
Tsold
wavesoldering only allowed at leads
Final Data Sheet
–
4
Values
Typ.
1.8
Unit
Max.
2.3
–
62
–
260
Note/Test Condition
K/W
leaded
°C
1.6mm (0.063 in.) from
case for 10 s
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Electrical characteristics
4
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
DC blocking voltage
Diode forward voltage
VDC
VF
Reverse current
IR
Table 6
Parameter
Min.
650
–
–
–
–
–
Values
Typ.
–
1.5
1.8
0.5
0.1
2.0
Unit
Max.
–
1.7
2.1
180
60
1250
Min.
Values
Typ.
Max.
–
15
–
–
–
300
40
39
V
µA
Note/Test Condition
IR= 0.18 mA, Tj = 25°C
IF= 10 A, Tj=25°C
IF= 10 A, Tj=150°C
VR=650 V, Tj=25°C
VR=600 V, Tj=25°C
VR=650 V, Tj=150°C
AC characteristics
Symbol
Total capacitive charge
Qc
Total Capacitance
C
Final Data Sheet
5
Unit
nC
–
–
–
pF
Note/Test Condition
VR=400 V, di/dt=200A/µs,
IF≤IF,MAX, Tj=150°C.
VR=1 V, f=1 MHz
VR=300 V, f=1 MHz
VR=600 V, f=1 MHz
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation
Diode forward current
70
80
0.1
0.3
70
60
0.5
0.7
60
50
1
40
IF[A]
Ptot[W]
50
40
30
30
20
20
10
10
0
0
25
50
75
100
125
150
25
175
50
75
100
TC[°C]
125
150
175
TC[°C]
Ptot=f(TC); RthJC,max
IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle
Table 8
Typical forward characteristics
Typical forward characteristics in surge current
100
20
-55°C
18
90
25°C
16
80
100°C
14
70
-55°C
60
IF [A]
IF [A]
12
10
25°C
50
100°C
40
8
150°C
6
30
175°C
4
20
150°C
2
10
0
0
0
1
2
0
3
VF [V]
IF=f(VF); tp=200 µs; parameter: Tj
Final Data Sheet
175°C
1
2
3
VF [V]
4
5
6
IF=f(VF); tp=200 µs; parameter: Tj
6
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope1)
Typ. reverse current vs. reverse voltage
1.E-5
16
14
1.E-6
12
Qc [nC]
10
IR [A]
8
175°C
1.E-7
6
150°C
1.E-8
4
100°C
-55°C
2
25°C
1.E-9
100
0
100
400
700
1000
200
300
400
500
600
VR [V]
dIF/dt [A/µs]
QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max
IR=f(VR); parameter: Tj
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance
Typ. capacitance vs. reverse voltage
400
350
1
250
0.5
0.2
C [pF]
Zth,jc [K/W]
300
0.1
0.1
0.05
200
150
0.02
100
0.01
single pulse
50
0.01
1.E-06
0
1.E-03
1.E+00
0
Zth,jc=f(tP); parameter: D=tP/T
Final Data Sheet
1
10
100
1000
VR [V]
tp [s]
C=f(VR); Tj=25°C; f=1 MHz
7
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDH02G65C5
Electrical characteristics diagrams
Table 11
Typ. capacitance stored energy
10
9
8
7
EC [µJ]
6
5
4
3
2
1
0
0
200
400
VR [V]
600
EC=f(VR)
6
Simplified Forward Characteristics Model
Table 12
Equivalent forward current curve
Mathematical Equation
V F  VTH  RDIFF  I F
VTH T j   0.001  T j  1.04 V 
RDIFF T j   1.29  10 -6  T j  1.29  10 -4  T j  0.047 
IF [A]
2
1/R
V
diff
th
VF [V]
VF=f(IF)
Final Data Sheet
Tj in °C; -55°C < Tj < 175°C; IF < 20 A
8
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Package outlines
7
Figure 1
Package outlines
Outlines TO-247, dimensions in mm/inches
Final Data Sheet
9
Rev. 2.2, 2013-01-15
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Revision History
8
Revision History
5th Generation thinQ!TM SiC Schottky Diode
Revision History: 2013-01-15, Rev. 2.2
Previous Revision:
Revision
Subjects (major changes since last version)
2.0
Release of the final datasheet.
2.1
Reverse current values, maximum diode forward voltage.
2.2
Reverse current values, tested avalanche current, simplified calculation model
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Edition 2013-01-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
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Final Data Sheet
10
Rev. 2.2, 2013-01-15
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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